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2sd1918 209626

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2SD1918

NPN 1.5A 160V Middle Power Transistor Datasheet

lOutline
Parameter Value CPT3 Collector

VCEO 160V
IC 1.5A Base

Emitter
2SD1918
lFeatures
(SC-63)
1) Suitable for Middle Power Driver <SOT-428>
2) Complementary PNP Types : 2SB1275
3) High voltage : VCEO=160V
4) Lead Free/RoHS Compliant.

lInner circuit
Collector
lApplications
Base Motor driver , LED driver
Power supply

Emitter

lPackaging specifications
Package Basic
Taping Reel size Tape width
Part No. Package size ordering Marking
code (mm) (mm)
(mm) unit (pcs)
2SD1918 CPT3 6595 TL 330 16 2,500 D1918

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© 2013 ROHM Co., Ltd. All rights reserved. 1/6 2013.07 - Rev.D
2SD1918 Data Sheet

lAbsolute maximum ratings (Ta = 25°C)


Parameter Symbol Values Unit
Collector-base voltage VCBO 160 V
Collector-emitter voltage VCEO 160 V
Emitter-base voltage VEBO 5 V
DC IC 1.5 A
Collector current *1
Pulsed ICP 3.0 A
*2
PD 1 W
Power dissipation *3
PD 10 W
Junction temperature Tj 150 °C
Range of storage temperature Tstg -55 to +150 °C
*1 Pw=20ms , duty=1/2
*2 Mounted on a substrate
*3 Tc=25°C

lElectrical characteristics(Ta = 25°C)


Parameter Symbol Conditions Min. Typ. Max. Unit
Collector-emitter
BVCEO IC = 1mA 160 - - V
breakdown voltage
Collector-base
BVCBO IC = 50mA 160 - - V
breakdown voltage
Emitter-base
BVEBO IE = 50mA 5 - - V
breakdown voltage

Collector cut-off current ICBO VCB = 120V - - 1 mA

Emitter cut-off current IEBO VEB = 4V - - 1 mA

Collector-emitter
VCE(sat) *4 IC = 1A, IB = 0.1A - - 2 V
saturation voltage

DC current gain hFE VCE = 5V, IC = 100mA 120 - 390 -

VCE = 5V, IE = -100mA


Transition frequency fT - 80 - MHz
f=30MHZ
VCB = 10V, IE = 0A,
Output capacitance Cob - 20 - pF
f = 1MHz
*4 Pulsed

lhFE rank categories


Rank Q R
hFE 120 to 270 180 to 390

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© 2013 ROHM Co., Ltd. All rights reserved. 2/6 2013.07 - Rev.D
2SD1918 Data Sheet

lElectrical characteristic curves(Ta = 25°C)

Fig.1 Ground Emitter Propagation Characteristics Fig.2 Typical Output Characteristics

10000
VCE= 5V
Ta=100ºC Pulsed

COLLECTOR CURRENT : IC [mA]


COLLECTOR CURRENT : IC [A]

25ºC
1000 -25ºC

100

10

1
0 0.5 1 1.5

BASE TO EMITTER VOLTAGE : VBE [V] COLECTOR TO EMITTE VOLTAGE : VCE [V]

Fig.3 DC Current Gain vs. Collector Current(I) Fig.4 DC current gain vs. output current (II)
DC CURRENT GAIN : hFE

DC CURRENT GAIN : hFE

COLLECTOR CURRENT : IC [A] COLLECTOR CURRENT : IC [A]

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© 2013 ROHM Co., Ltd. All rights reserved. 3/6 2013.07 - Rev.D
2SD1918 Data Sheet

lElectrical characteristic curves(Ta = 25°C)

Fig.5 Collector-Emitter Saturation Voltage Fig.6 Collector-Emitter Saturation Voltage


vs. Collector Current (I) vs. Collector Current (II)
SATURATION VOLTAGE : VCE(sat) [V]

SATURATION VOLTAGE : VCE(sat) [V]


COLLECTOR-EMITTER

COLLECTOR-EMITTER

COLLECTOR CURRENT : IC [A] COLLECTOR CURRENT : IC [mA]

Fig.7 Base-Emitter Saturation Voltage Fig.8 Gain Bandwidth Product


vs. Collector Current vs. Emitter Current
TRANSITION FREQUENCY : fT [MHz]
SATURATION VOLTAGE : VBE(sat) [V]
BASE-EMITTER

COLLECTOR CURRENT : IC [A] EMITTER CURRENT :IE [mA]

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© 2013 ROHM Co., Ltd. All rights reserved. 4/6 2013.07 - Rev.D
2SD1918 Data Sheet

lElectrical characteristic curves(Ta = 25°C)

Fig.9 Collector output capacitance vs. Fig.10 Safe Operating Area


Collector-Base Voltage
COLLECTOR OUTPUT CAPACITANCE : Cob [pF]

COLLECTOR CURRENT : IC [A]


DC
(Mounted on a
reference land)

Ta=25ºC
*Single non repetitive pulse

COLLECTOR - BASE VOLTAGE : VCB [V] COLLECTOR TO EMITTER VOLTAGE : VCE [V]

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© 2013 ROHM Co., Ltd. All rights reserved. 5/6 2013.07 - Rev.D
2SD1918 Data Sheet

lDimensions (Unit : mm) D


A2
B
A
b1 c1

CPT3

L2
L3

H
A1

L4
b2

b3

Lp
L1
c
e b
x B A A3

l3

l2 l1

b5
b6

e
Pattern of terminal position areas
[Not a recommended pattern of soldering pads]

DIM MILIMETERS INCHES


MIN MAX MIN MAX
A1 0.00 0.15 0.000 0.006
A2 2.20 2.50 0.087 0.098
A3 0.25 0.010
b 0.55 0.75 0.022 0.030
b1 5.00 5.30 0.197 0.209
b2 5.00 0.197
b3 0.75 0.030
c 0.40 0.60 0.016 0.024
c1 0.40 0.60 0.016 0.024
D 6.30 6.70 0.248 0.264
E 5.40 5.80 0.213 0.228
e 2.30 0.091
HE 9.00 10.00 0.354 0.394
L 2.20 2.80 0.087 0.110
L1 0.80 1.40 0.031 0.055
L2 1.20 1.80 0.047 0.071
L3 5.30 0.209
L4 0.90 0.035
Lp 1.00 1.60 0.039 0.063
x - 0.25 - 0.010

DIM MILIMETERS INCHES


MIN MAX MIN MAX
b5 - 1.00 - 0.04
b6 - 5.20 - 0.205
l1 - 2.50 - 0.098
l2 - 5.50 - 0.217
l3 - 10.00 - 0.394

Dimension in mm / inches

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© 2013 ROHM Co., Ltd. All rights reserved. 6/6 2013.07 - Rev.D
Notice

Notes
1) The information contained herein is subject to change without notice.

2) Before you use our Products, please contact our sales representative and verify the latest specifica-
tions :

3) Although ROHM is continuously working to improve product reliability and quality, semicon-
ductors can break down and malfunction due to various factors.
Therefore, in order to prevent personal injury or fire arising from failure, please take safety
measures such as complying with the derating characteristics, implementing redundant and
fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no
responsibility for any damages arising out of the use of our Poducts beyond the rating specified by
ROHM.

4) Examples of application circuits, circuit constants and any other information contained herein are
provided only to illustrate the standard usage and operations of the Products. The peripheral
conditions must be taken into account when designing circuits for mass production.

5) The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly,
any license to use or exercise intellectual property or other rights held by ROHM or any other
parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of
such technical information.

6) The Products are intended for use in general electronic equipment (i.e. AV/OA devices, communi-
cation, consumer systems, gaming/entertainment sets) as well as the applications indicated in
this document.

7) The Products specified in this document are not designed to be radiation tolerant.

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equipment, medical systems, servers, solar cells, and power transmission systems.

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equipment, nuclear power control systems, and submarine repeaters.

10) ROHM shall have no responsibility for any damages or injury arising from non-compliance with
the recommended usage conditions and specifications contained herein.

11) ROHM has used reasonable care to ensur the accuracy of the information contained in this
document. However, ROHM does not warrants that such information is error-free, and ROHM
shall have no responsibility for any damages arising from any inaccuracy or misprint of such
information.

12) Please use the Products in accordance with any applicable environmental laws and regulations,
such as the RoHS Directive. For more details, including RoHS compatibility, please contact a
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