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    Technical Data: PNP Silicon Low Power Transistor

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    Lanang Kelana
    This document provides technical data for the PNP silicon low power transistor models 2N2604 and 2N2605, including maximum ratings, thermal characteristics, and electrical characteristics. The transistors are qualified per military specifications and are designed for low power applications with a maximum collector current of 30 mA. Key specifications include a collector-base voltage rating of 80V for the 2N2604 and 70V for the 2N2605, as well as forward current transfer ratios ranging from 40 to 450 depending on current and frequency.

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    Technical Data: PNP Silicon Low Power Transistor

    Uploaded by

    Lanang Kelana
    12 views3 pages
    This document provides technical data for the PNP silicon low power transistor models 2N2604 and 2N2605, including maximum ratings, thermal characteristics, and electrical characteristics. The transistors are qualified per military specifications and are designed for low power applications with a maximum collector current of 30 mA. Key specifications include a collector-base voltage rating of 80V for the 2N2604 and 70V for the 2N2605, as well as forward current transfer ratios ranging from 40 to 450 depending on current and frequency.

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    This document provides technical data for the PNP silicon low power transistor models 2N2604 and 2N2605, including maximum ratings, thermal characteristics, and electrical characteristics. The transistors are qualified per military specifications and are designed for low power applications with a maximum collector current of 30 mA. Key specifications include a collector-base voltage rating of 80V for the 2N2604 and 70V for the 2N2605, as well as forward current transfer ratios ranging from 40 to 450 depending on current and frequency.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    12 views3 pages

    Technical Data: PNP Silicon Low Power Transistor

    Uploaded by

    Lanang Kelana
    This document provides technical data for the PNP silicon low power transistor models 2N2604 and 2N2605, including maximum ratings, thermal characteristics, and electrical characteristics. The transistors are qualified per military specifications and are designed for low power applications with a maximum collector current of 30 mA. Key specifications include a collector-base voltage rating of 80V for the 2N2604 and 70V for the 2N2605, as well as forward current transfer ratios ranging from 40 to 450 depending on current and frequency.

    Copyright:

    © All Rights Reserved
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    Download as pdf or txt
    of 3

    TECHNICAL DATA

    PNP SILICON LOW POWER TRANSISTOR


    Qualified per MIL-PRF-19500/354

    Devices Qualified Level

    JAN, JANTX
    2N2604 2N2605
    JANTXV

    MAXIMUM RATINGS
    Ratings Symbol 2N2604 2N2605 Units
    Collector-Base Voltage VCBO 80 70 Vdc
    Collector-Emitter Voltage VCEO 60 Vdc
    Emitter-Base Voltage VEBO 6.0 Vdc
    Collector Current IC 30 mAdc
    Total Power Dissipation @ TA = +250C(1) PT 400 mW/0C
    0
    Operating & Storage Junction Temperature Range TJ, Tstg -65 to +200 C
    THERMAL CHARACTERISTICS
    Characteristics Symbol Max. Unit
    0 TO-46*
    Thermal Resistance, Junction-to-Case RθJC 0.437 C/mW (TO-206AB)
    1) Derate linearly 2.28 mW/0C above TA = +250C
    *See appendix A for
    package outline
    ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
    Characteristics Symbol Min. Max. Unit
    OFF CHARACTERISTICS
    Collector-Base Breakdown Voltage
    IC = 10 µAdc 2N2604 V(BR)CBO 80 Vdc
    2N2605 70
    Collector-Emitter Breakdown Voltage
    V(BR)CEO 60 Vdc
    IC = 10 mAdc
    Emitter-Base Breakdown Current
    V(BR)EBO 6.0 Vdc
    IE = 10 µAdc
    Collector-Base Cutoff Current
    ICBO ηAdc
    VCB = 50 Vdc 10
    Emitter-Base Cutoff Current
    IEBO 2.0 ηAdc
    VEB = 5.0 Vdc
    Collector-Emitter Cutoff Current
    ICES 10 ηAdc
    VCE = 50 Vdc

    6 Lake Street, Lawrence, MA 01841 120101


    1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 1 of 2
    2N2604, 2N2605 JAN SERIES

    ELECTRICAL CHARACTERISTICS (con’t)


    Characteristics Symbol Min. Max. Unit
    ON CHARACTERISTICS (2)
    Forward-Current Transfer Ratio
    IC = 10 µAdc, VCE = 5.0 Vdc 2N2604 40 120
    2N2605 100 300
    IC = 500 µAdc, VCE = 5.0 Vdc 2N2604 hFE 60 180
    2N2605 150 450
    IC = 10 mAdc, VCE = 5.0 Vdc 2N2604 40 160
    2N2605 100 400
    Collector-Emitter Saturation Voltage
    VCE(sat) 0.3 Vdc
    IC = 10 mAdc, IB = 500 µAdc
    Base-Emitter Saturation Voltage
    VBE(sat) 0.7 0.9 Vdc
    IC = 10 mAdc, IB = 500 µAdc
    DYNAMIC CHARACTERISTICS
    Small-Signal Short-Circuit Input Impedance
    kΩ
    IC = 1.0 mAdc, VCB = 5.0 Vdc, f = 1.0 kHz 2N2604 hie 1.0 10
    2N2605 2.0 20
    Small-Signal Open-Circuit Output Admittance
    µmhos
    IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz 2N2604 hoe 40
    2N2605 60
    Small-Signal Short-Circuit Forward Current Transfer Ratio
    IC = 1.0 mAdc, VCE = 5.0 Vdc, f= 1.0 kHz 2N2604 hfe 60 180
    2N2605 150 450
    Magnitude of Small-Signal Forward Current Transfer Ratio
    hfe 1.0 8.0
    IC = 0.5 mAdc, VCE = 5.0 Vdc, f = 30 MHz
    Output Capacitance
    Cobo 6.0 pF
    VCB = 5.0 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz
    Noise Figure
    VCE = 5.0 Vdc, IC = 10 µAdc, Rg = 10 kΩ, f = 100 Hz F1 5.0 dB
    VCE = 5.0 Vdc, IC = 10 µAdc, Rg = 10 kΩ, f = 1.0 kHz F2 3.0
    VCE = 5.0 Vdc, IC = 10 µAdc, Rg = 10 kΩ, f = 10 kHz F3 3.0
    (2) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.

    6 Lake Street, Lawrence, MA 01841 120101


    1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 Page 2 of 2

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