BP 2014 12

ISSN: 1863-5598 ZKZ 64717
12-14
Electronics in Motion and Conversion December 2014

o-f.de
The VARIS™ concept –
flexible power based on
a modular concept
VARIS™ – the modular inverter system
The modular and flexible design of VARIS™ offers compelling benefits. The
desired power can be easily achieved via parallel connection of the modules.
You are also free to choose your preferred cooling type. And the use of
standard components makes VARIS™ both cost-efficient and sustainable.
Talk to the House of Competence, because VARIS™ fears no comparison.
● IGBT classes: 1200 V or 1700 V, up to 1400 A

● Parallel connection
● Air or water cooling engineered by
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CONTENT
Read online and search for key subjects from all articles in Bodo’s
Power Systems by going to Powerguru: www.powerguru.org
Superior Solutions for

Viewpoint ........................................................................................... 4
The Boxes are Open and Toy Trains are Running Again Industrial
Events ................................................................................................ 4
News ............................................................................................ 6-12

and Energy.
Blue Product of the Month ............................................................. 14
Microchip Development Tool Competition
Microchip
Guest Editorial ................................................................................ 16

Youthful Power Electronics
By Braham Ferreira, Professor at TUDelft
and elected IEEE PELS president (2015-6)
Market .............................................................................................. 18
Electronics Industry Digest
By Aubrey Dunford, Europartners
Market ........................................................................................ 20-21

Developments in the AC-DC External Power Supply Market
Richard Ruiz, Research Analyst, Darnell Group
Technology Driving Markets .................................................... 22-23

eGaN® Technology: Transforming the Future
By Alex Lidow Ph.D.; Efficient Power Conversion
Cover Story ............................................................................... 24-28

Enhanced Trench IGBTs and Field Charge Controlled Diode
By Liutauras Storasta, Chiara Corvasce, Maxi Andenna, Sven
Matthias, Raffael Schnell and Munaf Rahimo, ABB semiconductors
Design and Simulation ............................................................. 30-33

LLC Resonant Converter Simulation Using PLECS
By Munadir Ahmed, Plexim Inc. and Min Luo, Plexim GmbH
Aluminum electro- Common-mode
IGBTs ......................................................................................... 34-35 lytic capacitors for chokes for high
Kelvin Emitter Configuration Further Improves Switching high ripple currents currents
Performance of TRENCHSTOP™ 5 IGBTs
By Vladimir Scarpa and Fabio Brucchi, Infineon Technologies AG PFC products for Varistors and surge
energy saving and arresters for over-
Digital Power ............................................................................. 36-39 power quality voltage protection
Digital Power Comes of Age
By Mark Adams, CUI Inc; Patrick Le Fèvre, Ericsson Power Modules; EMC and sine-wave High reliability
Steve Pimpis, Murata filters for currents power capacitors
up to 8 kA
Power Management .................................................................. 40-43
Tiny Power Components for Wireless Charging,
Step Down Conversion and “Always On” Devices X and Y capacitors Output chokes
By Wolfgang Patelay, Freelance Journalist Bodo’s Power Systems for EMI suppression up to 1500 A
Technology ................................................................................ 44-47
Active Vibration Control in Ultrasonic Wire Bonding
Improving Bondability on Demanding Surfaces
By Dr.-Ing. Michael Brökelmann, Hesse GmbH
Test and Measurement ............................................................. 48-49

Automated Acoustic Inspection for IGBT Modules Various types of High reliability SMT
By Tom Adams, consultant, Sonoscan, Inc. MLCCs for highest power inductors
reliability
Lighting ..................................................................................... 50-51
More Light with Less Power
Pulse transformers Large ferrite
By Wolfgang Patelay, Freelance Journalist, Bodo’s Power Systems
for LA N interfaces cores
New Products ........................................................................... 52-64
www.bodospower.com
www.tdk.eu · www.epcos.com
The Gallery
2 Bodo´s Power Systems® December 2014 www.bodospower.com

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VIEWPOINT
CONTENT
The Boxes are Open

and Toy Trains are
A Media
Katzbek 17a
D-24235 Laboe, Germany
Phone: +49 4343 42 17 90
Running Again
Fax: +49 4343 42 17 89
editor@bodospower.com
www.bodospower.com
Publishing Editor
Bodo Arlt, Dipl.-Ing.
editor@bodospower.com
Senior Editor It is Christmas time again, and I have fond
Donald E. Burke, BSEE, Dr. Sc(hc) memories of my toy trains. Engineers often
don@bodospower.com played with technical toys when they were
Corresponding Editor children, and electric trains inspired a num-
Dipl.-Ing. Wolfgang Patelay
Wpatelay@t-online.de ber of them, including me. And the fascina-
UK Support tion is still there. Our grandson, soon to be
June Hulme five, looks at my vintage trains with respect.
Phone: +44(0) 1270 872315 He knows they have been running almost as
junehulme@geminimarketing.co.uk long as I have. My parents, mostly my father,
Creative Direction & Production also got me interested when I was a five.
Repro Studio Peschke Mine are HO, the most popular size, mean-
Repro.Peschke@t-online.de ing “Half Zero”, a size started by Marklin
Free Subscription to qualified readers over 100 years ago, while Lionel in the US
Bodo´s Power Systems continued with Size O.
is available for the following
I’ve just returned from the electronica in
subscription charges:
Annual charge (12 issues) Munich, the platform for the world to show
is 150 € world wide what is currently available and what will drive
Single issue is 18 € the next level of design. And sps ipc drives
subscription@bodospower.com in Nuremberg has shown the practical solu-
tions for drives and the control of industrial
circulation print run 24 000 applications.
Printing by: Communication is the only way to prog-

Druckhaus Main-Echo GmbH & Co KG ress. We delivered nine issues this year,
63741 Aschaffenburg, Germany and December marks 140 technical articles
A Media and Bodos Power Systems published year to date, amongst 870 pages.
assume and hereby disclaim any I was involved in the early applications of the They are all archived on my web-site and
liability to any person for any loss or IGBT, as I have related in previous view- also retrievable at PowerGuru. Bodo’s Power
damage by errors or omissions in the
points. I met Frank Wheatley through my Systems serves readers across the globe. If
material contained herein regardless
of whether such errors result from frequent interactions with the engineering you speak the language, or just want to have
negligence accident or any other cause group, and must have mentioned my passion a look, don’t miss our Chinese version: www.
whatsoever. for toys. One day, Frank pulled me aside, bodospowerchina.com.
opened the trunk of his car, and said, “These
are for you,” and gave me a set of Lionel size My Green Power Tip for December:
Events O. These memories come around at Christ- It is Christmas time, and we should open
mas time. Frank passed away last month, ourselves to peace and freedom for our one
Embedded World 2015, and I have lost a friend who could have been world.
Nuremberg, Germany, February 24-26 my father. We had many enjoyable discus- It is a time to help the poor. We must remove
www.embedded-world.de sions of life and technology during my visits the fences and borders between people. We
APEX 2015, to Mountaintop, PA. In addition to the tales need to fight for education for all, particularly
San Diego, CA, Feb. 24-26 of his inventing the IGBT, he told me about the young, as it is the most important factor
http://www.ipcapexexpo.org his life, and that his greatest satisfaction for peace and freedom.
ESARS 2015, Aachen, Germany, came from having designed an amplifier that
March 3-5 www.esars2015.org/ enabled a child to hear for the first time. I Merry Christmas
APEC 2015, Charlotte, NC, March 15-19 plan to take Frank’s diesel and steam loco-
www.apec-conf.org/ motives out for a ride. From the early days
New Energy Husum 2015, on, electronics have improved all of our lives,
Husum Germany, March 19-22 and have helped the handicapped.
www.new-energy.de/new_energy/de/
EMC 2015, Stuttgart, Germany, March 24-26
www.mesago.de/en/EMV/home.htm

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www.lem.com At the heart of power electronics.

CONTENT
NEWS
Small and Medium Wind Systems – Microgrids and Minigrids

The World Wind Energy Association (WWEA) and New Energy The main theme of the 6th WSSW is Small and Medium Wind Sys-
Husum are pleased to invite all small and medium wind stakeholders tems – microgrids and minigrids based on 100% renewable energy.
to participate in the 6th World Summit for Small Wind (WSSW2015), The summit is aimed at jointly exploring more ways of wind power
taking place in Husum/Germany on 19, 20 and 21 March 2015, in application and flexible matching means to meet market demand on
parallel with the New Energy Husum Trade Fair 2015 (19- 22 March islands.
2015).
The New Energy Husum trade fair is the leading trade fair for small-
scale wind technology. The fair features the grass roots energy transi-
www.small-wind.org
tion, and will be focussed on own consumption of renewable energy,
alternative mobility with electric vehicles, and energy-efficient and
ecological building and renovation.
SEMICON Europa 2014 Brings the Supply-Chain Closer Together

From Heinz Kundert, the SEMICON Europa SEMICON Europa in Grenoble enriched potential business for exhibi-
President: tors and attendees beyond equipment and materials by showcasing
The big picture in microelectronics was very new opportunities of nontraditional markets such as design tools
clear at SEMICON Europa 2014. Consolida- (EDA), Packaging, Components or Systems in Imaging, Medtech,
tion will continue as the race to new tech- Power Electronics, Plastic Electronics, Security and more.
nologies and applications will move on. The
exhibitors, events and special pavilions at
SEMICON Europa 2014 clearly demonstrated
www.semi.org/europe
the strengths of Europe’s microelectronic
ecosystem.
EPE 2015 ECCE Europe is Approaching fast

It will take place from 8 - 10 September 2015, in Geneva, Switzerland.
Get prepared for the Exhibition around the Conference.
For its 2015 edition, more than 1200 participants are expected.
Do not miss the opportunity to present your activities, services and
products at EPE’15 ECCE Exhibition.
ABB is the main industrial sponsor of the EPE’15 ECCE conference,
recently joined by Mersen, GaN Systems, ECPE, Opal-RT, Advanced
Motor Tech.
Do not hesitate to contact us, you can also follow this link to find http://event-epe2015.web.cern.ch/content/sponsors-exhibitors
further information about the sponsorship:
Working with Intel to Enable a Wire-Free World

Integrated Device Technology (IDT) announced it is working closely IDT partner with us on bringing A4WP-based wireless charging to the
with Intel on the development of wireless charging solutions to accel- market quickly and successfully.” “Intel and IDT together will deliver a
erate the delivery and adoption of the nascent technology. As silicon new level of wireless charging capabilities to an increasingly un-wired
and solutions leaders in wireless charging, the two companies expect world,” said Arman Naghavi, vice president and general manager of
to bring a new generation of wireless capabilities that make charging the Analog and Power Division at IDT. “Working closely together, we
consumer products easier than ever. Based on magnetic resonance are fundamentally changing the way people power up their devices.”
technology, these capabilities will enable the charging of multiple IDT is a supplier of wireless power transmitter and receiver solutions
devices simultaneously and through chargers built into objects such for wireless charger applications, addressing all major standards and
as tabletops. This collaboration is the latest step in IDT’s drive to de- technologies with an extensive portfolio of standards-certified prod-
liver relief from the worry of running out of power, the clutter of wires, ucts. The company has proven expertise in both magnetic induction
and the need to travel with chargers. The two companies, both board and magnetic resonance technologies, and actively participates in the
members of the Alliance for Wireless Power (A4WP), will define, Wireless Power Consortium (WPC), Power Matters Alliance (PMA),
design and manufacture next-generation solutions that comply with and Alliance for Wireless Power (A4WP) as a board member. It has
the A4WP magnetic resonance standard. The new technology will introduced a number of innovative and award-winning products, in-
offer the ability to charge both lower and higher power devices, from cluding the first true single-chip transmitter, the highest-output-power
wearables and phones to tablets and PCs. The companies expect to single chip receiver, and the first dual-mode receiver IC compatible
have their technology in products in 2015. with both WPC and PMA standards. Prominent industry players have
“Intel’s ‘No Wires’ vision will free consumers of dealing with power recognized this leadership and partnered with IDT as their silicon
cables and deliver the easiest, most convenient way to charge all their vendor for next-generation wireless power solutions.
devices, at home, at work and on the go,” said Sanjay Vora, vice pres-
ident and GM of User Experiences for Intel. “We are excited to have www.idt.com

Capacitors for Power Electronics
IGBT Snubbers
RF Mica Capacitors
DC Link Capacitors
-High Current, High Voltage Film
-High Capacitance Aluminum Electrolytic
www.cde.com
AC Output Harmonic Filter Capacitors
CONTENT
NEWS
Expert to Present at SMTA Space Coast and Tampa Bay Expo & Tech Forum
Indium Corpora- tation, Meeting Future Stencil Printing Community College, where he received the
tion’s Ed Briggs, Challenges with Ultra-Fine-Powder Solder Douglas J. Bauer Award for Excellence in
senior technical Pastes, discusses a statistical comparison Chemistry. In addition, he earned his Six
support engineer, of the transfer efficiency of different solder Sigma Green Belt from Dartmouth College.
will present at powder particle sizes, specifically types 3, Briggs joined Indium Corporation in 1990 and
the SMTA Space 4, 5, and 6; and reviews observations of has held a variety of positions in production
Coast and Tampa post-reflow results in both harsh and optimal and technical support.
Bay Expo & Tech conditions.
Forum on Dec. 4 in Briggs is an SMTA-certified process engi- www.smta.org
Kissimmee, Fl. neer. He earned his associate degree in
Briggs’ presen- chemical technology from Mohawk Valley www.indium.com
Synapse Design launches Power Saving Cloud Computing Platform

Synapse Design, SOC and ASIC design services partner serving the same compute performance while enabling increased networking
tier-one system and semiconductor companies, announced its Cloud throughput with advanced hardware techniques. Deploying this solu-
hardware platform based on a Freescale T4240 network processor tion at scale will save power when compared to competing architec-
and natively running OpenStack Icehouse. The Cloud hardware plat- tures with equivalent compute performance. One of our key enablers
form is a configurable design targeted at medium to high performance is a fully embedded Linux distribution that we have integrated specifi-
cloud appliance storage and compute markets. “As the amount of cally for this environment.”
The Synapse Design platform is massively configurable, with the
initial reference platform having 24 processing threads, four 10GbE
channels, eight 1GbE channels and supporting 96TB of SSD stor-
age with currently available drive technology. Compute and storage
instantiations with a large variety of configurations can be enabled
easily and a variety of host and drive side interfaces are available.
The company has a strong heritage in data storage device and
systems design and is well positioned to help datacenter customers
achieve greater performance and value through intimate knowledge
data being pumped into the cloud continues to grow exponentially, we of flash and rotating media subsystems. Reducing power in the data
saw an opportunity to leverage our expertise in the storage domain center while maintaining or even increasing compute capability helps
and have developed a cloud platform that could lower the cost per to decrease overall total cost of ownership. Building on open source
terabyte over a three-, five- and seven-year period,” said Satish tools further reduces these development costs. Better insight means
Bagalkotkar, President/CEO & Co Founder of Synapse Design. Mike better predictability.
McKean, Senior Director for Synapse Design Embedded Systems ef-
forts added: “Our implementation provides 50 percent lower power for http://www.synapse-da.com
Architects of Modern Power Consortium Select

Intersil Digital DC/DC Controllers
Intersil Corporation (NASDAQ: ISIL), a leading provider of innova- “We’re excited the Architects of Modern Power consortium have ad-
tive power management and precision analog solutions announced opted Intersil’s innovative digital power solutions,” said Mark Downing,
that three of its digital DC/DC controllers have been incorporated into senior vice president of infrastructure and industrial power products
digital point-of-load (POL) DC/DC converters developed by the found- at Intersil. “Intersil is at the forefront of digital power, and continues
ing members of the Architects of Modern Power (AMP) consortium. to deliver controllers that push the higher efficiency, current density
These converters provide high current loads for high-end FPGAs and and transient response performance that our customers’ applications
ASICs employed in densely populated power supplies in servers, stor- demand.”
age equipment and basestations. Intersil offers a comprehensive family of digital power controllers that
Intersil’s DC/DC digital controllers support the AMP Group’s micro- provide 4.5V to 14V input voltage rails and scalable output current
Amp 20 to 25A and megaAMP 40 to 50A standards. These new from 6A to over 300A. Intersil DC/DC controllers provide industry
standards were announced separately today by the AMP Group, and leading digital power features, including automatic compensation,
establish common mechanical and electrical specifications for the pin-strap current sharing, and Intersil’s proprietary DDC (digital DC)
development of advanced power conversion technology for distributed bus for inter-controller communication. The DDC bus enables system-
power systems. based sequencing, fault management and current sharing with other
“Architects of Modern Power selected Intersil’s digital controller tech- Intersil digital power devices, all on a single wire.
nology for our microAmp and megaAMP module standards because
they provided the most advanced feature set on the market,” said www.ampgroup.com
Mark Adams, AMP Group spokesperson. “Simply converting one volt-
age to another voltage is no longer an option for our customers. Now, www.intersil.com
perfect voltage conversion under all conditions is required. Intersil’s
digital power technology helps us achieve this.”

Pre-Applied
Thermal Interface Material (TIM)
The Infineon-qualified solution
With the ongoing increase of power densities in power electronics the thermal interface
between power module and heatsink becomes a larger challenge. A thermal interface
material, especially developed for and pre-applied to Infineon’s modules outperforms the
general purpose materials available.
TIM does not only provide the lowest thermal resistance, it also fulfills the highest quality
standards given for power modules to achieve the longest lifetime and highest system
reliability.
Main Features
Best in class thermal resistance 110
Pre-applied to Infineon Modules 100

Dry to the touch
90
Optimized for dedicated Infineon Modules
Tj–Tamb [K]
80
70
Benefits
60
Reduced process time in manufacturing
Simplified mounting 50
1 2 3 4
Increased system reliability 5
Time in HTS* [Weeks] n MOD-3
Increased system lifetime *HTS: High Temperature Storing, n MOD-2
Stresstest 1000 h, 125 °C
Optimized thermal management n MOD-1
n IFX-Solution
Improved handling in case of maintenance
www.infineon.com/tim
CONTENT
NEWS
Opening the new RECOM Company Headquarter

You will find them in almost all electronic prod- the design team were to establish an innovative building with archi-
ucts, but only few people realize how much tectural clarity. Added value was to be created not only for employees,
know-how and development work are concen- but for the complete customer, business partners and the local sci-
trated in RECOM’s power converters, switch- entific community Eco-system. Easy access to high value equipment
ing regulators and LED drivers. During the last
20 years, this medium sized owner managed
company has become a leading supplier of
power modules on a worldwide basis – in-
novative products from Austria. Subsidiaries
in Frankfurt, New York, Singapore and Shanghai, as well as an auto-
mated production center located in Taiwan, are managed and steered
from the newly conceived „Think Tank“ in Gmunden.
This new company center also brings a new concept to Austria. „ We
offer a platform for innovation and contact to the power world“ is how
the CEO, Karsten Bier, explains the company philosophy and the new
3,000m2 (30,000 sq.ft.) building offers sufficient space to live and
breathe this vision. “This is why the doors of the EMC, Test and Qual-
ity Laboratories, which cost two million dollars to implement, are also for internal and external users was part of the charter. The concept
open to industrial customers and students of Austrian and German eventually realized by the architects Kollmann & Mayrhauser in coop-
universities. The idea is to implement a „RECOM-Campus“, including eration with the designer Andrea Bier followed modern and effective
the availability of apartments, in this high tech, low-energy building. principles of architectural space. The optimized symbiosis between
Additionally, we will open 300 m2 of office space to help start-ups and technology, design and workspace provides a creative and produc-
cooperating partners to further enhance the flow of information“ says tive atmosphere. The ecologically aware design uses state-of-the art
Karsten Bier. technology to help preserve and sustain valuable natural resources.
After years of above average growth, it became necessary to expand
RECOM’s capacities in all areas. The guideline for the architects and www.recom-electronic.com
New Application Lab in Korea

Alpha, the world leader in the development and production of elec- (Customer Technical Service) engineers so our staff remains current
tronic soldering materials, today announced the addition of a new ap- on how best to address and resolve technical issues in the field.”
plication lab in Korea. The lab will focus on trial or evaluation testing The new application lab in Korea will help Alpha’s customers save
of products for new projects and supports Alpha’s mission to provide significantly by shortening the amount of time it normally takes to
superior technical support to their valued customers. get a project up and running and also by training the CTS support
Equipment at the new application lab includes an SMT Printer, Reflow in advance to ensure delivery of expertise and quality while on the
Machine, X-section, Thermal Shock Chamber, Solder Paste Inspec- production floor.
tion Machine and Chip Mounter Machine. For more information on Alpha’s global service capabilities and vast
“Many key customers have already visited the lab and have conduct- product offering, visit
ed as many as 10 trial production runs with our products for their new
projects,” said S.S. Park, Technical Services Director for Alpha Korea.
“In addition, we are offering training courses at the lab for new CTS
www.alpha.alent.com
ECPE Calendar of Events 2015

Tutorials and Workshops in the first half of 2015: • ECPE Tutorial ‘Power Electronics Packaging’
• ECPE Tutorial ‘EMC in Power Electronics’ June 2015, Hamburg, Germany
2 – 3 March 2015, Lausanne, Switzerland Chairmen: Prof. U. Scheuermann (Semikron), T. Harder (ECPE)
Chairmen: Prof. E. Hoene (Fraunhofer IZM), Prof. J.-L. Schanen • ECPE Workshop ‘µPower Electronics/PowerSoC: Powering Low-
(G2ELab) Power Systems’
• ECPE Workshop ‘6th ECPE SiC and GaN User Forum’ 16 – 17 June 2015, Munich, Germany
20 – 21 April 2015, Warwick, UK Chairmen: Prof. B. Allard (INSA de Lyon), Prof. J. Cobos (UPM),
Chairmen: Prof. P. Mawby (Univ. of Warwick), Prof. A. Lindemann Prof. C. O’Mathuna (Tyndall)
(Univ. of Magdeburg) and Technical Committee • ECPE Tutorial ‘Thermal Engineering of Power Electronic Systems -
• ECPE Lab Course, EMC Optimised Design (Parasitics in Power Part I (thermal design and verification)
Electronics) 21 – 22 July 2015, Erlangen, Germany
27 – 28 April 2015, Berlin, Germany Chairmen: Prof. U. Scheuermann (Semikron), D. Malipaard
Course Instructor: Prof. E. Hoene (Fraunhofer IZM) (Fraunhofer IISB)
• ECPE Tutorial ‘Power Semiconductor Devices & Technologies’ On the ECPE website you always find the up-to-date information on
29 - 30 April 2015, TBD the ECPE Events:
Chairman: Prof. D. Silber (Univ. of Bremen) www.ecpe.org

CONTENT
NEWS
Energy Conversion Congress and Exposition

(ECCE 2015), Montreal, Canada
The IEEE Industry Applications and Power Electronics Societies interactive and multidisciplinary discussions on the latest advances in
are pleased to announce The 7th Annual IEEE Energy Conver- various areas related to energy conversion. Please visit http://2015.
sion Congress and Exposition (ECCE 2015), which will be held in ecceconferences.org for more information or contact the ECCE 2015
Montreal, Canada, on September 20 - 24, 2015. ECCE 2015 is the Technical Program Chairs at ecce2015tpc@gmail.com. Key dates
pivotal international conference and exposition event on electrical are: Jan 15 for extended digests submitted via website; Feb 16 for
and electromechanical energy conversion. ECCE 2015 will feature Tutorial proposals; and March 31 for Special Session proposals.
both industry-driven and application-oriented technical sessions,
as well as industry expositions and seminars. ECCE 2015 will bring
together practicing engineers, researchers and other professionals for http://2015.ecceconferences.org/
Design a Custom Electric Motor Drive using COTS Components

Custom electric motor drive system design is a complex process and Topic addressed In this ebook are:
the goal of this new ebook is to give you guidelines to make it eas- • reasons to design a custom electric motor drive,
ier. While there exists many publica- • reasons to use COTS components,
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elements of electric motor drive design • how to plan the software development,
(such as electric motor design, power • how to develop the embedded motor control software,
stage design, control design, etc.), very • five steps process of an electric motor drive development and
few address the whole process from • how Alizem can help.
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ook, Alizem’s Dr. Marc Perron shares Whether you are a project manager, a system / mechanical / electrical
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complex field of power electronics ap- tions to help you achieve your objectives faster and easier. Download
plications with a particular focus on the this ebook for FREE at
challenges related to embedded motor
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Hitachi Europe Limited,

Whitebrook Park,
Lower Cookham Road,
Maidenhead. SL6 8YA.
+44 (0)1628 585261
nHPD2@hitachi-eu.com
www.bodospower.com December 2014 Bodo´s Power Systems® 11

CONTENT
NEWS
Web-based Automotive Electronics Solutions Interface to

Enhance Safety and Improve Reliability
Power management company Eaton unveiled efforts by its Electron- requirements. Components meeting these specifications are suitable
ics Division to enhance the safety of automotive electronics with a in harsh automotive environments and Eaton has tested these new
multi-tiered initiative to meet the industry’s growing demand for highly products to ensure they meet the standards.
reliable, superior magnetics, supercapacitors and circuit protection The MPIA4040, HCMA0503, HCMA0703, HCMA1305, HCMA1707
products. The initiative features a web-based Automotive Electron- and DRAQ127 are new inductors from the Coiltronics product family
ics Solutions (AES) portal designed to accelerate specifications and that are manufactured to rigorous automotive standards in TS16949
selection of components based on a wide range of individual automo- certified factories. The MPIA4040 product line offers automotive
tive systems and requirements. Eaton is supporting AES with new grade, high current, high frequency, miniature power inductors made
safety-certified products, manufacturing technology advancements of composite material offering AEC-Q200 Grade 3 (-40°C to 85°C)
and doubling of production capacity. It also includes the expansion of compliance and 125°C maximum total temperature operation for both
research and development. interior and exterior applications. The HCMA products are high cur-
“Eaton’s Electronics Division is committed to meeting ever-more rent power inductors made of a powder iron core material that offers
stringent demands of the automotive industry as new safety standards high current carrying capacity and low core losses. This product line
are introduced and requirements for high-performance and reliability is also certified AEC-Q200 Grade 3. The DRAQ127 products are an
expand,” said John Janis, Vice President and General Manager for addition of several inductance values to broaden the offering of this
Eaton’s Electronics Division. “Eaton is recognized globally as a leader automotive-grade shielded drum core inductor series. These devices
in power management components. With the constantly growing are typically used in interior, exterior and under-the-hood applications
number of electronics systems in vehicles today and their individual with a 165°C maximum total temperature operation, tested to AEC-
and diverse safety and power requirements, we’ve designed Automo- Q200 Grade 1.
tive Electronics Solutions to make the process of selecting the right Eaton’s PowerStor HV Series Supercapacitors are now qualified to
component more intuitive.” meet major automotive OEM test standards with an extended operat-
The AES tool provides an online guide that helps designers identify ing temperature range of -40°C to 85°C. The HV series offers high
the products they need by selecting a particular system or application capacitance and ultra-low ESR. Applications range from active shut-
area of the vehicle. The resource identifies the following application ters to safety systems for door locks and communications.
areas: The Bussman CC12H High I2t Chip fuse series (1A-5A) has been
• Infotainment/telematics; extended to meet AEC-Q200 standards. Eaton has expanded the
• Airbag control unit; existing product line down to 750mA and from 6A to 20A to meet
• Power doors, window lift, mirrors, seat control; requirements for infotainment and engine control unit applications.
• Port power / USB hub; Over the last two years, Eaton has reinforced the reputation of
• Engine start; Coiltronics, Powerstor and Bussmann product families by investing in
• Engine and powertrain control module; state-of-the-art manufacturing equipment to improve the reliability of
• Electronic power steering / electric parking brake; the products. It has also grown research and development efforts so
• Headlamp, tail lamp, interior lighting; that these products deliver performance and reliability even as system
• Digital instrument cluster; specifications change and become more demanding. And the expan-
• Advanced driver assistance system. sion of capacity means that Eaton can be a reliable supplier in volume
production systems. Sample of Eaton products are available at www.
Introduction of AEC-Q200-certified power products enhances Eaton eaton.com/elx or can be purchased from Mouser or DigiKey.
Electronics Division’s position in the automotive sector. The Auto-
motive Electronics Council Component Technical Committee has
defined the AEC-Q200 as common electrical component qualification www.eaton.com
Comprehensive Suite of Solution for Lighting Applications

FCI introduced a comprehensive suite of “FCI is fully committed to support the Light-
solutions for Lighting applications. ing market with our comprehensive suite of
The FCI suite of products consisting of Wire- products. We want to create a one-stop shop
to-Board, Wire-to-Wire, Wire-to-Panel and for all lighting applications. We endeavor to
Board-to-Board configurations, are suitable introduce more innovative solutions for this
for a variety of lighting applications such as market in the near future,” comments Fab-
retrofit lamps, indoor/outdoor fixtures, sig- rizio Stango, Commercial Portfolio Director
nage, specialty lighting and lighting controls. at FCI.
The solutions support a range of current For more information about our solutions
rating and voltage rating requirements, as for the LED and Lighting application or for
well as a wide range of operating tempera- a copy of the Lighting Application brochure,
ture range. RotaConnect™, Terminal Blocks, please contact us at
Universal Contacts and the newly launched communications@fci.com.
Minitek Pwr™ and Griplet™ are highly suit-
able interconnects for the Lighting market. www.fci.com

BLUE PRODUCT
CONTENTOF THE MONTH
Win a PICDEM LCD 2

Demonstration Board
from Microchip
Bodo’s Power is offering you the chance to win a PICDEM LCD 2 the voltage of the thermistor and continuously displays the tem-
Demonstration Board. The PICDEM LCD 2 Demonstration Board perature in both Celsius and Fahrenheit. The Timer/Clock function
(DM163030) shows the main features of Microchip’s 28, 40, 64 and showing hours:minutes:seconds with a moving second hand, using on
80-pin LCD Flash PIC microcontrollers including the LCD voltage board 32 kHz watch crystal. Also, when using the PIC18F87J90 family
booster and contrast controller. It is populated with the PIC18F87J90. of devices the LCD module can be configured as a charge pump and
A sample LCD glass display is included for custom prototyping. The software contrast control is activated.
glass features 7-segment displays, wipers, thermometers, star bursts,
and other common icons. For the chance to win a PICDEM LCD 2 Demonstration Board, please
visit http://www.microchip-comps.com/bodo-lcd2-dev and enter your
Some of the applications included are: a voltmeter, which measures details in the entry form.
the voltage of the on board potentiometer and displays a voltage
between 0.00V and 3.30V on the LCD, a thermometer that measures www.microchip-comps.com/bodo-lcd2-dev

Allegro BLDC Motor Controllers
Simplify Designs
Flexible solution supports designs with or without micro or DSP

The Allegro A4915 Three-Phase MOSFET Driver’s innovative SPEED input and fully integrated
block commutation delivers simple speed control of a BLDC motor with a single analog voltage.
Existing Solution Allegro Solution
Reduces PCB by 75%
Representatives
ALLREM SSG Semiconductor Systems GmbH Consystem S.r.l.
94616 Rungis Cedex, FRANCE D79856 Hinterzarten, GERMANY I-20144 Milano, ITALY
Tel: +33 (0) 1 56 70 03 80 Tel: +49 (0) 7652-91060 Tel: +39 02 4241471
E-mail: info@allrem.com Website: www.ssg-de.com Website: www.consystem.it
E-mail: mail@ssg-de.com E-mail: support@consystem.it
www.allegromicro.com/camp1183
GUEST
CONTENT
EDITORIAL
Youthful Power Electronics

By Braham Ferreira, Professor at TUDelft and elected IEEE PELS president (2015-6)
Computer Engineering is 60 years old. Power Systems and Telecom- Acronym puzzle
munications are even older. Forthcoming out of these disciplines The last four years I have been closely
the original electrical engineering societies were founded 130 years involved with conferences and it in-
ago, including the VDE in Germany, IEE in the United Kingdom and trigued me how challenging it can be to
the AIEE in the USA. Power Electronics is comparatively young. come up with an acronym for an event
Despite the fact that power electronics started with the development or organisation that is unique and does
of the mercury arc rectifier that was invented by Peter Cooper Hewitt not twist the tongue. Power electron-
in 1902, it only recently emerged as a discipline that can stand on its ics related acronyms generally make use of a set of seven letters,
own feet. This was triggered by the spurt in technology development “A”,”C”,”E”,”I”,”M”,”P” and “S” and the acronyms have a special ring
of power semiconductor devices that occurred in the early eighties. about them if you say it loudly. Have you once seen the puzzlement
Power MOSFETs, Schottky diodes, GTOs and IGBTs made it possible on the face of a friend or a colleague that is not an engineer when you
to build reliable, efficient and affordable converters for many ap- tell him to which conference you are going? You can see the question
plications and ever improving micro-computers made it possible do in their eyes; “Where do these nerdy names come from?”
advanced real-time digital control of electrical machines. By the end
of the eighties power electronics emerged as a distinct discipline with The largest common denominator is “PE”, standing for power elec-
its own journals and conferences. Last year the IEEE Power Electron- tronics, and is present in almost all acronyms: EPE, ECPE, PEMC,
ics Society celebrated its 25th anniversary and this year the European PESC, SPEC, APEC, PEAC, PEDES, ICPE, IPEC and IPEMC. The
Power Electronics Association became 25 years old. PELS global conference and European acronyms have two “E”s;
ECCE, EPE, ECPE while PCIM is the outlier as the only conference
For the next two years it will be my privilege to serve as President of that does not have an “E” in its name. Asian conferences all start with
IEEE PELS, taking over the reins to steer the professional society an “I” which stands for international: ICPE, IPEC and IPEMC. “A”
during a period when many exiting things are happening in the devel- stands for application and the two conferences, one in the US and the
opment and application of power electronics. It is a great honour to other in China use the same letters in a different sequence: APEC,
become the second European in the history of the Power Electronic PEAC. The meaning of “S” is the most inconsistent because in PESC
Society to take up this position. I look forward to strengthen the col- it means specialist, in SPEC it indicates Southern and in PEDES it
laboration between PELS and European institutions such as the EPE means system.
Association and ECPE when my term that starts on 1 January 2015.
http://ewi.tudelft.nl/epp
Important Author Dates The Seventh Annual IEEE Energy Conversion Congress and
January 15th , 2015: Digest submitted via the website Exposition (ECCE 2015) will be held in Montreal, Canada, on
May 1st, 2015: Notification of acceptance or rejection September 20 - 24, 2015. ECCE 2015 is the pivotal internation-
July 1st, 2015: Final papers with IEEE copyright forms
al conference and exposition event on electrical and electrome-
Other Important Dates chanical energy conversion. To be held for the first time outside
February 16th, 2015 : Submission of Tutorial proposals USA, ECCE 2015, in Montreal, Canada, will feature both indus-
March 31, 2015: Submission of Special Session proposals try-driven and application-oriented technical sessions, as well as
industry expositions and seminars. ECCE 2015 will bring togeth-
: er practicing engineers, researchers and other professionals for
interactive and multidisciplinary discussions on the latest
advances in various areas related to energy conversion.
Please visit http://2015.ecceconferences.org for more informa-
tion or contact the ECCE 2015 Technical Program Chairs at
ecce2015tpc@gmail.com.
For exhibiting at ECCE 2015, please contact Exhibition Chair,
Steve Sprague at ssprague@protolam.com.
For more about Montreal and its surrounding areas, please visit
http://www.tourisme-montreal.org/.

Integrating
Power with
Success
The Power to Succeed

Integrating British design and technology with the
exacting standards and reliability of China’s leading
high speed rail manufacturing industry delivers
the best in high power semiconductor
components and assemblies.
Dynex and CSR Times Electric working together
to bring our customers the power to succeed.
Products Current/A Voltage/V

High power IGBT/FRD modules 100~3600 1200~6500
Phase Control Thyristors 300~6800 1400~8500
Rectifier Diodes 400~10000 1400~8500
GTO 600~4000 1300~4500
Assemblies As per customer’s requirements
w w w. d y n e x s e m i . c o m
T: +44 (0)1522 502 901 +44 (0) 1522 502 753
E: power_solutions@dynexsemi.com
CONTENT
MARKET
Electronics Industry Digest

By Aubrey Dunford, Europartners
Makers and startups, not OPTOELECTRONICS recent four quarters to the prior four quarters,
tech providers, consumer Toyoda Gosei and Osram have extended increased by 5.8 percent.
goods companies or enter- their agreement which allows the companies Three power supply manufacturers an-
prises, will drive acceptance, to use each other’s patents for specific light nounced the formation of a new power
use and growth in the Inter- emitting diode, including white LED, and industry consortium, the Architects of Modern
net of Things (IoT) through laser technologies. The original agreement of Power (AMP). The founding members are
the creation of a multitude 2007 allowed both Osram and Toyoda Gosei CUI, Ericsson Power Modules and Murata
of niche applications, so significantly more freedom to develop, manu- – all global players developing advanced
Gartner. Gartner predicts that by 2017, 50 facture and market new products without power conversion technology for distributed
percent of IoT solutions (typically a product fear of unintentional violations of patents. By power architectures. The aim of the alliance
combined with a service) will originate in facilitating research at both companies, new is to create the most technically advanced,
startups that are less than three years old. developments in LED technology were en- end-to-end distributed power solutions – a
Individuals and small companies that span abled, including an acceleration of research complete ecosystem of hardware, software
the globe are developing IoT solutions to to improve the luminosity of LEDs. The new and support. This summer, Alpha opened
real-world, often niche problems. They are agreement extends the scope of the patents its new Die Attach Applications Center in
taking advantage of low-cost electronics, tra- covered by the original 2007 agreement, to Langenfeld, Germany, dedicated to serving
ditional manufacturing and 3D printing tools, include patents filed after the execution of the requirements of the LED/optoelectron-
and open-and closed-source hardware and the original agreement. ics and power semiconductor markets. This
software to create IoT devices that improve facility offers opportunities for European and
PASSIVE COMPONENTS
processes and lives, says Gartner. other global companies to run their assem-
TE Connectivity has completed the previ-
blies on the latest die attach equipment using
SEMICONDUCTORS ously announced acquisition of Measurement
advanced Alpha sintering, soldering, and
Measured in euros, European semiconductor Specialties, a supplier of sensor technologies
polymer technologies.
sales were € 2.393 billion in August 2014, including pressure, vibration, force, tem-
a 0.4 percent decrease over July and an perature, humidity, ultrasonics, position and DISTRIBUTION
increase of 8.3 percent versus August 2013, fluid, for a wide range of applications and Powered by one of the industry’s most com-
so the WSTS. On a YTD basis, semiconduc- industries. The acquisition of Measurement prehensive components database and inter-
tor sales increased by 6.1 percent in euros Specialties for approximately $ 1.7 billion, ex- active design capabilities, Arrow Electronics
versus the same period in 2013. pands TE’s sensor business significantly, and is offering parts.arrow.com, its first fully inte-
Microchip Technology, a provider of microcon- builds on their strength in harsh environment grated online product life cycle services en-
troller, mixed signal, analog and Flash-IP so- applications. Measurement Specialties will gine for electronics parts. Available via arrow.
lutions, warned that its quarterly sales would be included as part of TE’s Transportation com in German, French, Italian, Spanish and
be about 3 percent below its expectations. Solutions segment. English, users can meet their electronic com-
Samsung Electronics announced a plan to Germany’s total PCB revenues in August ponent needs through an intelligent search of
construct a new semiconductor fabrication recorded its highest sales since the pre-crisis millions of parts from hundreds of suppliers
plant in the company’s Godeok Industrial year of 2008, so the ZVEI. Total sales went by using comprehensive features, such as
Complex in Pyeongtaek to meet growing up by 3.1 percent in August year-on-year. product selectors, cross referencing and
demand for advanced semiconductor prod- Cumulative sales from January to August Bill of Material capabilities. Arrow’s web tool
ucts. Construction on the 790,000m2 site were up by 2.9 percent compared to the provides engineers with interactive reference
will begin during the first half of 2015, and same period last year. In terms of incoming designs and advanced design applications
operations are scheduled to begin sometime orders, August 2014 figures were up by for faster development cycles. Once users
during the second half of 2017. 13 percent from last year. Cumulative sales are finished designing using the interactive
China has implemented national policies to from January to August were up by 2.9 per- features, they can generate a Bill of Materials
expedite the development of its domestic cent compared to the same period last year. and purchase the parts, all without having to
IC design and semiconductor manufactur- Cumulative orders from January to August leave the site. Design engineers globally can
ing. Taiwanese semiconductor foundry UMC were up by 10.3 percent compared to the collaborate on shared designs securely using
will participate in a joint venture company same period last year. Book-to-bill ratio fell messaging and live updates, as well as with
focused on 12” wafer foundry services with back to 0.98. Arrow’s technical experts.
Xiamen Municipal People’s Government and
OTHER COMPONENTS This is the comprehensive power related ex-
FuJian Electronics & Information Group.
The Electronic Design Automation (EDA) in- tract from the «Electronics Industry Digest»,
Worldwide semiconductor capital spending
dustry revenue increased 6.3 percent for Q2 the successor of The Lennox Report. For a
is projected to total $ 64.5 billion in 2014, an
2014 to $ 1757.9 M, compared to $ 1653.4 M full subscription of the report contact:
increase of 11.4 percent from 2013, so Gart-
in Q213, so the EDA Consortium. Sequential eid@europartners.eu.com
ner. Equipment spending will increase 17.1
EDA revenue for Q214 increased 0.7 percent or by fax 44/1494 563503.
percent, at $ 39.2 billion, as manufacturers
compared to Q114, while the four-quarters
pull back on new fab construction and con-
moving average, which compares the most www.europartners.eu.com
centrate on ramping up new capacity instead.

Our team at the Nuremberg site is
currently looking to recruit a
Electrical Engineer
as Marketing Content
Specialist (m/f)
We are an innovative company with 2,900 employees worldwide. With our power modules
and systems, we have been a key presence on the international market for more than 60 years,
and our qualified and motivated staff are essential to this success. At our headquarters in
Nuremberg, where 1,300 of our employees are based, we develop new products and technologies
for application areas such as renewable energies, energy-efficient motor drives, industrial
automation systems, power supplies and commercial vehicles.
About the role About you

- Research/writing/editing of English language materials - University degree in electrical engineering or marketing/commu-
nication and several years of experience as technical writer
- Research, write and edit press materials, marketing mate-
in the field of electrical engineering
rials, online content for product promotion and business
development to align and harmonize messaging and drive - Excellent English writing skills at native level; good German
consistency across all external communications language skills, additional French skills helpful
- Support regional teams in managing the governance process - Ability to write for different media
required for the distribution of press releases, key message
- Hands-on work ethic / ability to work in a team but also with
documents and other promotional material as required
minimal supervision when required
- Support the Marketing Team in the review, production and
- Expertise in writing from source and editing copy and news,
governance of group marketing materials as required to
for advertising, promotion and other marketing objectives
support brand building and key marketing events
online and in print
- Align and manage workflow to reduce duplication of effort
- Up-to-date familiarity with the use of the internet, online
and streamline processes and standards in content develop-
communication and social media in promotion and brand
ment and translations
building
- Internal approval and signoff of press releases and
- Very strong organization, project management and time
posting/archiving of materials
management skills
- Ensure group-wide adherence to communications disclosure
- Ability to grasp technical terms and turn into readable copy
policy associated with material and promotional releases
- Appropriate issuance of press releases via news agency and
WebsiteUploading of promotional content onto web and
social media platforms
We look forward to receiving your application, Contact: Matthias Engel

preferably by email. Please include your earliest SEMIKRON Elektronik GmbH & Co. KG
start date and your salary expectations, Sigmundstraße 200,
together with the reference number: 90431 Nuremberg, Germany
E-Mail: jobangebote@semikron.com
14AF0096B www.semikron.com
CONTENT
MARKET
Developments in the AC-DC

External Power Supply Market
Richard Ruiz, Research Analyst, Darnell Group
Led by a number of traditional applications within the communica- sponsored by the Microprocessor Standard Committee (MSC) of the
tions, computers and consumer segments as well as a number of IEEE Computer Society. The project was authorized by the IEEE
emerging applications, the outlook for the external ac-dc power Standards Association Standards Board in June of 2010. Specifically,
supply market is expected to remain strong over the next several the Universal Power Adapter for Mobile Devices (UPAMD™) standard
years increasing from $10.7 billion in 2014 to $14.9 billion in 2019, a defines a power delivery connection between a power adapter and a
compounded annual growth rate (CAGR) of 6.9%. Although con- power-using device in the 10 Watt to <240 Watt range.
sidered one of the more conservative markets with little change in
technology when compared to the embedded ac-dc and dc-dc power A communications link between the power adapter and the mobile
supply markets, external power supplies are poised to experience a power-using device is also defined in this standard. The communica-
number of significant opportunities and developments in technology tions may be used to coordinate the power delivery and provide iden-
and materials over the next several years. tification between the power adapter and the device. While intended
for portable computing and entertainment devices, this standard may
One of the more interesting opportunities for external power is the also be used with other mobile devices in offices, homes or vehicles.
emergence of digital power. Traditionally, external ac-dc power sup-
plies have not been considered one of the “best” markets for digital The increased power level of USB 3.1, along with power being
power management and control. Composed of adapters and battery delivered to multiple devices, could drive the need for programmable
chargers primarily for portable devices, they are not part of the high- control of battery chargers and adapters. With such functionality
end, distributed power systems, which are better suited to digital already being a “preferred” mode of control in certain dc-dc converter
control. However, the “added functionalities” that enable increased applications, it will eventually migrate into external ac-dc power sup-
efficiency (and thus meet certain rating systems and regulations) are plies, as well.
starting to open this market for digital power management, particularly
at the IC level. Chip makers and power supply manufacturers now have the technol-
ogy needed to undertake the transition from clunky black bricks
As an example, CamSemi offers the C2160 PSS controller ICs that and wall warts to sleek, efficient digital power adapter architectures
are aimed at high-volume, universal input application rates at 1W to capable of exchanging information between the power source and the
8W, including chargers for mobile phones, digital cameras, hand- load and adjusting power use according to product need.
held games and other portable devices, along with external power
adapters. These devices are designed to help manufacturers comply Another area of interest is advancement in standby power manage-
fully with the latest efficiency requirements, including the 5-star rating ment. It is generally accepted that the energy consumed by external
system for mobile phone chargers. The key to the PSS controllers’ chargers left plugged into an outlet while disconnected from the end
performance is a proprietary, patented method of measuring the product – accounts for a substantial portion of the energy consumed
circuit’s output voltage and current level by mobile devices. The only means of eliminating this waste has been
with a mechanical switch, a feature rarely found on mobile-device
Drivers for digitally controlled external ac-dc power supplies are com- power supplies. To address this, a number of semiconductor com-
ing primarily from standards and regulations mandating stricter power panies have introduced products designed specifically to both lower
supply requirements. With the emphasis on increased energy ef- costs and reduce standby power in consumer electronic devices.
ficiency, manufacturers have the flexibility to offer power adapters that
can communicate changes in power requirements, such as higher or Dialog Semiconductor offers a digital pulse width modulation (PWM)
lower voltage, or to shut off completely when not in use. controller that was designed to efficiently drive low-cost, 10W power
bipolar junction transistor (BJT) switches to reduce the BOM cost in
Regulators in the both the US and the European Commission (EC) 5V/2A smartphone adapters and chargers. The company’s iW1679
have proposed minimum efficiency requirements for offline power allows designers to replace field effect transistors (FETs) with lower-
supplies. In fact, the EC’s Integrated Product Policy (IPP) program cost BJTs and address the market trends for lower standby power and
and the world’s top five cellphone makers have introduced a voluntary higher light-load and active average efficiency in smartphones, media
five-star energy rating system for mobile device chargers, making it tablets and consumer electronic products.
easier for consumers to determine which ones use the least energy.
This rating system covers all chargers currently sold by Nokia, Sam- The use of the Dialogs iW1679 enables designers to meet or exceed
sung, Sony, Ericsson, Motorola and LG Electronics, and ranges from the emerging global energy standards, including the stringent Europe-
five stars for the most efficient chargers down to zero stars for the an CoC Version 5, which is anticipated to require 76% active average
units consuming the most energy. efficiency and high light load efficiency down to 10% loads, as well as
the proposed U.S. DOE regulation, expected to require 79% active
There is also an opportunity to use USB 3.1 and another other average efficiency, and the Energy Star EPS 2.0, which will require
standards to promote digital control in external ac-dc power sup- 73% active average efficiency.
plies. For example the UPAMD/P1823 is a standards working group

o-f.de
CONTENT
VARIS™ –
In addition, technology developed by
Texas Instruments (TI) is also expected
they can also do without some of the bulky
cooling systems.
small compo-
nents with
to contribute to the reduction in standby
power. In March of 2014, Texas Instruments For example, the company hopes to reduce
introduced two flyback power solutions that the size of the charger bricks required by
big power
claim the highest energy efficiency and low- laptops today—or eliminate them altogether
est standby power consumption for 5-100W by incorporating the necessary electronics
ac-dc power supplies. The UCC28910 700V into the computer itself. The more compact
flyback switcher and UCC28630 high-power, design is also important for automobile ap-
green-mode controller with primary-side plications, where space is limited and weight
regulation (PSR) both achieve sub-30mW is important to fuel efficiency. Transphorm
standby power and expand TI’s portfolio of believes it can reduce wasted electricity by
flyback controllers covering a power range 90%.
of ac-dc adapters and power supplies used
in personal electronics, printers, white goods A startup called FINsix has developed laptop
and smart meters. power adapters that are 75% smaller than
their conventional counterparts. The technol-
Additional areas to watch are advances in ogy employed could also be used to improve
technology, components and materials, in the efficiency of a wide variety of devices and
particular advanced semiconductor materi- appliances, including washing machines and
als such as Gallium Nitride (GaN) which is air conditioners.
expected to have an impact on the power
supply market over the forecast period. The The FINSix adapter is GaN-based and is cur-
Adoption of GaN technology will have a rently expensive at $79.00 per unit (Retail for
major effect on the external power supply a PC) which is about 7 or 8 times as expen-
market over the next several years, as the sive as a common notebook power supply.
technology promises both smaller and more However, if they can they bring down the
efficient ac-dc power supplies and dc-dc cost into the same $/W as today’s designs it
converters. will have a transformative effect on the ac-dc
adapter industry. The 65W power adapter
According to GaN Systems, a Canadian operates at 30-100MHz and can be used to
manufacturer of power conversion semi- charge a variety of laptops or other devices
conductors for cleantech applications, GaN such as smartphone or tablets (it comes with
devices offer five key qualities that make a 2.1A USB connector)—it can even charge
it unique: high dielectric strength, high more than one device at a time.
operating temperature, high current density,
high-speed switching and low on-resistance. FINsix’s power adapter is called the Dart and
These traits are due to the properties of is an after-market charger that can work with
GaN, which when compared to silicon, a variety of laptops and other devices. This
offer ten times higher electrical breakdown GaN-based device shrinks power electronics
characteristics, three times the bandgap, and by increasing the frequency at which these
exceptional carrier mobility. devices operate. The higher the frequency,
the smaller the device can be. Ordinarily,
However, the current challenge faced by higher frequencies also reduce efficiency.
GaN technology remains cost, as an ex-
pensive and extensive process is required However, researchers at MIT and FINsix de-
to grow a GaN crystal or wafer on which veloped a way to recycle much of the energy ● Flexible combinations of
transistors and integrated circuits (ICs) can that’s normally lost inside a power adapter, the phase components
be fabricated. A number of companies are improving efficiency and making it practical ● Inverter power rating from
exploring the use of GaN technology in a to use frequencies 1,000 times higher than
290 kW to over 1.4 MW
variety of areas and once the process is those used in conventional power adapters.
implemented on a large enough scale, the Production of the North American Dart (US ● Air or water cooling
cost should eventually come down. prongs) will begin in the fall of 2014. ● Also as boost or buck converter
The adoption of GaN technology is expected Due to the sheer size of the overall external engineered by
to have an effect on the external power ac-dc power supply market it is an attractive
supply market over the next several years. opportunity for digital power supply manufac-
The California-based startup Transphorm turers and is projected to see considerable
has developed power electronics technology advancement over the next several years.
based on gallium nitride, a semiconductor
that wastes far less power than the silicon
Welcome to the House of Competence.
components used in conventional devices.
Not only are these electronics more efficient, www.darnell.com
+49 (0) 621/7 89 92-0®
www.bodospower.com December 2014 Bodo´s Phone
Power Systems
VARIS@gva-leistungselektronik.de
21
www.gva-leistungselektronik.de
TECHNOLOGY
CONTENTDRIVING MARKETS
eGaN® Technology:
Transforming the Future
By Alex Lidow Ph.D.; Efficient Power Conversation
KEY TAKE AWAYS Elon Musk, CEO of SpaceX, has set as his mission to reduce the cost
• Transformative technologies, like the eGaN® technology devel- of putting objects in space by a factor of 10. With eGaN technol-
oped by EPC, change entire industries. ogy applied to satellites we can reduce the size of the electronics,
• eGaN technology has resulted in devices 5-10 times better than eliminate the shielding required, and greatly improve the performance
silicon counterparts, enabling large new applications like envelope of the data communications. This eliminates solar panels, makes the
tracking and wireless power. And, this is just the beginning. eGaN entire system smaller and lighter weight, and extends the life of the
technology can be 1000 times better than silicon – changing the satellite.
game in several industries.
• eGaN technology will evolve from discrete transistors to single- A factor of two reduction in weight is within our reach with today’s
chip integrated circuits to complete systems-on-a-chip, significantly technology, whereas a factor of 10 is possible when eGaN technology
increasing performance and value-added to the market. is used to produce entire systems on a single chip. Multiply the impact
of SpaceX with eGaN technology and we will change the way we use
In Issues 4 and 5 of Technology Driving Markets, we discussed a few space and accelerate the exploration (and possible colonization?) of
applications enabled by eGaN technology: Envelope Tracking, Wire- our universe.
less Power, and LiDAR. Each of these will make a major difference to
the consumer in the next few years.
But this is just the beginning.

eGaN FETs today are only available as discrete transistors, with
performance a mere 5-to-10 times the best commercial silicon. What
happens when several devices are integrated to create a system on
a single chip, as we discussed in issue 6 of Technology Driving Mar-
kets? What happens when the performance of that chip is 100 times
better than silicon?
In this issue we will look out 5 to 10 years and see how a transfor-
mative change in semiconductor technology is transformative to our
world in almost every way.
Transforming the Machine Interface

LiDAR uses high speed pulsed lasers to rapidly create a three
dimensional image or map of a surrounding area. One of the earliest
adopters of this technology was the Google “driverless” car. Today’s
eGaN FETs are enabling new and broader applications such as 3D
printing, real-time motion detection for video gaming, computers that
respond to hand gestures as opposed to touch screens, and fully
autonomous vehicles. As eGaN technology evolves, LiDAR can be
further improved in both resolution and cost.
Projects are already underway to include “3D Awareness” in our cell

phones. Imagine if phones could understand the space around us.
We will be able to get directions in a new, more comprehensive way.
An iPhone today can provide the location of the building you desire,
but with LiDAR, 3-D mapping could lead you straight to a specific
Transforming Space office.
Power converters used in harsh environments, such as space, high-
altitude flight, or high-reliability military applications must be resistant Transforming the Use of Electricity
to damage or malfunctions caused by radiation. eGaN FETs today Wires suck. Today, we need wires to supply power to our ever-
perform 40 times better electrically while being able to withstand 10 growing collection of electrically powered gadgets. For those gadgets
times the radiation compared with the aging Rad Hard power MOS- that are so completely indispensable, we need to take them with us
FET. This enables entirely new architectures for satellite power and at all times, and they need batteries that must be recharged all-too-
data transmission. frequently.

TECHNOLOGY DRIVING
CONTENT
MARKETS
Expected in 2015, wireless power systems using eGaN technology leveraged to simplify
will begin to unload this wired burden by providing energy wirelessly sensor systems, to
to charge cell phones and tablets. By integrating thin transmission power medical implants
coils in the floor tiles and the walls of buildings and homes, the need and reduce electrical
for wall sockets will be eliminated altogether! This same wireless wiring in day-to-day care
power technology can be used to charge electric vehicles when of the patients.”
parked over a transmitting coil embedded in the floor of a garage.
But it’s not just eGaN
technology in wireless
power that is transform-
ing medicine. Imag-
ing technology is also
improving by leaps and
bounds! The resolu-
tion of MRI machines
is being enhanced
through the develop-
ment of smaller and
more efficient sensing coils using eGaN FETs and ICs. Diagnostic
colonoscopies are about to become a thing of the past due to today’s
eGaN FETs. These types of non-invasive imaging breakthroughs
significantly reduce the cost of health care through early warning and
non-invasive diagnostics. As we integrate entire systems on a single
eGaN chip, miniaturization and image resolution improves the stan-
dard of care while medical costs come down.
A project is underway to embed wireless chargers at bus stops. Even- eGaN Technology — Transforming the Future
tually, in a one-minute stop, a bus can get enough charge to drive In this issue of Fast Just Got Faster, we talked about a few of the
a mile to the next bus stop. This could eliminate the need for most transformations that will be enabled as eGaN technology evolves.
of the heavy batteries and overhead electrical systems that burden EPC is taking the 5-10 times gap in performance between eGaN FETs
electric buses today. and MOSFETs and improving it to a 1000 times gap. This technology
will also apply to integrated circuits made in eGaN technology.
Transforming Medicine
We are all getting older every day, and, as we age, we develop more EPC is pursing parallel paths – discrete power semiconductors and
opportunities for frailties and chronic health problems. Today there are (soon) fully integrated circuits that initially will form building blocks for
major advances in fields such as implantable systems, imaging, and multiple applications, but will ultimately evolve into complete systems-
prosthetics that are enabled by eGaN technology. on-a-chip for very high performance, low cost, and high value-added
applications like the ones discussed above.
Wireless power is already having an impact on implantable systems
such as heart pumps. Beyond just artificial hearts, many other medi- The eGaN journey has just begun!
cal systems can also benefit. As Dr. Pramod Bonde of the University
of Pittsburg Medical Center speculated, “[wireless power] can be www.epc-co.com
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COVER
CONTENT
STORY
Enhanced Trench IGBTs and

Field Charge Controlled Diode
The Next Leap in IGBT and Diode Performance
Future generations of IGBT modules will employ Enhanced Trench ET-IGBTs and Field Charge
Extraction FCE diodes capable of providing higher level of electrical performance in terms of
low losses, good controllability, high robustness and soft diode reverse recovery.
By Liutauras Storasta, Chiara Corvasce, Maxi Andenna, Sven Matthias,

Raffael Schnell and Munaf Rahimo, ABB semiconductors
Despite the fact that the Insulated Gate Bipolar Transistor (IGBT) demonstrated that soft recovery performance under extreme switch-
and antiparallel diode have experienced over the past two decades ing conditions combined with low losses could be achieved while
important breakthroughs with respect to the device process and having no drawbacks on other electrical parameters.
design concepts which resulted in clear leaps in device overall per-
formance, further development work is underway to achieve the next IC=75A, VDC=1800V, Lσ=2400nH, Tj=150 C
level in terms of higher power densities, improved controllability and 200
robustness. In this article, we will first briefly discuss the current IGBT
190
and diode development trends while focusing on the next genera-
tion technologies; namely the Enhanced Trench IGBT (ET-IGBT) and 180
Turn-off losses (mJ)
Field Charge Extraction (FCE) diode. Then, the new device concepts 170
and their electrical performance will be demonstrated for the 3.3 kV
160
voltage class.
150
IGBT and diode future development trends
140 ET-IGBT
The main three IGBT development trends today are targeting higher
EP-IGBT
power densities with (a) Enhanced Trench ET-IGBTs, (b) higher op- 130
erating temperatures above the traditional 125°C mark and (c) IGBT/ 120
Diode integration solutions referred to as Reverse Conducting RC- 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0
IGBT or Bi-mode Insulated Gate Transistor (BIGT). In the BIGT case, On-state voltage drop (V)
the single chip approach provides improved performance especially
Figure 1: 3.3kV IGBT trade-off curve between on-state voltage drop
with respect to the limitations due to the restriction in available diode Fig. 1. 3.3kV IGBT trade-off curve between on-state voltage drop and turn-off losses.
and turn-off losses. Comparison between the enhanced trench (ET)
area depending on the given application requirements. Nevertheless, Comparison between the enhanced trench (ET) and enhanced planar (EP) structures.
and enhanced planar (EP) structures
the traditional IGBT/Diode two chip approach remains as an important
development path for many mainstream applications. Today, state-of- The ET-IGBT concept
the-art high voltage devices with a similar loss performance employ The main approach followed for the realization of the ET-IGBT con-
Enhanced Planar IGBT (EP-IGBT) or Trench IGBT MOS cell concepts cept with the targeted enhanced carrier concentration near the trench
on Soft Punch Through (SPT) structures. However, for lower voltage emitter for lower losses is based on the introduction of a striped active
devices rated below 2 kV, in addition to trench IGBTs, advanced Trench MOS Cell with an n-enhancement layer. In order to reduce the
ET-IGBTs are already an established technology. Furthermore, the effective input capacitance for improved switching controllability, the
ET-IGBT concept is also capable of providing the next step in loss focus is on the optimization of the regions between the active cells,
reduction for high voltage IGBTs. Figure 1 demonstrates the on-state which contribute strongly to the device effective input capacitance
Vce(sat) loss reduction of a 3300 V IGBT for the same turn-off losses value during switching. By eliminating gate regions between the
Eoff achieved with the new ET-IGBT MOS cell on the same bulk SPT active cells as shown in the cross section in figure 2, we allow for a
platform. However, it is important to point out that the trench based low effective gate emitter input capacitance compared to state-of-the-
IGBTs, especially for higher voltage ratings, exhibit an inherently high N-source
effective gate input capacitance when compared to planar based
devices which results in less controllability for optimum switching
P
performance during IGBT turn-on. Overcoming this negative aspect n-enhancement
gate
gate
combined with the lower losses of the ET-IGBT will provide an ideal layer
solution for the next generation high voltage IGBTs.
For the fast diode part, the losses and reverse recovery softness
remain as a critical performance target for matching the performance
Figure 2: ET-IGBT MOS Cell concept
of the new ET-IGBTs. The Field Charge Extraction (FCE) concept Fig. 2: ET-IGBT MOS Cell concept.

COVER
CONTENT
STORY
art trench IGBT designs while providing optimum reverse blocking 3.3 kV ET-IGBT module prototypes
capability. The lower on-state losses of the 3.3 kV ET-IGBT provides 3.3 kV ET-IGBT and FCE-diode chips were manufactured with an ac-
potentially a 20% increase in the rated current capability compared to tive area of approximately 1 cm2 per chip with a defined rating of 75 A
the EP-IGBT generation. for the IGBT and 150 A for the diode. The chips were employed in a
standard high voltage insulated module (140 x 70) mm2 having a dual
configuration as shown in the inset of figure 4. Each IGBT/diode part
in the dual package consists of a single substrate containing 4 x ET-
IGBTs and 2 x FCE-diodes. The resulting current rating of the module
is 300 A compared to today’s 250 A for an equivalent EP-IGBT.
Nominal
T = 25°C
T = 150°C
ET-IGBT
200
Current (A)
EP-IGBT
100
0
0 1 2 3 4
Voltage (V)
Figure 4: 300A/3.3kV ET-IGBT module output I-V characteristics at
25°C and 150°C.
Fig. 4: 300A/3.3kV ET-IGBT module output I-V characteristics at 25 C and 150 C.
The modules were tested electrically under static and dynamic condi-
tions. Figure 4 shows the on-state characteristics for the ET-IGBT at
Figure 3: The combination of FCE and FSA concepts (a) and (b) 25°C and 150°C and compared to the EP-IGBT. The ET-IGBT module
cross sections, (c) doping profile exhibits much lower static losses compared to the EP-IGBT together
combination of FCE and FSA concepts (a) and (b) cross sections, with(c) doping
strong profile.
positive temperature coefficient for safe paralleling of
The FCE diode concept chips. At the rated current of 300 A, the ET-IGBT design has a Vce(sat)
For the new diode, a combination of the Field Charge Extraction of 2.75 V compared to 3.55 V for the EP-IGBT at 150°C.
(FCE) concept and the well-established Field Shielded Anode (FSA)
design is utilized as shown in figure 3 when compared to a conven- Figure 5 show the nominal turn-off and turn-on switching waveforms
tional design. The thickness of the n-base plays a key-role for the for both ET-IGBT and the reference EP-IGBT, respectively. The test
overall loss generation where low-loss diodes require a thin n-base conditions were kept the same to better evaluate the device perfor-
design. However, further reductions of the thickness of the n-base mance. The devices were switched against an applied DC-link voltage
region have been typically restricted by the snappy reverse recovery of 1800 V and a rated current of 300 A at 150°C with a gate emitter
behavior of the resulting diodes. By introducing small p-doped areas capacitance of 47 nF. The stray inductance was 600 nH and the turn-
at the cathode side of the diodes as shown in figure 3, a field-induced off gate resistance was 9Ω while the turn-on gate resistance varied
carrier injection process is enabled during the recovery phase, which per design as indicated. The turn-off losses Eoff of the ET-IGBT were
generates inherently soft diodes. Therefore, the n-base of a 3.3 kV at around 650mJ compared to 600 mJ for the EP-IGBT. However,
rated diode can be thinned by 10% while the blocking capability is larger variations were obtained for the turn-on losses Eon where the
maintained by increasing the
3000 3000 600
resistivity without compromis- 75
EP-IGBT
75 EP-IGBT (R =10) G
Current
ing soft reverse recovery. The 300
ET-IGBT
2500
ET-IGBT (R =18) G
60 60 2500 500
benefit of this approach is
a 20% improvement on the 45 Voltage 2000 45 2000 400
Voltage
Gate voltage (V)
Gate voltage (V)
Current
technology curve. Moreover,
Voltage (V)
Current (A)
30 200 1500 30
Current (A)
Voltage (V)
the robustness of these inher- 1500 300

Gate Gate
ently soft diodes has been 15
1000
15
1000 200
improved due to the absence 0 0
100 500
of large overshoot voltages 500 100
-15 -15
during reverse recovery. 0
-30 -30 0 0
0 -500
0 1 2 3 4 5 6 0 2 4 6 8
Time (s) Time (s)
Figure 5: 300A/3.3kV module Turn-off (left) and Turn-on (right) waveforms (1800V, 300A, 150°C).
Fig. 5: 300A/3.3kV module Turn-off (left) and Turn-on (right) waveforms (1800V, 300A, 150 C).

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COVER
CONTENT
STORY
ET-IGBT was at 860 mJ albeit with a different gate resistor compared ET-IGBT Turn-off and Short Circuit SOA Performance
to 910 mJ for the EP-IGBT. The total switching losses for all tested The turn-off (RBSOA) behavior was tested for two paralleled chips
devices were approximately at the same level just below 1.5 J. The under high current and voltage conditions. For the RBSOA, the ET-
FCE-diode reverse recovery performance can also be seen in the IGBT was tested against a high DC-link voltage of 2500 V and the
IGBT turn-on waveforms. The controllability of the ET-IGBT is illus- maximum achieved switchable current is approximately 5x and 4x the
trated in figure 6 when plotting the turn-on parameters (Icmax, Eon and nominal current at 25°C and 125°C, respectively as shown in figure 8.
di/dt) against the variation in the gate resistance. The device enters and withstands both stress conditions known as dy-
namic avalanche and Switching Self Clamping Mode SSCM at 25°C.
600
At a temperature of 125°C, the device experiences stronger dynamic
550 avalanche as expected due to the higher levels of carrier concentra-
tions which results in a lower but still sufficient turn-off capability.
IC max (A)
500
2040 Standard diode
450 FCE diode
Voltage (V)
1360
Average di/dt (A/s) Turn-on losses (mJ)
1500
EP-IGBT 680
1200 ET-IGBT
0
20
900 Current (A) 0
-20
600
-40
-60
600
-80
400 1.5 2.0 2.5 3.0 3.5

Time (s)
200 Figure 7: 300A/3.3kV module reverse recovery (1800V, 15A, 25°C).
5 10 15 20 25
Fig. 7: 300A/3.3kV module
The singlereverse recovery
chip ET-IGBT short(1800V, 15A,
circuit test 25carried
was C). out at 1800 V
Gate resistor ()
and 25°C and the resulting waveforms are shown in figure 8. At a
short circuit current level of around 300 A, a smooth and stable be-
Figure 6: Effect of varying the gate resistance on the turn-on param-
varying the gate resistance on the turn-on parameters (1800V, havior
300A, 150was C).obtained for pulse widths of at least 15 us.
eters (1800V, 300A, 150°C).
With the above SOA performance, it is encouraging that the improve-

ments achieved for lowering the on-state losses of the ET-IGBT have
The FCE diode softness was also tested under the same circuit setup not compromised the device robustness, which is strongly required
but at the critical softness conditions with a lower current of 15 A and especially when targeting higher power densities for the next genera-
a lower temperature of 25°C as shown in figure 7. The FCE diode tion HiPak and LinPak modules.
clearly shows very soft recovery performance under these extreme
conditions when compared to the standard diodes exhibiting a typical
current snap-off along with the associated high overshoot voltage. www.abb.com/semiconductors
4200 3000 750
25°C
900 3600
150°C 600
2400
750 3000
voltage 450
Voltage (V)
Current (A)
Voltage (V)
600 2400 1800

Current (A)
4×Inom
300
450 1800
current
1200
300 1200 150
150 600 600

0
0 0
0 -150
0 1 2 3 4 5 6 0 2 4 6 8 10 12 14 16 18
Time (s) Time (s)
Figure 8: 3300V ET-IGBT Turn-off RBSOA (2500V, Rg=33Ω, Ls=2400nH, Vge=20V)

and short circuit SOA
Fig. 8: (1800V,
3300V tsc=15us,
ET-IGBT Turn-offVge=15V, Rg=33Ω,
RBSOA (2500V, Ls=2400nH,
Rg=33Ω, T=25°C)
Ls=2400nH, waveforms
Vge=20V) and short circuit
SOA (1800V, tsc=15us, Vge=15V, Rg=33Ω, Ls=2400nH, T=25 C) waveforms
DESIGN
CONTENT
AND SIMULATION
LLC Resonant Converter

Simulation Using PLECS
Soft-switching capabilities of resonant converters allow for power supplies with smaller
packaging and higher power density. PLECS is a simulation tool developed for power
electronics engineers that offers very efficient and robust modeling of power supplies with
multi-physical domains and associated controls. In this study, a full-bridge LLC converter
with variable-frequency operation and multi-domain interactions is investigated.
By Munadir Ahmed, Plexim Inc., and Min Luo, Plexim GmbH
Introduction Operation of LLC converter and estimating switching losses
Efficient converters capable of delivering high power with a small foot- The LLC converter is often operated under zero-voltage switching
print have become a necessity for front-end isolated DC/DC convert- (ZVS) operation where the FETs (e.g., Q1) are turned on when the
ers in power supplies. Operating these converters at high switching current is still flowing in its anti-parallel diode (e.g., D1). Therefore,
frequencies enables engineers to reduce the size of the magnetic and only the forward voltage drop of the diode is applied to the FET,
capacitive components. With tight packaging, thermal management which is small compared to the DC input voltage. This results in
is an important design consideration to ensure the semiconductor negligible turn-on loss in the device and contributes to the reduction
devices are operated in the safe region. The LLC converter is an at- of overall losses. During ZVS operation, the FETs are turned off in a
tractive topology for such applications with its ability to soft-switch the region where they conduct current. This results in hard-switching of
semiconductor devices, reducing overall system losses. the devices, generating turn-off switching losses, as shown in Fig. 2.
PLECS is a multi-domain modeling platform for simulating power

electronic systems. In addition to using behavioral power semicon-
ductor models to achieve high simulation speed, the PLECS thermal
and magnetic domains assist with the design of LLC converters, and
facilitate component dimensioning and control parameter tuning. Also,
the high-fidelity MCU peripheral modules, discussed in [1], allow engi-
neers to easily implement variable-frequency PWM generators. In this
article the design of a full-bridge LLC converter with variable-frequen-
cy operation is discussed. Simulation results representing converter
operation under voltage control are provided. Thermal results confirm-
ing the safe operation of the semiconductor devices are also shown.
The PLECS magnetic domain allows engineers to size the converter
for a desired saturation point and verify the region of operation on the
B-H curve through simulation.
LLC resonant converter model in PLECS

Figure 2: Zero-voltage switching scheme
Figure 1 shows a full-bridge LLC resonant converter modeled in
PLECS. The AC-side of the full-bridge is connected to the primary
side of a high-frequency transformer via a series-connected inductor PLECS uses ideal switches to model the power semiconductors, and
and capacitor. The magnetizing inductance of the transformer, along switching losses are calculated using look-up tables. The data is input
with the inductor and capacitor, form the LLC resonant rank. The as energy loss as a function of blocking voltage, conducting current,
secondary side of the transformer is connected to a full-wave diode and junction temperature. During the soft-switching turn-on event,
rectifier to convert the AC transformer output to a high-ripple DC volt- zero switching losses are simulated, while the hard-switching turn-off
age that is then filtered to provide a low-ripple DC voltage output. switching losses are calculated from the circuit dynamics as a turn-off
energy impulse. The look-up table approach for simulating switching
losses was shown to have good correlation with hardware measure-
ments in [2].
During turn-off and turn-on events, the body capacitor of each FET
is charged and discharged, respectively. For circuits where the FETs
(not the reverse diode) experience hard-switching during turn-on, the
charge stored in the body capacitor is dissipated through the FET,
adding to the switching losses. These losses can be captured in
Figure 1: LLC resonant converter simulation (without adding a capacitor parallel to the FET) by simply

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DESIGN
CONTENT
AND SIMULATION
including them in the look-up tables for the losses. When measuring such as saturation. In the LLC resonant converter presented here, the
the switching energy losses of FETs for certain operation points to high-frequency transformer model is composed of two E-shape core
generate the loss look-up table, it is important to include the charge components with an air-gap on the middle leg, and three windings, as
stored in the FET body capacitor in the loss measurements. A major shown in Figure 3. The geometric parameters of the iron core in this
advantage of ZVS for FETs, in addition to eliminating turn-on losses, example are per the “E70/33/32” device specification from EPCOS,
is that the energy stored in the body capacitance is recycled into the while material parameters regarding the saturation effect come from
circuit [3], assuming there is enough blanking time between turn-off of the B-H curve in the ferrite N87 datasheet. The winding turns values
Q1/Q4 and turn-on of Q2/Q3. Therefore, in soft-switching topologies are chosen to achieve the expected magnetization inductance.
operated with ZVS, turn-off losses can be overestimated by 10 to 20
% [4], if the effects of the capacitive elements are not reflected in the Simulation results
loss look-up tables. A 200 VDC input is connected to the DC-side of the full-bridge. A slew
rate is applied to the converter to limit the rate of change in output
Variable-frequency modulation voltage during a change in the reference voltage. Additionally, a soft-
Frequently, to generate PWM signals in simulation, a duty cycle start algorithm is employed to limit the rate of change in commanded
value is compared against a fixed-frequency triangular waveform. voltage during startup. This is reflected on the startup transient as the
Such simplified models have inherent limitations in comparison to the output voltage incrementally ramps up. After the soft-start, a voltage
functionality provided by real MCU peripheral modules. As a result, controller is used to control the switching frequency of the full-bridge.
the system model fidelity is substantially reduced and effects critical The system reaches the desired 300 VDC output after 20 ms. The
to the power controls may be lost or inaccurately simulated. In [1] we thermal system has a smaller time constant, reaching steady state
discussed the efficient modeling of high-fidelity peripheral modules. A after 40 ms. Figure 4 shows the transient simulation of the LLC con-
characteristic of these models is the ability to operate the high-fidelity verter from startup.
PWM peripheral module with variable-frequency. The frequency and
duty cycle are provided as inputs to this peripheral module. These
inputs are sampled to update the PWM signal for the next switching
period. The user can dynamically update the frequency and duty cycle
in simulation, and therefore efficiently implement a variable-frequency
modulator, as is needed for an LLC converter.
Modeling of magnetic device

Conventionally for dynamic circuit simulation, the magnetic devices
are modeled directly in the electrical domain, in which magnetic cou-
pling between windings are realized either with mutual inductances
or ideal transformers and magnetizing inductances. However, the
electrical equivalent circuit bears little resemblance to the physical
structure of the magnetic component. For example, parallel flux paths
in the magnetic structure are modeled with series inductances in the
equivalent circuit. PLECS provides magnetic modeling capabilities
based on the permeance-capacitance approach [5], allowing the user
Figure 4: Startup transient simulation result for LLC converter
to build up a magnetic circuit to represent the iron core geometry and
windings allocation intuitively, as well as include nonlinear effects
Figure 5: Operating region of the saturable core
Figure 5 shows the operating points of the core on the B-H curve
during a transient simulation to steady state. Engineers can size their
Figure 3: High-frequency transformer model using saturable magnetic magnetic component using the saturable core component to operate
elements in PLECS the system at the desired point of the B-H curve.

DESIGN ANDCONTENT
SIMULATION
ZVS of the FETs allows the converter to be operated with reduced

switching losses, as the anti-parallel diode conducts the current when w w w. e l e c t r o n i c o n . c o m
the turn-on gating signal is applied. The FET starts to conduct as the
current direction becomes positive through the device. This results
in zero turn-on switching losses. The FET is turned off at an instant
when current is flowing through the device, resulting in hard-switching
and turn-off switching losses. Figure 6 shows the gating signal and
current of Q1. When the current is less than zero the anti-parallel
diode is conducting. Figure 6 also shows the switching energy losses.
There are no switching losses due to the soft-switching during turn-on
of Q1 but the 0.3 mJ energy impulses reflect the turn-off losses due to
hard-switching. The body capacitor’s energy storage is not included
in the look-up table for this model; therefore the turn-off loss yields a
maximum 20 % overestimate, as previously discussed.
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Figure 6: Steady-state waveforms showing current through Q1 and
D1, FET gating signal and switching losses
Conclusion  
The modeling and simulation of a resonant LLC converter has been
presented in this article. PLECS permits analysis of transient effects
from multiple physical domains in a single system model without
excessive simulation times. This provides an effective and accurate
means to investigate and address issues related to compact power
supply design. Further, high-fidelity peripheral models allow design-
ers to simulate the LLC under variable-frequency operation. Such
comprehensive models provide power electronic designers with more
insight into the system before hardware is built, leading to time and
cost savings.
www.plexim.com
Reference
[1] Prausse, F.; Ahmed, M., “Efficient Microcontroller Peripheral Modeling with
PLECS”, Bodo’s Power Systems, July 2014 Issue, pp. 34-37
[2] Munk-Nielsen, S.; Tutelea, L.N.; Jaeger, U., “Simulation with Ideal Switch
Models Combined with Measured Loss Data Provides a Good Estimate STANDARD OR SPECIAL – YOUR CHOICE
of Power Loss”, IEEE Industrial Application Conference, vol. 5, 2000, pp.
2915-2922
[3] Erickson, R.; Maksimovic, D., “Fundamentals of Power Electronics”, 2nd
Edition, Springer, 2001, Chapter 19
[4] “A More Realistic Characterization of Power MOSFET Output Capacitance
Coss”, International Rectifier Application Note, AN-1001
[5] Allmeling, J.; Hammer, W.; Schönberger, J., “Transient simulation of ELECTRONICON Kondensatoren GmbH · Keplerstrasse 2 · Germany - 07549 Gera
magnetic circuits using the permeance-capacitance analogy”, IEEE 13th Fon: +49 365 7346 100 · email: sales@electronicon.com · web: www.electronicon.com
Workshop on Control and Modeling for Power Electronics (COMPEL),
2012, pp.1-6

CONTENT
IGBTS
Kelvin Emitter Configuration

Further Improves Switching
Performance of
TRENCHSTOP™ 5 IGBTs
TO-247 4pin package with Kelvin emitter enables faster commutation, improving the
switching behavior of the 650V TRENCHSTOP™ 5 IGBTs. Dynamic losses are reduced by
20% in comparison to standard TO-247 package, thus increasing the overall system effi-
ciency and enabling the IGBTs to operate at lower temperature.
By Vladimir Scarpa and Fabio Brucchi, Infineon Technologies AG
Recent improvements in the IGBT technologies have reduced the CoolMOS™ C7 technology[1].
switching losses of the devices considerably. This has been achieved With the Kelvin emitter configuration, the switching speed is increased
through changes in the structure of the IGBT chip. Figure 1 presents further. Consequently, the switching losses are reduced in both
a comparison of switching energies of discrete 50A rated IGBTs from flanks, even if the same counterpart diode remains in use. As one of
different technologies. The IGBT and the co-packed diode technolo- the advantages, the adoption of the TO-247 4 increases the overall
gies are indicated at the bottom of Figure 1, as well as the year in system efficiency and allows the IGBT device to operate at lower
which they have been brought to the market. The energy has been temperature.
measured in a switching cell, using a device from the same family and
of identical current rating as counterpart. The Kelvin Emitter Configuration
In standard through-hole packages, as for instance TO-220 or TO-
A deeper look inside Figure 1 reveals how impressively the turn-off 247, each lead pad resembles a parasitic inductance. The inductance
energy of the IGBTs has decreased in the recent families. This has from the emitter pad in particular is a part of both, power and control
been achieved by decreasing the fall time of the current during turn- loops.
off, thus removing the tail current almost completely. The power loop also includes the parasitic inductances coming from
Switching Energy of 50A rated IGBTs in TO-247 @ ISW=25A, TC=25°C the collector lead and from the PCB tracks which connect the switch-
2 ing devices to the DC-link capacitor. The gate loop contains the induc-
tances coming from the gate lead and from the PCB tracks which con-
Switching Energy [mJ]
1.5 TO-247
0.67 mJ
=
TO-247 4pin
1
100% Eon
C
VDRV
0.92 mJ Collector
103%
0.5 = 98%
100% Eoﬀ 83%
30% PWM RG G Gate
20% 18%
0 Emitter
TRENCHSTOP™ / EC HighSpeed 3 / EC TRENCHSTOP™ 5 / TRENCHSTOP™ 5
Turn-On Losses
Diode Diode Rapid 1 Diode /Rapid 1 Diode
IG
Turn-Oﬀ Losses 2006 2010 2012 2014
Figure 1: Switching losses of 50A rated IGBT devices, switching C E E2 E1

1 E
conditions: IC=25A, Tj=25°C 2G
On the other hand, turn-on energy has practically not changed. One Figure 2: IGBT connection in Kelvin emitter configuration
of the main reasons for this is the fact that the turn-on behavior of the
IKZ50N65H5 - Etot
IGBT is strongly depending on the counterpart diode and its amount 10000
of reverse recovery charge. Actually, the amount of recovery charge Comp. F
8000
tends to increase when the diode is combined with a faster IGBT, thus 3pin
Etot [µJ]
6000 4pin
increasing the switch’s turn-on losses. 3pin
Configuration 4000
2000
To achieve a considerable reduction of turn-on losses, the TO-247
0
4pin package is now being introduced for devices of the TRENCH- E1
E2
0 25 50 75 100
STOP 5 family. This package contains an extra emitter pin to be IC(sw) [A]
connected exclusively to the control loop and has already been Figure 3: Total switching energy of an IKZ50N65EH5 in both, 3pin and
successfully used in combination with super junction MOSFETs from 4pin configurations

CONTENT
nect the gate and emitter pads to the gate The total switching losses measured in the
resistor and the gate driver. During transitory three tests is presented in Figure 3. The
conditions like the turn-on or turn-off of the advantage of the Kelvin emitter configuration
IGBT, the parasitic inductances will induce is more prominent for the highest currents.
Analyze Your
voltage drops that will make the effective These are the conditions where highest cur- Passive Components!
voltage over the device pins different from rent change rates are expected. Therefore,
the effective voltage over the die pads. the lead inductance will attenuate the gate
voltage the most in the 3pin configuration.
The voltage attenuation given by the emitter
lead inductance Le causes a reduction of the Figure 4 presents the difference in switching
effective gate to emitter voltage. It can be energy between the 3pin and 4pin configura-
quantified as the value of Le multiplied by the tions as a function of the switching current.
change rate di/dt of the emitter current. Due The benefit of the Kelvin emitter therefore
to this attenuation, the commutation time is can be quantified in absolute values so as in
extended, leading to higher switching losses. percentage to the standard 3pin configura-
tion.
The newly introduced TO-247 4 package has From Figure 4, it is possible to deduce that in
an extra connection to the IGBT’s emitter, applications where the current is higher than
labeled E2 in Figure 2. This point shall be the rated current of the IGBT, the switching
connected to the gate driver. Also known as loss reduction can be higher than 20%. This
Kelvin emitter terminal, this pin is not subject often is the case in Uninterruptable Power
to the attenuation coming from the power Supplies (UPS) and welding machines. For
loop. The current coming from the IGBT’s applications where the current is typically
collector is solely conducted by the power around half the IGBT’s current rating, like
emitter lead E1. for example photovoltaic inverters or switch
mode power supplies (SMPS), the benefit is
Another difference from the TO-247 4 pack- slightly lower, i.e up to 15% lower switching Easily measure impedance using
age is the pin-out, which is different from the losses. the Vector Network Analyzer
standard TO-247 3. Bode 100 in combination with
IC(sw) [A] Absolut
This is done to keep Relative impedance test fixtures for SMD
the creepage distance 5A 10A 20A 30A 50A 70A 100A and THT components.
between the high 0 0%
voltage pins. In addi- -500 -10% Measure impedance, leakage

ΔEtot [µJ]
tion, the pins which inductance, capacitance, ESR,

are connected to the -1000 -20%
resonance frequency and more
power loop, C and E1, -1500 20% lower @ INOM -30% from 1 Hz to 40 MHz.
are put side by side,
-2000 -40%
so are those for the 30% lower @ 2xINOM
control loop E2 and G. -2500 -50%
10 4
Figure 4: Switching energy reduction from 4pin configuration in both, 10 3

Electrical Switching
TR1/Ohm
absolute and relative values 10 2

Performance 10 1
Without the attenuation of the gate voltage Further information 10 0
coming from the power emitter, the switching For further hints on how to fully exploit the 10 -1
of the IGBT becomes faster than in the stan- advantages of the TO-247 4 package, please 101 102 103 104
f/Hz
105 106 107
TR1:°Mag(Impedance)
dard TO-247 package. To quantify the benefit refer to the dedicated application note [2]. 100
of the Kelvin emitter configuration during

50
turn-on, the IGBT IKZ50N65EH5 has been References
TR2/°
used as the device under test (DUT). It is a [1] Infineon Technologies AG: AN 2013-05, 0
50A rated IGBT from the TRENCHSTOP™ 5 “CoolMOS™ C7 650 V Switch in a Kelvin -50
family in a TO-247 4pin package. Source Configuration” -100

101 102 103 104 105 106 107
In the first set of tests, the emitter pins E1 [2] Infineon Technologies AG, Application f/Hz
TR2:°Phase(Impedance)
and E2 have been connected. The output Note “TRENCHSTOP™ 5 IGBT in a
of the gate driver has been connected to Kelvin Emitter Configuration”
pins G and E1. This emulates the standard
TO-247 package and is referred to as 3pin www.infineon.com
configuration. In the second set, pins E1 and
E2 have been connected as in Figure 2. This
is referred to as 4pin configuration. A device
available on the market with the same rated
current inside a standard TO-247 package
has been included for reference.
Smart Measurement Solutions®

141110_Impedance_third_handson.indd 1 2014-11-14 17:08:02

DIGITAL
CONTENT
POWER
Digital Power Comes of Age

This article looks at the evolution of distributed power architectures since the introduction
of the first high-frequency switching DC-DC converter modules back in 1984.
It describes the factors that have driven this evolution and highlights some of the most
significant innovations along the way.
By Mark Adams, CUI Inc; Patrick Le Fèvre, Ericsson Power Modules;
Steve Pimpis, Murata
We then consider advances in digital power in the last few years
and where power technology needs to take us if the growing power
demands of data networks and storage systems are to be met with
minimum environmental impact. Finally, we highlight the opportunities
for ‘competitive collaboration’ to drive innovation in the digital power
supply industry - the engineering benefits it brings to power systems
designers, the commercial benefits to companies that consume power
Figure 1: Early distributed power solutions adopted a two-stage con-
supplies, and the opportunity to mitigate the potentially negative
version with a typical intermediate bus voltage of -48V and a single
environmental impact of our growing demand for digital information in
output at 12V or 5V
all its forms.
Distributed power architectures now dominate in the design of power The larger the differential between the input and output voltage(s) of
systems for high performance datacom and telecom networks, and a DC-DC converter, the less efficient the conversion process. It soon
data center equipment. The change from centralized power - a simple became clear that for maximum system efficiency it is desirable to
AC-DC power supply, perhaps with battery backup, feeding the cards handle the last conversion very close to the load i.e. the processor,
in a system rack - came about by necessity. Semiconductor operating FPGA or other device. Power supplies used in this final conversion
voltages decreased as ever-smaller process nodes were developed are point of load (POL) converters. In addition to boosting efficiency,
to boost the processing power of ICs. The ICs became more powerful placing power converters as close as possible to their loads prevents
and their lower operating voltages meant that higher current was de- instability due to stray impedances in long PCB tracks or system
manded. Long printed circuit board tracks would mean unacceptable wiring. Datel, which was acquired by Murata as part of the Power
I2R losses, reducing power system efficiency, so distributed power Electronics Division of C&D Technologies in 2007, was an early
architecture became the norm. This trend is continuing. Since the pioneer of isolated DC-DC converters and POL modules during the
1980s the power demands of data centers have risen from 300W to 1980s and 1990s.
1200W per board and some forecast that it will reach 5kW by 2015 as
network IP traffic grows dramatically over the next few years. Distributed power architectures can be implemented in a number
of different ways, using regulated or unregulated bus voltages. As
The economics of creating distributed power systems were trans- systems became more complex, demanding a number of different
formed back in 1984 when a group within Sweden’s part of Ericsson voltages, perhaps 12, 5, 3.3, 2.5 and 1.2V, power system design-
AB, Ericsson Components – RIFA Power (later to become Ericsson ers began to adopt intermediate bus architectures (IBA) around 15
Power Modules) launched the PKA series of DC-DC converters. The years ago. Here, the AC-DC power supply feeds an IBA converter at
introduction of the PKA, described by Ericsson as ‘the world’s first perhaps 24V or -48V. The isolated IBA converter outputs 5 to 14V DC
high frequency DC-DC switching power supply’, meant that engineers and feeds the required number of POL converters.
no longer had to design relatively expensive and complex circuits
from discrete components. They could now use a compact board-
mounted module on each card, adding just a few external filtering and
decoupling components, to create much more efficient and effective
power systems. The use of power modules also delivered marked
improvements in system reliability. This was particularly important
for those designing communications networks, where the target for
operating life was sometimes 25 years or more.
Typically, the front-end AC-DC unit would have a -48V output and a
DC-DC power module on each card would convert this to 12V or 5V,
or a combination of both, to provide the correct operating voltage for
semiconductors in the system. 3.3V semiconductors then started to Figure 2: The proliferation of supply rails at the board level has re-
appear and today we’re down to 0.9V for many with some processors sulted in an intermediate bus architecture (IBA) that requires multiple
drawing up to 90A current at full load. POL converters on the system board

www.apec-conf.org
DIGITAL
CONTENT
POWER
Distributed goes digital More advanced than DVS, adaptive voltage scaling (AVS), adopts
The demand to provide sophisticated power management functions, a closed loop, real-time approach that adapts the supply voltage
including the sequencing of power supplies with controlled ramp rates precisely to the minimum required by the processor, depending on its
as required by large FPGAs, along with a desire to reduce board clock speed and workload. This technique also compensates auto-
space and the number of external components are the drivers that matically for process and temperature variations in the processor.
have led power system designers to increasingly turn to digital power
over the past decade. Key to this are the power management ICs Most switching power supplies use a closed control loop with negative
from companies like Texas Instruments, who introduced the industry’s feedback from output to input. A compensation network is needed
first digital signal processing (DSP) development kit specifically for to adjust the frequency response of the loop to achieve the optimum
power supply applications back in December 2002. transient response without compromising stability. The design of the
compensation network can be a time-consuming task involving con-
However it has been the development of off-the-shelf digital power siderable trial and error. Even then, the performance of the compo-
converter modules that has accelerated the adoption of digital power nents in the network can change with variations in temperature or due
in the last five years. The first of these came to the market in 2008 to ageing. In 2010, CUI Inc, a North American company, was the first
in the form of Ericsson’s BMR453 intermediate bus converter. Digital manufacturer to develop and launch non-isolated POL converter mod-
converters have much in common with their analog counterparts, ules featuring auto-compensation, a digital function that completely
including similar power switches and output filters. However, the inner eliminates this problem.
control loop provides digital flexibility for tailoring power delivery to
the application and enabling the power systems to dynamically adapt Using digital power modules also simplifies or enables many other
to changes in operating conditions in real time. Communications, aspects of power system design including active current sharing, volt-
monitoring and control are implemented over the industry-standard age sequencing and tracking, soft start and stop, and synchronization.
PMBus.
The drive for standardization
Digital control is particularly important in improving the efficiency of As DC-DC power modules have become more widely adopted, there
data network power systems. The power drawn by networking equip- has been a drive towards some level of standardization of products
ment increases with data throughput. At times of low data traffic, the from different manufacturers. Customers, concerned about supply
network is operating well below capacity, power supplies are operat- chain reliability, demanded second sources for products, leading to
ing well below their maximum load and processors can run at lower trade associations being formed by power supply and component
clock speeds. vendors to address this issue.
At low loads the power supplies are relatively inefficient, resulting Typically however, the alliances formed in this space succeeded in
in excessive energy consumption and waste heat generation, with little more than agreeing to standard footprints and pin-outs for certain
undesirable technical, financial and environmental consequences. By categories of power converter, such as non-isolated and isolated
implementing a digital control loop encompassing both intermediate DC-DC converter modules. While this has enabled a degree of inter-
bus and POL converters, the intermediate bus voltage can be varied changeability between products from different manufacturers, there
dynamically in response to varying loads. The input voltage to the has not been full consensus with respect to how all of the electrical
POL converters is reduced under low load conditions, which increas- functions of converters are implemented, making it less than straight-
es conversion efficiency at low loads. forward to swap out one product for another. This is particularly true
for digital power, which adds another layer of complexity to the chal-
lenge of ensuring compatibility between solutions.
More significantly, in 2004, Artesyn Technologies, Astec Power, and

a group of semiconductor suppliers: Texas Instruments, Volterra
Semiconductors, Microchip Technology, Summit Microelectronics,
and Zilker Labs, formed a coalition to develop an open standard for
a communications with a protocol dedicated to power systems. This
was the birth of the industry standard for power subsystem manage-
ment known as PMBus.
Not all has been ‘plain sailing’ and despite good intentions and a num-
ber of positive moves, there were issues that stalled developments
by other manufacturers. Most notable was the patent infringement
lawsuit issued by Power One in 2005 to protect the Z-Bus technol-
ogy used in its POL regulator ICS for monitoring and controlling
Figure 3: Digital power is particularly effective for improving efficiency power supplies. This held back the widespread adoption of PMBus
under low-load conditions SOURCE - Ericsson (EGG October 2014) for around four years, until the use of licensing royalty agreements
became routine for such technology.
Some digital power devices offer a dynamic voltage scaling (DVS)
function to save energy. If the demand for computing power is low, Most recently power supply companies have been coming together
both the clock frequency of the processor and its supply voltage can once again to address these issues, particularly the more challenging
be reduced. DVS is usually implemented as an open-loop function requirements of digital power. In July 2011, CUI announced a coop-
with a look-up table holding pre-determined combinations of frequen- erative agreement with Ericsson Power Modules and in September
cy and supply voltage. that year demonstrated a new family of POL modules that are pin and

DIGITAL
CONTENT
POWER
function compatible with Ericsson’s BMR46X series of converters. A To this end, CUI, Ericsson Power Modules and Murata, founded the
year later, CUI entered into a license agreement with Ericsson for the Architects of Modern Power (AMP) Consortium in October 2014. The
latter’s 3E Advanced Bus Converter family, allowing it to offer custom- goals of the Group go far beyond the ambitions or achievements of
ers an intelligent intermediate bus converter to pair with its portfolio established trade associations in the power industry. AMP Group will
of POL products. The companies agreed at that time to cooperate be characterized by deep collaboration between the firms in develop-
on a common standard for digital intermediate bus converters going ing leading-edge digital power technology, in terms of both functional-
forward. In July 2014, Murata and Ericsson announced a technical ity and efficiency. Common standards will encompass mechanical,
collaboration agreement with the goal of accelerating the adoption of electrical, communications, monitoring and control specifications.
digital power products by offering customers fully compatible products Members will focus on developing products that deliver high efficiency
from each company. power conversion under all operating conditions and provide supply
chain security to customers through true plug-and-play compatibility
Meeting future needs between their products.
According to the Ericsson Mobility Report, annual IP traffic will reach
7.7 zettabytes by the end of 2017, up from 2.6 zettabytes in 2012.
Video communications, cloud-based services and the interconnection www.ampgroup.com
of physical objects, dubbed the Internet of Things (IoT), are the pri-
mary drivers of this unstoppable growth. This will place even greater www.cui.com
demands on data network power system designers and fully exploit-
ing the functional and efficiency benefits provided by digital power www.ericsson.com
devices is the only way that they will be able to rise to the challenge.
Furthermore, the technology that started in datacoms and telecoms www.power.murata.com
is proliferating into other industries and applications as advanced
processors and FPGAs become commonplace, such as in medical,
industrial, and test/measurement equipment. This is creating the need
for a simple, intuitive, multisource solution across the board. The chal-
lenge is to achieve “perfect power conversion, under all conditions, all
of the time”. Hence there is pressure on power supply manufacturers
to accelerate their rate of innovation to the extent that much deeper
collaboration will be needed.
PROGRAMMABLE DC POWER
Magna-Power’s high frequency IGBT-based programmable DC power supply line spans 1.5 kW to 2000 kW+
with hundreds of models to target a variety of different applications.
Using a Magna-Power supply is as simple or sophisticated as the application demands with front panel control, 37-pin
isolated analog-digital I/O and a computer interface. Remote programming is supported through a variety of development
environments by a provided National Instruments LabVIEW™ driver, IVI driver and SCPI command set over RS232,
TCP/IP Ethernet, IEEE-488 GPIB and USB.
Designed and manufactured in the USA. Available worldwide.
www.magna-power.com
SL Series XR Series TS Series MS Series MT Series

Power Levels 1.5 kW, 2.6 kW, 4 kW 2 kW, 4 kW, 6 kW, 8 kW, 10 kW 5 kW to 45 kW 30 kW, 45 kW, 60 kW, 75 kW 100 kW to 2,000 kW+
Package 1U Rack-mount 2U Rack-mount 3U to 9U Rack-mount Floor Standing Floor Standing
No. of Models 54 70 80 80 65
Voltage Range 0-5 Vdc to 0-1,000 Vdc 0-5 Vdc to 0-10,000 Vdc 0-5 Vdc to 0-4,000 Vdc 0-5 Vdc to 0-4,000 Vdc 0-16 Vdc to 0-4,000 Vdc
Current Range 0-1.5 Adc to 0-250 Adc 0-0.2 Adc to 0-600 Adc 0-1.2 Adc to 0-2,700 Adc 0-7.2 Adc to 0-4,500 Adc 0-24 Adc to 0-24,000 Adc

POWER
CONTENT
MANAGEMENT
Tiny Power Components

for Wireless Charging,
Step Down Conversion and
“Always On” Devices
Texas Instruments used electronica 2014 in Munich to showcase its broad portfolio of new
products corresponding to the slogan coming from the Jack Kilby Day “TI technology is
fundamentally changing the way we live our lifes – from wireless charging to autonomous
vehicles, from smart cities and factories of the future to concussion sensors and bionic
eyes”. And power is needed in all of these areas- therefore this article describes the news
in power management presented at the exhibition.
By Wolfgang Patelay, Freelance Journalist Bodo’s Power Systems
Delivering power management innovation for ultra-low power designs,

Texas Instruments introduced the industry’s smallest, lowest power
linear battery charger and a tiny, fully integrated DC/DC power
module, which consumes only 360nA of quiescent current, to help
extend battery run-time in wearable electronics, remote sensors
and MSP430 microcontroller-based applications. The new bq25100
single-cell Li-Ion charger comes in a 0.9-mm by 1.6-mm WCSP
package, and achieves a solution half the size of existing charger
solutions. The device supports input voltages up to 30 V, and allows
accurate control of fast-charge currents as low as 10mA or as high as
250mA, and precise charge termination down to 1mA to support tiny
Li-Ion coin batteries. It also can support a leakage current of less than
75nA to extend standby operation. Designers also can add wireless
charging capability to small portable and wearable applications by
pairing the bq51003 2.5-W, Qi-compliant wireless charging receiver
with the bq25100 linear charger on the same board. The bq51003
is an advanced, integrated, receiver IC for wireless power transfer
in portable applications. The device provides the AC/DC power
conversion while integrating the digital control required complying
Figure 1: The bq25100 is targeted for ultra low-power designs
with the Qi v1.1 communication protocol. Together with the bq500210
transmitter controller, the bq51003 enables a complete contact-less
power transfer system for a wireless power supply solution. By using Both devices are featured on the new design reference board TIDA-
near-field inductive power transfer, the receiver coil embedded in the 00318 which is suitable for low power wearable device including a Qi
portable device receives the power transmitted by the transmitter compliant wireless receiver (bq51003) and ultra low current 1 cell Li-
coil via mutually coupled inductors. The AC signal from the receiver ion linear charger (bq25100). It features an ultra small size (5x15mm²)
coil is then rectified and regulated to be used as a power supply for capable of low charging currents down to 10mA and up to 250mA
down-system electronics. Global feedback is established from the with support of termination currents as low as 1mA. Current design is
secondary to the transmitter in order to stabilize the power transfer designed for 135mA charge current application.
process via back-scatter modulation. This feedback is established
by using the Qi v1.1 communication protocol supporting up to 2.5W Step-down converter modules
applications. The device integrates a low-impedance full synchronous The new TPS82740A und TPS82740B step-down converter modules
rectifier, low-dropout regulator, digital control, and accurate voltage support 200mA output current with 95 percent conversion efficiency
and current loops. and consume only 360nA of quiescent current during active operation
and 70nA during standby. The tiny modules rely on a fully integrated,
9-bump MicroSiP package, which incorporates a switching regulator,
inductor and input/output capacitors to achieve a solution size of only

International Exhibition and Conference
for Power Electronics, Intelligent Motion,
Renewable Energy and Energy Management
Nuremberg, 19 – 21 May 2015
Power meets electronics –

Join the PCIM Europe!
Your market place for power electronics
More information at +49 711 61946-0

pcim@mesago.com or pcim-europe.com
POWER
CONTENT
MANAGEMENT
6.7mm2. The TPS82740 is according to TI the industry’s first step for controlled start up of the power stage which minimizes the stress
down converter module featuring typically 360nA quiescent current on the power-stage components.
consumption. This new DCS-Control based device extends the light
load efficiency range below 10µA load currents. It supports output The circuit integrates a 700-V MOSFET, start-up current source and
currents up to 200mA. The device operates from rechargeable Li-Ion internal current sensing in a tiny 7-pin SO package size of 29.4mm2.
batteries, Li-primary battery chemistries such as Li-SOCl2, Li-MnO2 Additionally, no external compensation is needed which further
and two or three cell alkaline batteries. The input voltage range up reduces component count and board space. High-voltage pins are
to 5.5V also allows operation from an USB port and thin-film solar segregated to one side of the package, which maximizes separation
modules. The output voltage is user selectable by three voltage select between low and high voltage pins. Along with current limit func-
pins (VSEL), within a range from 1.8V to 2.5V (TPS82740A) and tion, the controller inductor current runaway protection helps protect
2.6V to 3.3V (TPS82740B) in 100mV steps. The TPS82740 features against under load short-circuit conditions to ensure design reliability.
low output voltage ripple and low noise. Once the battery voltage The device provides over-temperature protection with hysteretic
comes close to the output voltage (close to 100% duty cycle), the re-start for safe operation. The high voltage switcher reduces system
device enters no ripple 100% mode operation preventing an increase cost and minimizes the overall size of the power supply, while main-
of output voltage ripple. In this case the device stops switching and taining high efficiency and system performance.
the output is connected to the input voltage. The integrated slew rate
controlled load switch with a typical ON-resistance of 0.6Ù distributes An offline AC/DC reference design PMP8550 based on the
the selected output voltage to a temporarily used sub-system. UCC28880 enables designers to quickly design a low-cost, low-power
non-isolated high-side buck converter with a total solution size of
Energy savings to “always-on” smart meters 38mm by 32mm by 22mm that supports13V, while generating up to
Hundreds of millions of smart meters around the world continu- 100mA of output current. The reference design features a buck con-
ously draw power from the grid to measure energy use and provide verter with integrated switch and can be used in numerous industrial
feedback to the utility. Even though meters consume relatively applications. The design’s schematic, CAD files and test results are
small amounts of power that is not charged to the customer, when available for download. The reference design uses the UCC28880 low
you multiply the amount of energy needed to power the devices, it power, low cost, off-line buck converter with integrated 700V MOSFET
makes sense to minimize the energy consumed. Therefore Texas to generate a non-isolated 13V/120mA output from a universal AC line
Instruments is expanding its portfolio of high-voltage power solu- input. Thanks to its hysteretic mode, no loop compensation is needed
tions for offline AC/DC designs and introduced a 700V switcher with reducing BOM count to 23 components producing a small single
the industry’s lowest quiescent current of less than 100µA – half the sided, double layer board which can be used in numerous industrial
power consumption of existing solutions. The UCC28880 controller applications such as smart meters, home automation equipment and
integrates a 700V power MOSFET and high-voltage current source, white goods.
increasing overall energy efficiency of “always-on” non-isolated power
systems with output currents up to 100mA, such as smart meters, New family of 36-V and 60-V converters
home automation equipment and white goods. The controller inte- Also introduced were seven Simple Switcher regulators that simplify
grates the controller and a 700-V power MOSFET into one monolithic wide VIN synchronous power supply design and help engineers
device. The device also integrates a high-voltage current source, en- create energy-efficient, electromagnetic interference (EMI) compliant
abling start up and operation directly from the rectified mains voltage. products. The easy-to-use LM43600/1/2/3 and LM46000/1/2 DC/DC
The low quiescent current of the device enables excellent efficiency. converters feature an input voltage range of up to 60 V for high reli-
With the UCC28880 the most common converter topologies, such as ability in rugged systems, and 27mA of standby current that minimizes
buck, buck-boost and flyback can be built using a minimum number of power consumption at light load. The unique synchronous power
external components. The UCC28880 incorporates a soft-start feature stage architecture reduces radiated emissions for EMC compliance
Figure 2: The UCC28880 high-voltage switcher delivers energy sav- Figure 3: Simple Switcher DC/DC regulators enable quickly design
ings to “always-on” smart meters and home automation designs energy-efficient, EMI-compliant systems

CONTENT
InDUR
v
by STS
in a variety of industrial, automotive and communications applica-

tions. Synchronous rectification with integrated high-side and low-side Follow the trend
MOSFETs simplifies design while improving efficiency, EMI and solu-
tion size. Programmable switching frequency up to 2.2 MHz allows for
smaller external components.
The LM43600, LM43601, LM43602 and LM43603 synchronous regu-

lators support an input voltage range from 3.5V to 36V and gener-
ate output currents of up to 0.5A, 1A, 2A and 3A, respectively. The
LM46000, LM46001 and LM46002 support an input of 3.5V to 60V
and output currents of up to 0.5A, 1A and 2A. The converters inte-
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http:// members.aon.at/aseibt

TECHNOLOGY
CONTENT
Active Vibration Control in

Ultrasonic Wire Bonding
Improving Bondability on Demanding Surfaces
Ultrasonic wire bonding is an established technology for connecting the electrodes
of microelectronic devices as well as power electronic modules.
Bonding on demanding surfaces like connector pins embedded in plastic frames can
challenging. A new approach for surpressing unwanted vertical vibrations by an active
vibration control can improve bondability
By Dr.-Ing. Michael Brökelmann, Hesse GmbH
Introduction The aim of this study is to show the capability to suppress or at least
Typically an aluminium wire connects the electrodes of a power semi- reduce unwanted vertical vibrations during operation by the use
conductor with the corresponding electrodes of a substrate. The wire of special control actuators and a proper vibration control method.
is bonded to the electrode surface by an ultrasonic friction Reducing process variance and increasing bonding stability and
welding process. reliability are adjacent objectives. This research was done within the
large-scale integrating project HIPER-ACT (Novel technology for
Due to the very high requirements concerning quality and reliability high-performance piezoelectric actuators), funded by the European
of the electric connections, a very precise control of the process is Community’s Seventh Framework Programme FP7/2007-2013 under
required. Continuously increasing machine speeds intensify this de- grant agreement n° 212394 (hiperact.org). Within this project a new
mand. Another challenge is bonding on demanding surfaces, like slim technology for piezo-actuators with InterDigitated Electrode Technol-
connector pins embedded in plastic frames, other soft underlayers like ogy (IDE) has been developed. These piezo-actuators were used in
overhanging (stacked) dies, or poorly supported lead frames. the technology demonstrator for vibration damping in ultrasonic bond-
ing (see. Figure 1).
Objective
The ultrasonic transducer is a key component of a wire bonding
machine. It generates the power for the bonding process in the form
of mechanical vibrations in the ultrasonic frequency range. It is driven
in a longitudinal eigenmode, which due to the asymmetric mounting
of the bonding tool is typically not perfectly symmetric and shows
residual vibrations orthogonal to the main bonding direction. Beside
this eigenmode additional orthogonal vibration modes exist as well
as eigenmodes of the substrate or the bond pad base. In conjunc-
Figure 2: Principal of operation for control actuators
tion with the nonlinear process dynamics this can lead to fluctuating
normal forces in the friction contact and a disturbance of the bonding Approach
process. A novel prototype transducer is developed, which is capable of sup-
pressing orthogonal vibrations using additional piezoelectric control
actuators. It is required that these actuators do not influence the main
longitudinal vibrations, but only act on the orthogonal vibrations. This
is achieved by using a special configuration of the control actua-
tors. Two of these are mounted on the top and bottom sides of the
transducer body. The polarisation of the control actuators is chosen
like depicted in Figure 2. In free longitudinal vibration the electri-
cal charges on the electrodes of the top and the bottom actuator
Figure 1a/b: New IDE Actuator mounted on an ultrasonic transducer cancel each other out (Figure 2 left: V1+V2=0). In bending vibration
one piezoelectric ceramic is ‘stretched’ while the other ceramic is
Another aspect is important for copper wire bonding, a technology ‘compressed’. Because of the opposite polarisation the full piezoelec-
presently becoming more and more important. Because copper wire tric effect can be used in this case (Figure 2 right: V1=V2). Therefore
needs higher bond forces and vibration amplitudes the risk of damag- applying a voltage to the control actuators induces a pure bending or
ing the chip or underlayers is increased compared to aluminium bond- vertical movement of the transducer body without effecting the main
ing. Therefore supplying perfectly horizontal ultrasonic vibrations and longitudinal vibration. By this means an optimal coupling is achieved
reducing vertical vibrations is desired. for the orthogonal bending mode while the coupling to the longitudinal
mode is zero.

TECHNOLOGY
CONTENT
Active and passive vibration control techniques system behaviour was measured again. The correlation between
Within the first part of this project a proof of concept demonstrator has calculated and measured characteristics is very good. The predicted
been built. This includes the evaluation of different vibration damping “total” compensation was validated with a maximum reduction of the
techniques – a piezoelectric shunt damping technique and an active vertical vibrations of more than two decades (s. Figure 3).
open-loop control. To investigate and set up these techniques a suit-
able model is essential. Therefore the ultrasonic transducer has been For the passive vibration damping technique, a passive inductance-
described by a finite element model, which can be used to calculate resistance (LR)-circuit is connected to the electrodes of the piezo-
the dynamic vibration behaviour of the transducer. The FE-model has ceramics, in simulations as well as on the prototype. This passive
been validated by frequency response measurements. Additionally a damping technique does not require external power and is inherently
modal reduction of the finite element model to the two most relevant stable. For proper operation the network parameters must be tuned
eigenmodes is made. The system is then described by a model with precisely. Measurements of the free vibrations and of the frequency
two degrees of freedom (2-DOF model) which can describe longitudi- response showed a strong damping effect and a decrease of the verti-
nal and bending motions. This model is essential to calculate the op- cal vibrations by a factor of more than 10. However, a total suppres-
timal parameters for both the active vibration control and the passive sion is not possible with this technique.
damping technique. These investigations and the model equations
are reported in detail in [1] and [2]. To study the active vibration control technique, initial experiments
were conducted without wire. In this case, other than in the bonding
process, there is a steady friction contact at the tool tip.
Figure 4 shows that the active control can reduce the basic harmonic
completely in this case. But the investigations also revealed that
because of the nonlinear friction force characteristic higher harmonics
of quite low amplitude remain.
Full scale bonding test

In order to perform a full scale bonding test, a bonding machine was
equipped with a two channel ultrasonic driving system and two power
amplifiers as well as a special software to control both channels. It
was proven that both proposed damping techniques – shunt damping
and active vibration control – are capable to improve the vibration
behaviour during bonding significantly, especially in difficult circum-
Figure 3: Active vibration compensation of free vertical tool vibrations
stances, e.g. on poorly supported surfaces.
For the active open-loop control the optimal voltage amplification and
phase shift with reference to the driving actuators are calculated using
the 2-DOF model. With these parameters the vertical vibrations at
the tool tip should be fully compensated. This was proven experimen-
tally for the free vibration steady state. Figure 3 shows the frequency
response characteristics for the vertical vibrations of the tool tip mea-
sured via laser doppler vibrometry. In this example a parasitic mode
exists beside the main mode. The optimal control parameters for this
specific frequency (norm. frequency 1.006) were calculated and the
Figure 5: Measuring vertical vibrations below the bonding spot by

laser
Figure 5 shows a test specimen in which an aluminium plate was

intentionally mounted so that the bonding area was overhanging and
not supported in order to make the bonding process especially prone
to vertical vibrations.
The passive shunt damping technique with a tuned LR-network shows

a significant damping effect and reduces the vibration amplitude by
about 50%. But its frequency bandwidth is quite small, which means
that the optimal inductance value must be met quite accurately. Pos-
sible frequency changes during operation due to temperature and
Figure 4: Active vibration compensation with friction contact of the tool power dependency of system parameters have to be considered. The

o-f.de
CONTENT
VARIS™ XT –
advantages of the passive shunt damping technique are its simplicity and inherent stability. No
additional hard- or software is necessary. But its lower damping performance and the sensitivity
compact
and
towards parameter deviations are limiting its application.
The very profound advantage of the active feed-forward vibration control strategy is its possibility
powerful
to realize an almost complete suppression of orthogonal vibrations at any desired operating fre-
Figure 6: Full scale bonding tests of the active vibration control method, compensation of vertical
tool vibrations at bonding start (opt. phase 80°, left) and at bonding end (opt. phase 10°, right)
quency. But for this considerable more control effort and a high voltage supply for the control ac-
tuators are necessary. It was found that because of the nonlinear time-varying bonding process
the optimal control settings are not fixed, but a function of the process and thus time-varying.
As depicted in Figure 6, especially the phase angle has to be adapted to gain full compensation
during the entire bonding process. A vertical vibration sensor, e.g. integrated into the control ac-
tuators, can enable the set-up of a closed loop control in order to suppress the vertical vibrations
in any case.
An additional promising observation during the test was a reduction in the standard deviation
of the measured signals. With active vibration control the natural fluctuations of the process
seemed to be decreased. Further studies and tests have to confirm this.
Conclusions
The passive vibration damping system can be incorporated with low effort into a serial machine,
leading to a reduction of vertical vibration of about 50%. With an active vibration damping
system an almost complete compensation of vertical vibration is possible. For this an additional
sensor has to be incorporated and a closed loop control is necessary. For applications with ex-
tended demands this extra effort could be reasonable and such a system could be implemented
in future machines to reach optimal performance.
Literature References
[1] Brökelmann, M.; Neubauer, M.; Schwarzendahl, S. M.; Hesse, H.-J., Wallaschek, J., “Active
and Passive Vibration Control of Ultrasonic Bonding Transducers”, Proceedings of ACTUA- ● Six freely interconnected
TOR 2012, 13th International Conference on New Actuators, Bremen, Germany, 18-20 June IGBT half bridge modules
2012. ● Approx. 2 MW inverter output
[2] Neubauer, M.; Brökelmann, M.; Schwarzendahl, S. M.; Hesse, H.-J., Wallaschek, J., “Optimi-
power
zation of bond transducer vibrations using active and semi-active control”, Proceedings of
SPIE Vol. 8341, Active and Passive Smart Structures and Integrated Systems, 2012. ● Interface board for control,
feedback and sensors
http://www.hesse-mechatronics.com/ engineered by
+49 (0) 621/7 89 92-0®

www.bodospower.com December 2014 Bodo´sPhone
Power Systems
VARIS@gva-leistungselektronik.de
47
www.gva-leistungselektronik.de
TESTCONTENT
AND MEASUREMENT
Automated Acoustic Inspection

for IGBT Modules
High-power IGBT modules have long needed a non-destructive method to inspect for
internal structural defects such as voids, non-bonds, delaminations and cracks. The best
time for such inspection is after assembly but before encapsulation, which prevents re-
work. X-ray won’t find all of these defects, but the ultrasound of acoustic micro imaging
systems will.
By Tom Adams, consultant, Sonoscan, Inc.
For a long while IGBT modules could not be inspected by acoustic boards, and are upside down. Because the system is automated, the
systems, because of the water that couples the scanning ultrasonic operator need only put the stack of modules to be inspected in place
transducer to the module. Module makers feared that even the slight- and activate the software recipe for inspecting this type of module. No
est residue left after the water had evaporated could turn into leakage human attention is needed from this point on.
paths at the high power levels involved.
An automated mechanical system loads two IGBT modules onto their
Two years ago Sonoscan solved this problem for laboratory acoustic respective stages and the scanning process begins. In some systems
systems by inverting the transducer and placing it underneath the already in use, the only depth of interest in the modules is the solder
IGBT module, where it can scan the bottom surface of the heat sink. layer binding the heat sink to the ceramic rafts above the heat sink.
Along with the transducer came an upward-pumping water jet to The targets here are voids, non-bonds, delaminations and cracks -
maintain a constant column of water between the transducer and the important because these defects will block heat from reaching the
bottom surface of the heat sink just above it. The design of the system heat sink and being dissipated from the module. The result could be
made it impossible for water to reach the exposed power die and overheating and failure of the module.
circuitry at the top of the module.
During scanning the transducer sends thousands of pulses of ultra-
System designers have now taken this concept to its logical next step sound per second through the water column and into the surface
by putting together the first automated acoustic system (patents pend- of the heat sink. Each of the thousands of x-y coordinates where
ing) for inspecting IGBT modules. Like other acoustic microscopes ultrasound is pulsed each second will be represented in the acoustic
designed for the production environment, this automated system can image by a pixel whose color identifies the intensity of the echo. Ultra-
achieve higher throughput than a laboratory system because of supe- sound is reflected by material interfaces, and well bonded interfaces
rior handling of the parts - in this case, IGBT modules. between production materials typically reflect some portion of the
pulse and transmit the rest across the interface. The reflected portion
- the echo - is typically of moderate amplitude and will create a pixel
that is some shade of gray. A material interface that is uniformly gray
in an acoustic image is what an engineer typically wants to see.
What he does not want to see is a bright red feature, where the color
red indicates that >99.99% of the ultrasonic pulse has been reflected
as an echo. In a monochromatic acoustic image, these highest-ampli-
tude echoes are bright white; they are often pseudocolored bright red
Figure 1: With doors open, the two IGBT modules are seen.
The scanning transducers are out of sight beneath the modules.
Unlike laboratory systems, the automated system can be provided

with automated loaders and unloaders to handle the IGBT modules.
This means that it can be integrated directly into the production
line. Modules to be inspected are stacked at one end of the system,
which has two stages and two transducers to achieve higher overall Figure 2: In this acoustic image, gray regions identify two ceramic
throughput. In Figure 1 modules are masked to preserve the identity rafts; red features in these regions are voids, non-bonds, delamina-
of the manufacturer. The transducers that one would expect to see tions or cracks in the solder layer.
just above the two PCBs are out of sight, one beneath each of the

TEST AND MEASUREMENT
CONTENT
(as here) for greater visibility. This type of echo is characteristic of the the solder lies directly between it and the transducer, but a module
interface between a solid production material and a gas such as air, that has such a problem is very likely already a reject.
or a vacuum. The vast difference in material properties of air and, say,
copper causes the essentially total reflection of ultrasound.
This is what is seen in Figure 2, a segment of the acoustic image of a

fairly large IGBT module. The gray square features are the acous-
tic image of the interface between the solder and two ceramic rafts
below. The ultrasound was pulsed through the heat sink; heat sinks
themselves are typically lacking internal features. The red features
within the gray squares are areas where solder is either missing or
not bonded to an adjacent surface.
The data that is collected during scanning is analyzed immediately. Figure 3: Made during the same scan as Figure 2, this image shows
The system’s Digital Image Analysis™ (DIA) software will measure small red die attach voids at the largest of the three die.
the total area of the voids in the solder above each ceramic raft. The
accept/reject criteria, defined by the user, may call for a module to be The acoustic image in Figure 3 covers the same area as Figure 2, but
rejected if the total area of voids is, for example, >2% of the area of was gated on the fifth of six depths within the IGBT module. The red
the raft. Criteria may also take into account the x-y location of a defect defects seen in Figure 2 are here seen as black features because the
- a void that is not directly under a die is not as serious as one that is. ultrasound returning from the fifth depth is blocked by these voids.
At the end of the scanning process, accept modules are stacked in Thus the three-pronged void in the center of the left portion of Figure
front of the system, while rejects are stacked at the back. The acous- 2 is black in Figure 3. The depth that Figure 3 is gated on includes
tic data and images may be stored locally, in the system’s computer, the interface between the ceramic raft and the die attach material.
or in the user’s Factory Information System. The small red features within the area of each die are voids in the die
attach.
The inspection process is thus carried out rapidly and with minimal
human intervention. A technician will later examine the images of the One benefit of gating, and especially of setting rather narrow gates, is
reject modules to see which ones are candidates for rework, but no that the tilting of ceramic rafts becomes more visible. If one region of
one needs to examine the images of the good modules. a raft is actually displaying part of the solder layer, part of the die at-
tach, then the raft is tilted and is a potential contributor to overheating.
The simplest inspection process, described above, is not the only
alternative. In some instances, the inspection time can actually be What this new automated system provides is the ability to nondestruc-
reduced by using a recipe to scan only the significant regions of the tively inspect the internal features of IGBT modules at a high through-
module, and to skip the regions that do not have solder, die attach, or put rate according to the user’s definitions of accept and reject. Aside
a die. from startup, it operates without a technician to give the user higher
module quality.
This inspection process described to this point is suitable for inspect-
ing a single layer of interest, such as the solder. But the user of the Contact information:
system may be concerned with defects at more than one level within Sonoscan, Inc.
the module. Typically the critical defects are voids in the solder layer 2149 E. Pratt Blvd.
and in the die attach material. Both can block heat and thus pose the Elk Grove Village IL USA 60007
risk of module failure. Phone: 847 437-6400
Fax: 847 437-1550
Both the solder layer and the die attach layer can be imaged at the E-mail: info@sonoscan.com
same time during scanning, without increasing the scan time. A scan-
ning recipe is used that sets a gate for the solder layer - meaning that
it accepts for imaging of the solder layer only those echoes whose www.sonoscan.com
arrival time indicates that they were reflected by a material interface
between the heat sink and the raft. A second gate is set for the die
attach material, which will use for imaging only those echoes that
originated between the top of the raft and the bottom of the die.
The result of gating on two depths of interest is two acoustic images,

one for the solder layer and one for the die attach layer. All that has
changed is that software picks up two echoes from each pulse instead
of one. The process takes no longer, and lets the user cover two
potential trouble spots. Voids in the solder layer will be bright white.
Voids in the die attach layer will also be bright white, but these echoes
must travel through the solder layer on their way to the transducer. If
there are voids in the solder layer, they will appear in the die attach
image as black acoustic shadows because they blocked some of the
ultrasound reflected from the die attach layer. It is possible, of course,
that a void in the die attach layer will not be seen because a void in

CONTENT
LIGHTING
More Light with Less Power

Report from LpS 2014
The LED professional Symposium + Expo 2014 (LpS 2014) took place from September
30th to October 2nd in Bregenz, Austria. 58 multidisciplinary expert talks, 5 hands on
workshops and 2 tech-panels were hosted to inform the visitors about all aspects of LED
lighting. Close to 100 companies were exhibiting and launching new innovations and
products to the SSL marketplace. This article introduces some of them related to power.
By Wolfgang Patelay, Freelance Journalist, Bodo’s Power Systems
Lighting systems based on LED and OLED technologies promising companies are increasingly using the LpS as a platform for their Eu-
great power savings but their design is also challenging. Preferred ropean or global product launches. This year the following companies
solutions have to incorporate the latest technologies, smart systems, (in alphabetical order) presented amongst other things new products.
new standards, advanced functionalities and new user behaviors.
Therefore, a holistic design and engineering approach is required
in order to develop successful LED Lighting Systems for the future.
Therefore integrated designs formed the core of the LpS 2014 Sym-
posium and Exhibition for Integrated LED Lighting System Designs
program. All lectures, workshops and tech-panels were linked to this
central theme. Experts from various disciplines came together to pres-
ent, discuss, exchange and explore best practices and develop new
lighting concepts and designs for optimized environments. The new
approach that was implemented this year intentionally links theory
and practice. The first two days of the Symposium feature inspiring
lecture presentations in four parallel sessions and are followed by
an interactive third day full of workshops and discussions to foster
information exchange and practical applications. The most important
trends and visions in future LED lighting systems, materials and
manufacturing, light sources, reliability and lifetime, engineering of
LED optics, electronics and smart lighting as well as design with LEDs Figure 1: LCL230R-AC lamp reduces maintenance costs in buildings
and OLEDs were covered in the 58 lectures presented by interna- due to the high reliability and long life
tional experts from industry and research.
Auer Lighting was introducing their light guides made of borosilicate
The third day of the LpS featured five workshops and two tech- glass using injection-molding technology. This technology resists heat
panels, which run on five parallel tracks. Topics like Visual Perception, better than the plastic counterparts. Glass light guides are used in ap-
Luminary Design, 3-D Printed Optics, LED driver designs for Smart plications with high-power LEDs, e.g. automotive and stage lighting.
Lighting and Zigbee for wireless lighting solutions were discussed and They help to achieve the desired light distribution and colour mixing.
demonstrated. Prof. Mehmet Arik, known as the “Edison of the 21st Especially with high-power LEDs, temperatures easily can exceed the
century”, was opening the workshop series with his keynote about maximum operating temperatures of plastic materials like acrylic, PC,
“Breakthrough Technologies and Strategies in SSL Developments – and silicone. Beyond its supreme thermal stability, the borosilicate
Thermal Management of LEDs”. The lighting industry is facing a shift glass SUPRAX 8488 offers low thermal expansion and zero water
from wired towards wireless connectivity, driven by several trends. absorption allowing for precise light guidance along difficult environ-
The way people control devices is changing. New value added func- mental conditions. Auer Lighting offers customized light guides as well
tionalities in automation are becoming more common and enhancing as standard solutions.
the customer experiences. Additionally, wireless technology is now
available at low prices. Consequently, a unified approach is required BQ Ceramics was showing their first ceramic-coated metal core PCB
to enable system compatibility. Therefore the Connected Lighting with integrated heat sink, which offers superior thermal conductivity
Alliance (TCLA) has defined the ZigBee Light Link standard as the at reasonable costs. The Polar Light technology is the first ceramic
preferred common open standard for wireless controlled lighting, coated MC-PCB with integrated heat sink and superior thermal con-
which was introduced and discussed in detail at their workshop. ductivity, specifically developed for LED applications. It allows LEDs
to be placed in direct contact with the ceramic coated aluminum PCB.
The exhibition space was extended this year for 100 exhibitors such The concept provides superior thermal conductivity, whereby the heat
as Samsung, Cree, Infineon, Wago, Fischer, Bayer Material Science, generated directly underneath the High Power LEDs is very effectively
Arrow and OEC. The reputation of the fair is growing and leading dissipated to the ambient, resulting in a junction temperature that is

CONTENT
LIGHTING
up to 30°C lower than on a traditional MC-PCB. The BQ Polar Light

reduces the number of components in the light engine. Fewer compo-
nents mean less material and fewer assembly steps. Combining these
aspects, Polar Light enables applications that need more light emitted
from compact spaces, offering design flexibility at lower cost.
Data Link presented a new lamp designed with their new patented
planar and AC LED technology. The AC LED technology has enabled
that the LCL230R-AC lamp has a minimum of components and no
electronic parts that are susceptible to aging. Additionally this lamp
can endure millions of power cycles and has a very long life. Flush
Mount Ceiling Lamp is low energy alternative to incandescent and
Compact Fluorescent bulb. LCL230R-AC provides a large luminous
flux of at least 1400 lumens, while its consumption is only 16W and
has a real lifespan of over 60,000 hours. The lamp has a very pleas-
ant white light suitable for domestic dwellings and residential market,
with colour temperatures available from warm white 2700K to neutral
white 4000K depending on the application. This lamp has thermal
management due to the large surface cooler that allows the low
LED junction temperature of maximum 65°C. The lamp is thermally
protected, which means that at higher ambient temperatures reduce
the intensity of light and prevent overheating of the LED and shorten
lifespan.
fixtures which can incorporate IP20 drivers (possible lightning protec-

tion). Various currents are available, easily adaptable for particular
COBs from specific customer. The drivers show high efficiency both
electrical (90‐91%) as well as luminous (ROC <2%). LC-D-UN driv-
ers show also the same input voltage range but for loads up to 90 W
and in “slim” format. They are class I devices for indoor linear lighting
Figure 2: The LED driver LC-XT has a power factor of > 0.96 and feature the same high efficiency of the LC-E-UN-Series. The
LC-C-UN drivers feature a different input voltage range of 110 – 240 V
for loads up to 60 W. They are linear class I devices for indoor lighting
ELT introduced two new driver product lines: The LC-XT, which is which do not require a slim format (driver height 28mm). Its efficiency
characterized by very low current output ripple (2%) and low THD is electrical up to 87% and luminous ROC <2%.
(< 10%) and the LC-UN universal voltage multi-power LED drivers.
LC-XT is a solution up to 1400mA and 150W. In addition, there is a LUXeXceL announced both the launch of a new additive manufactur-
specific option for 90W. >The driver shows a long life time of 50,000 ing platform that delivers high speed and precision as well as the
hours at Tc = 75°C and Ta = 60°C. (Ta ‐40 °C / + 60 °C). The LED introduction of a new clear material “LUX-Opticlear”, allowing high
driver is implemented with very high quality components used in the quality optics manufacturing up to 20mm in height in 3 D printing
automotive industry, so it works properly at ‐40 °C. The LC-XT has a process. With these new capabilities, this process is ready to compete
surge protection of 6kV and an extra protection, the ITP. with injection molding for the production of small and mid-sized series
of optical components. The company now offers a fast and effective
The universal voltage multi-power LED drivers of the LC-UN series service for prototyping, iterating and the manufacturing of optics, cut-
feature 4 models which differentiate in form factor and power. LC-A- ting out the need for costly and inflexible tooling.
UN drivers feature an input voltage range of 110 – 277V for loads up
to 25 W regulated from very low loads (<10W). The drivers are class II
and SELV and therefore especially suited for down-light applications. www.LpS2014.com
LC-E-UN series drivers have the same input voltage range for loads
up to 50 W. They are suited for COBs and down-light applications
(class I, class II and fan switch on option) and outdoor IP67 lighting

NEWCONTENT
PRODUCTS
1 W DC-DC Converter 35% Smaller Height Profile

Murata announced the NXE1 series of low cost 1 Watt DC-DC isolated surface mount DC/DC converters available in the market the
converters from Murata Power Solutions. Measuring only 12.7 x 10.4 NXE1 has the benefit of being manufactured using automated pro-
x 4.8 mm these ultra compact converters have a profile at least 35% cesses that greatly improve overall product reliability and delivering
lower than the 7 mm height industry norm making them suitable for consistent performance characteristics.
use in even the smallest space constrained designs. Also, unlike other Other space-saving features of the NXE1 include a transformer that
is embedded in the substrate. Together all the innovative design and
fabrication features of the NXE1 contribute to Murata being able to
price the series at least 50% below other similar devices making what
is believed to be the lowest cost isolated SMD 1 W DC/DC converter
available.
At launch the first model in the series has +5 VDC input & output with
other 3 VDC input versions available shortly. Input to output isolation
is up to 3 kVDC.
With an industry standard pin compatible footprint the series is ideal
for a replacement product in existing designs as well as for new com-
pact applications. Short circuit protection is standard and the series
can be used across the full industrial temperature range from -40 to
+85 degrees C.
Certification to the internationally recognized UL60950 safety stan-
dard for IT and commercial equipment is pending.
www.murata.com
800V DTMOS-IV Super Junction MOSFET

Toshiba Electronics Europe (TEE) has introduced the first 800V include power supplies and adapters, fly back converters and LED
power MOSFET based on its high voltage DTMOS IV super junction lighting equipment.
technology. The TK17A80W uses Toshiba’s state-of-the-art single Compared to multi epitaxial processes, Toshiba’s Deep Trench
epitaxial process and is ideally suited to equipment that requires high technology delivers lower ON-resistance (RDS(ON)) at higher
reliability, power efficiency and a compact design. Applications will temperatures. It also offers reduced turn-off switching losses (EOSS)
than previous technology generations. The combination of reduced
increase in RDS(ON) at high temperatures and reduced EOSS
provides higher efficiency for power supplies and assists designers in
minimizing system size.
DTMOS IV enables faster switching performance by reducing parasit-
ic capacitance between gate and drain. Typical CISS for TK17A80W
is only 1450pF (@VDS=300V, f=100kHz). Maximum ratings are
800VDSS , ±30VGSS and 17A drain current. Maximum RDS(ON) is
0.3 Ohm.
The TK17A80W starts mass production in the fourth quarter of 2014
in a fully isolated TO-220SIS package. Samples are available now.
Further performance options and TO-220, DPAK and IPAK packages
will follow.
www.toshiba-components.com
Introduction of Three 20W Power Amplifiers

Richardson RFPD, Inc. announced immediate availability and full design support capabilities for
three new 20W power amplifiers from Wavelex.
The 50-ohm, unconditionally stable PAs operate from a single DC power supply and cover down to
820 MHz and up to at least 890 MHz.
They feature infinite load VSWR protection and a minimum of 50% power added efficiency, and
they are SMA-connectorized and packaged with precision machine housings in Wavelex’s WP-1M
package. Wavelex products are 100% production-tested on all minimum and maximum electrical
specifications.
The PAs are suitable for GSM mobile infrastructure and fixed wireless communication applications.
The WPA08-35B, WPA08-53A, and WPA0810A are part of a new family of 17W to 25W power
amplifiers from Wavelex.
www.richardsonrfpd.com
NEW
CONTENT
PRODUCTS
25 mOhm/1700 V Silicon Carbide Transistors Released

GeneSiC Semiconductor, a pioneer and GeneSiC exhibit ultra-fast switching capa- co-efficient of on-resistance, and are capable
global supplier of a broad range of Silicon bility (similar to that of SiC MOSFETs), a of being driven by commercially gate drivers,
Carbide (SiC) power semiconductors today square reverse biased safe operation area unlike other SiC switches. Unique advan-
announces the immediate availability of (RBSOA), as well as temperature-indepen- tages of the SJT in contrast to other SiC
a family of low on-resistance 1700V and dent transient energy losses and switching switches is its higher long term reliability, >10
1200 V SiC Junction Transistors in TO-247 times. These switches are gate-oxide free, usec short circuit capability, and superior
packages. The use of high voltage, high normally-off, exhibit positive temperature avalanche capability
frequency, high temperature and low on-
resistance capable SiC Junction Transis- http://www.genesicsemi.com/commercial-sic/sic-junction-transistors/
tors will increase conversion efficiency and
reduce the size/weight/volume of power
✓
electronics applications requiring higher bus
voltages. These devices are targeted for use
in a wide variety of applications including DC
microgrids, Vehicle Fast chargers, server,
telecom and networking power supplies, un-
interruptable power supplies, solar inverters,
Wind power systems, and industrial motor
control systems.
SiC Junction Transistors (SJT) offered by
With you from start to finish.

We understand that electronic product design is a journey with
many challenges. As a leading manufacturer of power supplies,
we are with you from start to finish, collaborating to ensure that
your next project is a success. Let us be your power expert.
Novum® Ac-Dc Dc-Dc

Advanced Power Power Supplies Converters
www.cui.com/PowerExpert

NEW
CONTENT
PRODUCTS
Dimmable 25W and 35W LED Drivers

RECOM expands its already robust portfolio of dimmable LED drivers dimming, allowing the modules to be dimmed with an analog signal
with the addition of two new 3-in-1 dimmable LED drivers: the 25W (1-10V), PWM, or external resistor. These drivers round out RECOM’s
RACD25-A and the 35W RACD35-A. Each series features 3-in-1 already comprehensive portfolio of dimmable LED drivers, and fulfill
the demand for midrange LED power supplies.
Due to a wide input voltage range (universal AC input 90-305VAC),
these versatile drivers are well-suited for power grids worldwide. Each
is available in 1 of 5 different types of output current, ranging from
350mA to 2100mA, making them capable of powering a wide range of
CoB LEDs.
Each unit offers an excellent power factor (>0.98 at 120VAC, >0.93
at 240VAC and >0.9 at 277VAC) and an efficiency of more than 81%
for the RACD25-A and 83% for the RACD35-A. Both modules are just
slightly larger than a deck of cards (102x73.5x33mm), and integrate
easily into almost any application.
Fully protected against short circuit, overload, and over-temperature,
these units carry double-isolated wires and come housed in IP67-
rated casing, making the drivers environmentally versatile, usable
both indoors and outdoors, in damp and in wet areas. Ideal applica-
tions include general lighting, public buildings, retail, outdoor lighting,
architectural lighting, and bathrooms.
The new RACD25-A and RACD35-A 3-in-1 dimmable LED driver
series are UL8750 and EN61347 certified, and also comply with the
European harmonics standard EN61000-3-2 Class B. Each driver is
backed by a 5-year warranty.
www.recom-lighting.com
Configurable Output Voltage DC/DC Converters for IGBT

and MOSFET gate drive
Murata announced the MGJ3 and MGJ6 series of configurable MOSFET bridge circuit designs. Providing triple output voltages of +
output voltage, high isolation DC/DC converters from Murata Power 15, + 5 and - 5 VDC, these converters provide optimum switching of
Solutions. These 3 Watt and 6 Watt surface mounted devices are IGBT drives for best overall system efficiency. In addition, the outputs
optimized for use as high-side and low-side gate drivers in IGBT and are configurable to suit a number of different circuit requirements such
as + 15 and - 5 VDC or + 20 and -5 VDC.
Both the MGJ3 3 Watt and the MGJ6 6 watt converters are available
with a choice of wide input voltages around nominal + 5, + 12 or +
24 VDC inputs. The input ranges cater for 4.5 to 9 VDC (+5 VDC
nominal), 9 to 18 VDC (+12 VDC nominal) and 18 to 36 VDC (+ 24
VDC nominal).
measures 23.11 x 22.61 x 14.65 mm and the MGJ6 is 31.24 x 22.61 x
14.65 mm. Both series can operate over the wide temperature range
from – 40 to + 105 degrees C, Short circuit and overload protection
features ensure a robust operation during system fault conditions.
Other control inputs include an enable pin to facilitate power saving
and a frequency synchronization input that aids EMC filter design.
Typical applications for the MGJ series include use in motor drives,
traction control drives and wind turbine generators.
www.murata.com

CONTENT
Analogue Front Ends offer High Accuracy

for Single-Phase Smart Meters
Microchip announces the completion of its high-accuracy,
1-8 channel, single and poly-phase MCP391X energy-
measurement Analogue Front End (AFE) family. The new
MCP3919 and MCP3912 members integrate three and
four channels of 24-bit, delta-sigma Analogue-to-Digital
Conversion (ADC), respectively, with industry-leading
accuracy of 93.5 dB SINAD, -107 dB THD and 112 dB
SFDR for precise signal acquisition and higher-performing
end-products. These are the optimal numbers of channels
for single-phase energy meters with neutral monitoring
(3-channel); or single-phase, three-wire energy meters
(4-channel). The high level of integration on the new AFEs
also includes a low-drift voltage reference, programmable
gain amplifiers, phase-delay compensation and Cyclic
Redundancy Check (CRC).
As the energy-metering infrastructure is being upgraded
worldwide, designers are demanding increased AFE ac-
curacy and integration to develop the latest generation of
smart meters. These features are also required by the
designers of advanced power-monitoring systems for ap- Microchip also announced two new tools to aid in the development of
plications such as server power supplies and power distribution units, energy systems using these latest AFEs. The MCP3912 Evaluation
electronic circuit breakers, smart power strips and other data-acqui- Board (ADM00499) and MCP3919 Evaluation Board (ADM00573) can
sition products in the industrial, commercial and consumer markets. each be purchased today for $129.99.
Microchip’s newest AFEs improve application performance with their The MCP3912 and MCP3919 AFEs are both available today for sam-
industry-leading accuracy, high integration and optimal number of pling and volume production. Both AFEs are offered in 28-pin QFN
channels for single-phase energy measurement. Additionally, the and SSOP packages.
high AFE accuracy facilitates energy-meter calibration, which reduces
production costs.
www.microchip.com/AFE-Page-102114a
The future power of

performance is electric
take tomorrow’s cars
to the next level
Danfoss Silicon Power IGBT Modules
Today’s designers must cut CO2 emission without
sacrificing driving pleasure, cost and reliability.
With our new super-cool, robust power modules,
we’re helping take tomorrow’s performance cars
to the next level.
With its state of the art, highly automated, ISO/
TS 16949 certified production facility in Flensburg
Germany, Danfoss is equipped to support these
new technologies for series vehicles as of 2015.
Call us to learn more about how we can help you
electrify driving pleasure.
Danfoss Silicon Power GmbH

Husumer Strasse 251 24941 Flensburg, Germany
Tel. +49 461 4301-40
www.bodospower.com December 2014 Bodo´s Power Systems
E-mail: dsp-sales@danfoss.com ® 55
www.powermodules.danfoss.com
NEW
CONTENT
PRODUCTS
Processor-in-the-Loop (PIL) Simulation with PLECS

Plexim introduces the Processor-in-the-Loop (PIL) Simulation with tor. With the PLECS PIL package, this can be done by tying actual
PLECS. When developing embedded control algorithms engineers code executing on real hardware into the virtual world of a PLECS
often wish to test their code by executing it inside a circuit simula- model. Instead of reading the physical sensors, values calculated by
the simulation tool are used as inputs to
the embedded algorithm.
Similarly, outputs of the control algo-
rithms executing on the processor are
fed back into the simulation to drive the
virtual environment. This approach can
expose platform-specific software defects
such as overflow conditions and casting
errors. PIL simulations can also detect
and analyze potential problems related
to the multi-threaded execution of control
algorithms, including jitter and resource
corruption.
www.plexim.com
Gallium Nitride Devices Poised to Become Core Technology

GaN Systems Inc, a leading developer of gallium nitride power switch- smaller and at lower cost than tradition design approaches. The fast
ing semiconductors, says gallium nitride is set to take off dramatically switching and dense current-carrying capability of Island Technol-
and will become the core technology in power electronics within the ogy® devices is further enhanced by GaN Systems’ compact, near
next three years. Founded a mere seven years ago, GaN Systems chipscale GaNPX™ packaging, which has no wire bonds, minimizing
has developed an unparalleled range of gallium nitride, high power inductance and thermal resistance and increasing reliability. The
transistors based on its unique Island Technology® design. These third technological innovation at the heart of GaN Systems products
new GaN devices offer significant advantages over traditional silicon is Drive Assist™, on-chip drivers that simplify circuit design, remove
MOSFETs and IGBTs and usher in smaller, lighter and more efficient Miller driving issues and improve switching speed.
power electronics in numerous industrial, consumer and automo- “Power system engineers around the world concur that the availability
tive applications such as datacentre power supplies, notebook travel of GaN transistors may be the single most important advance since
adapters, air conditioning motors and electric vehicle battery chargers the IGBT became available in the 1990s. The ability to decrease
and traction electronics. power losses by 50%-90% or to reduce the size and weight of a sys-
tem up to one quarter of its original size will alter the
way power systems are designed and used. GaN
Systems’ industry-leading GaN power transis-
tors are enabling this transition to begin. We have
brought the broadest GaN product offering to the
global marketplace with unique technology that
enables it to be incorporated easily into the next
generation of power electronics. ” says Jim Witham,
CEO GaN Systems.
Witham continues: “2014 has been one of the most
exciting and significant years since the company’s
inception. Our global distribution agreement with
Mouser Electronics now delivers GaN Systems’
products directly into the hands of electronics
design engineers, we have added to our headcount
worldwide and made significant appointments at VP
level in Europe and Asia, and we have presented
technical papers or exhibited at major conferences
worldwide. Earlier this year we moved our HQ
into new, expanded premises in Kanata, Ottawa’s
The Ottawa-based company is exhibiting at Electronica 2014 for the high-tech district, so we could increase our laboratory space tenfold,
first time and is showcasing the most comprehensive range of gallium ensure our R&D facility incorporates state-of-the-art custom facilities
nitride devices available on the global market with current ratings from and the dedicated power and cooling systems needed to fully explore
8A to 250A. Based on the company’s core IP, Island Technology®, higher power applications and accelerate new product development
these power switching semiconductors incorporate the wide-bandgap and testing.”
and superior switching speed, temperature, voltage and current
performance of gallium nitride into a unique structure that maximizes
wafer yields and produces highly efficient transistors up to four times www.gansystems.com

The perfect place
to do business
See you at HUSUM Wind!

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in co-operation with
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www.husumwind.com
NEW
CONTENT
PRODUCTS
1200V Gen8 IGBT Family Delivers Benchmark Efficiency and Ruggedness

International Rectifier introduced a new generation Insulated Gate Bi- offer best-in-class performance for industrial and energy saving ap-
polar Transistor (IGBT) technology platform. The Generation 8 (Gen8) plications.
1200V IGBT platform utilizes IR’s latest generation trench gate field The novel Gen8 devices are available with current ratings from 8A up
stop technology delivered in industry standard TO-247 packages to to 60A with typical VCE(ON) of 1.7V and a short-circuit rating of 10µs
to reduce power dissipation, resulting in increased power density and
superior robustness.
“With the development of this new benchmark technology and state-
of-the-art IGBT silicon platform, IR underlines its decades of commit-
ment to the advancement of power electronics technology. Our goal
is to achieve 100 percent inverterization of all electric motors for a
more efficient use of electric energy and a greener environment,” said
Alberto Guerra, Vice President Strategic Marketing, IR’s Energy Sav-
ing Products Business Unit.
The new technology offers softer turn-off characteristics ideal for
motor drive applications, minimizing dv/dt to reduce EMI, and over-
voltage, increasing reliability and ruggedness. A narrow distribution of
parameters offers excellent current sharing when paralleling multiple
IGBTs. The thin wafer technology delivers improved thermal resis-
tance and maximum junction temperature up to 175°C.
www.irf.com
Low-Voltage MOSFET Family with Dual-sided Cooling Packages

Toshiba Electronics Europe (TEE) has
announced that its high-efficiency,
low-voltage MOSFET technologies
are now available in ultra-compact
DSOP Advance package options.
The new packages offer dual-sided
cooling to significantly improve heat
dissipation. This will help designers of
high-component-density applications
to minimise the PCB temperature and
improve performance without board
space penalties.
The DSOP Advance package shares
the same 5mm x 6mm footprint as a
SOP Advance device. In comparative
tests operating temperatures – when
used in conjunction with a suitable
heatsink - for 30V MOSFETs were
reduced by more than 34% at cur-
rents above 30A. In addition, in some
designs the reduced thermal resistance
of a DSOP Advance package may sup-
port elimination of a heatsink.
Toshiba will offer DSOP Advance
packages with its existing UMOS VIII-H Target applications for the new DSOP Advance MOSFETs will include
and its new UMOS IX-H families of MOSFET technologies. These high-power density, high-performance switching designs including
technologies combine industry-leading on resistance (RDS(ON)) synchronous rectification circuitry in servers and telecoms power sup-
ratings with low output capacitance to deliver ultra-efficient switching ply equipment, as well as power tools.
performance. DSOP Advance options will be available for a number of
www.toshiba-components.com
MOSFETs with voltage ratings between 30V and 100V initially.

NEW
CONTENT
PRODUCTS
AC/DC Product Portfolio includes now Synchronous Rectifiers

Dialog Semiconductor launched its iW671 synchronous rectifier Schottky diode, thereby reducing power loss. However, conventional
designed to enable small, higher power adapters for mobile devices. synchronous rectifiers still require a Schottky diode to be used in
The device replaces the secondary-side Schottky diode used in parallel as they need to turn off when approaching the zero crossing
conventional power supplies with a more efficient MOSFET and works to eliminate the risk of shoot-through, which can overheat and poten-
with Dialog iW1786 or iW1787 primary-side controllers to deliver tially destroy the power supply. The iW671 uses the proprietary digital
efficiency greater than 88%. This enables the higher power density control technology of Dialog to eliminate the need for the parallel
needed for more powerful, small form-factor adapters without exceed- Schottky diode. Synchronous rectification also leads to an efficiency
ing thermal limits. improvement of approximately 4% at 5V, resulting in the high >88%
full-load efficiency for higher power operation in a small form-factor
without overheating the power supply.
The iW671 is designed to work for 15W or 50W output power, ultra-
low no-load standby power consumption of <15mW (iW1786) and
<30mW (iW1787) and high efficiency, enabling chargers and adapters
to meet stringent global energy standards including the final 2014
U.S. DOE and European CoC version 5, tier 2 regulations.
Power supplies for electronic products continue to consume power
when plugged in but not in use. To achieve low standby power, these
power supplies typically enter a low standby operating mode. How-
ever, when a load is applied, they need to “wake up” quickly to keep
the output voltage from dropping too low. Dynamic load response
(DLR) is determined by the speed at which the system wakes up and
responds to changes in the power load. Typical adapter and charger
design approaches achieve low standby power and high efficiency
at the expense of slow wake up (i.e. slow DLR performance). The
iW671enables ultra-fast DLR for quicker recovery from low-power
Conventional power supplies use Schottky diodes to rectify the output standby mode by integrating an adaptive voltage position monitor that
voltage (change the AC voltage to a DC voltage). When replacing detects the flyback converter output voltage undershoot.
the Schottky diode with a synchronous rectifier, the voltage dropped
across the switching MOSFET is less than the forward voltage of the www.dialog-semiconductor.com/
Anz_ITPR_3_Blau.qxp 17.07.2009 17:00 Seite 1
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NEW
CONTENT
PRODUCTS
Microcontroller Family Provides

Closed-Loop Digital Control and Safety Monitoring
Microchip announced expansion of its 8-bit PIC® microcontroller and effort. These peripherals also reduce system complexity by
(MCU) portfolio, with the peripheral-rich, low-pin count PIC16(L) eliminating the need for additional code and external components.
F161X family. These new MCUs introduce and expand the offer- Hardware-based peripherals offload timing-critical and core-intensive
ing of Microchip’s Core Independent Peripherals (CIP), which were functions from the CPU, allowing it to focus on other critical tasks
designed to reduce interrupt latency, lower power consumption and within the system.
increase system efficiency and safety, while minimising design time The PIC16(L)F161X PIC MCUs offer the Math Accelerator (Math
ACC) with Proportional Integral Derivative (PID), which provide com-
pletely Core Independent calculations, with the capability to perform
16-bit math and PID operations. The family also includes the Angular
Timer (AngTmr), which is a hardware module that calculates the
rotational angle in functions, such as motor control, TRIAC control,
or Capacitive Discharge Ignition (CDI) systems. Regardless of
speed, the AngTmr allows recurring interrupts at a specific rotational
or sinusoidal angle without using the core’s computation. The CIPs
can be configured to perform a host of given functions that increase
execution speeds and decrease software requirements. Offloading
these functions frees up the CPU do other tasks, consumes less
programme memory, and reduces the overall power consumption of
the MCU.
www.microchip.com/PIC16_LF161X-Family-Product-Page-111114a
The InnoSwitch Family Revolutionizes

Switch-Mode Power-Supply Design
Power Integrations announced a new class of power-supply ICs. the SR function with the secondary-side master controller and by
The InnoSwitch™ family of highly integrated switcher ICs combines leveraging the speed of the FluxLink communication channel, the SR
primary, secondary and feedback circuits into a single, worldwide switch timing is optimized for maximum efficiency. The fast commu-
safety-rated, surface-mount package. With InnoSwitch ICs, design- nication link also ensures highly reliable SR operation, eliminating
ers can easily exceed all global regulatory standards for efficiency shoot-through in either discontinuous conduction mode (DCM) or
and no-load consumption, while minimizing component count and continuous conduction mode (CCM), even during transient loads and
providing highly accurate constant voltage and constant current up to fault conditions. Effective SR operation in both DCM and CCM modes
25 W. The InnoSwitch family is ideal for smart mobile device chargers is especially beneficial in adaptive-voltage charger applications.
and adapters for a wide range of applications such as set-top boxes,
networking equipment and computer peripherals.
Inside the new device, highly accurate secondary-side direct voltage
and current measurements are communicated across the safety
isolation barrier using high-speed digital FluxLinkTM technology. This
proprietary new feedback technique permits precise control without
the need for a bulky optocoupler, while avoiding the performance
compromises inherent in primary-side regulation (PSR), such as
limited accuracy and efficiency and poor transient response versus
no-load consumption. Furthermore, unlike primary-side regulated
switchers, InnoSwitch-based secondary-side regulated (SSR) designs
are inherently less sensitive to the tolerance of external compo-
nents such as transformers, diodes, resistors and capacitors. This
dramatically increases manufacturing yield and reduces total power
supply cost. Now, mobile device chargers up to 5 A can have a total
component count as low as PSR designs, with accurate CV and CC InnoSwitch ICs start up using bias current drawn from a high-voltage
control (+/- 3% and +/- 5% respectively) and low voltage ripple. With current source connected to the DRAIN pin, eliminating the need
high operating efficiency and <10 mW no-load consumption, the ICs for external start-up components. An external bias winding reduces
easily comply with efficiency standards such as the California Energy no-load and increases system efficiency during normal operation. The
Commission, European Union Code of Conduct (CoC) Version 5, Tier ICs also include comprehensive system-level features such as output
2, and the upcoming US Department of Energy standards (DoE 6), over-voltage protection, overload power limiting, hysteretic thermal
which will become mandatory in February, 2016. protection and frequency jitter to reduce EMI.
InnoSwitch power-supply ICs include a high-voltage power MOSFET,
primary-side controller, FluxLink feedback technology and a second-
ary-side controller with synchronous rectification (SR). By combining http://www.power.com/innoswitch-ch

NEW
CONTENT
PRODUCTS
Expanded
Family of 650V
SiC Diodes
YOU CAN’T COPY
Richardson RFPD, Inc. announced the avail-
ability and full design support capabilities for
five new 650V silicon carbide (SiC) Schottky
EXPERIENCE
diodes from Cree, Inc.
PRECISION AND POWER RESISTORS
The devices represent an expansion to

Cree’s family of Z-Rec™ 650V Junction We invented the Manganin® resistance alloy 125 Today, we have a wealth of expertise based on
Barrier Schottky (JBS) diodes that previously years ago. To this day, we produce the Manganin® countless projects on behalf of our customers. The
included 10A, 8A, 6A and 4A 650V diodes in used in our resistors by ourselves. automotive industry’s high standards were the dri-
TO-220-2 packages. ving force behind the continuous advancement of
The entire line of JBS diodes offer zero More than 20 years ago, we patented the use of our BVx resistors. For years, we have also been
reverse recovery current, zero forward electron-beam welding for the production of re- leveraging this experience to develop successful
recovery voltage, high-frequency operation, sistors, laying the foundation for the ISA-WELD® industrial applications.
temperature-independent switching behavior, manufacturing technology (composite material of
and extremely fast switching. They are ide- Cu-MANGANIN®-Cu). We were the first to use this The result: resistors that provide unbeatable
ally suited for switch mode power supply, method to manufacture resistors. And for a long excellent performance, outstanding thermal
power factor correction, solar inverter, motor time, we were the only ones, too. characteristics and impressive value for money.
drive, and electrical vehicle charger applica-
tions.
www.richardsonrfpd.com
Innovation by Tradition
Isabellenhütte Heusler GmbH & Co. KG

Eibacher Weg 3 – 5 · 35683 Dillenburg ·Phone +49 (0) 2771 934-0 · Fax +49 (0) 2771 23030
sales.components@isabellenhuette.de · www.isabellenhuette.de

NEW
CONTENT
PRODUCTS
Optocouplers in 14.2mm Wide Creepage and Clearance for

High Voltage Applications
Avago Technologies announced a new family of 14.2mm optocoupler insulation, 14.2mm Creepage and Clearance, Industry’s highest insu-
devices, the ACNT-Hxxx, designed for high voltage applications. The lation voltage in compact 14.2mm SSO-8 package, Meets stringent
ACNT-Hxxx family consists of three major product series: the ACNT- system and equipment regulatory requirements
H3xx, high efficiency gate drive optocouplers for driving IGBTs; the High Gate Driving Current and Noise Immunity (ACNT-H3xx), Mini-
ACNT-H6xL, low power 10MBd digital optocouplers for system control mum 2A output current for driving IGBT, Minimum 40kV/µs CMR at
and data communications; and the ACNT-H79x, high linearity isolation VCM = 1.5 kV minimizing erroneous signals in driving IGBT in noisy
amplifiers for current and voltage sensing applications. environment, Low Power Consumption (ACNT-H6xL), Less than 20
mW, Industry’s lowest power 10MBd optocoupler in compact 14.2mm
SSO-8 package, Excellent Linearity and Gain Accuracy (ACNT-H79x),
Advanced sigma-delta A/D modulation technology with full differential
isolation
0.05% linearity and -50ppm/°C gain drift for enhanced accuracy.
“High-voltage power systems today require chip-level components to

support well insulated and noise-immune large signals to minimize
copper wiring costs while maintaining optimal power efficiency”, said
Kheng-Jam Lee, marketing director of Avago’s Isolation Products Divi-
sion. “Avago has stepped up to the challenge with the introduction of
a new 14.2mm optocoupler family. With the industry’s highest insula-
tion voltage in compact SSO-8 footprint, the ACNT-Hxxx is the most
complete and cost-effective set of high-voltage optocoupler solutions
on the market today addressing a wide range of high power industrial
applications including inverters, motor drives and power supplies.”
ACNT-Hxxx Highlighted Features and Benefits: Safety Approvals for
CSA, UL and IEC, IEC/EN/DIN EN 60747-5-5: VIORM = 2,262 Vpeak,
UL1577: VISO = 7,500 Vrms, Robust, reliable and fail safe reinforced www.avagotech.com
Thermal Management Solutions with THERM-A-GAP™

Gel with Conductivity Extensions to 6 W/m-k
As more and more high performance electronics are utilised across to offer thermal conductivity up to 6 W/m-k and typical applications
a wide range of applications, it has stimulated a growing need to include high performance devices requiring minimal thermal resis-
provide new innovative thermal materials that can effectively manage tance, ranging from automotive electronic control units (ECUs), power
the heat dissipation challenges. In line with this need Parker Chomer- supplies and semiconductors, through to memory/power modules, mi-
ics is constantly evolving its range of THERM-A-GAP™ thermally croprocessors/graphics processors, flat panel displays and consumer
conductive dispensing gels in order that customers can maintain electronics.
both system performance and reliability. As the market leader in this Heat generated by high performance devices must be removed to the
domain Parker Chomerics has recently extended its range of gels ambient environment to maintain the junction temperature of com-
ponents within safe operating limits. Often this heat removal process
involves conduction from a package surface to a heat spreader that
can more efficiently transfer the heat away. The spreader has to be
joined carefully to the package to minimise the thermal resistance of
this newly formed thermal joint.
Typical thermal interface materials include THERM-A-GAP™ gels,
which are supplied as pre-cured, single component compounds that
can be dispensed over the heat generating package or component.
These materials are silicone-based formulations loaded with conduc-
tive fillers, which are cross-linked to form a low modulus gel.
The latest additions to the innovative THERM-A-GAP™ family, are
setting new benchmarks in performance as they need only ultra-low
compression force to conform over irregular interfaces and can be
applied to single devices with minimum bond-line thickness as well as
to multiple devices with variable Z-axis tolerances. The gel structure
provides superior long-term thermal stability and reliable performance
over conventional greases, which suffer from pump-out and dry-out
issues.
www.parker.com/chomerics

CONTENT
LeaXield™ EMC Filters Mini- International Exhibition with Workshops

on Electromagnetic Compatibility (EMC)
mizes Earth Leakage Currents Stuttgart, Germany, 24 – 26 March 2015
TDK Corporation presents the EPCOS LeaXield™ active filter module
– a completely new solution for the minimization of earth leakage
currents in power drive systems with frequency converters. Leakage
current can cause RCDs (residual current device) to trip. In some
applications this means that RCDs with low thresholds such as 30
mA cannot be used, or only with substantial additional expense. The
LeaXield active filter module is connected between the RCD (residual Take the chance to step into the European market!
current device) and the EMC input filter of the converter in standard
three-phase industrial power grids and does not require an additional
Safe the date and come to Germany to be part
power supply. of Europe's marketplace for electromagnetic
compatibility.
LeaXield detects the common-mode currents on the load-side via a

current sensing transformer. An amplifier generates an inverse of the
leakage currents and feeds them to the power line via a capacitor
network. This produces almost complete cancellation of the leakage
currents. LeaXield is now designed for rated currents of up to 150 A
for 3-phase grids at frequencies of 50/60 Hz and a rated voltage of
520 V AC. The new active filter can be used in systems with leakage
currents of up to 1000 mA.
Besides minimizing earth leakage currents, LeaXield active filter
modules can also improve the EMC performance of power drive sys-
tems in the range up to around 500 kHz. The new active filter module
achieves typical common-mode attenuation values of up to 30 dB at 4
kHz, 40 dB at 10 kHz, and 15 dB at 150 kHz.
The EPCOS LeaXield module can be retrofitted into existing convert-
er-based installations in order to improve their EMC and the RCD
compatibility of the power drive system. Moreover, LeaXield circuits
can be integrated into new EMC filter solutions in order to downsize
the expensive current-compensated filter chokes.
www.epcos.com
Further information:
web: e - emc.com
phone: + 49 711 61946 63
email: emv@mesago.com
NEW
CONTENT
PRODUCTS
The 1st Power Analyzer

... that lets you have it both ways.
Two paths.
One measurement.
In half the time.
Zero compromises.
The LMG670 with its unique DualPath architecture is the long-
awaited solution to a well known dilemma. When optimizing de-
signs for power applications with high-frequency content, engineers
were forced to choose between analysis on the full power spectrum
or a specific portion only. Simultaneous measurements were impos-
sible. To filter, or not to filter - that was the question.
Up to 7 channels · DC – 10 MHz · Accuracy 0.025 % · 500 µA to 32 A
DualPath is the answer. 3 mV to 1000 V · Touchscreen · Gbit-Ethernet · DVI / VGA interface
Experience the new LMG670 with DualPath live at:

Motor & Drive Systems 2015 January 21-22 (Orlando, FL, USA) ZES ZIMMER (Headquarter): +49 6171 628750 · sales@zes.com
APEC 2015 March 15-19 (Charlotte, NC, USA) ZES ZIMMER Inc. (US): +1 760 550 9371 · usa@zes.com
EMV 2015 March 24-26 (Stuttgart, Germany) www.zes.com
Low Profile Polymer Capacitor Family

Panasonic Automotive & Industrial Systems has introduced a new low electrical or mechanical stresses.”
profile version of its SP-Cap range of speciality conductive polymer Panasonic has also announced several other enhancements to the
aluminium capacitors. Measuring just 0.9mm above the PCB, the SP Cap devices. The company has upgraded the ripple current rating
devices (LR & SR series) are rated from 2V up to 6.3V with capaci- of the range, which can now handle up to 10.2Arms at 45degC, two
tance values of 68 to 220μF. Capacitance tolerance is ±20% (120Hz / and a half times higher than previous devices. Devices are also now
+20degC). available with up to 25V working range and focus devices in the family
Polymer capacitors present several advantages over other electrolytic now feature an extended life to 2000 hours at 105degC that enables
devices”, explains Melanie Raimann, European Product Manager for an application endurance of 10years at an ambient temperature
Polymer Capacitors at Panasonic. “Thanks to their ultra-low ESR val- 70degC.
ues, polymer capacitors have a low impedance near their resonance Finally, several devices in the family will be available on smaller 500
point which helps to smooth ripple voltage in power circuits. Polymer piece reels to help with flexibility and prototyping requirements. A
capacitors, unlike ceramic devices, suffer no capacitance drifts due catalogue detailing all Panasonic’s new SP-Cap polymer aluminium
to temperature changes and DC bias, so they remain stable over capacitors can be freely downloaded at:
time. Lastly, polymer capacitors have a self-healing capability that
http://industrial.panasonic.com/jp/i/29880/SPC_E/SPC_E.pdf
eliminates failures due to cracking in the dielectric layer caused by
Advertising Index
ABB Semiconductor C3 EMV 62 Magna 39
Allegro 15 esar 31 Omicron 35
APEC 37 Fuji 25 PCIM Asia 45
CDE 7 GvA C2+21+45 PCIM Europe 41
CUI 53 Hitachi 11 Plexim 3
Danfoss 57 Husum Wind 57 Semikron 19
Dr. Seibt 43 Infineon 9 STS 43
Dynex 17 IR C4 Texas Instruments 13
ECCE 63 Isabellenhütte 61 VMI 51
electronicon 33 ITPR 58 Würth 23
embedded 29 Lem 5 ZES Zimmer 64

HiPak. Hot applications require innovative solutions.
Flicker from steel smelters is compensated with multi-level voltage source SVC
(Static VAR compensation) taking advantage of ABB’s innovative HiPak IGBT
modules, eg the new 3,300 volt 500 ampere dual module.
Demanding high-power applications such as traction inverters, medium voltage
drives, wind turbines, HVDC and FACTS benefit from the high reliability of ABB’s
HiPak modules.
ABB’s family of HiPak modules are available from 1,700 to 6,500 volt as single IGBT,
dual / phase-leg IGBT, chopper and dual diodes. All modules feature low losses
combined with soft-switching performance and record-breaking Safe Operating Area
(SOA).
For more information please contact us or visit our website:
www.abb.com/semiconductors
ABB Switzerland Ltd. / ABB s.r.o.

www.abb.com/semiconductors
abbsem@ch.abb.com
Tel.: +41 58 586 1419
StrongIRFET™ Rugged,
Reliable MOSFETs
Specifications Features:
ID RDS(on) max Qg@
• Ultra low RDS(on)
BVDSS
Package @25°C @Vgs = 10V Vgs = 10V Part Number • High current capability
(V)
(A) (mΩ) (nC)
• Industrial qualified
25 100 0.95 56 IRFH8201TRPbF
25 100 1.05 52 IRFH8202TRPbF • Broad portfolio offering
30 100 1.1 58 IRFH8303TRPbF
PQFN 5x6 30 100 1.3 50 IRFH8307TRPbF
40 100 1.4 134 IRFH7004TRPbF Applications:
40 85 2.4 92 IRFH7440TRPbF
40 85 3.3 65 IRFH7446TRPbF
• DC Motors
30 192 1.3 51 IRF8301MTRPbF • Inverters
DirectFET Med.Can 40 90 1.4 141 IRF7946TRPbF
60 114 3.6 120 IRF7580MTRPBF • UPS
40 195 1.8 150 IRFS7437TRLPbF • Solar Inverter
D2-Pak 40 120 2.8 90 IRFS7440TRLPbF
60 120 5.34 86 IRFS7540TRLPbF • ORing or Hotswap
40 195 1.5 150 IRFS7437TRL7PP
D2-Pak 7pin • Battery Packs
60 240 1.4 236 IRFS7530-7PP
40 90 2.5 89 IRFR7440TRPbF
D-Pak
60 90 4 86 IRFR7540TRPbF
40 195 1.3 300 IRFB7430PbF
40 195 1.6 216 IRFB7434PbF
40 195 2 150 IRFB7437PbF
TO-220AB
40 120 2.5 90 IRFB7440PbF
40 118 3.3 62 IRFB7446PbF
60 195 2.0 274 IRFB7530PbF
TO-247 40 195 1.3 300 IRFP7430PbF
For more information call +49 (0) 6102 884 311

or visit us at www.irf.com THE POWER MANAGEMENT LEADER

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ISSN: 1863-5598 ZKZ 64717

Electronics in Motion and Conversion December 2014

VARIS™ – the modular inverter system

● IGBT classes: 1200 V or 1700 V, up to 1400 A

GvA Leistungselektronik GmbH | Boehringer Straße 10 - 12 | D-68307 Mannheim

Superior Solutions for

News ............................................................................................ 6-12

Guest Editorial ................................................................................ 16

Market ........................................................................................ 20-21

Technology Driving Markets .................................................... 22-23

Cover Story ............................................................................... 24-28

Design and Simulation ............................................................. 30-33

Test and Measurement ............................................................. 48-49

2 Bodo´s Power Systems® December 2014 www.bodospower.com

THE SIMULATION SOFTWARE PREFERRED

MODELING DOMAINS KEY FEATURES

The Boxes are Open

Printing by: Communication is the only way to prog-

4 Bodo´s Power Systems® December 2014 www.bodospower.com

www.lem.com At the heart of power electronics.

Small and Medium Wind Systems – Microgrids and Minigrids

SEMICON Europa 2014 Brings the Supply-Chain Closer Together

EPE 2015 ECCE Europe is Approaching fast

Working with Intel to Enable a Wire-Free World

6 Bodo´s Power Systems® December 2014 www.bodospower.com

Synapse Design launches Power Saving Cloud Computing Platform

Architects of Modern Power Consortium Select

8 Bodo´s Power Systems® December 2014 www.bodospower.com

 Pre-applied to Infineon Modules 100

Opening the new RECOM Company Headquarter

New Application Lab in Korea

ECPE Calendar of Events 2015

10 Bodo´s Power Systems® December 2014 www.bodospower.com

Energy Conversion Congress and Exposition

Design a Custom Electric Motor Drive using COTS Components

Hitachi Europe Limited,

www.bodospower.com December 2014 Bodo´s Power Systems® 11

Web-based Automotive Electronics Solutions Interface to

Comprehensive Suite of Solution for Lighting Applications

12 Bodo´s Power Systems® December 2014 www.bodospower.com

Win a PICDEM LCD 2

14 Bodo´s Power Systems® December 2014 www.bodospower.com

Flexible solution supports designs with or without micro or DSP

Existing Solution Allegro Solution

Reduces PCB by 75%

Youthful Power Electronics

16 Bodo´s Power Systems® December 2014 www.bodospower.com

The Power to Succeed

Products Current/A Voltage/V

Electronics Industry Digest

18 Bodo´s Power Systems® December 2014 www.bodospower.com

About the role About you

We look forward to receiving your application, Contact: Matthias Engel

Developments in the AC-DC

20 Bodo´s Power Systems® December 2014 www.bodospower.com

But this is just the beginning.

Transforming the Machine Interface

Projects are already underway to include “3D Awareness” in our cell

22 Bodo´s Power Systems® December 2014 www.bodospower.com

Pre-applied to Infineon Modules 100

www.bodospower.com December 2014 Bodo´s Power Systems® 11

Software tools for product selection

On-site Design-In consultations

IC reference designs

www.bodospower.com December 2014 Bodo´s Power Systems® 23

MV IGBT DC switches

www.bodospower.com December 2014 Bodo´s Power Systems® 33

www.bodospower.com December 2014 Bodo´s Power Systems® 39

www.bodospower.com December 2014 Bodo´s Power Systems® 43