BP 2017 04

ISSN: 1863-5598 ZKZ 64717
04-17
Electronics in Motion and Conversion April 2017

WELCOME TO THE HOUSE OF COMPETENCE
ENGINEERING PRODUCTION GvA SOLUTIONS DISTRIBUTION
DISTRIBUTION
POWER IS IN OUR NATURE!

With selected partners, we put all of our energy in the optimum distribution of power
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Comprehensive portfolio of power semiconductors, IGBT drivers, air and liquid coolers,
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Boehringer Straße 10 - 12
D-68307 Mannheim
Phone +49 (0) 621/7 89 92-0

info@gva-leistungselektronik.de
www.gva-leistungselektronik.de
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Viewpoint............................................................................................ 4 IGBT Modules ........................................................................... 28-30

Cape Canaveral Alligators Evaluating the Effect of High Switching Frequency on the Perfor-
mance of an Active Front End Converter Results in Efficiency of
Events................................................................................................ 4 98.5%
By Jon Woodhead, Converter Technology Ltd, Pangbourne, UK
News............................................................................................. 6-12
Protection .................................................................................. 34-37
Blue Product of the Month............................................................. 14
Essential Overvoltage Protection
Auxiliary Power Supply Evaluation Board for SiC MOSFET
By Bettina Renz, Dipl.-Ing. (FH), PMM, Piezo and Protection Devices,
By Richardson / Wolfspeed
Multilayer Components, TDK
Guest Editorial................................................................................. 16
Intelligent Power ....................................................................... 38-40
The dark Side of the Internet
IPM Solution for Low Rated Power Application
By Henning Wriedt, correspondent editor Bodo’s Power Systems
By Simon Kim & Pengwei Sun, Infineon Technologies, Korea & USA
Cover Story................................................................................ 18-22
Design and Simulation ............................................................. 42-44
A New Family of Miniature, Fast and Accurate Transducers for Iso-
Configurable Mixed-signal ICs and Asynchronous State Machines
lated Current Measurement
Can Optimize Embedded Designs
By David Jobling, David Barbagallo and Julien Feignon,
By Mike Noonen, John McDonald and Nathan John,
LEM International SA
Silego Technology Inc.
IGBT Modules ........................................................................... 24-27
New Products............................................................................ 46-64
A Practical Study on Three-Level Hybrid SiC/Si Inverters
By Fabio Brucchi, Infineon Technologies Italia S.r.l. and
Klaus Sobe and Davide Chiola, Infineon Technologies Austria AG
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The Gallery
2 Bodo´s Power Systems® April 2017 www.bodospower.com

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VIEWPOINT
CONTENT
Cape Canaveral
A Media
Katzbek 17a Alligators,
D-24235 Laboe, Germany
Phone: +49 4343 42 17 90 As a little boy I was fascinated to watch
Fax: +49 4343 42 17 89 black and white TV and see men land on
editor@bodospower.com the moon. It was far out in my imagination –
www.bodospower.com indeed many people had trouble believing it.
Publishing Editor At that age, I was happy with my electric toy
Bodo Arlt, Dipl.-Ing. train. Many years later I visited Melbourne
editor@bodospower.com
Florida frequently, as I worked at marketing
Junior Editor
Holger Moscheik and applications for Harris Power Products. I
Phone + 49 4343 428 5017 was again fascinated to see the Space Shut-
holger@bodospower.com tle rising above Cape Canaveral. And for the The Apollo Space program is history, but my
Senior Editor first time I saw wild Alligators, Wildlife and grandchildren are still fascinated to play with
Donald E. Burke, BSEE, Dr. Sc(hc) Technology were in a precarious balance. my trains, now 55 years old. Electric motors
don@bodospower.com have not changed too much in principal, but
UK Support Now, back in Tampa for APEC, I realize are they are more efficient. And in the 90’s I
June Hulme that much of Space activity is history: no provided Marklin little MOSFETs that helped
Phone: +44(0) 1270 872315 Apollo missions since 1972, 45 years ago. digitize the control of their locomotives. So
junehulme@geminimarketing.co.uk
At that time I was a student just getting into toys too joined the electronics world, without
Creative Direction & Production
electronics. By now, innovations in electron- waiting for “Industry 4.0”. It is always good to
Repro Studio Peschke
ics have changed the world. Microcomputers play around with toys and foster young minds
Repro.Peschke@t-online.de
have entered so many aspects of handling for the next innovation.
Free Subscription to qualified readers
functionality. There was the IGBT invention of
Bodo´s Power Systems
is available for the following Wheatley and Becke, that enabled efficient, Bodo’s Power Systems reaches readers
subscription charges: variable-speed, motor drives. Now most across the globe. If you are using any kind
Annual charge (12 issues) semiconductor vendors for Power Electronics of tablet or smart phone, you will now find
is 150 € world wide have IGBTs in their portfolio. All that hap- all of our content on the new website www.
Single issue is 18 €
subscription@bodospower.com pened with conventionally silicon designs. eepower.com. If you speak the language, or
But now we have wide band gap devices in just want to have a look, don’t miss our Chi-
circulation print run 24 000 SiC and GaN taking over. nese version: www.bodospowerchina.com
Printing by: It was nice to have a great time in sunny My Green Power Tip for April:
Brühlsche Universitätsdruckerei GmbH Florida and to see all my friends at APEC Don’t feed the Alligators, they can run faster
& Co KG; 35396 Gießen, Germany
- working together on progress for a better than you, so stay away. They like to eat
A Media and Bodos Power Systems
world. Reducing losses and thus atmospher- whatever they can catch. We still may need
assume and hereby disclaim any
liability to any person for any loss or ic emissions is important if we are to hand your expertise for Power Electronics.
damage by errors or omissions in the over to our Kids a world that is safe to live in.
material contained herein regardless Our grandchildren should be proud of what Best Regards
of whether such errors result from we did for their future. The entire world must
negligence accident or any other cause be great - if there is an imbalance, there will
whatsoever. always be conflicts.
Events
Internat. Power Workshop on Packaging PCIM Europe 2017 PCIM Asia 2017
Delft, The Netherlands, April 5-7 Nuremberg, Germany, May 16-18 Shanghai, China, June 27-29
http://iwipp.org/ http://www.mesago.de/en/PCIM/home.htm http://www.mesago.de/en/PCC/home.htm
ETG Bauelemente der Leistungselektronik ISiCPEAW 2017 SEMICON West 2017

Bad Nauheim, Ger., April 6-7 Stockholm, Sweden, May 21-23 San Francisco, July 11-13
http://conference.vde.com/be2017 mietek.bakowski@acreo.se http://www.semiconwest.org/
ExpoElectronica 2017 Sensor + Test 2017 EPE ECCE 2017

Moscow Russia, April 25-27, Nuremberg, Germany, May 30 June1 Warsaw, Poland, September 11-14
http://expoelectronica.primexpo.ru/en/ http://www.sensor-test.com/press http://www.epe2017.com/
SMT Hybrid 2017 Intersolar 2017 HusumWind 2017

Nuremberg, Germany, May 16-18 Munich, Germany, May 31 June 2 Husum, Germany, September 12-15
http://www.mesago.de/en/SMT/home.htm www.intersolar.de/de/intersolar-europe.html www.husumwind.com

Made for Digital by LEM
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• 12 bits effective resolution with a 20 kHz bandwidth
• LVDS & 4-wire differential outputs coming soon
www.lem.com At the heart of power electronics.

CONTENT
NEWS
Prof. Dr. Leo Lorenz honored with Dr. HC of Valencia University

The ceremony took place on Febru- advanced systems of the engineering of the future.
ary 17th in the historical building of Doctor Lorenz is well known in the industry for power semiconductors.
the University of Valencia in Spain. More than 400 publications in magazines and conferences, more than
It is a special honor for his contribu- 50 key note presentations have been contributed and more than 50
tion in power electronics over several international patents are registered by him.
decades. The University of Valencia
started its operation in 1499 with www.ecpe.org
Humane Science and is today a
full scale University with more than
40.000 Students.
Leo Lorenz is an honorary professor
of the Ilmenau University in Germany
and Tsinghua University of Taiwan in
addition to several Adjunct Profes-
sorships at first class level Chinese Universities. As member of the
Chinese Foreign Senior Fellow Program and German Academy of
Science, he acted as a governmental technology consultant in Eu-
rope, the United States, Japan and China. Leo Lorenz started as an
engineer from the Technical University of Berlin and his doctor degree
is from the University of Defense in Munich Germany. His professional
carrier started in the R&D Department of Power Electronics of AEG,
Senior Director for the Power Semiconductors Division of Siemens,
Senior Principal in Infineon Technologies, whose general direction
is currently advised by him in the field of power semiconductors and
Dr.-Ing. Frank Osterwald is appointed to be

Honorary Professor of University of Applied Sciences Kiel
Prof. Dr.-Ing. Frank Osterwald is Director Research at Danfoss Silicon
Power GmbH in Flensburg, Germany. Picture:
Since eleven years Frank Osterwald is strongly involved in power Prof. Dr.- Ing. Frank
electronics research and development in the institute of Mechatron- Osterwald (left) and
ics at the faculty of Computer Science and Electrical Engineering of Prof. Dr. Udo Beer,
University of Applied Sciences Kiel. With his knowledge of Microsys- President FH Kiel,
tems as well as of power packaging & interconnection technologies University of Applied
he has been supporting research and teaching at the University. He Science (right).
had been the door opener for a number of funded research projects Picture by Matthias Pilch
involving local as well as international partners. A broad range of
students have been benefitting from his activities and numerous Center of the University. About 30 master graduates from the Univer-
Bachelor, Master and Diploma theses have been resulting from the sity have had the chance to start their professional career at Danfoss
cooperation between the University and Danfoss Silicon Power. Silicon Power. The close link between applied research and profes-
Prof. Osterwald has been a member of the PhD committee of one of sional education is characteristic for the long term co-work between
the PhD’s from the institute of Mechatronics. Currently, he is the men- the University and Prof. Osterwald.
tor for two more PhD students in Kiel.
His particular focus was on the transfer of technology from the Uni-
www.fh-kiel.de
versity to Danfoss Silicon Power, which Frank Osterwald was driving
together with the Technology Transfer Center as well as with the R&D
www.siliconpower.danfoss.com
6th Power Analysis & Design Symposium

Symposium: April 26th, 2017 / 08:30 - 17:00 want, have a beer, bring your power supplies and do some great
With lectures, practical examples and demonstrations presented by measurements with us.
international power supply experts from: Biricha Digital, Microchip The participation in our symposium is free of charge and includes
Technology, IDT, Kemet and Rohde & Schwarz. lunch and refreshments during breaks. The Symposium and the Open
Advanced Characterization, Simulation and Troubleshooting of Elec- Lab take place at: Bürgerhaus Eching, Roßbergerstraße 6, 85386
tronic Power Systems in Eching (near Munich), Germanytch Eching (near Munich), Germany. Please register online until April
Open Lab: April 25th, 2017 / 15:00 - 19:00t trends in 11th, 2017.
Join our Open Lab after your daily work is done. We will have several Visit us at PCIM Europe in Hall 6 booth 244
measurement benches ready for you, where we can measure loop
stability, PSRR, output impedance and more. Come whenever you www.omicron-lab.com/event

SMALLER
STRONGER
FASTER
Wireless Power Design Kit

Qi Medium Power compliant
ROHM Semiconductor and Würth Elektronik developed a plug & play wireless power solution to
demonstrate the advantages of wireless power. This gives you the opportunity to test and integrate
a wireless power solution into your product design.
Key Components:
BD57020MWV: Wireless Power Transmitter IC
BD57015GWL: Wireless Power Receiver IC
ML610Q772-B03: Microcontroller for MP
Main Features: Applications:

• Plug & Play Medium Power (15 W) • Portable devices used in a clean area,
Wireless Power Design Kit where connectors pose a risk of polluting
• Compliant with Qi Standard of the Wireless e.g. medical facilities and (industrial)
Power Consortium (WPC) clean rooms
• Complete solution consisting of Tx, Rx and • Devices with a large number of mating
LED Load module cycles to avoid connector damage
• Flexible and modular approach for fast • Headsets
integration of wireless power in your • Battery operating portable devices
product design • Smartphones, Tablets
www.rohm.com/eu
CONTENT
NEWS
Final Regulatory Approval for Renesas’ Acquisition of Intersil

Renesas Electronics Corporation, a premier supplier of advanced received and the merger is expected to close on February 24, 2017
semiconductor solutions, and Intersil Corporation, a leading provider PST, subject to customary closing deliveries. Intersil stockholders
of innovative power management and precision analog solutions, an- have previously voted to adopt the merger agreement and approve
nounced that they received notification by the Committee on Foreign the transaction at a special meeting of stockholders held on Decem-
Investment in the United States on February 21, 2017 PST; February ber 8, 2016.
22, 2017 JST that the investigation of the merger transaction under
which Renesas will acquire Intersil is complete and that there are no www.renesas.com
unresolved national security concerns with respect to the transaction.
All necessary regulatory approvals for the acquisition have now been www.intersil.com
Small Wind & Solar Hybrid Systems - Key to a Self-Sufficient Energy Future
The World Wind Energy Association (WWEA) and Intersolar Europe The main theme of the conference is Small Wind & Solar Hybrid
are pleased to invite the small and medium wind stakeholders as well Systems - Key to a self-sufficient energy future. The conference is
as the Solar PV and Energy Storage industry to participate in the aimed at jointly exploring the current status and future developments
World Small Wind Conference (WSWC2017), taking place in Munich/ of the wind & solar hybrid technology as well as to present new
Germany on 1 and 2 June 2017, in parallel with the Intersolar Europe innovative business models that could exploit the market of self-
exhibition 2017 (31 May - 2 June 2017). supply electricity.
Participants from over 30 countries gathered in each of the seven in- Abstracts are invited on issues within the scope of the topic of the
ternationals small wind conferences organised by WWEA in previous conference:
years - including top small wind manufacturers, representatives from
international organisations like IRENA, national small wind associa-
tions, members of the academia and consumers. www.small-wind.org
Announcing Collaboration Sales in Japan

ROHM and SEMIKRON will kick-off collaboration sales of SiC power ROHM has been a leading developer of advanced Silicon Carbide
devices and modules, to contribute to the innovative evolution of the (SiC) products and SiC power devices in particular. It was the first
Japanese power electronics market. company in the world to manufacture the SiC MOSFET in 2010 and
offers SiC Schottky diodes as well. The wide range of ROHM SiC
chips is suitable for an easy module integration.
SEMIKRON is one of the market leaders in power modules, covering
a wide range of packages for all applications. It is well known for its
cutting edge packaging technology that has set standards in power
electronics. SEMIKRON offers SiC modules in six different packages
covering 20A to 600A, which are widely used in the world-wide power
electronics market, enabling energy savings in various applications.
Both companies together will synergize their joint knowledge (about
Device, Control and Module technology) in the approach to the Japa-
nese power electronics market, offering the perfect power solution.
Both companies will collaborate to widen the SiC power module line-
up and contribute to energy saving and miniaturization.
Photo: (left to right) Erwin Ysewijn, Managing Directror SEMIKRON www.rohm.com/eu

Japan; Mr. Kazuhide Ino (Ph.Doctor), General Manager Power Device
Division, ROHM Co.,Ltd. www.semikron.com
Respect for Journalists

Visit us at PCIM Europe
May 16 – 18, 2017
Booth 9-406
POWERFUL PRODUCTS
FOR POWER ELECTRONICS
High performance materials

and components for converting,
controlling and distributing power
NEW Explore the

curamik® ADVANTAGE
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CONTENT
NEWS
Power Inductors and Capacitors Featured in Module Solutions

Wurth Electronics power inductors and capacitors are now featured in MPS’s open-frame modules provide easy-to-use, plug & play power
Monolithic Power Systems, Inc. Plug & Play Power Module Solutions. solutions with pre-programmed output voltage options available. Us-
ing proprietary technology processes, MPS’s mEZ products provide
simple, high efficiency power solutions for DC/DC step down, step
up, PoE, and USB charger applications. Customers can choose from
ready-to-use products or ‘Do It Yourself’ solutions to build custom-
ized modules. All design files, including schematic, layout, and bill of
materials are provided.
Learn more about these products at the Wurth Electronics Booth #811
at APEC 2017, in Tampa, FL. Yi Sun, MPS Module Product Line Man-
ager, will conduct a free presentation Monday, March 27 at 7:00 pm
and Tuesday, March 28 at 1:00 pm. For a full schedule, visit www.we-
online.com/apec. For more information about MPS’s mEZ products,
email MEZsupport@monolithicpower.com
www.we-online.com/apec
Welcoming Twining as Vice President, Marketing

Indium Corporation has hired Tim Twining Twining earned a bachelor’s degree in Mechanical Engineering from
as the company’s new Vice President, the University of Minnesota and an MBA with a concentration in
Marketing. finance from the University of St. Thomas in Minneapolis, Minn.
Twining is responsible for leading the de-
velopment, implementation, and oversight
of Indium Corporation’s market strategies.
Twining has extensive global sales
and marketing experience in industrial,
business-to-business, and manufacturing www.indium.com
environments. As part of his extensive ca-
reer, he has lived and worked in England,
Russia, Singapore, and the USA.
Reference
Batterie-TechnologieWork on Battery Technology by Sven Bauer
Das Standardwerk zur
No matter whether they’re used in the strongly characterised by dynamism and innovation. Increases in
automotive sector, electric bicycles, capacity are taking place almost every six months in lithium battery
tools, energy networks, or industrial technology, and noticeable technological leaps occur roughly once a
manufacturing: batteries play an ever year. We can assume that numerous new markets will develop over
growing role in our society, and are the next few years where lithium battery technology can be success-
JETZT
bestellen!
at the heart of many different devices ful: The potential for this technology is substantial.
m and systems. They make mobile With his book “AkkuWelt” (Battery World), Sven Bauer, Managing
applications possible and drive inno- Director of the BMZ Group, is publishing a reference text that will be-
___ Exemplare des
htig zum Preis von
St.).
vation on all technologically-oriented come the new standard work for battery technology. The author com-
Auch als
markets. Only reliable energy storage municates basic knowledge on battery engineering using state of the
k
eBooich
erhältl systems that are lightweight and art technology, offering an overview of the development, construction,
equipped with high storage capaci- and use of batteries. Bauer is able to base his work on his exclusive
ties make it possible to use drones knowledge as an industry leader and key innovator.
or other self-guiding robotic units, for
instance. susanne.kaschub@bmz-group.com
t
The development of electrochemi-
Sven Bauer cal energy storage systems is a field
AkkuWelt
Freedom for Journalists

Broadcom Optocouplers
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“Broadcom” refers to Broadcom Limited and/or its subsidiaries. For more information, please visit www.broadcom.com.
BC-0473EN 02.06.17
CONTENT
NEWS
ICT Announce the Acquisition of CS&E

ICT Power USA, located in Saint Charles, Illinois is pleased to an- / Iconopower sales team have over one hundred years of technical
nounce the acquisition of Capacitor Sales and Engineering (CS&E) sales experience in AC/DC power capacitors and other power conver-
of Sarasota, Florida. CS&E is a stocking distributor of motor run and sion components and applications.
motor start capacitors manufactured by Ducati Energia (Italy) & Yi- The New Company will operate under the name “Capacitor Sales and
Card (Taiwan). Engineered Products“ and operations have been transferred to ICT
ICT Power USA and its sister company Iconopower Limited (both Power USA’s facility in Saint Charles, Illinois.
subsidiaries of the PECAS group of companies) have represented ICT Power USA looks forward to assisting you with all your Power
Ducati Energia for more than twenty years, focusing on their AC & DC Conversion and Control needs.
power electronic capacitor product range. We are pleased to have the Ray Ragonese – National Sales Manager, ICT Power USA
opportunity to expand the Ducati product offering to now include their
high quality motor run and motor start capacitors. Collectively, the ICT ray.ragonese@ictpowerusa.com
Call for Papers for the first Passive Component Networking

Days Symposium
The European Passive Components Institute The aim of the PCNS event is to promote discussion of recent devel-
(EPCI) is pleased to announce a Call for opments and trends and to encourage the exchange of technical ex-
Papers for the first Passive Component pertise and information covering a broad range of passive electronic
Networking Days Symposium (PCNS) jointly components. The PCNS proceedings will be ISBN-listed to validate
organised together with Technical Univer- the published papers. The papers presented will be also recom-
sity of Brno on Sep 12-15th in Brno, Czech mended to relevant magazines for publication in order to encourage
Republic. the active participation of universities.
Passive components represent more than 80% of the parts used on Hardware engineers, field application engineers, component engi-
a PCB. Therefore, they are one of key elements of electronic design. neers, procurement specialists and all other participants interested in
PCNS is a European technical conference that is totally dedicated to passive components will also have a chance to attend one of the pre-
Passive Components. It is an exceptional opportunity to learn more event four hour capacitor, resistor or inductor seminars - from basics
about the latest advances in this field and meet recognized interna- down to the depth of the technology. Abstract submission is open
tional experts from industry, academia and other agencies/organisa- online at the conference website. Deadline is 2nd April 2017.
tions.
www.passive-components.eu/pcns
ECPE Tutorials and Workshops in 2017

• ECPE Tutorial ‘Power Semiconductor Devices & Technologies’ • ECPE Tutorial ‘Thermal Engineering of Power Electronic
26 - 27 April 2017, Berlin, Germany Systems - Part I (Thermal Design and Verification)’
Chairmen: Dr. A. Mauder (Infineon), 18 - 19 July 2017, Erlangen, Germany
Prof. D. Silber (Univ. of Bremen) Chairmen: Prof. U. Scheuermann (Semikron), D
. Malipaard (Fraunhofer IISB)
• ECPE Workshop ‘EMC in Power Electronics: From Harmonics
to MHz - Design for EMC and Fast Switching’ • ECPE Tutorial ‘Thermal Engineering of Power Electronic
3 - 4 May 2017, Berlin, Germany Systems - Part II (Thermal Management and Reliability)’
Chairmen: Prof. E. Hoene (Fraunhofer IZM), 10 - 11 October 2017, Nuremberg, Germany
Dr. L. Dalessandro (Schaffner Group) Chairmen: Prof. E. Wolfgang (ECPE),
Prof. U. Scheuermann (Semikron)
• ECPE Tutorial ‘Power Electronics Packaging’
21 - 22 June 2017, Würzburg, Germany • ECPE Tutorial ‘Power Circuits for Clean Switching and Low
Chairmen: Prof. U. Scheuermann (Semikron), Losses’
Dr. J. Popvic-Gerber (TU Delft) 8 November 2017, Aalborg, Denmark
Chairman: Dr. R. Bayerer (Infineon)
• ECPE Workshop ‘Condition and Health Monitoring in Power
Electronics’
4 - 5 July 2017, Aalborg, Denmark www.ecpe.org
Chairmen: Prof. F. Blaabjerg (Aalborg University), Dr. S. Mollov
(Mitsubishi Electric R&D Centre EUROPE), Dr. A. Rojko (ECPE)
Respect Free Press

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9-22
9-203 9-209 9-221 9-237 9-239 9-241 9-243
1 9-204 9-210 9-214 9-220 9-224 9-230 9-232 9-234 9-238 9-242 9-248 9-254
9-20
Heat and liquid flow simulations

9-133
6
9-25
2
5
●
9-12
9-10
9-131
TECNOAL
9-164
9-115 9-119 9-135 9-141 9-147 9-153 9-155
9-106 9-110 9-112 9-116 9-120 9-124 9-140 9-144 9-146 9-150 9-154 9-156 9-160
PCIM Europe 2017

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BLUE
CONTENT
PRODUCT OF THE MONTH
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GUEST
CONTENT
EDITORIAL
The dark Side of the Internet

It is still a common belief, that modern Countless companies and individuals are tricked into handing over
electronics and the Internet make our their valuables and important information. I even have to think about
daily life more comfortable and safer. the worldwide online industrial espionage, which is almost untrace-
Online banking, email, social networks able.
and endless search opportunities on
the Internet eliminate paper checks, Does your company store all its data in the cloud? How secure is
letters and faxes and offer us huge this? I hope you know where the servers are, how they are protected
amounts of knowledge and connec- against physical and cyberattacks and also against unauthorized ac-
tions. But that’s only one part of our cess within the hosting company. Due to a simple typo by a program-
modern life. mer, a major cloud storage provider stopped serving his clients for
hours. If you were one of those clients, is your company finished after
Computer viruses, Trojan utilities and such an incident?
lately ransomware and the theft of
millions of consumer data are not only
reducing our productivity but costs us already a huge pile of money
and lost time. If you are not subscribed to the newsletter of Brian
Krebs (https://www.krebsonsecurity.com) please subscribe. It is an
eye opener. Brian is a wellknown expert regarding cybercrime and
cybersecurity. Just read his recent intro about ransomware:
“Among today’s fastest-growing cybercrime epidemics is “ransom-

ware,” malicious software that encrypts all of your computer files,
photos, music and documents and then demands payment in Bitcoin
to recover access to the files. A big reason for the steep increase in
ransomware attacks in recent years comes from the proliferation of
point-and-click tools sold in the cybercrime underground that make it
stupid simple for anyone to begin extorting others for money.” Northeast Blackout
How many have paid and how many victims didn’t get the promised You may recall the blackout in August 2003, which hit a major part of
key for decryption? Don’t forget, we have to deal with criminals. the northeast of the U.S. and Canada (see picture). Most customers
got their power back after six hours or so, people in remote areas
A few days ago, the ‘Wall Street Journal’ reported about a “Hack” by were waiting almost two days.
a 18 year old student, who created a link to a certain website, where
all his followers of his social network infected their iPhones with a According to reports, the main cause was a software bug in the alarm
software routine, which caused on these smartphones endless calls system at a control room in Ohio. Today I ask: Was it really a random
to 911. freaking software failure? And when you look at this picture, how
much damage, lost business and extra costs did this outage cause?
This kind of cyberattack spread fast to more than 12 U.S. states. It
took IT specialists more than half a day to stop this attack. If convict- Experts agree, that the next outage disaster with a failing electricity
ed, the student faces more than 10 years in prison. According to this grid could strike a whole country with unimaginable consequences.
report, the teenager learned about this tool from a video on YouTube. I’m very concerned about such a case, because news reports sug-
And the damage had been done very easily. gest, that those networks are not sufficient secured against cyberat-
tacks.
But this case is not closed yet, since this incident (I hope nobody suf-
fered through those hours) and countless other attacks show clearly, Just imagine, that everybody can buy a ‘ready-to-go’ script kit on the
that our societies are still too complacent regarding online security. dark Internet and ruin your day, your finances and your company.
Some time ago law enforcement people placed several memory My wish: Please stay alert all time in private and on the job - and don’t
sticks in a parking lot of a company. Almost 80 per cent of the sticks underestimate these threats. We all already paid dearly.
were picked up by employees, who just out of curiosity inserted those
sticks into their computers. The IT people of that company were able Wish you well
to trace those prepared sticks. Beside phishing for IDs and passwords
with emails, those attacks by memory sticks are unfortunately very
successful.

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COVER
CONTENT
STORY
A New Family of Miniature, Fast

and Accurate Transducers for
Isolated Current Measurement
The design of isolated current transducers has been continuously driven by cost and size
reduction. Continuing this trend, a new family of transducers needing no magnetic circuit
has been introduced in standard small-outline integrated circuit packages. Careful design
results in their accuracy being similar to those of conventional transducers with only a
modest reduction in isolation voltage. Some extra features have been added.
By David Jobling, David Barbagallo and Julien Feignon, LEM International SA
Plan-les-Ouates, Geneva, Switzerland
Introduction new ASIC derived from that used in conventional transducers. Figure
Current transducers in which isolation is required generally detect 1 shows two such examples. One is in an SOIC-8 package and the 4
the magnetic field of the measured current; this has the additional secondary-side pins are for the supplies, the output voltage Vout and
advantage of allowing both AC and DC currents to be measured. a reference voltage Vref. The other is in an SOIC-16 package where
There have been two aspects to the trend in LEM open-loop current 8 secondary pins are available so the opportunity has been taken to
transducers in recent years: cost and size have been continuously re- provide two different Over-Current Detect (OCD) warning levels; one
duced, and by using custom proprietary CMOS ASICs as the sensing very fast, and the other slower but more accurate. The speed and ac-
element the performance parameters such as accuracy and response curacy of the GO transducers are very similar to those of a transducer
time approach those of more complex closed-loop transducers (Ref with a magnetic circuit. The absence of a magnetic circuit of course
1). Usually the ASIC is placed in the air gap of a small magnetic circuit means that there is zero magnetic offset.
which gives noise-free amplification of the field and screening from
external interference. Most of LEM’s conventional open loop transduc- Architecture and features
ers measure currents in the range of 3 A to 100’s of A, isolation levels The GO transducer ASIC is derived from that used in LEM open-loop
are up to 8 kV and the response time from 2 us. transducers which have a magnetic circuit. There is considerable
production experience with this ASIC, which has allowed introduction
Some applications, particularly for motor drives, have the same need of some extra features around the well-known signal path blocks. In
for speed but are less demanding of the current range and isolation this section the design of the GO transducer is described and some
levels while having strong pressure on price. In applications such as contrasts are made with magnetic circuit transducers.
for example white-goods, window shutters and air-conditioning low
cost and small size are particularly important. For these cases LEM
has now introduced an additional family of sensors, the “GO” fam-
ily, whose size is reduced even further by eliminating the magnetic
circuit. Instead, the primary current is passed directly into a standard
integrated circuit package where its magnetic field is measured by a
Figure 2: Block diagram of a GO transducer in an SOIC-16 package
Figure 2 shows a simplified block diagram of a GO transducer in a

16-pin package. Multiple Hall cells implanted in the ASIC are placed
on both sides of the primary current to detect its magnetic field. Their
Figure 1: The GO series transducers and their pin connections in offset, together with that of the input amplifiers, is eliminated with
SOIC-8 and SOIC-16 packages chopping techniques which modulate the Hall cell output to an AC

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COVER
CONTENT
STORY
signal. After amplification the Hall signal is demodulated back to its OCDs from several transducers to be connected together. OCD_INT
original frequency before buffering and filtering at the output. The fast triggers in less than 2.1 us; the typical response time of OCD_EXT is
response time is achieved by using a high chopping frequency and 10 us.
internal filters which reduce the noise bandwidth of the system.
The footprint of a GO series transducer in a 16-pin package is about
During production each transducer is individually calibrated. Tests 100 mm2, and in an 8-pin package it is half of this. The correspond-
are done at 3 temperatures; the drifts of sensitivity and output offset ing value for the smallest PCB-mounted transducer with a magnetic
are measured and corrections stored in an EEPROM memory on the circuit is about 400 mm2. The heights are 2.5 mm and 12 mm
ASIC; this ensures that the transducer accuracy is maintained over respectively. However, for both types, in the higher current ranges
temperature and aging. some allowance must be made for dissipation of the heat generated
in the transducer primary, which is greater in the GO series since the
The ASIC is separated from the primary conductor by a series of primary resistance is higher.
insulating layers – an optimum separation has been chosen for the Parameter GO transducers Magnetic circuit
best compromise between highest isolation with a wide separation based transduc-
and highest magnetic field at the Hall cells with lower separation. The ers
Hall cells on opposite sides of the primary are sensitive to fields in
opposite directions so the transducer is immune to uniform magnetic
fields from sources other than the measured current. The exact lateral
position of the Hall cells relative to the primary is not critical, since
the difference between the outputs of the cells on the opposite sides
is used. In other words, the Hall cells are configured as a gradient
sensor. Nominal current 4 A – 30 A 3 A – 50 A
range
Supply 3.3 V or 5 V; 19 mA 3.3 V or 5 V; 19 mA
External field im- Yes: gradient sensor Yes: magnetic
munity circuit screen
Insulation test, 3 kV 4.3 kV
50 Hz, 1 min
Impulse test 4 kV 8 kV
voltage, 50 us
Creepage, clear- SOIC-8: 4 mm; SOIC-16: >8 mm
ance distances 7 mm
Accuracy at 1.0% 1.0%
25°C
Figure 3: Block diagram of the Over-Current Detect (OCD) systems
Accuracy over 3.0% 3.4%
25 - 105°C
The detail of the OCD implementation is shown in figure 3. The aim
is to give two different levels of warning. The first level is for currents Primary resis- 0.7 mOhms 0.2 mOhms
slightly higher than expected, to warn for example that a drive current tance
is going out of the expected range. This OCD needs to be reasonably Out-of-range Yes, 10 us response time No
accurate, not especially fast, and each user may want to set a differ- detection
ent level. The relaxed speed requirement allows the input to this first Short-circuit Yes, 2.1 us response time Some models,
OCD to be taken from the transducer output, and the level is set by detection 2.1 us
user-chosen external resistors, hence its name, OCD_EXT.
Response time <2.5 us <2.5 us
The second level is intended to warn of currents which are danger- Offset drift (10 A 0.9 mA/K 0.9 mA/K
ously high, due to a short circuit for example. The response time must model)
be extremely fast, but the value and accuracy of the detection level Sensitivity drift 150 ppm/K 200 ppm/K
are not critical. To obtain a fast response time and to allow an OCD
Magnetic offset 0 0.25 A after 10x IPN
level outside the normal linear operating range the input to the second
OCD is taken before the demodulation block. Its level is set internally Footprint 50 – 100 mm2 400 mm2 or more
by storing a parameter internally in the EEPROM – so it is known as Height 2.5 mm 12 mm or more
OCD_INT. The level is typically set at 3x the nominal primary current, Table 1: Comparison of key parameters of GO series and magnetic
IPN. circuit based transducers
Figure 3 is slightly simplified: it omits the detail that ensures that both Key parameters and measured transducer performance
OCDs respond to both positive and negative over-currents. In Table 1 some of the key electrical parameters of the GO series
transducers are presented. For comparison, the values of the same
Both OCDs check that the over-current condition is present for at parameters for a small open-loop transducer with a magnetic circuit
least 1us approximately, to avoid false alarms, and both outputs, once are also given – a small transducer has been chosen to give the most
triggered, are maintained for 10us to be sure that the condition can meaningful comparison, a larger transducer would have different
be detected. The outputs are open-drain, which conveniently allows parameter values.

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COVER
CONTENT
STORY
Table 1 shows that many key electrical parameters have been inher- can be protected by small grounded screens on the top metal layer.
ited unchanged or slightly improved from the established sensors with Screening is used only over the small areas where it is needed. This
a magnetic circuit, whereas others, such as size and insulation, are has many advantages over large screens: the top metal layer remains
different, allowing the two transducer families to address quite differ- available for interconnect where screens are not needed; the ASIC
ent markets. die is not hidden and damaged parts can be analysed, and there are
no Eddy currents which would slow the response time.
Figure 4 shows a measured response time after a primary current
change in 0.3 us. The compact size and absence of magnetic compo-
nents in the transducer gives a response with very little overshoot and
ringing.
Figure 5: The effect of external conductors on the accuracy of a GO

transducer. The error is shown when the currents in the GO primary
and the external conductor are the same
Figure 6 shows the effect of a dv/dt of 5kV/us on the output of a 25 A

GO (GO 25-SMS). The peak disturbance on the output is 4% of IPN
and the recovery time is about 3.6 us.
Figure 4: Response time measurement of a GO transducer
The assertion made previously that the GO transducers are not dis-
turbed by external magnetic field will be true if the amplified electrical
output of the Hall cells from both sides is the same, since the differ-
ence between the two outputs is used. To satisfy this condition:
(i) The sensitivity of the Hall cells on both sides of the primary (and
the amplifiers to which they are connected) must be the same; that is,
they must be well matched;
Figure 6: Response of a GO transducer (GO 25-SMS) after a dv/dt
(ii) The magnetic field must be the same on both sides of the primary; disturbance
it must be uniform.
Conclusion
Considering point (i), because the Hall cells and the amplifiers are This article has introduced a new series of miniature, fast and ac-
made with large devices, their matching is excellent. When a uniform curate transducers for isolated measurement of AC and DC currents.
external magnetic field is applied to a GO transducer it is almost Some of their electrical parameters are similar to those of transducers
perfectly rejected. with magnetic circuits and others are altered. Different transducers
will be suited to different applications and the addition of this series
However, for point (ii) the magnetic fields generated by conductors to the LEM catalogue will extend system designers’ possibilities for
placed close to the transducer are not uniform and the outputs from optimizing their systems with the most efficient cost effective means
the two sides of the primary will not be perfectly rejected. This has of isolated current measurement.
been investigated for conductors placed in 4 different positions near
a GO transducer; see figure 5. The worst case is position 3 in which Reference
the external conductor is aligned with the GO primary. If the external David Jobling: New open-loop current transducers with near closed-
conductor carries 10 A and the measured current is also 10 A the loop performance. Proceedings of the PCIM Conference, May 2014,
transducer output error due to the external current will be only about page 222-6.
1% of the measured current even with zero distance between the
external conductor and the GO. This investigation shows that with a
minimum of care in the design of PCB layout, external conductors will Authors
have negligible influence on the accuracy of GO series transducers. David Jobling, David Barbagallo and Julien Feignon,
LEM International SA; Plan-les-Ouates, Geneva, Switzerland
Another important consideration in miniature transducers is the effect
of a sudden primary voltage change on the transducer output. This
is best handled at the ASIC level. Where internal signal levels are www.lem.com
small they are always differential, and changes in their common mode
level due to an external transient have little effect. Sensitive nodes

IGBT
CONTENT
MODULES
A Practical Study on Three-Level

Hybrid SiC/Si Inverters
In today’s PV, UPS and GPI systems, three-phase output inverters are often based on
three-level topologies using Silicon IGBTs. This article demonstrates the potential of a
hybrid inverter using CoolSiCTM MOSFETs and TRENCHSTOPTM 5 Silicon IGBTs.
By Fabio Brucchi, Infineon Technologies Italia S.r.l. and
Klaus Sobe and Davide Chiola, Infineon Technologies Austria AG
State of the Art Three-Level Inverter As explained in [2], [4] and [5], both three- together with the potential impact on applica-
Topologies level topologies have their advantages and tions. With the emerging SiC semiconductor
Three-level inverters based on Silicon IGBTs disadvantages. While T-Type inverters have technology the degrees of freedom for the
are a common design solution giving an ex- fewer semiconductor devices on the current designer become higher, opening the path to
cellent cost/performance ratio. As explained path and thus low conduction losses, I-Type new scenarios: fast 1200V SiC switches can
b) in [1]-[3], the technical advantage over the

classical two-level B6 inverter represented in
inverters benefit from lower switching losses
as there is no need for a relatively slow
make T-Type inverters attractive for higher
frequencies and even the transition back to
Figure 1.c)
Figure 1 (a) is a reduction of switching losses
and filtering effort, at the expenses of higher
higher voltage device. Consequently, T-Type
inverters are typically found at switching
a two-level solution might be considered in
order to achieve higher efficiency and reduce
circuit complexity. Two commonly found frequencies up to 20-30kHz, I-Type inverters the bill of material [6].
three-level designs in the low to mid power above.
range are the Neutral Point Clamping Diode In the following sections, the potential of a
and the Neutral Point Clamping Transistor SiC Technology Changes the Picture hybrid T-Type inverter using 1200V Cool-
topology, illustrated in figure 1 (b) and (c), The unique features of Silicon Carbide SiC™ MOSFETs and 650V TRENCHSTOP-
respectively. (SiC) switches were described in [7] and [8] TM 5 IGBTs is demonstrated experimentally.
The key benefits of this approach are low

conduction and switching losses, relatively
low effort for output and EMI filtering and –
compared to converters with more than three
levels – moderate control effort.
Test Setup and Conditions

Since this article considers the influence
of only the power semiconductors on the
system efficiency, all measurements were
carried out using a single phase test board
and a fixed L-C-L output filter designed
Figure 1: Commonly used inverter configurations: (a) two-level (B6, Six-Pack) inverter; (b) by Tecnologie Future S.r.l. and Infineon
three-level neutral point clamping diodes (NPC-1, I-Type) inverter; (c) three-level transistor Technologies Austria A.G. The design goals
Figure 2 links
clamped (NPC-2, T-Type) inverter; for each topology only one out of three phases
Figure is shown.
2 rechts for this platform were a simple component
Copyright © Infineon Technologies AG 2017. All rights reserved.

ht © Infineon Technologies AG 2017. All rights reserved. 1 2
2017-02-09 restricted Copyright © Infineon Technologies AG 2017. All rights reserved. 3
Figure 2: Single-phase test platforms in front and side view


䠀椀最栀倀漀眀攀爀
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䄀䌀䌀愀瀀愀挀椀琀漀爀
倀攀爀洀愀渀攀渀琀琀栀攀爀洀愀氀搀椀猀挀漀渀渀攀挀琀Ⰰ 瀀爀攀瘀攀渀琀椀渀最
挀愀琀愀猀琀爀漀瀀栀椀挀昀愀椀氀甀爀攀猀
伀瀀攀爀愀琀椀渀最吀攀洀瀀攀爀愀琀甀爀攀刀愀渀最攀㨀 ⴀ㐀　뀀䌀琀漀 ⬀㠀㔀뀀䌀
䐀爀礀 ǻ氀洀挀漀渀猀琀爀甀挀琀椀漀渀
嘀椀猀椀琀甀猀漀渀氀椀渀攀愀琀眀眀眀⸀攀挀椀挀愀瀀猀⸀挀漀洀
一漀爀琀栀䄀洀攀爀椀挀愀㨀猀愀氀攀猀䀀攀挀椀挀愀瀀猀⸀挀漀洀䔀甀爀漀瀀攀㨀猀愀氀攀猀䀀攀挀椀挀愀瀀猀⸀椀攀
IGBT
CONTENT
MODULES
replacement as well as an easy access for All devices were operated using an Infineon The loss distribution depicted in Figure 4 was
thermal and electrical measurements – not 1EDI60N12AF driver. This compact, isolated, estimated with an analytic calculation routine
a demonstration of power density or a BOM single channel driver is based on the core- and verified using chip and heat sink temper-
cost reduction. less transformer technology, featuring a high atures. Minor deviations were considered to
common mode transient immunity – a major be caused by a deviation of switching losses
It should be noted that the absolute efficiency requirement when dealing with high speed and corrected according to the experimental
values obtained with a single-phase system switches. The output voltage of the drivers is data. Calibration measurements to determine
do not correspond one-to-one to the values provided using a local HF transformer close the correlation of losses and temperatures
of a three-phase and three-wire system, i.e. to the driver that is fed from one resonant AC were done upfront.
a system without exposed neutral. First, the link. Using the turn-ratio of the transformer,
core losses of the filters are different and the gate voltages are set to +15V for turn-on The selection of the 1200V devices is based
second the modulation scheme cannot use a and -5V for turn-off. on the DC current rating of the data sheet.
Table 6 (“Hybrid 1” and “Hybrid
Table 62”)
(“Hybrid 1” and “Hybrid 2”)
Table 6 (“3L-IGBT”)
third-harmonic injection technique. The 650V switches were kept the same
throughout all tests: S5 IGBTs with a trade-
3L-IGBT 3L-Hybrid-1 3L-Hybrid-2 off of conduction and switching losses. For
the diode, a fast Si diode as well as a SiC
Circuit Schematics
T1 T1 T1
SBD – both with the same DC current rating
T4 T3 T4 T3 T4 T3
at 100°C case temperature – were selected.
T2 T2 T2 IGBT three-level solution: 3L-IGBT

As the three-level, pure silicon IGBT solu-
IKW40N120H3 IMW120R045T1 IMW120R045T1
T1/T2 tion can be considered state-of-the-art, it
1200V 40A Si IGBT (H3) 1200V 45mΩ CoolSiC™ MOSFET 1200V 45mΩ CoolSiC™ MOSFET
D1/D2
1200V 20A Si Diode serves as a benchmark within this article. As
T3/T4
IKW30N65ES5 IKW30N65ES5 IKW30N65_S5 + IDH16G65C5 depicted in figure 3, 4kW output power per
650V 30A Si IGBT (S5) 650V 30A Si IGBT (S5) 650V 30A Si IGBT (S5)
D3/D4
650V 30A Si Diode (Rapid 1) 650V 30A Si Diode (Rapid 1) 650V 16A SiC SBD (Gen 5)
phase and a peak efficiency of 98.5% were
fsw [kHz] 24
2017-02-09 restricted
24 48
24 48 7 AG 2017. All rights reserved.
Copyright © Infineon Technologies reached at a 7switching frequency of 24kHz. A
Pmax [kW](1) 4
5 4.2
6
5.5 5.2
slight increase of efficiency and output power
ηmax [%] (2) 98.5 99 98.5 99.1 98.8
could be achieved with a lower switching
re 3links (1) P
max refers to the output power that can be reached before exceeding 100 °C device temperature measured at thepackage case front side;
frequency, at the expenses of a larger filter to
(2) η
max refers to the maximum efficiency value that is reached. maintain the same ripple and EMI figures.
Table 1: Test scenarios and results for the single-phase test system at unity power factor
Hybrid three-level solution: 3L-Hybrid-1
The single phase inverter was A more efficient way of reducing the switch-
operated at a constant DC link ing losses is to replace the switches T1
voltage of 720VDC providing and T2 of the T-Type inverter by CoolSiC™
a voltage of 230VRMS on the MOSFETs, leading to the solution referred to
output. Using an electric AC as 3L-Hybrid-1. By keeping the same switch-
load the output current of the ing frequency of 24kHz the peak efficiency
inverter was increased in steps can be lifted by 0.5% and the output power
of 1,5ARMS every 5 minutes in can be increased by 25%. By doubling the
order to determine the conver- switching frequency the output filter’s size
re 3 rechts sion efficiency for different load and cost can be reduced by keeping the
situations. original IGBT efficiency line. This hybrid solu-
tion can be considered relatively balanced,
Test results since it is always one SiC and one Silicon
A summary of all measurement device involved in the commutation.
results can be found in Table 1.
For each scenario the circuit, the Hybrid three-level solution: 3L-Hybrid-2
devices under test, the switching A further performance improvement can be
frequency fsw as well as the reached by replacing the Silicon Rapid 1 di-
restricted Copyright © Infineon Technologies AG 2017. All rights reserved. 8
maximum achievable output odes D3/D4 with CoolSiC™ Schottky Barrier
power Pmax and efficiency ηmax Diodes (SBD), leading to the third solution
are given. 3L-Hybrid-2. Although the SiC diodes do
increase the conduction losses of D3/D4
Figure 3 shows the conversion by some watt, this is more than counterbal-
efficiency levels obtained as a anced by the savings in switching losses of
function of the output power at T1/T2 and D3/D4. Therefore, the benefits of
24kHz and 48kHz, respectively. this solution are increasing with the switching
Figure 3: Conversion efficiency as a function of output The efficiency values consider frequency. Apparently, a solution like that can
power for the single-phase test system at unity power factor the losses on the semiconduc- be optimized towards frequencies that are
tors and passives but not the even higher than the 48kHz shown above.
power required for control and
driving.
restricted Copyright © Infineon Technologies AG 2017. All rights reserved. 9
CONTENT
Summary and Conclusion 3-level NPC voltage link back-to-back

Results presented in this article demonstrate converter with SiC and Si diodes”, Proc.
that the use of SiC devices allows unprece- IEEE Appl. Power Electron. Conf., pp.
dented high degree of freedom in the design 1527-1533, 2010.
of a power electronic system. [4] M. Schweizer and J. W. Kolar, “Design
and implementation of a highly efficient
When high efficiency and output power are three-level T-type converter for low-
the main design goals, an existing three-level voltage applications”, IEEE Trans. Power
T-Type topology might be adapted by simply Electron., vol. 28, no. 2, pp. 899-907,
replacing Si IGBTs with SiC MOSFETs (“3L- 2013
Hybrid-1”) and maintaining a relatively low [5] R. M. Burkart, J. W. Kolar, and G. Gri-
switching frequency. epentrog, “Comprehensive Comparative
Evaluation of Single-and Multi-Stage
For system-cost optimization, the switching Three-Phase Power Converters for Pho-
frequency could be increased. In this case,
both hybrid solutions might be an option. The
tovoltaic Applications,” in Proc. INTELEC,
pp. 1-8, Oct. 2012. Cutting Edge Mini
selection will depend heavily on the efficiency
and power factor requirements as well as the
[6] R. M. Burkart and J. W. Kolar, “Compara-
tive evaluation of SiC and Si PV inverter
DC/DC Converter
trade-off between magnetic component cost systems based on power density and
reduction vs SiC component cost adder. efficiency as indicators of initial cost and R1SX: Fully automated 1 Watt
operating revenue”, vol. 23, no. 26, pp. 16
Acknowledgements [7] P. Friedrichs and M. Buschkühle, “The Fu-
power supply delivers stable
The Authors would like to warmly thank the ture of Power Semiconductors – Rugged performance & constant quality
Design House Tecnologie Future S.r.l., in the and Higher Performing Silicon Carbide
name of Dr. Giovanni Pace and Ing. Fabio Transistors” in Bodo’s Power, Apr. 2016, Embedded transformer allows
Figure 4)the great support and the impor-
Angeletti for pp. 2024
nearly 20% lower profile than
tant contribution to the implementation of the [8] M. Slawinski and M. Buschkühle, “Cool-
present project. SiCTM MOSFET – a Revolution to Rely
the industry standard
on” in Bodo’s Power, Oct. 2016, pp. 2426
More than 40x capacitive load
capability than the competition
(2200µF)
1 or 3kVDC/1 second galvanic

isolation for communication
protocols (eg. CAN bus)
Wide temperature range:

-40°C to +100°C @ full load
Figure 4: Distribution of the semiconductor losses in the single-phase test system at unity
power factor Industry standard SMD pinout
References
Authors: UL60950-1 & EN/IEC/UL62368-1
[1] M. Schweizer, I. Lizama, T. Friedli, and J. (pending)
Fabio Brucchi
Kolar, “Comparison of the Chip Area Us-
YEA R
3
Infineon, Technologies Italia S.r.l.,
agerestricted
of 2-level and 3-levelCopyright
Voltage Source 10
2017-02-09 © Infineon
Via dei Valtorta 48, 20127 - Milano - Italy
Technologies AG 2017. All rights reserved.
Converter Topologies,” in Proc. IECON

2010, Nov. 2010, pp. 391-396.
Klaus Sobe and Davide Chiola
wa
[2] M. Schweizer, T. Friedli, J. W. Kolar,

Infineon Technologies Austria AG.
rranty
“Comparative Evaluation of Advanced
Siemenstrasse 2, 9500 - Villach - Austria
Three-Phase Three-Level Inverter/
Converter Topologies Against Two-Level
Systems”, Industrial Electronics, IEEE
Transactions on, On page(s): 5515 - 5527
Volume: 60, Issue: 12, Dec. 2013. www.infineon.com/power
[3] M. Schweizer , T. Friedli and J. W. Kolar,
“Comparison and implementation of a
WE POWER YOUR PRODUCTS

www.bodospower.com April 2017 Bodo´s Power Systems®27
www.recom-power.com
IGBT
CONTENT
MODULES
Evaluating the Effect of High

Switching Frequency on the
Performance of an Active Front
End Converter Results in
Efficiency of 98.5%
Increasing the switching frequency of a power converter will bring a number of
benefits; passive component size can be reduced as the requirements for stored energy
decrease, and increasing control loop bandwidths will enhance dynamic performance.
For commercial power converters operating in the 10s of kW though, the upper limit of
switching frequency has tended to be in the 10 – 20 kHz region where IGBT switching
losses start to become unmanageable without more complex soft switching techniques.
By Jon Woodhead, Converter Technology Ltd, Pangbourne, UK
Introduction to the mains is generated at the converter side of the input inductors.
With the recent rise of wide-bandgap semiconductors, particularly Adjusting the magnitude and phase of the converter voltage, VAFE,
Silicon Carbide (SiC), switching losses have once again taken a back relative to the input voltage, VIN, will create a voltage drop across the
a seat and the frequency of converters can be pushed further, but inductor, forcing current to flow. By adjusting the amplitude and angle
is there a point at which other system level challenges limit perfor- of the current relative to the input voltage, full bi-directional control of
mance? The Converter Technology Hardware Stack™ has been used both active and reactive power becomes relatively simple to imple-
to explore the behaviour of a 10 kW active front end (AFE, Figure 1) ment, opening up the converter to run in regenerative mode and/or
as a function of switching frequency and highlight some of the chal- carry out reactive power compensation. Figure 2 demonstrates the
lenges seen when running at high frequency with this topology. calculation of the converter voltage VAFE and phase angle ε (ignoring
the impact of inductor ESR for clarity). For 10kW total power (3.3kW/
phase, power flow from AC to DC link), 230Vrms phase voltage, 50Hz
mains, unity power factor and a 1mH inductor, calculations show that
VAFE will need to be around 230.05Vrms and lag the mains voltage
by 1.13°.
Figure 1: (i) Converter Technology Hardware StackTM Rapid Proto-

typing System (ii) 10 kW Active Front End Schematic and Parameters
Control of the AFE

An AFE is a natively bidirectional power topology which allows a three
phase AC supply to be converted to a high voltage DC link whilst Figure 2: Calculating the Converter Voltage and Phase Angle
maintaining excellent power factor and low harmonic distortion. Rath-
er than adhering to the methods used in single phase PFC, whereby For this converter, Voltage Oriented Control (explained in some detail
the mains current is forced to follow the shape of the mains voltage, in [1]) is used to accomplish this. In brief, the three phase rotating
mimicking a perfectly resistive load, most three phase PFCs operate values for input voltage and current are transformed into stationary
slightly differently. The central premise can be most readily under- values within a DQ reference frame aligned to the phase of the input
stood if a single phase of the converter is analysed and imagined voltage. In this way, simple PI controllers can be used to indepen-
to be running as an inverter from a constant DC link. A duty cycle is dently set the active and reactive current flow through the inductor. An
chosen so that a sine wave of almost identical phase and magnitude outer loop is then closed around these to regulate the DC link voltage.

IGBT
CONTENT
MODULES
The Influence of the Inductor Value stability. As can be seen from the calculations It should also be considered that by setting
In general, an increase in switching fre- in Figure 2, the required AFE voltage and the voltage VAFE relative to a measured
quency allows for a corresponding decrease angle are very close to the phase voltage, input voltage to force current flow through the
in inductor for a given ripple current, but and both are directly related to the imped- inductor, the current controller is essentially
there are there are other considerations ance of the inductor at line frequency. Whilst closing the loop around the inductor, so the
when using an AFE. In assessing whether a simple voltage transducer with a measure- gain of the system is inversely proportional to
the inductor value can be reduced, one has ment accuracy of 1 % would cause no issue the inductor value. Combining the increased
to consider not only the current ripple but when measuring the DC output voltage of the impact of measurement inaccuracies with
also the resolution of the measurement data converter, it becomes significant when look- extra sensitivity suggests that targeting very
available and the potential impact on system ing at the input voltage. high frequency operation (100s of kHz) to
use lower inductance at these power levels
would likely require more complex control
schemes.
Operational Data
The converter was run at switching frequen-
cies from 30 – 100 kHz and at loads of 10
– 100 %. Input voltage was 230Vrms(ph)
and output was 800Vdc. Input and output
power were monitored to calculate efficiency
whilst the power factor and THDi were
directly available from the power analyser
on the input. Figure 3 shows the variation
of efficiency of the converter over the whole
range of conditions. As can be seen, even
in this prototyping setup, efficiencies above
98 % are achievable. The maximum full load
efficiency was measured at 98.6 % when
Figure 3: Efficiency of a 10 kW Active Front End vs Switching Frequency running at 50 kHz.
Testing Static and Dynamic

Power Behaviour
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IGBT
CONTENT
MODULES
Whilst it is common to use the power factor The less immediately obvious impact is how It has also been shown that dead time
as a figure of merit, IEC Standard 61000-3-2 this affects the losses. During the dead time directly impacts both the generated wave-
actually dictates maximum limits of harmonic period, circulating current will be forced form shape and the distribution of losses
distortion in the current waveform when to flow through the diodes rather than the throughout the power devices so should be
determining EMC compliance. Although com- MOSFETs. The MOSFET in this package considered when determining the operating
pliance can only truly be assessed by looking has a very low RDS(on) of 25 mΩ whereas frequency and even when assessing semi-
at the current harmonics individually, a rough the diode is less optimised and has a typical conductors. Although dead-time is important
guide is that THDi should be less than 10% forward voltage of 1.5 V. By forcing the cur- for safe operation of the converter, the loss
(the sum total of all of the stated harmonic rent to spend more time flowing through the incurred in the diodes during the dead-time
limits). For reference, this would equate to a
power factor of 0.995 on a system where the
voltage and current are perfectly in phase.
THDi was seen to reduce with an increase

in switching frequency. Running the AFE at
a switching frequency of 50 kHz presents
a THDi of just 3.2% and the THDi was ob-
served to be less than 5% across the range
of switching frequencies tested, though there
was a slight drop off in performance above
80kHz.
The Impact of Dead-Time

The drop off in efficiency and harmonic Figure 5: Simulating the Effect of Dead Time on AFE Currents
performance at high frequency are likely both
attributable to the increasing impact of dead comparatively lossy diodes instead of the period could become a factor when targeting
time. As demonstrated in [2], the error in the MOSFETs it is inevitable that the power loss ultra-high efficiencies (>99%).
duty cycle when a sine wave is generated by of the system will go up.
an inverter power stage is directly propor- Using the Hardware Stack to investigate
tional to the dead time divided by the switch- Conclusions the operation of an AFE over a wide range
ing period. This causes deformation of the One of the key benefits of operating at high of frequencies gave 50 kHz as the optimum
waveform, which gets exaggerated at higher frequencies is the ability to reduce the size switching frequency for this converter, result-
switching frequencies. This distortion causes of magnetics. The impact of the inductance ing in an efficiency of 98.6 % and a THDi of
the waveform to contain more low order value on both the operation and control of 3.2% at full load. This was achieved without
odd harmonics, causing THDi to increase. the AFE has been demonstrated, highlighting optimisation of magnetics, implementation of
This can be seen from the simulation results the complications that arise when increasing specialised modulation patterns or the use of
shown in Figure 5. switching frequency in an attempt to mini- proprietary control algorithms. The fact that
mise the inductance value. there are demonstrable, explainable upper
limits to the switching frequency at which
the efficiency and power factor both start to
decrease should not dissuade us from push-
ing the limits of high frequency operation but
be used alongside other considerations to
make an informed decision on the operating
window of the converter design.
References
• S. L. Sanjuan, “Voltage Oriented Control
of Three-Phase Boost PWM Converters,”
2010. [Online]. Available: http://webfiles.
portal.chalmers.se/et/MSc/SylvainLECHAT-
SANJUANMSc.pdf. [Accessed 1 February
2017].
• I.D.Mosely, P.H.Mellor and C.M.Bingham,
“Effect of Dead Time on Harmonic Distor-
tion in Class-D Audio Power Amplifiers,”
Electronics Letters, vol. Vol. 35, no. No. 12,
1999.
• Jon Woodhead <Jon.Woodhead@
Figure 4: Vout and Iph at Fs = 50 kHz, Pout = 10 kW, convertertechnology.co.uk>
Dead Time = 200 ns. Efficiency = 98.6%, THDi = 3.2%
www.convertertechnology.co.uk

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PROTECTION
CONTENT
Essential Overvoltage Protection

Smart building and smart home applications such as intelligent thermostats, access
controls and burglar alarms are becoming more widely established as a standard in
building management. Of these applications, fire alarm systems are especially important,
because people’s lives and property depend on them. TDK offers a series of EPCOS
components that are crucial to the reliability of fire alarm systems. Particular importance
is attached to solutions for overvoltage protection.
By Bettina Renz, Dipl.-Ing. (FH), Product Marketing Manager,
Piezo and Protection Devices, Multilayer Components, TDK
Office blocks, hotels, airports, shopping malls: buildings designed for detectors, motion detectors and glass breakage sensors must also be
large numbers of people must be equipped with automatic fire alarm integrated into the system. Figure 1 illustrates the basic structure of a
systems. These are complex systems consisting of sensors, actua- fire alarm system.
tors, power supplies and data transmission units. The individual fire
detectors are generally linked over a network to a controller. Depend- The fire detectors operate with different sensor technologies, depend-
ing on the building structure and layout, both ring and star network to- ing on requirements:
pologies are used. The controller has two tasks: to scan the installed • optical sensors for detecting smoke
devices at regular intervals and then, if a detector is actuated, it • temperature sensors for detecting rises in temperature
must trigger the necessary actions – including the audible and visual • gas sensors for detecting CO and CO2
alarms in the building, the closing of fire doors and the notification of
the fire service over the LAN or mobile communications network.
Figure 2 shows the block diagram of a fire detector with optical sen-
Fire alarm systems are powered, for example, by means of 24-volt sors.
power supplies. As the systems must continue to function even if the
power fails, this supply is combined with a UPS that guarantees a Tough demands regarding overvoltage protection
voltage supply even during extended power outages. Apart from fire Due to their complexity, fire alarm systems can be exposed to all
kinds of overvoltages. These can occur on both data and power sup-
ply cables. The problem is exacerbated by the considerable length
of the cables in the system, as this produces a number of possible
coupling scenarios. Figure 3 provides an overview of the possible
types of overvoltage.
Figure 3: Overvoltages differ according to level of voltage, duration

and cause. The wave forms and standards by which these are mea-
sured are correspondingly diverse.
TDK markets suitable EPCOS varistors for all kinds of overvoltage. A

distinction is made here, however, between monolithic and multilayer
Figure 1: Structure of a fire alarm system whose network for the fire types.
detectors is based on a double ring topology. The audible alarms ESD IEC 61000 4-2
(sounders), on the other hand, operate in a star network topology
Surge, lightning IEC 61000 4-5
Burst, EFT (electrical fast tran- IEC 61000 4-4

sient)
Switching of inductive loads ISO 7637-2
TOV (temporary overvoltage) no standard
Table 1: Information for Figure 3
Monolithic varistors are designed for high voltages and currents and
Figure 2: Internally, the voltages for the microcontroller (3.3 V) and are therefore used for the mains inputs of power supplies. In addition
for the infrared transmitter and receiver (10 V) are generated from the to conventional disk varistors, the T14 and T20 series of EPCOS
voltage of the supply bus (24 V) ThermoFuse™ varistors are particularly suitable for safety-related

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Goethering 58 info.semi@fujielectric-europe.com
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International Exhibition and Conference applications. They are designed for voltages between 130 VRMS and
1000 VRMS and their surge current capability is up to 10,000 A (8/20
for System Integration in Micro Electronics µs).
Nuremberg, 16 – 18 May 2017
If the varistor of a ThermoFuse should overheat, the integral fuse
isolates the varistor from the network and prevents any fire on the
printed circuit board or damage to components located near the varis-
tor. Fuse and varistor are housed in a plastic casing that, like the coat-
ing of the varistor, is made from flame-retardant material.
The components have three connections: Two for the power cable
and one acting as a monitoring output, by means of which the status
of the component can be displayed with an LED, for example. To
simplify replacement, these varistors can be installed using a printed
circuit board terminal.
Figure 4: Varistors of the
Experience the diversity ThermoFuse series protect

themselves against overheat-
of Assembly and ing. Moreover, the status of the

component can be continu-
Interconnection Technologies ously monitored by means of a

monitor output
For the power supply bus of fire alarm systems as well as the fire
E XH IBITI O N TO P I C S: detectors themselves, the multilayer varistors of the CTVS surge
protection series are suitable for protecting against surges in ac-
• Technologies and Processes cordance with IEC 61000 4-5. Thanks to their multilayer technology,
these components can be manufactured for different rated voltages
• Materials and Components
according to requirements. The surface-mount components in case
• Manufacturing sizes 0805 through 2220 are designed for surge currents of up to
6000 A at 4 kV in the pulse shape 8/20 µs or 2 kV at 10/700 µs and
• Manufacturing equipment can withstand forces of up to 15 J. These components are even suit-
able for ESD protection according to IEC 61000 4-2 Level 4 and offer
• Reliability and Test reliable protection up to 30 kV.
• Software and Systems
In contrast to other protection component technologies, such as TVS
• Service and Consulting diodes, EPCOS CTVS varistors exhibit no derating up to a tempera-
ture of 150°C.
As required for certain components by manufacturers of safety sys-
tems, the relevant types of the CTVS series are approved to UL 1449
(file ID E481997).
Key data of the EPCOS CTVS surge protection series
VRMS [V]: 30 - 115

VDC [V]: 38 – 150
Isurge (8/20 µs) [A]: 80 – 6000
Wmax [J]: 0.3 - 15
Size (EIA): 0805 - 2220
t:
y o u r fr e e entry ticke Table 2: The key data of the CTVS surge protection series
Secure kets
ri d p a c k a g ing.com/tic
smthyb One varistor for every voltage level
Fire detectors that operate with optical sensors require additional
internal voltage levels: 10 V for the infrared transmitter and receiver
and 3.3 V for the microcontroller. Figure 5 shows a possible circuit
diagram for generating the different voltages in a fire detector.
The input, which is supplied by the 24-volt DC bus, must always be

protected with a varistor (CTSV1), in order to prevent injection of
Information:
+49 711 61946-828
smt@mesago.de www.bodospower.com
smthybridpackaging.com
THE NEWCONTENT
CIRCUIT
TOPOLOGIES
ask for
NEW ELECTROMAGNETIC
overvoltages. A CT2220K30G EPCOS SMD would paralyze the entire line section. To
COMPONENTS
multilayer varistor from the CTVS surge pro- prevent this, every fire detector must be
tection series can be used for this purpose. It equipped with a fuse. PTC thermistors
has a maximum DC voltage of 30 V and is de- are particularly well-suited to this task, as
signed for a surge current of 1200 A (8/20 µs). they act as self-resetting fuses. Functional
It should be placed as near as possible to the principle: as long as the thermistor is cold
connecting terminals. The parallel-switched (room temperature), it has a low resistance.
C1 capacitor – for example, a TDK MLCC – is If, as in the case of a short circuit, a current
used for suppressing high-frequency interfer- occurs that is significantly above the specified
ence. Depending on the bus voltages or maximum, the PTC thermistor heats up and
surge voltage requirements, there are a large switches suddenly to a high-impedance state.
number of other multilayer varistors from the This restricts the current flow to a non-critical
TDK portfolio which can be used at the input. level. As soon as the cause of the short circuit
OUR TECHNOLOGY AND

OUR DEVELOPMENT
AT YOUR DISPOSAL
Figure 5: Generation of different voltage levels in a fire detector by means of a discrete solution
for 10 V and an LDO (low-dropout controller) for 3.3 V. Four varistors are used here for the
TO REACH:
protection against over voltages
The circuit comprising Q1, R1 and D1 forms has been rectified, the PTC thermistor cools HIGH Simulations
the voltage controller for the 10-volt output. To down and returns to its low-impedance state. PERFORMANCES and tests
increase safety, a CT0402S11ACCG EPCOS The B59873C0120A570 EPCOS PTC, which
varistor is switched in parallel with the Zener is designed for a maximum load current of
diode (D1) in order to prevent an excessive 90 mA at 25°C, is ideally suitable for use in
voltage rise at the base of Q1 should the fire detectors.
HIGH Vacuum
diode fail. The stabilized 10-volt output is INSULATION Casting
protected with a further varistor (CTVS3). The Broad range of components for fire alarm
ceramic capacitors C2 and C3 are used for systems
stabilizing and noise suppression. The volt- Apart from the solutions for overvoltage pro- HIGH High level of
age for the microcontroller that is generated tection, a whole series of other EPCOS and
via the LDO controller is protected by means TDK components are suitable for use in fire
RELIABILITY Automation
of a CDS2C05GTA varistor (CTSV4). alarm systems. These include inductances as
well as ceramic, film and aluminum-electro-
Apart from the power supply lines, it is lyte capacitors, as well as NTC thermistors. STANDARDS UL Insulation
also necessary to protect the data cables, The latter can be used, among other things, COMPLIANCE System
because ESD events can damage interfaces to make fire detectors that operate on the
in particular. For this purpose, TDK offers thermal principle.
excellent protection in the form of the EPCOS
MORE THAN 40 YEARS
CeraDiode® high-speed series. Thanks to the
Author: OF EXPERIENCE
low self-capacitances, which are as small as
Bettina Renz, Dipl.-Ing. (FH),
0.6 pF depending on the type, the integrity
Product Marketing Manager For standard components visit
of the signal is not affected. Apart from the our website www.sirio-ic.com
Piezo and Protection Devices • Multilayer
conventional single-chip types, arrays are
Components, TDK
also available, for example, for as many as
four data cables. A further striking technical
feature of the product is the extremely short
www.epcos.com/varistors_thermofuse
response time of the CeraDiodes at no more
than 0.5 ns.
www.epcos.com/ctvs
Short-circuit-proof thanks to PTC thermis-
tors www.epcos.com/ptc INDUCTIVE COMPONENTS FOR HF
As all fire detectors lie parallel to the supply INDUSTRIAL APPLICATIONS
bus, a short circuit in just a single device
SIRIO ELETTRONICA s.r.l.
Via Selve, 2 - 35037 TEOLO (PD) - ITALY
Phone: 0039 049 9901090
Fax: 0039 049 9901868®
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INTELLIGENT
CONTENTPOWER
IPM Solution for Low Rated

Power Application
µIPM-DIP & CIPOS Tiny without Heat-sink
“Energy saving” is applied on all power electrical systems and low rated power
application is no exception to this. It can be realized to move forward from no-inverter
design to inverter design. In addition, the light weight and compact size are always a
concern for the product design. No heat-sink approach is in the trend. In this article, no
heat-sink IPM solution with µIPM-DIP is introduced.
By Simon Kim & Pengwei Sun, Infineon Technologies, Korea & USA
Home appliance market needs this module can be protected by thermal comparator. In the example
To further reducing the energy consumption, consumer market re- circuit, external thermal comparing with 3V reference voltage allows
quests to speed up the inverterization. It is no exception to home ap- controller to be aware of the NTC temperature inside of IPM around
pliances. Especially, home appliances with low rated power are also 115[°C]. In no heat-sink condition and steady status, this NTC value
falling in the range gradually. Home appliance makers try to make matches estimated junction temperate, 135[°C] (refer to [1]). If devel-
product smaller and lighter. With these considerations, no heat-sink oper wants to set lower thermal protection level, reference level can
approach can be in the trend. Therefore, no heat-sink IPM solution is be set in another value. In addition, NTC terminal from IPM inside
introduced with some application specifications. is connected to controller and its value is monitored by controller
directly.
Low rated power application
The definition of low rated power can be different for each applica-
tion field. In this document, rated power application under 150W is
reviewed with some application in home appliance. Here, fan and
fridge compressor under 150W can be considered with the following
specifications (refer to Table1).
Power P.F Vin Vdc Vout Iout Fs/w Ta

App.
[W] 　 [V] [V] [V] [A] [kHz] [℃]
Fan 130 0.85 220 311 190 0.46 15 45
Fridge 80 0.55 220 311 190 0.44 8 50
Table1: Target specification for fan & fridge compressor

Figure 1: µIPM-DIP 600A 4A IPM package (top) & its application
example circuit (bottom)
For these targeted specifications, IPM solution is considered as fast
and easy solution.
Under 150W application, 600V 3A IPM can be considered. However,

for both no heatsink approach and higher frequency applications
(around 15[kHz]), 3A cannot be a proper solution. Hence, 600V 4A ~
6A can be good candidates. Infineon µIPM-DIP 4A module’s plastic
body dimension is “29 x 12 x 2.9[mm]” and 3 package types can be
supplied to customers: SOP23, DIP23 & DIP23A.
Figure 1 (bottom) shows sensor-less motor drive circuit example with

Micom, IRMCF171. µIPM-DIP is composed with gate driver, IGBT
and NTC. By adding bootstrap capacitor, IGBT can be operated from
controller due to embedded bootstrap diode simply. Also, this IPM
has open emitter type in each leg and it makes easier for developer
choose between one- shunt and three-shunt solutions. 3.3V controller Figure 2.Max phase current vs carrier frequency, no heat-sink. Space
is compatible with this IPM. By using embedded NTC in µIPM-DIP, Vector Modulation, V+=320V, Ta=28°C, Tj=128°C

INTELLIGENT
CONTENTPOWER
Fan application in air conditioning system ent control modulations: 3-phase & 2-phase Tj=128[°C]. So, in operation for estimated
Thermal result for estimated 130W fan ap- modulations. Junction temperature was 130W fan, this IPM’s junction temperature
plication can be expected from the followed monitored by IR camera. Junction tempature can be lower than Tj=128[°C].
Figure 2. This shows “carrier frequency vs was controlled around Tj=128°C. Estimated
RMS phase current” with fixed junction tem- 130W fan is operated in fs/w = 15[kHz] & Iout To estimate junction temperature with
pature. This graph was made and based on = 460[mA] in Table 1. Figure 2 shows that targeted customer operation conditions, In-
thermal tests. Test was done with two differ- 530[mA] is achieveable in 15[kHz] around fineon IPM simulation tool can be supported
as online simulation [2]. Especially, no heat-
sink simulation is possible. First, user should
select “No heatsink needed”. Put Ta=28°C
in Reference temperature and 0.53[A] in
“Motor driver phase current RMS”. Then,
put the value in “thermal resistance (case to
reference)” and adjust this value till simula-
tion result in Tj=128°C. In this case, this
value would be around 30.5[k/w]. This value
is high due to no heat-sink condition and
highly depends on customers’ PCB design.
With “thermal resistance (case to reference)”
value, the maximum junction temperature for
130W fan without heatsink operation can be
calculated in Ta = 45[°C] and the value would
be around 132[°C] (Refer to Figure 3.). It is in
the thermal safe area.
Fridge Compressor applications

In addition, 80W Fridge compressor applica-
tion can be reviewed with Figure 4.
Figure 3: Expected simulation result for 130W fan with 15[kHz]
4000V Isolated Gate Driver Module

IXIDM1403: 30A and IXIDM1401: 10A
AC, DC motor drives, inverters, converters, medical, UPS, traction and SMPS
Key Features: Optimized for:
• Dual Channel Driver for Half-Bridge Switching Modules Phase-leg IGBT Modules:
• Blocking voltages up to 4000 V • up to 600A/600V • up to 600A/1200V • up to 450A/1700V
• +15 V/-5 V Isolated Gate Driver Output Voltage to Drive IGBTs with up
ORDERING INFORMATION
to 10 A/30A Pulse Current
IXIDM__
• 3 V TTL Logic Level Microcontroller Interface
• Single 15 V Power Supply Operations DESIGNATORS DESCRIPTION SYMBOL DESCRIPTION
• Operating Ambient Temperature: -40oC～+105oC  Module Configuration 1 Two Isolated Gate Drivers
• Footprint: 50 mm x 50 mm  Isolation Voltage 40 4.0 kV
• UVLO, OVLO, OC, Temperature, short-circuit (SC), Active clamping  Gate Current 1, 3 10 A, 30A
protections (check datasheet for details)  Positive Gate Voltage 15 15 V
 Negative Gate Voltage 05 -5 V
 Negative Gate Voltage 15 -15 V
 Package Information O – Open Frame, M - Molded
PART NUMBERS AND ORDERING OPTIONS:
IXIDM1401_1505_O - two isolated gate drivers with 10 A gate current ,
15 V positive and -5 V negative gate voltage, open frame version.
IXIDM1401_1505_M - two isolated gate drivers with 10 A gate current ,
15 V positive and -5 V negative gate voltage, molded version.
IXIDM1403_1515_O - two isolated gate drivers with 30 A gate current ,
15 V positive and -15 V negative gate voltage, open frame version.
IXIDM1403_1505_M - two isolated gate drivers with 30 A gate current ,
15 V positive and -15 V negative gate voltage, molded version.
EUROPE USA ASIA

IXYS GmbH IXYS Power IXYS Taiwan/IXYS Korea
marcom@ixys.de sales@ixys.com sales@ixys.com.tw
+49 (0) 6206-503-249 +1 408-457-9042 sales@ixyskorea.com
www.ixys.com
INTELLIGENT
CONTENTPOWER
Estimated thermal result for 80W fridge can be calculated by Infineon

simulation tool. In Ta = 50 [°C], the estimated max junction tempera-
ture is around 113[°C] It is in the thermal safe area as well.
Figure 4.Max phase current vs carrier frequency, no heat- sink. Space

Vector Modulation, V+=320V, Ta=28°C, Tj=98°C
For system safety, short circuit capability must be reviewed and Figure 5: Test board & Test circuit with u-IPM-Dip(Top) and Test graph
tested. In this test, AC line and (-) terminal was in common by wire for short circuit test in Vdc = 400[V] & Isc = 20[A] peak(bottom)
and then one pulse was applied
on Top IGBT in Infineon µIPM-DIP
4A module. Test condition was with
Vdc = 400[V] and Isc = 20[A] for
5[µs]. The IPM was passed without
any failure (Refer to Figure 5).
For short circuit or over current

protection, controller does monitor-
ing the voltage on shunt in soft-
ware protection. Or, for hardware
protection, external comparator
can be applied with some voltage
reference level (current trip level)
additionally.
Additional solutions
If customer wants to use IPM with
error feed-back to controller, Infi-
neon suggests CIPOS Tiny (Refer
to Figure 6).
Conclusion
In this article, for low rated power
applications under 150W without
heat-sink approach, 600V 4A
Figure 6: CIPOS tiny’s body dimension(top) and it circuit example with Error feedback
µIPM-DIP was proposed. It showed
good short circuit capability and
thermal margin with both applications: 130W Fan and 80W Fridge
compressor applications. For Error Feedback from IPM to controller,
CIPOS Tiny can be a solution.
Reference
[1] IRSM506-076, uIPM-DIP (600V 4A IPM) data sheet
[2] Web Infineon IPM Motor Drive Simulator:
https://plex.infineon.com/plexim/ipmmotor.html
[3] IRAM363-066EA, CIPOS Tiny (600V 6A IPM) data sheet
www.infineon.com/power

MiniSKiiP®
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Current range 4A to 400A for inverter power up to 90kW
with one product platform
Comprehensive setup of topologies: CIB, 6-pack,
twin 6-pack, H-bridge, half bridge, 3-level,
bridge rectifiers with brake chopper
Solder-free SPRiNG Technology for shortest assembly
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DESIGN
CONTENT
AND SIMULATION
Configurable Mixed-signal ICs

and Asynchronous State Machines
Can Optimize Embedded Designs
Lower Power, More Secure & Easier to Implement Alternatives to MCUs
By Mike Noonen, John McDonald and Nathan John, Silego Technology Inc.
Introduction the Silego Hardware Development Kit (see Figure 1). When they are
SoC and MCUs require external circuitry for power management, hu- satisfied with the design, they can program the CMIC device with the
man interface or connecting to sensors. As a result, there are almost on-board OTP memory.CMICs can be used for a variety of essential
always comparators, op amps, level shifters, various logic and dis- mixed-signal functions including motor control, system reset, power
crete transistors scattered across a design. These SoCs are almost sequencing, etc.
never truly Systems on a Chip.
CMIC Advantages
In some cases, the support logic needed can be swept up into a CMICs offer embedded designers and manufacturers multiple advan-
low-end FPGA. But usually this is not a cost saving over discrete tages over traditional discretes and analog:
components. It is also an inadequate solution since an FPGA cannot 1. Embedded Designs Need Optimized Board Space
address analog or discrete components. For an embedded device, A dozen or more components can take up precious space which
this challenge will be even more pronounced as an MCU or SoC can- could be better used for a larger battery or a slimmer form factor.
not address all the possible sensor, power, and connectivity options. A CMIC can integrate several components into one tiny product as
small as 1.0 x 1.2 mm. 88 percent board reduction is possible.
Configurable Mixed-signal ICs 2. Embedded Designs Need a More Convenient, Faster Way to
Configurable Mixed-Signal ICs (CMICs) offer a clever solution to Innovate & Prototype
these challenges. CMICs are a matrix of analog and digital circuit Traditional circuit prototyping requires days if not weeks to design
functions that are configurable through One-Time-Programmable a PCB, order components, fabricate the board, assemble, debug
(OTP) Non-Volatile Memory. The pioneer and leader of this new and repeat. CMIC Design, Emulation and Prototyping can be
category of devices is Silego Technology. Since introducing CMICs done in just one day.
in 2009, Silego has completed over 1,300 customer designs and 3. Embedded Designs Need Lower-Cost Bill of Materials
shipped over 2 billion CMIC devices. Silego’s CMICs offer an Asyn- CMICs have been designed to reduce the bill of materials cost
chronous State Machine (ASM) and a variety of analog and digital over discrete and analog components. A recent design profiled
resources that a designer can configure into mixed-signal circuits. on embedded.com highlighted that 1 CMIC part replaced $1.50 of
Designers can drag and drop these resources and “wire up” their de- level shift and comparator circuitry with a single $0.35 CMIC.
sign in a schematic capture tool, or they can emulate the design with 4. Embedded Developers Want a Confidential Design That Is
Hard to Copy
The custom circuitry inside a CMIC is as secure as a full custom
IC and only the designer or its designated ODM and supply chain
partners can procure it.
No static power & no code ASM vs. Low Power MCU for embed-
ded applications
Portable systems often use low power microcontrollers to address
their challenges with size and battery life. Silego’s CMICs with ASM
offer an alternative solution. The following comparisons illustrate
design tradeoffs between microcontrollers and CMIC’s ASM.
Handling MCU code

1. The ASM in Silego’s 5th generation GreenPAK CMIC contains 8
states and 24 possible decisions. The ASM represents an MCU
program with up to 24 IF...THEN statements. When the 8 State
ASM capabilities are considered together with hardware input and
output circuits, the CMIC may be represented as being roughly
equivalent to about 100 lines of standard C code written for com-
mon 8 and 16 bit MCUs.A CMIC ASM is event driven and does
Figure1: Green PAK Universal Development Kit not operate with a clock. As such, when there are no events, the

DESIGN
CONTENT
AND SIMULATION
ASM stays in one state and consumes no static power. Thus, ap- and no ability to unintentionally over write program memory, and is
plications with limited input cycles can operate at leakage current therefore inherently more robust with VDD noise and brownouts.
power consumption well in to the single digit nanoamps of average 7. No Code GUI based tools vs. typical MCU tools
current consumption at room temperature. A CMIC ASM is configured using the GreenPAK Designer devel-
2. Handing embedded control problems opment environment. The software is an easy to use schematic
Silego has modernized the ASM, mitigating the well-known hazard capture editor that can reduce the typical MCU tool learning curve
and race conditions, the programming/configuration headaches, from months to Silego’s GPAK learning curve of a few days (see
while retaining all the inherent low-power, low-latency benefits Figures 3).
for simple (up to 8 states) embedded control problems that would
require less than 100 lines of code.
3. Over kill microcontrollers vs. CMIC ASM value
Microcontrollers are often inefficient in size and power. It is quite
common to find MCUs designed into applications where less than
1% of the MCU horsepower will ever be used. CMIC’s ASM is well
suited to simple embedded control applications, especially ultra-
lower power applications (see Figure 2).
Figure 3: CMIC Asyncronous State Machine Software
8. CMIC size vs. low-power MCUs

Without all the complexity of the MCU architecture the CMIC is
usually smaller. If a CMIC product can perform the control func-
tion, then it is also usually the smallest programmable option on
the market.
CMICs Make Embedded Design Easier and Products Better

Figure 2: GreenPAK Block Diagram with I2C In summary, the tiny CMIC with the 8 state ASM can take on a variety
of embedded control applications that would formerly have been the
4. Interrupt latency (ns vs. us) exclusive domain of microcontrollers. The easily configured ASM
An important benchmark for microcontrollers is how short is the brings key advantages of ultra-fast state transitions, leakage level
time from an external interrupt signal until the core is executing the static current consumption, robust design, and supply voltage toler-
first instruction of the interrupt service routine (ISR), the so-called ance important for IoT, portable, and embedded applications. In ad-
interrupt latency. MCU interrupt latency is usually measured at dition, CMICs offer many benefits that will allow embedded designers’
around 5 to 10us. to make products more profitable.
An ASM equivalent of interrupt latency is measured in nanosec-
onds. If the CMIC is operating at 5V power supply, the latency is a www.silego.com/products/greenpak.html
maximum of only 50ns..
5. VDD variation
Mike Noonen,
A CMIC ASM works over a wide voltage range. A properly de-
VP Sales and Business Development
signed ASM is guaranteed hazard and race condition free because
each ASM signal path is guaranteed by signal length and gate
count. Thus, as the VDD changes, so does the propagation delay.
However, the propagation delays are all matched and thus perfor-
John McDonald,
mance is guaranteed.
VP of Marketing
Microcontrollers, on the other hand, are clocked with signals that
are not correlated well with VDD. As the VDD changes, the MCU
Nathan John,
propagation delays change and since the timing doesn’t change,
Director of Marketing
the timing margins are soon compromised.
6. Crash vs. no crash
Design and system flaws that can cause a microcontroller to crash
include: poorly written software, timing issues, miscalculations of
interrupt latency, running out of stack memory, memory leakages,
and accidental writes in program memory. Silego’s ASM is con-
figured in hardware with NVM bits, has no timing issues, latency
measured in ns, no stack memory, no ability for memory leakage,

Visit us at PCIM, Nürnberg
16th-18th May, 2017
hall 9, booth 327
Danfoss Silicon Power brings the key to

efficiency and durability with
customised SiC power modules.
>25+
years’
of experience in
customer specific
power modules,
development and
production.
With energy savings becoming ever more important, power management is the key to
securing efficiency and durability. Customised SiC power modules from Danfoss
Silicon Power are fully configurable and tailored to optimise power conversion
efficiency, increase quality and strengthen productivity.
One of the main advantages of SiC power modules by Danfoss is the flexibility that provides you a wide
portfolio of selectable MOSFETs from different manufacturers. A proven set of bonding and joining
technologies, packaging and cooling concepts brings the full potential of the semiconductors to your
application and reduces footprint size. Highly conductive substrates are key for Danfoss power modules from 30V
up to 1700V to allow minimum die area and cost-effective bonding and joining processes due to the lowered
operating temperature. The preferred technology for your application can be housed in standard or customised
packages with flexible pin positions. Choose the perfect fit for your application.
www.siliconpower.danfoss.com
NEW
CONTENT
PRODUCTS
Double Sided Cooling to 60V Power MOSFETs for Motor Control and Power Supplies
Toshiba Electronics Europe has extended its range of high-efficiency
U-MOS IX-H MOSFETs with an N-channel device in a ‘DSOP Ad-
vance’ SMD package that offers double sided cooling.
The 60V TPW1R306PL has an ultra-low typical on resistance (@
VGS = 10V) of just 0.95mΩ and is offered in a very small form factor
of 5 x 6mm. Maximum drain current and power dissipation are 260A
and 170W respectively. The enhanced thermal dissipation provided
by the double-sided cooling will help to reduce device count and save
space in high-component-density applications. The thermal resistance
rating (Rth (ch-c) of 0.88k/W) to the top side of the package is signifi-
cantly lower than that of competitor packages.
Target applications for this latest MOSFET include DC-DC converters,
secondary-side circuits of AC-DC power supplies and motor drives in
cordless home appliances and power tools.
www.toshiba.semicon-storage.com/eu/company/news.html
Smallest Isolated RS-485 Transceiver

Intersil Corporation announced the industry’s smallest isolated RS-
485 differential bus transceiver designed to provide 4Mbps bidirection-
al data transmission for Industrial Internet of Things (IIoT) networks.
The high-speed ISL32704E delivers industry-leading electromagnetic
interference (EMI) and common-mode transient immunity (CMTI) in a
small 4mm x 5mm QSOP package that is 70% smaller than competi-
tive devices. It also provides 600VRMS of working voltage, which is
approximately 50% higher than the closest competitor.
The ISL32704E RS-485 transceiver leverages giant magnetoresis-
tance (GMR) technology to provide galvanic isolation that keeps
the communication bus free from common-mode noise generated
in electrically noisy factory and building automation environments.
The ISL32704E is ideally suited for the equipment-to-bus interface
in IIoT networks that connect programmable logic controllers (PLCs)
to instruments, robots, motor drives, data acquisition and digital I/O
modules. The advantage of Intersil’s ISL32704E GMR isolation over based isolators that use RF carriers or pulse-width modulation (PWM)
other isolation technologies is its low radiated emission and low EMI to transfer DC and low frequency signals across the barrier.
susceptibility. In addition, its GMR isolation does not require the
elaborate encoding schemes found in capacitive and transformer- www.intersil.com
10A/4000V, Dual Channel, Isolated Gate-Driver

IXYS Corporation announced a 10A/4000V, dual channel, isolated
gate-driver: IXIDM1401_1505_O.
Built using the IX6610 and IX6611 gate-driver chipset, it allows a
3.3 V microcontroller (MCU) through a 4 kV isolation barrier, to control
IGBTs and MOSFETs in the half-bridge configuration. The PWM
signals can be as short as 500 ns, and there is no lower limit on the
switching frequency. It is capable of driving high-power IGBT and
MOSFET modules rated up to 1700V.
The IXIDM1401_1505_O gate-driver core can support switching
frequencies up to 250 kHz. The two output channels are electrically
isolated from each other and from the primary side. An internal power
supply can provide up to 2W per channel of isolated power to drive This product is designed with all the necessary features such as
both upper and lower IGBTs (or MOSFETs), effectively isolating the short-circuit protection, under and over-voltage lockout protection,
MCU from the high power circuitry. Operating from a single polarity advanced active clamping, and supply voltage monitoring. It is well
15V power source, it provides +15 V/-5V and 10A peak current to the suited for digital power control, where a typical MCU, like the Zilog
IGBT gates as well as +3.3V (at 50mA) to the corresponding control- line of MCUs, can be used to provide the brains for controlling power
ling MCU. modules.
The IXIDM1401_1505_O provides a complete dual-channel, gate-
driver solution, best in class, outperforming existing solutions. www.ixys.com

NEW
CONTENT
PRODUCTS
12-V, 10-A DC/DC Step-Down Power Solution

Texas Instruments introduced a pair of 12-V, 10-A, 4-MHz step-down
power modules that provide a power management solution that is 20
percent smaller than any other 10-A power module-based solution
available today. The easy-to-use SWIFT TPSM84A21 and TPS-
M84A22 DC/DC modules integrate power MOSFETs, shielded induc-
tors, input and output capacitors, and passives into a tiny, low profile
footprint. In addition, it provides industry-leading performance, with
as little as 1 percent overshoot in transient conditions without special
magnetics or additional capacitors. For more information, samples
and an evaluation module, see http://www.ti.com/tpsm84a21-pr-eu.
By using the step-down power module together with TI’s WEBENCH®
Power Designer, engineers can get their space-constrained point-of-
load (POL) telecom, networking, and test and measurement power-
supply designs to market faster. TI will demonstrate the TPSM84A22
module in its booth (No. 701) at the Applied Power Electronics Confe-
rence (APEC), March 27-29 in Tampa, Florida.
www.ti.com
New HV MOSFET Silicon Platform

aMOS5™
700W ATX Efficiency & Thermal
Driven by Performanace
Comp A AOTF190A60L
93.6% 93.5%
93.2% 93.2%
Our latest generation of HV MOSFET products
87.5 ℃ 90.3 ℃
91.9% 91.8%
provides high efficiency, easy-to-use solutions
for server power supplies, high-end computers,
90.2% 90.0%
charging stations and other high performance
applications.
175 350 525 700
Benefits
High Efficiency
Reduced Switching Loss
Improved Thermal Performance
ALPHA & OMEGA

SEMICONDUCTOR
Visit us at Hall 7, Booth 500
Powering a Greener Future™

For more information, please visit: www.aosmd.com or call +1 (408) 830-9742
CONTENT
Diodes for Industrial

Welding Equipment
Proton-Electrotex, the Russian manufacturer of power semiconduc-
tors and power stacks, recently released new series of welding diodes
– one in ceramic housing and two housingless diodes. All welding
diodes can be used in industrial welding equipment and perfectly suit
welding robots. The company offers diodes with enhanced average
forward current ratings comparing to available on the market alterna-
tives. On top of that, all diodes completely correspond to industrial
standards and requirements including low on-state and switching
losses, low thermal resistance, and high load cycle capability. Appli-
cation note, data
sheets, and ad-
ditional informa-
tion can be found
on the company
website.
This March
Proton-Electrotex
will participate
in APEC 2017
conference, which will take place in Tampa, FL, USA. Everyone
interested can appoint a meeting with company representatives to
have all their questions about welding diodes as well as IGBTs, power
thyristors and diodes to be answered. An appointment can be made
through a form available at company website.
www.proton-electrotex.com

NEW
CONTENT
PRODUCTS
Reliable 3 to 6W DC/DC Converters with Integrated EMC Filter

RECOM´s DC/DC converters REC3A, REC5A and REC6A have a
built-in EMI filter to meet EN55022, class A. Class B can be achieved
easily with a small capacitor.
The compact DIP24 modules (31.8 x 20.3 x10.2 mm) with 2:1 input
(4.5-9VDC; 18-36VDC) provide a regulated 5VDC output and can
be operated 0% minimum load. They are short-circuit and overload
protected and are available with an optional integrated under voltage
lockout. The converters can be operated in a wide temperature range
of -40 to +100°C (with derating) due to their excellent efficiency up
to +81%. These modules are designed for industrial applications and
can drive high capacitive loads.
The series are IEC/EN/UL60950-1 and IEC/UL/EN62368-1 certified.
They come with RECOM’s standard 3 year warranty.
www.recom-power.com
Featuring InFORMS® Reinforced Solder Preforms at PCIM Europe 2017

Indium Corporation is redefining solder with its InFORMS solder pre- When InFORMS were used to solder a DBC to the baseplate of an
forms. InFORMS are a composite preform consisting of solder and a IGBT, one study showed:
reinforcing matrix that, together, increase lateral strength and bondline 4x improved thermal cycling reliability compared to a solder preform-
co-planarity while improving thermal cycling reliability. only approach
2x improved thermal cycling reliability compared to a solder preform +
Al wirebond stitch approach
Reduced voiding (<1%)
Lower cost of ownership – as a drop-in replacement for a standard
preform or solder paste, InFORMS require no additional process
steps or equipment
Indium Corporation will feature its reinforced solder alloy fabrica-
tions, InFORMS®, at PCIM Europe 2017 booth 7-315, May 16-18, in
Nuremberg, Germany.
www.indium.com
High Accuracy Power Analysis in a Portable Device

Hioki has enhanced the legacy 3390 Power Analyzer with the new motor analysis option, to deliver a high accuracy power analysis
PW3390 Series Power Analyzer, a 4-channel device with a built-in regardless of the measurement situation. The PW3390 series offers
a power accuracy of ±0.04% rdg. and a DC to 200kHz measurement
bandwidth, which covers the range necessary to correctly measure
the input and output power of inverter devices as well as the efficiency
level of high-efficiency equipment. In addition, a built-in current
sensor phase shift function based on a new virtual oversampling
technology enables the phase characteristic compensation of current
sensors at 0.01° resolution, resulting in the accurate measurement of
even high frequency power with low power factors. 17 Hioki current
sensors rated 20 A to 6000 A are available to pair with the PW3390
to meet applications ranging from automotive power to infrastruc-
ture equipment testing, resulting in a flexible lineup of power analysis
devices to accommodate any measurement situation. Learn more at
www.hioki.com

NEW PRODUCTS
CONTENT
Highly Versatile DrMOS Power Module

Alpha and Omega Semiconductor introduced
AOZ5038QI, the highly versatile latest generation of
power modules. The AOZ5038QI integrates a dual
gate driver and two optimized MOSFETs in a 31-pin
5mm x 5mm QFN package to produce a high-power
and high-efficiency power stage for synchronous
step-down applications. The new AOZ5038QI en-
ables high power density-voltage regulator solutions
ideal for CPU and GPU power regulation in note-
book PCs, servers, and graphic cards. The standard
5mm x 5mm QFN package is optimally designed to
provide maximum power density and minimize para-
sitic inductance for minimal EMI signature.
“Complement to our small form factor, QFN3.5x5
power stage series, the AOZ5038QI is a new ad-
dition to our QFN5x5 standard package footprint
series with higher power density for today’s high-end
computing and graphic applications,” said Peter
Cheng, Sr. Director of Power IC Product Line at
Alpha and Omega Semiconductor.
www.aosmd.com

NEW
CONTENT
PRODUCTS
Power Supplies Make Highly Demanding Applications a Reality

Powerbox has announced the release
of its Defense Line of ruggedized power
solutions for highly demanding environ-
ments. The launch includes seven
series of new power supplies, compris-
ing three DC/DC (DAA-DAB-DAC),
four AC/DC (DBA-DBB-DBC-DBD) and
embracing a power range from 50W
up to 1,200W. In metal chassis format
with a baseplate for conduction cooling,
the DAx and DBx series can be used
with a baseplate operating temperature
range of -40 up to +100 degrees C.
For extremely demanding applications
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coating and mechanically ruggedized
as well as electrically ruggedizing
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Ready to use, Defense Line DC/DC DAA/DAB/DAC power supplies
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diode, input transient protection and an internal fuse to protect against
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CONTENT
Foil Resistors Offers Industry-Exclusive

Reliability and Long-Term Stability
The VPG Foil Resistors product
group of Vishay Precision
Group (NYSE: VPG) (www.
SUPERIOR
vpgfoilresistors.com), manu-
facturers of the industry’s most
PERFORMANCE
precise and stable Bulk Metal®
Foil resistors, today announced
the global market launch of the
Powertron PCS Series, a high-
reliability power current sensor family, offering exceptional long-term
stability, reliability and performance. HIGH VOLTAGE DIODES - STANDARD AND CUSTOM
Design of the Powertron PCS Series incorporates VPG’s own propri-
etary Bulk Metal Foil technology, combining high-precision resistors Dean Technology offers an exceptional range of high voltage
with both high power and a low temperature coefficient of resis- diodes for all applications including power supplies, medical
tance (TCR). The result is a power current sensor which offers truly equipment, instrumentation, control systems, voltage
industry-exclusive, high-precision measurements, without the need for multipliers and military. If our standard range of products
compensation for external temperature effects. Units are offered in 73 aren’t exactly right, we are able to customize every detail,
unique standard packages, with resistance ranges from 1 mOhm to generally with little to no increase in lead times or price.
10 Ohms, a TCR down to 3 ppm, and load stability and resistance tol-
erances to ±0.01%. They are lead free and RoHS compliant. To meet Contact DTI today to find out about the exact
30 Watt power requirements, the PCS Series may be further mounted
diode for your high voltage or high power design.
to an external heat sink. This allows them to provide three times more
rated power than any other comparable industry model.
www.powertron.de www.deantechnology.com
17 - 19 April 2018 | Liverpool ACC, Liverpool, UK
CONFERENCE
PEMD 2018
THE 9TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS, MACHINES AND DRIVES
Join 400+ power electronics, machines and drives specialists and present your work at this premier Key conference themes
international forum. There are lots of great reasons to submit an abstract and if you are selected for  Power Electronics
the programme, you will benefit from:  Machines
 A presentation slot in the conference programme  Submitted to IEEE Xplore  Drives and Control
 Your full paper published by the IET  Oral presenters may be filmed for broadcast  Transportation
 Indexed on IET Inspec on IET.tv  Energy Systems
Submit your abstract online by 14 July 2017 at www.theiet.org/pemd

Exhibitors Supported by Media Partners
#IETpemd
The Institution of Engineering and Technology is registered as a Charity in England and Wales (No. 211014) and Scotland (No. SC038698).
www.bodospower.com April
IET_3441_PEMD_2018_AD_IET_Bodos_Power_Systems_180_X_130_PRINT.indd 1 2017 17/03/2017®13:27
Bodo´s Power Systems 53
International Exhibition and Conference
for Power Electronics, Intelligent Motion,
Renewable Energy and Energy Management
Nuremberg, 16 – 18 May 2017
power semiconductors inductors magnetic materials

passive components core materials industry electronics
… share the moment!

electrical drives power converters engine control sensors
thermal management measurement power supply test
power quality energy storage automotive electronics
ticket at
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NEW
CONTENT
PRODUCTS
Single-Chip Rad Hard 32-Channel Driver with Integrated Decoder

Intersil Corporation introduced a radiation hardened 32-channel 4x higher density channel count compared to the nearest competitor,
driver with integrated decoder that reduces the size, weight and and the integrated level shifter eliminates several peripheral
power (SWaP) of satellite command and telemetry systems. The components.
ISL72813SEH is the industry’s first high current driver to integrate The ISL72813SEH driver leverages Intersil’s proprietary silicon
the decoder, level shifter and driver array in a single monolithic IC, on insulator process, which provides single-event latch-up (SEL)
allowing satellite manufacturers to significantly increase system robustness in heavy ion environments. The driver’s integrated
capacity and reduce solution size by up to 50%. The device offers a decoder interfaces directly to the general purpose I/Os of FPGAs and
CPUs in the satellite’s flight computer, dramatically reducing pin count
compared to competitive 1-input to 1-output driver arrays. Each of the
device’s 32-channels of common-emitter open-collector driver outputs
can generate pulses of up to 42V and 600mA. The ISL72813SEH
addresses latching relay and solenoid commanding for most satellite
control functions, including redundancy management, mechanism
drive enables, propulsion component relays and enables, battery
management, and payload switch control. The ISL72813SEH’s
low VCE saturation levels eliminate a major customer concern by
reducing the overhead voltage required to drive the load. The driver’s
power efficiency and high integration reduces the amount of circuitry
required on the bus, allowing customers to add more spacecraft
functionality and processing power.
www.intersil.com

CONFERENCE
October 1-5, 2017
EXPOSITION
October 2-3, 2017
Interested in exhibiting at ECCE 2017?
Email ecceexhibits@courtesyassoc.com
for more information on exhibitor and partnership opportunities
http://www.ieee-ecce.org/2017

CONTENT
Third-Generation SiC MOSFET

Platform expanded to 1200V
Wolfspeed, a Cree Company and a leader in silicon carbide (SiC)
power products, has expanded its innovative C3M™ platform through
the introduction of a 1200V, 75mΩ MOSFET in its recently released
low-inductance discrete packaging. The new device simplifies designs
and enables an increase in frequency while maintaining efficiency,
lowering system cost, reducing circuit EMI, and enabling 99% ef-
ficiency levels in three-phase power factor correction circuits.
25
Lodestone
Pacific LODESTONE PACIFIC
Supporting a Diverse
Supply Chain with Facilities
These features enable designers of applications such as telecom
Years
in the USA, Hong Kong & China
power supplies, elevators, grid-tied storage, on and offboard EV
charging, as well as factory automation to increase switching fre- Plastic Molding
quency while maintaining efficiency, decreasing system size and bill • Bobbins
• Toroid Mounts
of materials. This device achieves the industry’s lowest figure-of-merit • Through Hole & SMD
for any SiC MOSFET at 1200V. Wolfspeed has released this device • Enclosures and Boxes
in a 4L TO-247 package and plans to release it in a 7L D2PAK in the • Custom Molded Shapes
coming weeks. • Precision Optical Lenses
“SiC MOSFETs have proven to be beneficial for many high-power Toroid Mounts and Bobbins
Custom Metal Fabrication
applications connected to a battery simply due to the improved effi- • Aluminum Die Casting
ciency.” explains John Palmour, Wolfspeed’s CTO. “In the case where • Terminal Frames & Pins
power is bidirectional, such as grid-connected AC-DC, the potential • Metal Injection Molds (MIM)
cost savings are significantly increased due to the reduction in the • Metal Stamping, CNC Cutting
size of the input filter.”
Magnetic Core Materials
• Ferrite Cores
www.wolfspeed.com/C3M0075120K • Iron Powder Cores
• Tape Wound Cores
• Alloy Powder Cores Magnetic Core Materials.
Shrink to Fit Tubing
Transformer Insulation Tape
Experienced
• World Wide Logistics
• Product Development
• CAD/CAM Capabilities
• World Class Quality Systems
• China Production & Sourcing
• Cost Effective Custom Tooling
Custom Plastic & Metal Fab.
www.lodestonepacific.com • sales@lodestonepacific.com

NEW
CONTENT
PRODUCTS
T-Series IGBT Modules Line-up Expansion to 1700V

Mitsubishi Electric Corporation will continue the expansion of its The 1700V NX modules offer the newly developed SLC (SoLid
successfully launched T-series power semiconductor modules by in- Cover)-technology, the same feature as supported on 650V and
troduction and commercialization of its 1.7kV rating line-up. The new 1200V versions of this package type. The SLC-technology combines
modules realize improved power density, reliability and cost efficiency a solder-free resin insulated metal baseplate (IMB) and a specially
for general-purpose and servo inverters, uninterruptible power sup- controlled epoxy resin potting material. Due to the matched thermal
plies (UPS), photovoltaic (PV), wind power-generation systems and expansion coefficients of the constituent materials, thermally induced
other industrial equipment. mechanical stress within the module is significantly reduced and the
The most remarkable feature of the novel 7th generation CSTBTTM pump-out effect on the thermal grease due to baseplate warpage dur-
and diode chip set is the significant reduction of switching losses. As ing heat cycling is also minimized. This feature makes the NX-module
result even at relatively low carrier frequencies below 1 kHz, the new type ideal for inverters operating under challenging conditions with
1700V modules offer an improved total loss behavior when compared heavy and intermittent load cycles. Also, the use of hard mold potting
to previous 1700V IGBT-generations. This benefit is getting even instead of silicone gel provides a higher resistance against aggres-
more evident with increasing PWM switching frequencies typical for sive gases or harsh environmental conditions and offers – due to
industrial inverter applications, for example at 2 or 3 kHz. its property of being silicone free – attractive possibilities in certain
The 1700V line-up consists of various rated currents between 75A applications.
and 600A and supports both half-bridge and 6in1 topologies. Mitsubi-
shi Electric is housing the new
Anz_ITPR_3_Blau.qxp chips with the17:00
17.07.2009 latest package
Seitetechnol-
1 www.mitsubishichips.eu
ogy providing a Standard-package type as well as an NX-package
type.
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Power Analyzer PW3390
CONTENT
Improve Power Conversion

Efficiency and Minimize Loss
Wider Bandwidth and Higher Accuracy
with the New Power Analyzer PW3390
os-com@hioki.co.jp / www.hioki.com
Cool-Power ZVS Buck-Boost Regulator

Vicor Corporation announced a addition to operating voltage ranges without the need for
its growing PI37xx family of Cool-Power ZVS special circuit customizations. Wide operat-
Buck-Boost Regulators. Delivering up to 140 ing voltage ranges can enable a reduction
Watts of power, and up to 8 Amps of output in both the number of regulators and the
current, at up to 96% efficiency, the new number of power supply designs that must
PI3740 Cool-Power regulator features an be designed, configured, manufactured,
input operating voltage range of 8 – 60 VDC inventoried and maintained. The PI3740
and a regulated output voltage range of 10 converter, for example, can be used in a
– 50 VDC. Incorporating Vicor’s proprietary range of applications that would otherwise
high frequency zero-voltage switching (ZVS) require the use of several different alternative
technology, and featuring a best-in-class regulators having narrower operating voltage
combination of conversion efficiency, power battery charging. ranges.
density and performance, the PI3740 is an Like all members of the PI37xx family, the
ideal choice for demanding, automotive, PI3740 meets its performance specifications www.vicorpower.com
industrial, test automation, LED lighting, and “out of the box” across the full breadth of its
Advertising Index
ABB Semiconductor C3+1 Hitachi 43 Plexim 21
Alpha & Omega 47 Hollmén 13 Recom Power 27
Allegro 17 Husum Wind 62 Ridley Engineering 61
Broadcom 11 Infineon C4 Rogers 9
Cornell Dubilier 15 ITPR 60 Rohm 7
Cwieme 53 IXYS 39 Semicon 48
Danfoss 45 LEM 5 Semikron 41
Dean Technology 47 Lodestone Pacific 59 Sensor & Test 57
Dr.-Ing. Seibt 52 Malico 49 Sirio Elettronica 37
ECCE 56 Mersen 51 SMT 36
ECCE EPE 58 Mitsubishi 31 Teledyne Lecroy 29
electronic concepts 1+25 Mornsun 59 USCi 19
Fuji Electric Europe 35 Payton Planar 55 Vincotech 23
GvA C2 PCIM Europe 54 VMI 49
Hioki 64 PEMD 53 Würth 3

—
IGCTs.
Highest power density for
most compact equipment.
The IGCT is the semiconductor of choice for demanding high-power

applications such as wind power converters, medium-voltage drives,
pumped hydro, marine drives, co-generation, interties and FACTS.
ABB Semiconductors’ range of 4500 to 6500 volt asymmetric, reverse
conducting and reverse blocking IGCTs deliver highest power density
and reliability together with low on-state losses.
www.abb.com/semiconductors
Visit us at PCIM 2017
hall 9, booth 412
Infineon CoolSiC™ Technology –

Revolution to rely on
Focusing on key SiC applications, our SiC based semiconductor solutions enable our customers to develop highly
competitive, radical new product designs. Based on proven volume experience and compatibility know-how, we combine
revolutionary technology with mandatory reliability – making our customers successful today and tomorrow.
SiC characteristics bring unbeatable performance

› Doubling power density
› Boosted efficiency
› Reduction of total system cost
› Smaller housing and design
www.infineon.com/CoolSiC

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ISSN: 1863-5598 ZKZ 64717

Electronics in Motion and Conversion April 2017

ENGINEERING PRODUCTION GvA SOLUTIONS DISTRIBUTION

POWER IS IN OUR NATURE!

Distribution Power for your success!

Competent application support

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film capacitors and current and voltage sensors

Customized logistic service

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Phone +49 (0) 621/7 89 92-0

ABB is one of the world’s leading suppliers of high-

Viewpoint............................................................................................ 4 IGBT Modules ........................................................................... 28-30

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2 Bodo´s Power Systems® April 2017 www.bodospower.com

PCIM Europe Hall 7 Booth 229

REDCUBE PRESS-FIT REDCUBE PLUG REDCUBE SMD REDCUBE THR

ETG Bauelemente der Leistungselektronik ISiCPEAW 2017 SEMICON West 2017

ExpoElectronica 2017 Sensor + Test 2017 EPE ECCE 2017

SMT Hybrid 2017 Intersolar 2017 HusumWind 2017

4 Bodo´s Power Systems® April 2017 www.bodospower.com

www.lem.com At the heart of power electronics.

Prof. Dr. Leo Lorenz honored with Dr. HC of Valencia University

Dr.-Ing. Frank Osterwald is appointed to be

6th Power Analysis & Design Symposium

6 Bodo´s Power Systems® April 2017 www.bodospower.com

Wireless Power Design Kit

Main Features: Applications:

Final Regulatory Approval for Renesas’ Acquisition of Intersil

Announcing Collaboration Sales in Japan

Photo: (left to right) Erwin Ysewijn, Managing Directror SEMIKRON www.rohm.com/eu

Respect for Journalists

High performance materials

NEW Explore the

Power Inductors and Capacitors Featured in Module Solutions

Welcoming Twining as Vice President, Marketing

Freedom for Journalists

IEC 60747-5-5 Certified

ICT Announce the Acquisition of CS&E

Call for Papers for the first Passive Component Networking

ECPE Tutorials and Workshops in 2017

Respect Free Press

LASER WELDED COOLING SOLUTIONS

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Superior heat dissipation capability Fast

SERVICES DEVELOPED TOGETHER BOOTH:

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Dynamic and static pressure testing

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Heat pipe assemblies

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Heat and liquid flow simulations

PCIM Europe 2017

Auxiliary Power Supply

About Richardson RFPD

More information is available online at:

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www.bodospower.com April 2017 Bodo´s Power Systems® 29