Q2N2222 okDatasheet.

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Amplifier Transistors
NPN Silicon
MAXIMUM RATINGS
Rating Symbol Value Unit
1
Collector–Emitter Voltage VCEO 40 Vdc 2
3
Collector–Base Voltage VCBO 75 Vdc
Emitter–Base Voltage VEBO 6.0 Vdc CASE 29–11, STYLE 17
TO–92 (TO–226AA)
Collector Current — Continuous IC 600 mAdc
Total Device Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C 12 mW/°C
COLLECTOR
Operating and Storage Junction TJ, Tstg –55 to +150 °C 1
Temperature Range

THERMAL CHARACTERISTICS 2
BASE
Characteristic Symbol Max Unit
Thermal Resistance, Junction to Ambient RJA 200 °C/W
3
Thermal Resistance, Junction to Case RJC 83.3 °C/W EMITTER

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
www.DataSheet4U.com V(BR)CEO 40 — Vdc
(IC = 10 mAdc, IB = 0)
Collector–Base Breakdown Voltage V(BR)CBO 75 — Vdc
(IC = 10
Adc, IE = 0)
Emitter–Base Breakdown Voltage V(BR)EBO 6.0 — Vdc
(IE = 10
Adc, IC = 0)
Collector Cutoff Current ICEX — 10 nAdc
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)
Collector Cutoff Current ICBO µAdc
(VCB = 60 Vdc, IE = 0) — 0.01
(VCB = 60 Vdc, IE = 0, TA = 150°C) — 10
Emitter Cutoff Current IEBO — 10 nAdc
(VEB = 3.0 Vdc, IC = 0)
Collector Cutoff Current ICEO — 10 nAdc
(VCE = 10 V)
Base Cutoff Current IBEX — 20 nAdc
(VCE = 60 Vdc, VEB(off) = 3.0 Vdc)

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit

ON CHARACTERISTICS
DC Current Gain hFE —
(IC = 0.1 mAdc, VCE = 10 Vdc) 35 —
(IC = 1.0 mAdc, VCE = 10 Vdc) 50 —
(IC = 10 mAdc, VCE = 10 Vdc) 75 —
(IC = 10 mAdc, VCE = 10 Vdc, TA = –55°C) 35 —
(IC = 150 mAdc, VCE = 10 Vdc)(1) 100 300
(IC = 150 mAdc, VCE = 1.0 Vdc)(1) 50 —
(IC = 500 mAdc, VCE = 10 Vdc)(1) 40 —
Collector–Emitter Saturation Voltage(1) VCE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) — 0.3
(IC = 500 mAdc, IB = 50 mAdc) — 1.0
Base–Emitter Saturation Voltage(1) VBE(sat) Vdc
(IC = 150 mAdc, IB = 15 mAdc) 0.6 1.2
(IC = 500 mAdc, IB = 50 mAdc) — 2.0

SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product(2) fT 300 — MHz
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance Cobo — 8.0 pF
(VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance Cibo — 25 pF
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance hie kΩ
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 2.0 8.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 0.25 1.25
Voltage Feedback Ratio hre X 10–4
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) — 8.0
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) — 4.0
Small–Signal Current Gain hfe —
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 50 300
(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 75 375
Output Admittance hoe
mhos
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 5.0 35
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(IC = 10 mAdc, VCE = 10 Vdc, f = 1.0 kHz) 25 200
Collector Base Time Constant rb′Cc — 150 ps
(IE = 20 mAdc, VCB = 20 Vdc, f = 31.8 MHz)
Noise Figure NF — 4.0 dB
(IC = 100
Adc, VCE = 10 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)

SWITCHING CHARACTERISTICS
Delay Time (VCC = 30 Vdc, VBE(off) = –2.0
2.0 Vdc, td — 10 ns
Rise Time IC = 150 mAdc, IB1 = 15 mAdc) (Figure 1) tr — 25 ns
Storage Time (VCC = 30 Vdc, IC = 150 mAdc, ts — 225 ns
IB1 = IB2 = 15 mAdc)
Ad ) (Fi
(Figure 2)
Fall Time tf — 60 ns

1. Pulse Test: Pulse Width
300
s, Duty Cycle
2.0%.

2. fT is defined as the frequency at which |hfe| extrapolates to unity.

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 Q2N2222

SWITCHING TIME EQUIVALENT TEST CIRCUITS

+
30 V +
30 V
1.0 to 100 µs, 1.0 to 100 µs, 200
200 +16 V
+16 V DUTY CYCLE ≈ 2.0% DUTY CYCLE ≈ 2.0%

0 0
1 kΩ -14 V 1k CS* < 10 pF
-
2 V CS* < 10 pF
< 2 ns < 20 ns
1N914

Scope rise time < 4 ns -
4 V

*Total shunt capacitance of test jig,
connectors, and oscilloscope.
Figure 1. Turn–On Time Figure 2. Turn–Off Time

1000
700
500 TJ = 125°C

300
hFE , DC CURRENT GAIN

200
25°C
100
70
-55°C
50
30 VCE = 1.0 V
20 VCE = 10 V

10
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0 k
IC, COLLECTOR CURRENT (mA)

Figure 3. DC Current Gain

VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)

1.0
www.DataSheet4U.com TJ = 25°C
0.8

0.6 IC = 1.0 mA 10 mA 150 mA 500 mA

0.4

0.2

0
0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50
IB, BASE CURRENT (mA)

Figure 4. Collector Saturation Region

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 Q2N2222

200 500
IC/IB = 10 VCC = 30 V
300 IC/IB = 10
100 TJ = 25°C
200 t′s = ts - 1/8 tf IB1 = IB2
70 tr @ VCC = 30 V
50 TJ = 25°C
td @ VEB(off) = 2.0 V
100
30 td @ VEB(off) = 0
t, TIME (ns)

t, TIME (ns)
70
20 tf
50
30
10
7.0 20
5.0
10
3.0 7.0
2.0 5.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 5. Turn–On Time Figure 6. Turn–Off Time

10 10
RS = OPTIMUM f = 1.0 kHz
IC = 1.0 mA, RS = 150 Ω RS = SOURCE
8.0 RS = RESISTANCE 8.0
500 µA, RS = 200 Ω IC = 50 µA
NF, NOISE FIGURE (dB)

100 µA, RS = 2.0 kΩ NF, NOISE FIGURE (dB) 100 µA

6.0 50 µA, RS = 4.0 kΩ 6.0 500 µA
1.0 mA

4.0 4.0

2.0 2.0

0 0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (OHMS)

Figure 7. Frequency Effects Figure 8. Source Resistance Effects

f T, CURRENT-GAIN BANDWIDTH PRODUCT (MHz)

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30 500
VCE = 20 V
20 TJ = 25°C
300
Ceb
CAPACITANCE (pF)

10 200

7.0

5.0
100
Ccb
3.0 70

2.0 50
0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)

Figure 9. Capacitances Figure 10. Current–Gain Bandwidth Product

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 Q2N2222

1.0 +0.5
TJ = 25°C

0.8 0 RVC for VCE(sat)

COEFFICIENT (mV/ °C)

VBE(sat) @ IC/IB = 10
V, VOLTAGE (VOLTS)

1.0 V -
0.5
0.6
VBE(on) @ VCE = 10 V -
1.0
0.4
-
1.5

0.2
-
2.0 RVB for VBE
VCE(sat) @ IC/IB = 10
0 -
2.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)

Figure 11. “On” Voltages Figure 12. Temperature Coefficients

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 Q2N2222

PACKAGE DIMENSIONS

TO–92 (TO–226)
CASE 29–11
ISSUE AL

NOTES:
A B 1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
P BEYOND DIMENSION K MINIMUM.
L
SEATING INCHES MILLIMETERS
PLANE K DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
D 0.016 0.021 0.407 0.533
X X D G 0.045 0.055 1.15 1.39
G H 0.095 0.105 2.42 2.66
J 0.015 0.020 0.39 0.50
H J K 0.500 --- 12.70 ---
L 0.250 --- 6.35 ---
V C N 0.080 0.105 2.04 2.66
P --- 0.100 --- 2.54
SECTION X–X R 0.115 --- 2.93 ---
1 N V 0.135 --- 3.43 ---
N

STYLE 17:
PIN 1. COLLECTOR
2. BASE
3. EMITTER

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