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Silicon Controlled Rectifiers: High-Reliability Discrete Products and Engineering Services Since 1977

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2N6394-2N6399

High-reliability discrete products SILICON CONTROLLED RECTIFIERS


and engineering services since 1977

FEATURES
• Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
• Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.

MAXIMUM RATINGS
Rating Symbol Value Unit
Peak repetitive forward and reverse blocking voltage(1)
(TJ = -40 to +125°C, sine wave, 50 to 60 Hz, gate open)
2N6394 50
2N6395 100
VRRM, VDRM Volts
2N6396 200
2N6397 400
2N6398 600
2N6399 800
On state RMS current
IT(RMS) Amps
(180° conduction angles, TC = 90°C) 12
Peak non-repetitive surge current
ITSM Amps
(1/2 cycle, 60Hz, sine wave, TJ = 90°C) 100
Circuit fusing considerations (t = 8.3ms) I2t 40 A2s
Forward peak gate power (pulse width ≤ 1.0µs, TC = 90ۜ°C) PGM 20 Watts
Forward average gate power (t = 8.3ms, TC = 90°C) PG(AV) 0.5 Watts
Forward peak gate current (pulse width ≤ 1.0µs, TC = 90ۜ°C) IGM 2 Amps
Operating junction temperature range TJ -40 to +125 °C
Storage temperature range Tstg -40 to +150 °C
Note 1: VDRM and VRRM for all types can be applied on a continuous basis without incurring damage. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied
concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.

THERMAL CHARACTERISTICS
Characteristic Symbol Maximum Unit

Thermal resistance, junction to case RӨJC 2.0 °C/W

Maximum lead temperature for soldering purposes 1/8” from case for 10 seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C)


Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(VAK = Rated VDRM or VRRM, gate open)
IDRM or IRRM
TJ = 25°C - - 10 µA
TJ = 100°C - - 2.0 mA
ON CHARACTERISTICS
Peak forward on-state voltage (2)
VTM Volts
(ITM = 24A peak) - 1.7 2.2
Gate trigger current (continuous dc)
IGT mA
(VD = 12 Vdc, RL = 100 Ω) - 5.0 30

Rev. 20180102
2N6394-2N6399
High-reliability discrete products SILICON CONTROLLED RECTIFIERS
and engineering services since 1977

ELECTRICAL CHARACTERISTICS (TC = 25°C)


Characteristic Symbol Min. Typ. Max. Unit
OFF CHARACTERISTICS
Gate trigger voltage (continuous dc)
VGT Volts
(VD = 12 Vdc, RL = 100 Ω) - 0.7 1.5
Gate non-trigger voltage
VGD Volts
(VD = 12 Vdc, RL = 100 Ω, TJ = 125°C) 0.2 - -
Holding current
IH mA
(VD = 12Vdc, initiating current = 200mA, gate open) - 6.0 50
Turn on time
tgt µs
(ITM = 12A, IGT = 40mAdc, VD = rated VDRM) - 1.0 2.0
Turn-off time (VD = rated VDRM) tq µs
(ITM = 12A, IR = 12A) - 15 -
(ITM = 12A, IR = 12A, TJ = 125°C) - 35 -
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage exponential dv/dt V/µs
(VD = rated VDRM, TJ = 125°C) - 50 -
Note 2: Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.

MECHANICAL CHARACTERISTICS
Case: TO-220AB
Marking: Body painted, alpha-numeric
Pin out: See below

Rev. 20180102
2N6394-2N6399
High-reliability discrete products SILICON CONTROLLED RECTIFIERS
and engineering services since 1977

Rev. 20180102
2N6394-2N6399
High-reliability discrete products SILICON CONTROLLED RECTIFIERS
and engineering services since 1977

Rev. 20180102
2N6394-2N6399
High-reliability discrete products SILICON CONTROLLED RECTIFIERS
and engineering services since 1977

Rev. 20180102
2N6394-2N6399
High-reliability discrete products SILICON CONTROLLED RECTIFIERS
and engineering services since 1977

Rev. 20180102

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