Irf 7403
Irf 7403
Irf 7403
1245B
PRELIMINARY IRF7403
HEXFET® Power MOSFET
l Generation V Technology
A
l Ultra Low On-Resistance 1 8
A
S D
l N-Channel Mosfet VDSS = 30V
2 7
l Surface Mount S D
l Fast Switching
G 5
D RDS(on) = 0.022Ω
T op V iew
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve the lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced
thermal characteristics and multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple devices can be used in S O -8
an application with dramatically reduced board space. The package is designed
for vapor phase, infra red, or wave soldering techniques. Power dissipation of
greater than 0.8W is possible in a typical PCB mount application.
8/25/97
IRF7403
––– ––– 34
(Body Diode) p-n junction diode. S
VSD Diode Forward Voltage ––– ––– 1.0 V TJ = 25°C, IS = 2.0A, VGS = 0V
t rr Reverse Recovery Time ––– 52 78 ns TJ = 25°C, IF = 4.0A
Qrr Reverse RecoveryCharge ––– 93 140 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
I SD ≤ 4.0A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS, Surface mounted on FR-4 board, t ≤ 10sec.
TJ ≤ 150°C
IRF7403
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8. 0V
7.0V 7. 0V
I , D ra in -to -S o u rce C u rre n t (A )
4.5V
4.5 V
10 10
D
D
20 µs P UL SE W ID TH 20µ s PU L SE W ID TH
TJ = 25°C TJ = 1 50 °C
1 A 1 A
0.01 0.1 1 10 100 0.01 0.1 1 10 100
V D S , Drain-to-Source V oltage (V ) V D S , Drain-to-S ource V oltage (V)
2.0
1000 I D = 6.7 A
R D S (o n ) , D ra in -to -S o u rc e O n R e sis ta n c e
I D , Drain-to-Source Current (A)
1.5
TJ = 25 ° C
(N o rm a liz e d )
100 1.0
TJ = 150 ° C
0.5
V DS = 50V
15V
20µs PULSE WIDTH V G S = 10 V
10 0.0 A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
T J , Junction T emperature (°C)
2400 20
V GS = 0V, f = 1M H z I D = 4.0A
C iss = C gs + C gd , C ds SH O R TED VDS = 2 4V
V G S , G a te -to -S o u rc e V o lta g e (V )
C rss = C gd
2000 C oss = C ds + C gd 16
C , C a p a c ita n c e (p F )
C i ss
1600
12
C o ss
1200
8
800
C rs s 4
400
FO R TES T C IR CU IT
SEE FIG U RE 12
0 A 0 A
1 10 100 0 10 20 30 40 50 60
V D S , Drain-to-Source V oltage (V) Q G , Total Gate Charge (nC )
100 100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
IS D , R e ve rs e D ra in C u rre n t (A )
10 100us
TJ = 1 50 °C TJ = 25 °C 10
1ms
1
TA = 25 ° C 10ms
TJ = 150 ° C
VG S = 0 V Single Pulse
0.1 A 1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.1 1 10 100
V S D , Source-to-Drain Voltage (V ) VDS , Drain-to-Source Voltage (V)
RD
VDS
VGS
10.0 D.U.T.
RG
+
- VDD
8.0
10 V
I D , Drain Current (A)
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6.0
0.0 10%
25 50 75 100 125 150
VGS
T C , Case Temperature ( ° C)
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Ambient Temperature
100
(Z thJA )
D = 0.50
10 0.20
0.10
Thermal Response
0.05
0.02 PDM
1
0.01 t1
SINGLE PULSE t2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.1
0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
QG .3µF
+
10 V V
D.U.T. - DS
QGS QGD
VGS
VG 3mA
IG ID
Charge Current Sampling Resistors
Fig 12a. Basic Gate Charge Waveform Fig 12b. Gate Charge Test Circuit
IRF7403
+
- +
-
**
RG • dv/dt controlled by RG +
• I SD controlled by Duty Factor "D" *
VDD
-
• D.U.T. - Device Under Test
VGS*
[VGS=10V ] ***
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[ VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% [ ISD]
Package Outline
SO-8 Outline
Dimensions are shown in millimeters (inches)
INCHES MILLIMETERS
D DIM
5 MIN MAX MIN MAX
-B-
A .0532 .0688 1.35 1.75
A1 .0040 .0098 0.10 0.25
8 7 6 5
5 B .014 .018 0.36 0.46
E H
-A- 0.25 (.010) M A M C .0075 .0098 0.19 0.25
1 2 3 4
D .189 .196 4.80 4.98
E .150 .157 3.81 3.99
e e .050 BASIC 1.27 BASIC
K x 45°
6X e1 e1 .025 BASIC 0.635 BASIC
θ
A H .2284 .2440 5.80 6.20
0.25 (.010) M C A S B S θ 0° 8° 0° 8°
RECOMMENDED FOOTPRINT
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982. 0.72 (.028 )
8X
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46 ( .255 ) 1.78 (.070)
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X
E X A M P LE : TH IS IS A N IR F 7 101
D A T E C O D E (Y W W )
Y = LA S T D IG IT O F T H E YE A R
W W = W EEK
3 12
IN T E R N A TI ON A L XX X X
F 7 101
R E C T IF IE R W AFER
LO G O LO T C O D E
PART NUMBER
T OP (LA S T 4 D IG IT S ) B O T TO M
IRF7403
4 .1 0 (. 16 1) 1 .8 5 (. 07 2)
3 .9 0 (. 15 4) 1 .6 5 (. 06 5) 0 .35 (.0 13 )
0 .25 (.0 10 )
2 .0 5 (. 08 0) 1 .60 (. 06 2)
T E R M IN AT IO N
1 .9 5 (. 07 7) 1 .50 (. 05 9)
NU MB E R 1
5.5 5 (. 21 8)
1 5.4 5 (. 21 5) 12 .30 (.4 8 4)
5.3 0 (. 20 8) 11 .70 (.4 6 1)
5.1 0 (. 20 1)
1 3. 20 (.5 19 ) 1 5. 40 (.6 07 )
1 1. 90 (.4 69 )
1 2. 80 (.5 04 )
2
3 30 .00 50 .0 0
(13 .00 0) (1.9 69 )
MAX. M IN .
18 .4 0 (.72 4)
N O TE S : MAX 3
1 C O N F O R M S T O E IA-4 81 -1 1 4. 40 (.5 66 )
1 2. 40 (.4 48 )
2 IN C L U D ES F LA N G E D IS T O R T IO N @ O U T E R E D G E 3
3 D IM E N SIO N S M E AS U R E D @ H U B
4 C O N T R O L LIN G D IM EN S IO N : M E T R IC
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/97