PD - 91482C

IRF9530N
HEXFET® Power MOSFET
l Advanced Process Technology
D
l Dynamic dv/dt Rating VDSS = -100V
l 175°C Operating Temperature
l Fast Switching RDS(on) = 0.20Ω
l P-Channel G
l Fully Avalanche Rated ID = -14A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal TO-220AB
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -14
ID @ TC = 100°C Continuous Drain Current, VGS @ -10V -10 A
IDM Pulsed Drain Current  -56
PD @TC = 25°C Power Dissipation 79 W
Linear Derating Factor 0.53 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚ 250 mJ
IAR Avalanche Current -8.4 A
EAR Repetitive Avalanche Energy 7.9 mJ
dv/dt Peak Diode Recovery dv/dt ƒ -5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.9
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62

5/13/98
IRF9530N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -100 ––– ––– V VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.11 ––– V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.20 Ω VGS = -10V, ID = -8.4A „
VGS(th) Gate Threshold Voltage -2.0 ––– -4.0 V VDS = V GS, ID = -250µA
gfs Forward Transconductance 3.2 ––– ––– S VDS = -50V, ID = -8.4A
––– ––– -25 VDS = -100V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– -250 VDS = -80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 58 ID = -8.4A
Qgs Gate-to-Source Charge ––– ––– 8.3 nC VDS = -80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 32 VGS = -10V, See Fig. 6 and 13 „
td(on) Turn-On Delay Time ––– 15 ––– VDD = -50V
tr Rise Time ––– 58 ––– ID = -8.4A
ns
td(off) Turn-Off Delay Time ––– 45 ––– RG = 9.1Ω
tf Fall Time ––– 46 ––– RD = 6.2Ω, See Fig. 10 „
D
Between lead,
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 760 ––– VGS = 0V

Coss Output Capacitance ––– 260 ––– pF VDS = -25V
Crss Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– -14

(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– -56
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– -1.6 V TJ = 25°C, IS = -8.4A, VGS = 0V „
trr Reverse Recovery Time ––– 130 190 ns TJ = 25°C, I F = -8.4A
Qrr Reverse RecoveryCharge ––– 650 970 nC di/dt = -100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by ƒ ISD ≤ -8.4A, di/dt ≤ -490A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. ( See fig. 11 ) TJ ≤ 175°C
‚ Starting TJ = 25°C, L = 7.0mH „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = -8.4A. (See Figure 12)
 IRF9530N

100 100
VGS VGS
TO P - 15V TOP - 15V
- 10V - 10V
- 8.0V - 8.0V
- 7.0V - 7.0V
-ID , D rain-to-S ou rc e C urre nt (A )

-ID , D rain-to-S ource C urrent (A )

- 6.0V - 6.0V
- 5.5V - 5.5V
- 5.0V - 5.0V
BOT TOM - 4.5V BOTTOM - 4.5V
10 10

-4.5V
1 -4.5 V 1

2 0µ s P U LS E W ID TH 2 0µ s P U LS E W ID T H
T c = 2 5°C A T C = 1 75 °C
0.1 0.1 A
0.1 1 10 100 0.1 1 10 100
-VD S , D rain-to-S ourc e V oltage (V ) -VD S , D rain-to-S ource V oltage (V )

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

2.5
100 ID = -14A
R DS(on) , Drain-to-Source On Resistance
-I D , D rain-to-S ource C urrent (A)

2.0

T J = 2 5 °C
10
(Normalized)

TJ = 1 7 5 °C 1.5

1.0
1

0.5

V DS = -5 0 V
VGS = -10V
2 0µ s P U L S E W ID TH 0.0
0.1
4 5 6 7 8 9 10
A -60 -40 -20 0 20 40 60 80 100 120 140 160 180

-VG S , Ga te -to-Source Volta ge (V) TJ , Junction Temperature ( °C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRF9530N

2000 20
V GS = 0V , f = 1MHz ID = -8.4A
VDS =-80V
C iss = C g s + C g d , C d s S H O R TE D
VDS =-50V

-VGS , Gate-to-Source Voltage (V)

C rs s = C gd
VDS =-20V
1600 C o ss = C ds + C g d
15
C , Capacitance (pF)

1200
C iss
10

800
C oss

C rss 5
400

FOR TEST CIRCUIT

SEE FIGURE 13
0 A 0
1 10 100 0 10 20 30 40 50 60

-VD S , D rain-to-S ourc e V oltage (V ) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
-I S D , Reverse D rain Current (A )

T J = 15 0°C
-II D , Drain Current (A)

10 100
10us
T J = 25 °C

100us
1 10

1ms
TC = 25 ° C
TJ = 175 ° C
10ms
V G S = 0V Single Pulse
0.1 A 1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 10 100 1000
-VS D , S ourc e-to-D rain V oltage (V ) -VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRF9530N

14 RD
VDS
12
VGS
D.U.T.
RG
-ID , Drain Current (A)

10 -
+ VDD

8 -10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6

4 Fig 10a. Switching Time Test Circuit

2 td(on) tr t d(off) tf
VGS
0 10%
25 50 75 100 125 150 175
TC , Case Temperature ( ° C)

90%
Fig 9. Maximum Drain Current Vs. VDS
Case Temperature
Fig 10b. Switching Time Waveforms

10
Thermal Response (Z thJC )

1 D = 0.50

0.20

0.10
0.05 P DM
0.1 0.02 SINGLE PULSE t1
0.01 (THERMAL RESPONSE)
t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRF9530N

VDS L 700
ID

EAS , Single Pulse Avalanche Energy (mJ)

TOP -3.4A
600 -5.9A
RG D .U .T
VD D BOTTOM -8.4A
IA S A
D R IV E R 500
-2 0 V
tp 0 .0 1Ω

400

300
15V
200

Fig 12a. Unclamped Inductive Test Circuit

100

0
25 50 75 100 125 150 175
IAS
Starting TJ , Junction Temperature ( °C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

tp
V (BR)DSS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ
QG 12V .2µF
.3µF
-10V -
QGS QGD D.U.T. +VDS

VGS
VG
-3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRF9530N
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T* • Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS

* Reverse Polarity of D.U.T for P-Channel

Driver Gate Drive

P.W.
Period D=
P.W. Period

[VGS=10V ] ***

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% [ ISD ]

*** VGS = 5.0V for Logic Level and 3V Drive Devices

Fig 14. For P-Channel HEXFETS
IRF9530N
Package Outline
TO-220AB Outline
Dimensions are shown in millimeters (inches)

10 .54 (.4 15) 3 .7 8 (.149 ) -B -

2.87 (.11 3) 10 .29 (.4 05) 3 .5 4 (.139 ) 4.69 ( .18 5 )
2.62 (.10 3) 4.20 ( .16 5 )
-A - 1 .32 (.05 2)
1 .22 (.04 8)
6.47 (.25 5)
6.10 (.24 0)
4
1 5.24 (.60 0)
1 4.84 (.58 4)
1.15 (.04 5) L E A D A S S IG NM E NT S
M IN 1 - GATE
1 2 3 2 - D R A IN
3 - S O U RC E
4 - D R A IN
1 4.09 (.55 5)
1 3.47 (.53 0) 4.06 (.16 0)
3.55 (.14 0)

0.93 (.03 7) 0.55 (.02 2)

3X 3X
0.69 (.02 7) 0.46 (.01 8)
1 .4 0 (.0 55 )
3X
1 .1 5 (.0 45 ) 0 .3 6 (.01 4) M B A M
2 .92 (.11 5)
2 .64 (.10 4)
2.54 (.10 0)
2X
N O TE S :
1 D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 1 4.5M , 1 9 82. 3 O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO -2 20 A B .
2 C O N TR O L LIN G D IM E N S IO N : IN C H 4 H E A TS IN K & LE A D M E A S U R E M E N T S D O N O T IN C LU DE B U R R S .

Part Marking Information

TO-220AB
E X AEMXPA LMEP :L ETH
: IS
TH IS A ISN AIR N F1 IR0F1
1 00 1 0
W ITWH ITAHS SAESMS BE LMYB L Y A A
L O TL OCTO D
C EO D9EB 19MB 1 M INRTE
IN TE N ARTIO
N A TIO
N A LN A L P A RPTA RNTU M
NBU EMRB E R
R E CRTIF
E C IE
TIFR IE R
IR F IR
10F110
0 10
L O GL O G O 9 2 4962 4 6
9B 9B 1M 1M D A TE C EO D E
D A TE COD
A S SAESMS BE LMYB L Y
(Y Y W W ) )
(Y Y W W
L O TL O TC O D C EO D E
Y Y Y=Y Y=E AYRE A R
W WW W = W= EW E KE E K

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http://www.irf.com/ Data and specifications subject to change without notice. 5/98