2N6344A, 2N6348A,

2N6349A
Preferred Device

Triacs
Silicon Bidirectional Thyristors
Designed primarily for full-wave ac control applications, such as
light dimmers, motor controls, heating controls and power supplies; or
wherever full-wave silicon gate controlled solid-state devices are http://onsemi.com
needed. Triac type thyristors switch from a blocking to a conducting
state for either polarity of applied anode voltage with positive or TRIACS
negative gate triggering.
• Blocking Voltage to 800 Volts 12 AMPERES RMS
• All Diffused and Glass Passivated Junctions for Greater Parameter 600 thru 800 VOLTS
Uniformity and Stability
• Small, Rugged, Thermowatt Construction for Low Thermal
Resistance, High Heat Dissipation and Durability MT2 MT1
• Gate Triggering Guaranteed in all Four Quadrants G
• For 400 Hz Operation, Consult Factory
• 8 Ampere Devices Available as 2N6344 thru 2N6349
• Device Marking: Logo, Device Type, e.g., 2N6344A, Date Code
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MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Symbol Value Unit
*Peak Repetitive Off–State Voltage(1) VDRM, Volts
(Gate Open, TJ = –40 to +110°C, VRRM
Sine Wave 50 to 60 Hz, Gate Open)
2N6344A, 2N6348A 600 1
2N6349A 800 2
3
*On–State RMS Current IT(RMS) A
(Full Cycle Sine Wave 50 to 60 Hz) TO–220AB
(TC = +80°C) 12 CASE 221A
(TC = +95°C) 6.0 STYLE 4

*Peak Non–repetitive Surge Current ITSM 100 A

(One Full Cycle, 60 Hz, TC = +80°C) PIN ASSIGNMENT
Preceded and followed by rated current 1 Main Terminal 1
Circuit Fusing Consideration (t = 8.3 ms) I2t 59 A2s 2 Main Terminal 2
*Peak Gate Power (TC = +80°C, PGM 20 Watts 3 Gate
Pulse Width = 2.0 µs)
4 Main Terminal 2
*Average Gate Power PG(AV) 0.5 Watt
(TC = +80°C, t = 8.3 ms)

*Peak Gate Current IGM 2.0 A

ORDERING INFORMATION
(Pulse Width = 2.0 µs; TC = +80°C)
Device Package Shipping
*Peak Gate Voltage VGM "10 Volts
2N6344A TO220AB 500/Box
(Pulse Width = 2.0 µs; TC = +80°C)
*Operating Junction Temperature Range TJ – 40 to °C 2N6348A TO220AB 500/Box
+125
2N6349A TO220AB 500/Box
*Storage Temperature Range Tstg – 40 to °C
+150
Preferred devices are recommended choices for future use
*Indicates JEDEC Registered Data. and best overall value.
(1) VDRM and VRRM for all types can be applied on a continuous basis. Blocking
voltages shall not be tested with a constant current source such that the
voltage ratings of the devices are exceeded.

 Semiconductor Components Industries, LLC, 1999 1 Publication Order Number:

February, 2000 – Rev. 1 2N6344A/D
 2N6344A, 2N6348A, 2N6349A

THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
*Thermal Resistance, Junction to Case RθJC 2.0 °C/W
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds TL 260 °C

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted; Electricals apply in either direction)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
*Peak Repetitive Blocking Current IDRM,
(VD = Rated VDRM, VRRM; Gate Open) TJ = 25°C IRRM — — 10 µA
TJ = 110°C — — 2.0 mA
ON CHARACTERISTICS
*Peak On-State Voltage VTM — 1.3 1.75 Volts
"
(ITM = 17 A Peak; Pulse Width = 1 to 2 ms, Duty Cycle p 2%)
Gate Trigger Current (Continuous dc) IGT mA
(VD = 12 Vdc, RL = 100 Ohms)
MT2(+), G(+) — 6.0 50
MT2(+), G(–) — 6.0 75
MT2(–), G(–) — 10 50
MT2(–), G(+) — 25 75
*MT2(+), G(+); MT2(–), G(–) TC = –40°C — — 100
*MT2(+), G(–); MT2(–), G(+) TC = –40°C — — 125
Gate Trigger Voltage (Continuous dc) VGT Volts
(VD = 12 Vdc, RL = 100 ohms)
MT2(+), G(+) — 0.9 2.0
MT2(+), G(–) — 0.9 2.5
MT2(–), G(–) — 1.1 2.0
MT2(–), G(+) — 1.4 2.5
*MT2(+), G(+); MT2(–), G(–) TC = –40°C — — 2.5
*MT2(+), G(–); MT2(–), G(+) TC = –40°C — — 3.0
Gate Non–Trigger Voltage VGD Volts
(VD = Rated VDRM, RL = 10 k ohms, TJ = 110°C)
*MT2(+), G(+); MT2(–), G(–); MT2(+), G(–); MT2(–), G(+) 0.2 — —
Holding Current IH mA
(VD = 12 Vdc, Gate Open) TC = 25°C — 6.0 40
"
Initiating Current = 200 mA *TC = –40°C — — 75
*Turn-On Time tgt — 1.5 2.0 µs
(VD = Rated VDRM, ITM = 17 A, IGT = 120 mA,
Rise Time = 0.1 µs, Pulse Width = 2 µs)

DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Commutation Voltage dv/dt(c) — 5.0 — V/µs
(VD = Rated VDRM, ITM = 17 A, Commutating di/dt = 6.1 A/ms,
Gate Unenergized, TC = 80°C)
*Indicates JEDEC Registered Data.

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 2N6344A, 2N6348A, 2N6349A

Voltage Current Characteristic of Triacs

(Bidirectional Device)
+ Current

Quadrant 1
MainTerminal 2 +
Symbol Parameter VTM
VDRM Peak Repetitive Forward Off State Voltage
on state
IDRM Peak Forward Blocking Current IH
VRRM Peak Repetitive Reverse Off State Voltage IRRM at VRRM
IRRM Peak Reverse Blocking Current
VTM Maximum On State Voltage off state + Voltage
IH Holding Current IH IDRM at VDRM

Quadrant 3
VTM
MainTerminal 2 –

Quadrant Definitions for a Triac

MT2 POSITIVE
(Positive Half Cycle)
+

(+) MT2 (+) MT2

Quadrant II (–) IGT (+) IGT Quadrant I

GATE GATE

MT1 MT1

REF REF

IGT – + IGT

(–) MT2 (–) MT2

Quadrant III (–) IGT (+) IGT Quadrant IV

GATE GATE

MT1 MT1

REF REF

–
MT2 NEGATIVE
(Negative Half Cycle)

All polarities are referenced to MT1.

With in–phase signals (using standard AC lines) quadrants I and III are used.

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 2N6344A, 2N6348A, 2N6349A

110 20
30° dc

PAV , AVERAGE POWER (WATTS)

TC , CASE TEMPERATURE ( °C)

60° 16 α
100
90°
α
120°
12
180° α = CONDUCTION ANGLE
90
TJ = 110°C 180°
α 8.0
120°
α 90°
80 60
4.0
α = CONDUCTION ANGLE α = 30° °
dc
70 0
0 2.0 4.0 6.0 8.0 10 12 14 0 2.0 4.0 6.0 8.0 10 12 14
IT(RMS), RMS ON-STATE CURRENT, (AMP) IT(RMS), RMS ON-STATE CURRENT (AMP)

Figure 1. RMS Current Derating Figure 2. On–State Power Dissipation

1.8 50
Vgt , GATE TRIGGER VOLTAGE (VOLTS)

VD = 12 V VD = 12 V

I GT , GATE TRIGGER CURRENT (mA)

1.6
30
1.4
QUADRANT 4 20
1.2

1.0
1
0.8 1 10 2
QUADRANT
QUADRANTS 2 3
0.6 7.0 4
3
0.4 5.0
–60 –40 –20 0 20 40 60 80 100 120 140 –60 –40 –20 0 20 40 60 80 100 120 140
TJ, JUNCTION TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)

Figure 3. Typical Gate Trigger Voltage Figure 4. Typical Gate Trigger Current

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 2N6344A, 2N6348A, 2N6349A

100 20
GATE OPEN
70
MAIN TERMINAL #1

I H , HOLDING CURRENT (mA)

50 POSITIVE
10

30 7.0

20 5.0
MAIN TERMINAL #2
i TM , INSTANTANEOUS ON-STATE CURRENT (AMP)

POSITIVE
TJ = 100°C 25°C
10 3.0

7.0 2.0
–60 –40 –20 0 20 40 60 80 100 120 140
5.0
TJ, JUNCTION TEMPERATURE (°C)

3.0
Figure 6. Typical Holding Current

2.0
100

I TSM , PEAK SURGE CURRENT (AMP)

1.0 80
0.7

0.5 60

0.3 40 CYCLE

0.2 TJ = 100°C
20 f = 60 Hz
Surge is preceded and followed by rated current
0.1 0
0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 1.0 2.0 3.0 5.0 7.0 10
vTM, MAXIMUM INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) NUMBER OF CYCLES

Figure 5. On–State Characteristics Figure 7. Maximum Non–Repetitive

Surge Current
r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

1.0

0.5

0.2
ZθJC(t) = r(t) • RθJC
0.1

0.05

0.02

0.01
0.1 0.2 0.5 1.0 2.0 5.0 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t,TIME (ms)

Figure 8. Typical Thermal Response

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 2N6344A, 2N6348A, 2N6349A

PACKAGE DIMENSIONS

TO–220AB
CASE 221A–07
ISSUE Z

NOTES:
SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI
–T– PLANE Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
B F C BODY AND LEAD IRREGULARITIES ARE
T
S ALLOWED.
INCHES MILLIMETERS
DIM MIN MAX MIN MAX
4
A 0.570 0.620 14.48 15.75
Q A B 0.380 0.405 9.66 10.28
C 0.160 0.190 4.07 4.82
1 2 3 U D 0.025 0.035 0.64 0.88
H F 0.142 0.147 3.61 3.73
G 0.095 0.105 2.42 2.66
K H 0.110 0.155 2.80 3.93
Z J 0.014 0.022 0.36 0.55
K 0.500 0.562 12.70 14.27
L 0.045 0.060 1.15 1.52
N 0.190 0.210 4.83 5.33
L R Q 0.100 0.120 2.54 3.04
R 0.080 0.110 2.04 2.79
V J S 0.045 0.055 1.15 1.39
T 0.235 0.255 5.97 6.47
G U 0.000 0.050 0.00 1.27
D V 0.045 ––– 1.15 –––
N Z ––– 0.080 ––– 2.04

STYLE 4:
PIN 1. MAIN TERMINAL 1
2. MAIN TERMINAL 2
3. GATE
4. MAIN TERMINAL 2

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 2N6344A, 2N6348A, 2N6349A

Notes

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 2N6344A, 2N6348A, 2N6349A

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