VISHAY

TSOP44..QJ1
Vishay Semiconductors

IR Receiver Modules for Remote Control Systems

Description
The TSOP44..QJ1 - series are miniaturized receivers
for infrared remote control systems. PIN diode and
preamplifier are assembled on lead frame, the epoxy
package is designed as IR filter.
The demodulated output signal can directly be
decoded by a microprocessor. The main benefit is the
reliable function even in disturbed ambient and the
protection against uncontrolled output pulses.
1
2 16652
3
Features
• Photo detector and preamplifier in one package
• Internal filter for PCM frequency
• Improved shielding against electrical field
disturbance
• TTL and CMOS compatibility
• Output active low
Parts Table
• Low power consumption
Part Carrier Frequency
TSOP4430QJ1 30 kHz
Special Features
TSOP4433QJ1 33 kHz
• Improved immunity against ambient light
TSOP4436QJ1 36 kHz
• Suitable burst length ≥ 10 cycles/burst
TSOP4437QJ1 36.7 kHz
TSOP4438QJ1 38 kHz
Mechanical Data
TSOP4440QJ1 40 kHz
Pinning:
TSOP4456QJ1 56 kHz
1 = OUT, 2 = GND, 3 = VS

Block Diagram
Application Circuit
16833
3
VS
30 kΩ 16842
R1 = 100 Ω
1 Transmitter TSOPxxxx
with VS +VS
Band Demo- OUT TSALxxxx C1 =
Input AGC
Circuit

Pass dulator 4.7 µF

µC
2 OUT
VO
PIN GND GND
Control Circuit GND

R1 + C1 recommended to suppress power supply

disturbances.
The output voltage should not be hold continuously at
a voltage below VO = 3.3 V by the external circuit.

Document Number 82254 www.vishay.com

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Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Supply Voltage (Pin 3 VS - 0.3 to + 6.0 V
Supply Current (Pin 3) IS 5 mA
Output Voltage (Pin 1) VO - 0.3 to + 6.0 V
Output Current (Pin 1) IO 5 mA
Junction Temperature Tj 100 °C
Storage Temperature Range Tstg - 25 to + 85 °C
Operating Temperature Range Tamb - 25 to + 85 °C
Power Consumption (Tamb ≤ 85 °C) Ptot 50 mW
Soldering Temperature t ≤ 5 s, 1 mm from case Tsd 260 °C

Electrical and Optical Characteristics

Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Min Typ. Max Unit
Supply Current (Pin 3) VS = 5 V, Ev = 0 ISD 0.8 1.2 1.5 mA
VS = 5 V, Ev = 40 klx, sunlight ISH 1.5 mA
Transmission Distance Ev = 0, test signal see fig.1, d 35 m
IR diode TSAL6200,
IF = 250 mA
Supply Voltage VS 4.5 5.5 V
Output Voltage Low (Pin 3) IOSL = 0.5 mA, Ee = 0.7 mW/m , 2 VOL 250 mV
test signal see fig. 1
Irradiance (56 kHz) Pulse width tolerance: Ee min 0.3 0.5 mW/m2
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Irradiance (30-40 kHz) Pulse width tolerance: Ee min 0.2 0.4 mW/m2
tpi - 5/fo < tpo < tpi + 6/fo,
test signal see fig.1
Irradiance tpi - 5/fo < tpo < tpi + 6/fo, Ee max 30 W/m2
test signal see fig. 1
Directivity Angle of half transmission ϕ1/2 ± 45 deg
distance

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TSOP44..QJ1
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Typical Characteristics (Tamb = 25 °C unless otherwise specified)

Ee Optical Test Signal
(IR diode TSAL6200, IF = 0.4 A, 30 pulses, f = f0, T = 10 ms)
1.0

Ton ,Toff – Output Pulse Width ( ms )

0.9
0.8
Ton
t 0.7
tpi * 0.6
T 0.5
Toff
* tpi w 10/fo is recommended for optimal function 0.4
Output Signal 16110 0.3
VO
1) 7/f0 < td < 15/f0 0.2 l = 950 nm,
VOH 2) optical test signal, fig.3
tpi–5/f0 < tpo < tpi+6/f0 0.1
0.0
VOL
tpo2 ) t 0.1 1.0 10.0 100.0 1000.010000.0
td1 )
16909 Ee – Irradiance ( mW/m2 )

Figure 1. Output Function Figure 4. Output Pulse Diagram

1.2
1.0
Output Pulse
E e min / E e – Rel. Responsivity
0.9 1.0
t po – Output Pulse Width ( ms )

0.8
0.7 Input Burst Duration 0.8
0.6
0.6
0.5
0.4 0.4
0.3
0.2 f = f0"5%
0.2 l = 950 nm,
Df ( 3dB ) = f0/10
0.1 optical test signal, fig.1
0.0
0.0
0.7 0.9 1.1 1.3
0.1 1.0 10.0 100.0 1000.010000.0
16925 f/f0 – Relative Frequency
16908 Ee – Irradiance ( mW/m2 )

Figure 2. Pulse Length and Sensitivity in Dark Ambient Figure 5. Frequency Dependence of Responsivity

Optical Test Signal

Ee
4.0
Ee min– Threshold Irradiance ( mW/m 2 )

Correlation with ambient light sources:

3.5
10W/m2^1.4klx (Std.illum.A,T=2855K)
3.0 10W/m2^8.2klx (Daylight,T=5900K)
t
600 ms 600 ms
2.5
T = 60 ms 2.0

1.5
Output Signal, ( see Fig.4 ) 94 8134 Ambient, l = 950 nm
VO
1.0
VOH 0.5

0.0
VOL
t 0.01 0.10 1.00 10.00 100.00
Ton Toff
16911 E – Ambient DC Irradiance (W/m2)

Figure 3. Output Function Figure 6. Sensitivity in Bright Ambient

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Vishay Semiconductors

2.0 0.6
Ee min– Threshold Irradiance ( mW/m 2 )

Ee min– Threshold Irradiance ( mW/m 2 )

0.5 Sensitivity in dark ambient
f = fo
1.5
f = 10 kHz 0.4

1.0 0.3
f = 1 kHz

0.2
0.5
0.1
f = 100 Hz
0.0 0.0
0.1 1.0 10.0 100.0 1000.0 –30 –15 0 15 30 45 60 75 90
16912 DVsRMS – AC Voltage on DC Supply Voltage (mV) 16918 Tamb – Ambient Temperature ( qC )

Figure 7. Sensitivity vs. Supply Voltage Disturbances Figure 10. Sensitivity vs. Ambient Temperature
E e min– Threshold Irradiance ( mW/m 2 )

1.2
S ( l ) rel – Relative Spectral Sensitivity

2.0
f(E) = f0 1.0
1.6
0.8
1.2
0.6
0.8
0.4

0.4
0.2

0.0
0.0
0.0 0.4 0.8 1.2 1.6 2.0
750 850 950 1050 1150
94 8147 E – Field Strength of Disturbance ( kV/m )
16919 l – Wavelength ( nm )

Figure 8. Sensitivity vs. Electric Field Disturbances Figure 11. Relative Spectral Sensitivity vs. Wavelength

0° 10° 20°
0.4 30°
Max. Envelope Duty Cycle

0.3
40°
1.0
0.2 0.9 50°

0.8 60°
0.1
70°
f = 38 kHz, Ee = 2 mW/m2 0.7
80°
0.0
10 30 50 70 90 110 0.6 0.4 0.2 0 0.2 0.4 0.6
16917 Burst Length ( number of cycles / burst ) 96 12223p2 drel - Relative Transmission Distance

Figure 9. Max. Envelope Duty Cycle vs. Burstlength Figure 12. Directivity

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TSOP44..QJ1
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Suitable Data Format

The circuit of the TSOP44..QJ1 is designed in that
way that unexpected output pulses due to noise or
disturbance signals are avoided. A bandpass filter, an
integrator stage and an automatic gain control are
used to suppress such disturbances.

IR Signal
The distinguishing mark between data signal and dis-
turbance signal are carrier frequency, burst length
and duty cycle.
The data signal should fulfill the following conditions: IR Signal from fluorescent
lamp with low modulation
• Carrier frequency should be close to center fre-
quency of the bandpass (e.g. 38 kHz).
0 5 10 15 20
• Burst length should be 10 cycles/burst or longer. 16920 Time ( ms )
• After each burst which is between 10 cycles and 35
cycles a gap time of at least 14 cycles is necessary. Figure 13. IR Signal from Fluorescent Lamp with low Modulation

• For each burst which is longer than 1.0 ms a corre-

sponding gap time is necessary at some time in the
data stream. This gap time should be at least 7 times
longer than the burst. IR Signal from fluorescent
lamp with high modulation
• Up to 400 short bursts per second can be received
continuously.
Some examples for suitable data format are: NEC
IR Signal

Code, Toshiba Micom Format, Sharp Code, RC5

Code, R-2000 Code.
When a disturbance signal is applied to the
TSOP44..QJ1 it can still receive the data signal. How-
ever the sensitivity is reduced to that level that no
unexpected pulses will occur.
0 5 10 15 20
Some examples for such disturbance signals which 16921 Time ( ms )
are suppressed by the TSOP44..QJ1 are:
• DC light (e.g. from tungsten bulb or sunlight) Figure 14. IR Signal from Fluorescent Lamp with high Modulation

• Continuous signal at 38 kHz or at any other fre-

quency
• Signals from fluorescent lamps with electronic bal-
last with high or low modulation
(see Figure 13 or Figure 14).

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Rev. 1.1, 14-Nov-03 5
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Package Dimensions in mm

16794

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Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423

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Rev. 1.1, 14-Nov-03 7
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