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    Datasheet PDF

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    Mário João Vicente
    This document provides specifications for the 2N3055 transistor, including: - It is an NPN silicon transistor in a TO-3 metal case for power switching, regulation, and amplification applications. - Absolute maximum ratings for voltage, current, power dissipation, and temperature. - Thermal and electrical characteristics like gain, voltage, and current ratings. - Mechanical dimensions for the TO-3 package.

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    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Datasheet PDF

    Uploaded by

    Mário João Vicente
    27 views2 pages
    This document provides specifications for the 2N3055 transistor, including: - It is an NPN silicon transistor in a TO-3 metal case for power switching, regulation, and amplification applications. - Absolute maximum ratings for voltage, current, power dissipation, and temperature. - Thermal and electrical characteristics like gain, voltage, and current ratings. - Mechanical dimensions for the TO-3 package.

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    This document provides specifications for the 2N3055 transistor, including: - It is an NPN silicon transistor in a TO-3 metal case for power switching, regulation, and amplification applications. - Absolute maximum ratings for voltage, current, power dissipation, and temperature. - Thermal and electrical characteristics like gain, voltage, and current ratings. - Mechanical dimensions for the TO-3 package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    27 views2 pages

    Datasheet PDF

    Uploaded by

    Mário João Vicente
    This document provides specifications for the 2N3055 transistor, including: - It is an NPN silicon transistor in a TO-3 metal case for power switching, regulation, and amplification applications. - Absolute maximum ratings for voltage, current, power dissipation, and temperature. - Thermal and electrical characteristics like gain, voltage, and current ratings. - Mechanical dimensions for the TO-3 package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    2N3055

    POWER LINEAR AND SWITCHING


    APPLICATIONS

    The 2N3055 is a silicon epitaxial-base NPN transistor in JEDEC TO-3 metal case.
    It is intended for power switching circuits, series and shunt regulators, output stages
    and high fidelity amplifiers.

    ABSOLUTE MAXIMUM RATINGS

    Symbol Ratings Value Unit


    VCBO Collector to Base Voltage 100 V
    VCEO #Collector-Emitter Voltage 60 V
    VCER Collector-Emitter Voltage 70 V
    VEBO Emitter-Base Voltage 7 V
    IC Collector Current – Continuous 15 Adc
    IB Base Current – Continuous 7 Adc
    @ TC = 25° 115 Watts
    PD Total Device Dissipation
    Derate above 25° 0.657 W/°C
    TJ Junction Temperature 200 °C
    -65 to
    TS Storage Temperature °C
    +200

    THERMAL CHARACTERISTICS

    Symbol Ratings Value Unit


    RthJC Thermal Resistance, Junction to Case 1.52 °C/W

    COMSET SEMICONDUCTORS 1/2


    2N3055

    ELECTRICAL CHARACTERISTICS
    TC=25°C unless otherwise noted

    Symbol Ratings Test Condition(s) Min Typ Mx Unit


    Collector-Emitter Sustaining
    VCEO(SUS) Voltage (1)
    IC=200 mAdc, IB=0 60 - - Vdc
    Collector-Emitter
    BVCER Breakdown Voltage (1)
    IC=200 mAdc, RBE=100Ω 70 - - Vdc

    ICEO Collector-Emitter Current CVE=30 Vdc, IB=0 - - 0.7 mAdc


    VCE=100 Vdc, VEB(off)=1.5 Vdc - - 5.0
    ICEX Collector Cutoff Current VCE=100 Vdc, VEB(off)=1.5 Vdc, mAdc
    30
    TC=150°C
    IEBO Emitter Cutoff Current VBE=7.0 Vdc, IC=0 - - 5.0 mAdc
    IC=4.0 Adc, VCE=4.0 Vdc 20 - 70
    hFE DC Current Gain
    IC=10 Adc, VCE=4.0 Vdc 5.0 - -
    Collector-Emitter saturation IC=4.0 Adc, IB=0.4Adc - - 1.1
    VCE(SAT) Voltage
    Vdc
    IC=10 Adc, IB=3.3Adc 8.0
    VBE Base-Emitter Voltage IC=4.0 Adc, VCE=4.0 Vdc - 1.8 - Vdc

    hfe Small Signal Current Gain VCE=4.0 Vdc, IC=1.0 Adc, f=1.0 kHz 15 - 120 -
    Small Signal Current Gain
    fαe Cutoff Frequency
    VCE=4.0 Vdc, IC+=1.0 Adc, f=1.0 kHz 10 - - kHz
    Second Breakdown
    Is/b Collector Current
    t=1 S (non repetitive), VCE=60 Vdc 1.95 - - A
    In accordance with JEDEC Registration Data
    (1) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%

    MECHANICAL CHARACTERISTICS CASE-TO-3

    DIMENSIONS
    mm inches
    A 25,51 1,004
    B 38,93 1,53
    C 30,12 1,18
    D 17,25 0,68
    E 10,89 0,43
    G 11,62 0,46
    H 8,54 0,34
    L 1,55 0,6
    M 19,47 0,77
    N 1 0,04
    P 4,06 0,16

    Pin 1 : Base
    Pin 2 : Emitter
    Case : Collector

    Information furnished is believed to be accurate and reliable. However, CS assumes no responsability


    for the consequences of use of such information nor for errors that could appear.
    Data are subject to change without notice.

    COMSET SEMICONDUCTORS 2/2

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