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FJP13009 High Voltage Fast-Switching NPN Power Transistor

March 2007

FJP13009
High Voltage Fast-Switching NPN Power Transistor
• High Voltage Capability
• High Switching Speed
• Suitable for Electronic Ballast and Switching Mode Power Supply

1 TO-220

1.Base 2.Collector 3.Emitter

Absolute Maximum Ratings* TC = 25°C unless otherwise noted (notes_1)

Symbol Parameter Value Units

VCBO Collector-Base Voltage 700 V
VCEO Collector-Emitter Voltage 400 V
VEBO Emitter-Base Voltage 9 V
IC Collector Current (DC) 12 A
ICP Collector Current (Pulse) 24 A
IB Base Current 6 A
PC Collector Dissipation (TC = 25°C) 100 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature Range -65 ~ 150 °C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES_1:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Package Marking and Ordering Information

Device Item (notes_2) Device Marking Package Packing Method Qty(pcs)
FJP13009 J13009 TO-220 Bulk 1,200
FJP13009H2TU J130092 TO-220 TUBE 1,000
FJP13009TU J13009 TO-220 TUBE 1,000
Notes_2 :
1) The Affix “-H2” means the hFE classification.
2) The Suffix “-TU” means the Tube packing method, which can be on fairchildsemi website at http://www.fairchildsemi.com/packaging.

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FJP13009 High Voltage Fast-Switching NPN Power Transistor

Electrical Characteristics TC = 25°C unless otherwise noted

Symbol Parameter Conditions Min. Typ. Max Units

VCEO(sus) Collector-Emitter Sustaining Voltage IC = 10mA, IB = 0 400 V
IEBO Emitter Cut-off Current VEB = 9V, IC = 0 1 mA
hFE * DC Current Gain VCE = 5V, IC = 5A (hFE1) 8 40
VCE = 5V, IC = 8A 6 30
VCE(sat) * Collector-Emitter Saturation Voltage IC = 5A, IB = 1A 1 V
IC = 8A, IB = 1.6A 1.5 V
IC = 12A, IB = 3A 3 V
VBE (sat) * Base-Emitter Saturation Voltage IC = 5A, IB = 1A 1.2 V
IC = 8A, IB = 1.6A 1.6 V
Cob Output Capacitance VCB = 10V, f = 0.1MHz 180 pF
fT Current Gain Bandwidth Product VCE = 10V, IC = 0.5A 4 MHz
tON Turn On Time VCC = 125V, IC = 8A 1.1 µs
IB1 = - IB2 = 1.6A, RL = 15,6Ω
tSTG Storage Time 3 µs
tF Fall Time 0.7 µs
* Pulse Test: PW ≤ 300µs, Duty Cycle ≤ 2%

hFE Classification
Classification H1 H2
hFE1 8 ~ 17 15 ~ 28

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FJP13009 High Voltage Fast-Switching NPN Power Transistor

Typical Performance Characteristics

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

100 10

VCE = 5V IC = 3 IB
hFE, DC CURRENT GAIN

1 VBE(sat)

10

0.1
VCE(sat)

1 0.01
0.1 1 10 100 0.1 1 10 100

IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 1. DC current Gain Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

1000 10000

VCC=125V
IC=5IB
tR, tD [ns], TURN ON TIME
Cob[pF], CAPACITANCE

100 1000
tR

10 100 tD, VBE(off)=5V

1 10
0.1 1 10 100 1000 0.1 1 10 100

VCB[V], COLLECTOR BASE VOLTAGE IC[A], COLLECTOR CURRENT

Figure 3. Collector Output Capacitance Figure 4. Turn On Time

10000 100
VCC=125V
IC=5IB
tSTG, tF [ns], TURN OFF TIME

10
IC[A], COLLECTOR CURRENT

µs
10

10
0µ
s
1m

tSTG
DC

1000 1

0.1

tF

100 0.01
0.1 1 10 100 1 10 100 1000

IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE

Figure 5. Turn Off Time Figure 6. Forward Bias Safe Operating Area

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FJP13009 High Voltage Fast-Switching NPN Power Transistor

Typical Performance Characteristics (Continued)

100 120
Vcc=50V,
IB1=1A, IB2 = -1A
100

PC[W], POWER DISSIPATION

L = 1mH
IC[A], COLLECTOR CURRENT

10

80

1 60

40

0.1

20

0.01 0
10 100 1000 10000 0 25 50 75 100 125 150 175

VCE[V], COLLECTOR-EMITTER VOLTAGE o

TC[ C], CASE TEMPERATURE

Figure 7. Reverse Bias Safe Operating Area Figure 8. Power Derating

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FJP13009 High Voltage Fast-Switching NPN Power Transistor

Mechanical Dimensions

TO-220

9.90 ±0.20 4.50 ±0.20

1.30 ±0.10
(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

Dimensions in Millimeters

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LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support,
which, (a) are intended for surgical implant into the body or device, or system whose failure to perform can be
(b) support or sustain life, and (c) whose failure to perform reasonably expected to cause the failure of the life support
when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness.
provided in the labeling, can be reasonably expected to
result in a significant injury of the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary First Production This datasheet contains preliminary data; supplementary data will be
published at a later date. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve design.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor
reserves the right to make changes at any time without notice to improve
design.
Obsolete Not In Production This datasheet contains specifications on a product that has been
discontinued by Fairchild Semiconductor. The datasheet is printed for
reference information only.

Rev. I24

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