Fotransistor Hexing
Fotransistor Hexing
Fotransistor Hexing
RF1
Vishay Telefunken
Description
The TSOP12..RF1 – series are miniaturized receivers
for infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be de-
coded by a microprocessor. The main benefit is the
reliable function even in disturbed ambient and the
protection against uncontrolled output pulses.
13 640
Block Diagram
2
VS
Input Control
80 kW
Circuit
3
OUT
PIN
Band Demodu-
AGC Pass lator
1
GND
94 8136
Basic Characteristics
Tamb = 25_C
Parameter Test Conditions Symbol Min Typ Max Unit
Supply
y Current ((Pin 2)) VS = 5 V, Ev = 0 ISD 0.4 0.6 1.5 mA
VS = 5 V, Ev = 40 klx, sunlight ISH 1.0 mA
Supply Voltage (Pin 2) VS 4.5 5.5 V
Transmission Distance Ev = 0, test signal see fig.7, d 35 m
IR diode TSAL6200, IF = 400 mA
Output Voltage Low (Pin 3) IOSL = 0.5 mA,Ee = 0.7 mW/m2, VOSL 250 mV
f = fo, tp/T = 0.4
Irradiance (30 – 40 kHz) Pulse width tolerance: Ee min 0.35 0.5 mW/m2
tpi – 5/fo < tpo < tpi + 6/fo,
test signal see fig.7
Irradiance (56 kHz) Pulse width tolerance: Ee min 0.4 0.6 mW/m2
tpi – 5/fo < tpo < tpi + 6/fo,
test signal see fig.7
Irradiance tpi – 5/fo < tpo < tpi + 6/fo Ee max 30 W/m2
Directivity Angle of half transmission distance ϕ1/2 ±45 deg
Application Circuit
100 W *) +5V
4.7 mF *)
2
>10 kW
TSOP12..
optional
TSAL62..
3 mC
**)
1
12844
GND
*) recommended to suppress power supply disturbances
**) The output voltage should not be hold continuously at a voltage below 3.3V by the external circuit.
• After each burst which is between 10 cycles and 70 • DC light (e.g. from tungsten bulb or sunlight)
cycles a gap time of at least 14 cycles is neccessary. • Continuous signal at 38kHz or at any other
frequency
• For each burst which is longer than 1.8ms a
corresponding gap time is necessary at some time in • Signals from fluorescent lamps with electronic
the data stream. This gap time should be at least 4 ballast with high or low modulation (see Figure A or
times longer than the burst. Figure B).
0 5 10 15 20
time [ms]
0 5 10 15 20
time [s]
0.8 f ( E ) = f0
1.6
0.6
1.2
0.4
0.8
0.2
"5%
min
f = f0 0.4
eE
Df ( 3 dB ) = f0 / 10
0.0 0.0
0.7 0.8 0.9 1.0 1.1 1.2 1.3 0.0 0.4 0.8 1.2 1.6 2.0
94 8143 f / f0 – Relative Frequency 94 8147 E – Field Strength of Disturbance ( kV / m )
Figure 1. Frequency Dependence of Responsivity Figure 4. Sensitivity vs. Electric Field Disturbances
1.0 10
Ee min – Threshold Irradiance ( mW/m2 )
0.9 f = f0
tpo – Output Pulse Length (ms)
0.8 1 kHz
0.7 Input burst duration
0.6 10 kHz
0.5 1
0.4
0.3 l = 950 nm,
0.2 optical test signal, fig.7 100 Hz
0.1
0 0.1
0.1 1.0 10.0 100.0 1000.0 10000.0 0.01 0.1 1 10 100 1000
Figure 2. Sensitivity in Dark Ambient Figure 5. Sensitivity vs. Supply Voltage Disturbances
5.0 1.0
E e min – Threshold Irradiance (mW/m2 )
^
4.5 Correlation with ambient light sources
0.9
( Disturbance effect ) : 10W/m2 1.4 klx
4.0 ( Stand.illum.A, T = 2855 K ) 8.2 klx^ 0.8
Sensitivity in dark ambient
t 0.7
600 ms 600 ms
0.6
T = 60 ms 0.5
94 8134 0.4
0.3
Output Signal, ( see Fig.10 )
VO 0.2
VOH 0.1
0
VOL –30 –15 0 15 30 45 60 75 90
t
Ton Toff 96 12115 Tamb – Ambient Temperature ( °C )
Figure 8. Output Function Figure 11. Supply Current vs. Ambient Temperature
0.8 1.2
S ( l ) rel – Relative Spectral Sensitivity
0.7 1.0
0.6
Envelope Duty Cycle
0.8
0.5
0.4 0.6
0.3
0.4
0.2
0.2
0.1
0 0
10 20 30 40 50 60 70 80 90 750 850 950 1050 1150
16153 Burstlength [number of cycles/burst] 94 8408 l – Wavelength ( nm )
Figure 9. Max. Envelope Duty Cycle vs. Burstlength Figure 12. Relative Spectral Sensitivity vs. Wavelength
40° 40°
1.0 1.0
70° 70°
0.7 0.7
80° 80°
0.6 0.4 0.2 0 0.2 0.4 0.6 0.6 0.4 0.2 0 0.2 0.4 0.6
95 11339p2 drel – Relative Transmission Distance 95 11340p2 drel – Relative Transmission Distance
12760
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.