Lab 4 Diode Characteristics BBN 10205 (Done)

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UNIVERSITI TUN HUSSEIN ONN MALAYSIA

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ACTIVITY
NAMA PROGRAM DAN BBN10205-PRODUCT DEVELOPMENT
NAMA KURSUS/
PROGRAM’S CODE & TECHNOLOGY
NAME
NO. DAN TAJUK UNIT
KOMPETENSI /
COMPETENCY UNIT NO.
AND TITLE
NO. DAN PENYATAAN

AKTIVITI KERJA / WORK
ACTIVITIES NO. AND
STATEMENT
LAB 4: DIODE CHARACTERISTICS
i. To study the characteristics of a typical pn-junction diode.

OBJEKTIF/
OBJECTIVES ii. To construct the I-V curve of a typical pn-junction diode.
AHLI KUMPULAN/ 1. MAS ZHAMIR ZHAKWAN BIN ABDUL AZID

GROUP MEMBERS (CB200066)
ITEM MARKS
1. Attendance/Discipline / 10
UNTUK KEGUNAAN 2. Participation / 10

PENGAJAR SAHAJA/
3. Results / 50
FOR INSTRUCTORS
ONLY
4. Discussion / 20
5. Conclusion / 10
TOTAL MARKS / 100

TITTLE : DIODE CHARACTERISTICS
OBJECTIVE (i) To study the characteristics of a typical pn-junction diode.

(ii) To construct the I-V curve of a typical pn-junction diode.
EQUIPMENT (i) Digital multimeter (DMM) and/or VOM

Variable Resistors: 10k Ω
Resistor : 1 k Ω
Diode : 4007
BACKGROUND If p-type and n-type semiconductors are joined together at a

junction, a pn-junction diode is formed. The holes and electrons
combine, but only for a narrow region right at the junction. The
reason for the narrow region of recombination is that the p type
becomes negatively charged as holes move into the n type, and
the n type becomes positively charged as electrons move into the
p type. The narrow region is called the "depletion region" or the
"space-charge region" because it contains no mobile carriers.
If a DC voltage is applied across the pn-junction diode, the p type

is made positive with respect to the n type, as shown in Fig. 1(a).
In effect, then, the holes of the p type and the electrons of the n
type are forced closer together. Therefore, the probability of
majority carriers passing across the depletion region or the
barrier is increased and a forward current IF is obtained. This
arrangement is called a forward bias.
In Fig. 1(b), the diode is now reverse-biased, the potential barrier

at the junction is increased and the width of the depletion region
is increased. The effect is to reduce the probability of majority
carriers crossing the barrier. The reverse current IR, due to
minority carriers, is very small.
PROCEDURE 1. Construct circuit according to figure 1 on the breadboard. Let R1

= 1kΩ and variable resistor = 10kΩ.
2. Set the positive power supply to +10V and apply to V+ terminal.
2
1 R1
2
3
10V
D1
Figure 1
3 Using the voltmeter, measure and record the voltage at VR1. EVR1
= _____10V______.
The VR1 is used for adjusting the voltage applied to the diode D1
and the R1 is a current-limit resistor for protecting the diode D1.
4. Turn VR1 and measure the voltage across R1 to obtain a 0.1V.

This will obtain a forward current If= 0.1 mA (0.1V/R1=
0.1V/1K) through the D1.
When If reaches 0.1 mA, measure the voltage across D1 and

record it as Vf in Table 1. Complete other measurements of Vf
values in Table 1 by adjusting VR1 for the values of If shown.
5 Plot the recorded values of If and Vf of Table 1 on the graph

given. Then draw a smooth curve through these plotted points.
Results :
Table 1
Reverse bias
Forward bias
IF (ma) VF (V) IF (ma) VR (V)
0.1 0.40 0.1 -0.40
0.2 0.43 0.2 -0.42
0.3 0.46 0.3 -0.44
0.4 0.49 0.4 -0.46
0.5 0.52 0.5 -0.48
0.6 0.54 0.6 -0.49
3
0.7 0.56 0.7 -0.51
0.8 0.58 0.8 0.53
0.9 0.59 0.9 0.54
1.0 0.59 1.0 -0.54
2.0 0.61 2.0 -0.56
3.0 0.63 3.0 -0.58
4.0 0.64 4.0 -0.59
5.0 0.66 5.0 -0.62
DISCUSSION:
1. Explain the characteristics of the diode given.
 Allows only current through single direction (referred to as forward bias) and reverse
backward (referred to as reverse bias).
2. From the plotted graph, identify the knee voltage for diode in the experiment. Identify
type of diode.
4
CONCLUSION:
Depending on the voltage applied across it, a diode will operate in one of three regions:
 Forward bias: When the voltage across the diode is positive the diode is "on" and
current can run through. The voltage should be greater than the forward voltage (VF)
in order for the current to be anything significant.
 Reverse bias: This is the "off" mode of the diode, where the voltage is less than VF
but greater than -VBR. In this mode current flow is (mostly) blocked, and the diode is
off. A very small amount of current (on the order of nA) -- called reverse saturation
current -- is able to flow in reverse through the diode.
Breakdown: When the voltage applied across the diode is very large and negative, lots of
current will be able to flow in the reverse direction, from cathode to anode.

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FAKULTI PENDIDIKAN TEKNIKAL DAN VOKASIONAL

UNIVERSITI TUN HUSSEIN ONN MALAYSIA

AKTIVITI/ KERTAS KERJA /WORK SHEET

NO. DAN PENYATAAN

i. To study the characteristics of a typical pn-junction diode.

AHLI KUMPULAN/ 1. MAS ZHAMIR ZHAKWAN BIN ABDUL AZID

UNTUK KEGUNAAN 2. Participation / 10

TOTAL MARKS / 100

OBJECTIVE (i) To study the characteristics of a typical pn-junction diode.

EQUIPMENT (i) Digital multimeter (DMM) and/or VOM

BACKGROUND If p-type and n-type semiconductors are joined together at a

If a DC voltage is applied across the pn-junction diode, the p type

In Fig. 1(b), the diode is now reverse-biased, the potential barrier

PROCEDURE 1. Construct circuit according to figure 1 on the breadboard. Let R1

2. Set the positive power supply to +10V and apply to V+ terminal.

4. Turn VR1 and measure the voltage across R1 to obtain a 0.1V.

When If reaches 0.1 mA, measure the voltage across D1 and

5 Plot the recorded values of If and Vf of Table 1 on the graph

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