Data Sheet: TDA8547TS
Data Sheet: TDA8547TS
Data Sheet: TDA8547TS
DATA SHEET
TDA8547TS
2 0.7 W BTL audio amplifier with
output channel switching
Product specification 1998 Apr 01
Supersedes data of 1997 Oct 14
NXP Semiconductors Product specification
APPLICATIONS
Telecommunication equipment
Portable consumer products
Personal computers
Motor-driver (servo).
ORDERING INFORMATION
TYPE PACKAGE
NUMBER NAME DESCRIPTION VERSION
TDA8547TS SSOP20 plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1
1998 Apr 01 2
NXP Semiconductors Product specification
BLOCK DIAGRAM
20 11
17 18
IN1 OUT1
16
IN1+ +
R
VCC1
R
20 k 3
OUT1+
+
20 k
STANDBY/MUTE LOGIC
TDA8547TS
14 13
IN2 OUT2
15
IN2+ +
R
VCC2
R
20 k 8
OUT2+
5 +
SVRR
20 k
4
MODE
6 STANDBY/MUTE LOGIC
SELECT
5 2, 7, 9, 12, 19
n.c.
1 10 MGK984
GND1 GND2
1998 Apr 01 3
NXP Semiconductors Product specification
PINNING
FUNCTIONAL DESCRIPTION transistor. The total voltage loss is <1 V and with a 5 V
supply voltage and a 16 loudspeaker an output power of
The TDA8547TS is a 2 0.7 W BTL audio power amplifier
0.7 W can be delivered, when two channels are operating.
capable of delivering 2 0.7 W output power to a 16
If only one channel is operating then an output power of
load at THD = 10% using a 5 V power supply. Using the
1.2 W can be delivered (5 V, 8 ).
MODE pin the device can be switched to standby and
mute condition. The device is protected by an internal
MODE pin
thermal shutdown protection mechanism. The gain can be
set within a range from 6 to 30 dB by external feedback The whole device (both channels) is in the standby mode
resistors. (with a very low current consumption) if the voltage at the
MODE pin is >(VCC 0.5 V), or if this pin is floating. At a
Power amplifier MODE voltage level of less than 0.5 V the amplifier is fully
operational. In the range between 1.5 V and VCC 1.5 V
The power amplifier is a Bridge-Tied Load (BTL) amplifier
the amplifier is in mute condition. The mute condition is
with a complementary PNP-NPN output stage.
useful to suppress plop noise at the output caused by
The voltage loss on the positive supply line is the
charging of the input capacitor.
saturation voltage of a PNP power transistor, on the
negative side the saturation voltage of a NPN power
1998 Apr 01 4
NXP Semiconductors Product specification
Table 1 Control pins MODE and SELECT versus status of output channels
Voltage levels at control pins at VP = 5 V; for other supply voltages see Figs. 14 and 15.
STATUS OF OUTPUT
CONTROL PIN TYP. Iq
CHANNEL
(mA)
MODE SELECT CHANNEL 1 CHANNEL 2
HIGH(1)/NC(2) X(3) standby standby 0
HVP(4) HVP(4)/NC(2) mute mute 15
LOW(5) HVP(4)/NC(2) on on 15
HVP(4)/LOW(5) HIGH(1) mute/on standby 8
HVP(4)/LOW(5) HVP(4)/NC(2) mute/on mute/on 15
HVP(4)/LOW(5) LOW(5) standby mute/on 8
Notes
1. HIGH = Vpin > VCC 0.5 V.
2. NC = not connected or floating.
3. X = dont care.
4. HVP = 1.5 V < Vpin < VCC 1.5 V.
5. LOW = Vpin < 0.5 V.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCC supply voltage operating 0.3 +18 V
VI input voltage 0.3 VCC + 0.3 V
IORM repetitive peak output current 1 A
Tstg storage temperature 55 +150 C
Tamb operating ambient temperature 40 +85 C
VPsc AC and DC short-circuit safe voltage 10 V
Ptot power dissipation 1.1 W
1998 Apr 01 5
NXP Semiconductors Product specification
QUALITY SPECIFICATION
In accordance with SNW-FQ-611-E.
THERMAL CHARACTERISTICS
MGK987
2.0
handbook, halfpage
P
(W)
1.6
1.2
0.8
0.4
0
0 40 80 120 160
Tamb (C)
Note
1. At THD = 10%.
1998 Apr 01 6
NXP Semiconductors Product specification
DC CHARACTERISTICS
VCC = 5 V; Tamb = 25 C; RL = 8 ; VMODE = 0 V; gain = 20 dB; measured in BTL application circuit Fig.4; unless
otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCC supply voltage operating 2.2 5 18 V
Iq quiescent current BTL 2 channels; 15 22 mA
note 1
BTL 1 channel; 8 12 mA
note 1
Istb standby current VMODE = VCC 10 A
VO DC output voltage note 2 2.2 V
VOUT+ VOUT differential output voltage 50 mV
offset
IIN+, IIN input bias current 500 nA
VMODE input voltage MODE pin operating 0 0.5 V
mute 1.5 VCC 1.5 V
standby VCC 0.5 VCC V
IMODE input current MODE pin 0 V < VMODE < VCC 20 A
VSELECT input voltage SELECT pin channel 1 = standby; 0 1 V
channel 2 = on
channel 1 = on; VCC 1 VCC V
channel 2 = standby
ISELECT input current SELECT pin VSELECT = 0 V 100 A
Notes
1. Measured with RL = . With a load connected at the outputs the quiescent current will increase, the maximum of this
increase being equal to the DC output offset voltage divided by RL.
2. The DC output voltage with respect to ground is approximately 0.5VCC.
1998 Apr 01 7
NXP Semiconductors Product specification
AC CHARACTERISTICS
VCC = 5 V; Tamb = 25 C; RL = 8 ; f = 1 kHz; VMODE = 0 V; gain = 20 dB; measured in BTL application circuit Fig.4;
unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Po output power, one channel THD = 10% 1 1.2 W
THD = 0.5% 0.6 0.9 W
THD total harmonic distortion Po = 0.4 W 0.15 0.3 %
Gv closed loop voltage gain note 1 6 30 dB
Zi differential input impedance 100 k
Vno noise output voltage note 2 100 V
SVRR supply voltage ripple rejection note 3 50 dB
note 4 40 dB
Vo output voltage note 5 200 V
cs channel separation VSELECT = 0.5VCC; note 6 40 dB
Notes
R2
1. Gain of the amplifier is 2 -------- in BTL application circuit Fig.4.
R1
2. The noise output voltage is measured at the output in a frequency range from 20 Hz to 20 kHz (unweighted), with a
source impedance of RS = 0 at the input.
3. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 at the input.
The ripple voltage is a sine wave with a frequency of 1 kHz and an amplitude of 100 mV (RMS), which is applied to
the positive supply rail.
4. Supply voltage ripple rejection is measured at the output, with a source impedance of RS = 0 at the input.
The ripple voltage is a sine wave with a frequency between 100 Hz and 20 kHz and an amplitude of 100 mV (RMS),
which is applied to the positive supply rail.
5. Output voltage in mute position is measured with a 1 V (RMS) input voltage in a bandwidth of 20 Hz to 20 kHz,
so including noise.
6. Channel separation is measured at the output with a source impedance of RS = 0 at the input and a frequency of
1 kHz. The output power in the operating channel is set to 0.5 W.
1998 Apr 01 8
NXP Semiconductors Product specification
TEST AND APPLICATION INFORMATION The quiescent current has been measured without any
load impedance and both channels driven. When one
Test conditions
channel is active the quiescent current will be halved.
Because the application can be either Bridge-Tied Load The total harmonic distortion as a function of frequency
(BTL) or Single-Ended (SE), the curves of each was measured using a low-pass filter of 80 kHz.
application are shown separately. The value of capacitor C3 influences the behaviour of the
SVRR at low frequencies: increasing the value of C3
The thermal resistance = 110 K/W for the SSOP20; the
increases the performance of the SVRR.
maximum sine wave power dissipation for Tamb = 25 C
The figure of the MODE voltage (VMODE) as a function of
150 25 the supply voltage shows three areas; operating, mute
is: ---------------------- = 1.14 W
110 and standby. It shows, that the DC-switching levels of the
For Tamb = 60 C the maximum total power dissipation is: mute and standby respectively depend on the supply
voltage level. The figure of the SELECT voltage (VSELECT)
150 60 as a function of the supply voltage shows the voltage
---------------------- = 0.82 W
110
levels for switching the channels in the active, mute or
standby mode.
Thermal Design Considerations
The measured thermal resistance of the IC package is SE application
highly dependent on the configuration and size of the Tamb = 25 C if not specially mentioned, VCC = 7.5 V,
application board. Data may not be comparable between f = 1 kHz, RL = 4 , Gv = 20 dB, audio band-pass
different Semiconductor manufacturers because the 22 Hz to 22 kHz.
application boards and test methods are not (yet)
standardized. Also, the thermal performance of packages The SE application circuit is illustrated in Fig.16.
for a specific application may be different than presented Increasing the value of electrolytic capacitor C3 will result
here, because the configuration of the application boards in a better channel separation. Because the positive
(copper area!) may be different. NXP Semiconductors output is not designed for high output current (2 Io) at
uses FR-4 type application boards with 1 oz copper low load impedance (16 ), the SE application with
traces with solder coating. output capacitors connected to ground is advised.
The SSOP package has improved thermal conductivity The capacitor value of C6/C7 in combination with the load
which reduces the thermal resistance. Using a practical impedance determines the low frequency behaviour.
PCB layout (see Fig.24) with wider copper tracks to the The THD as a function of frequency was measured using
corner pins and just under the IC, the thermal resistance a low-pass filter of 80 kHz. The value of capacitor C3
from junction to ambient can be reduced to about 80 K/W. influences the behaviour of the SVRR at low frequencies:
For Tamb = 60 C the maximum total power dissipation at increasing the value of C3 increases the performance of
the SVRR.
150 60
this PCB layout is: ---------------------- = 1.12 W
80
General remark
Please note that this two channel IC is mentioned for
The frequency characteristic can be adapted by
application with only one channel active. For that reason
connecting a small capacitor across the feedback
the curves for worst case power dissipation are given for
resistor. To improve the immunity to HF radiation in radio
the condition of only one of the both channels driven with
circuit applications, a small capacitor can be connected in
a 1 kHz sine wave signal.
parallel with the feedback resistor (56 k); this creates a
low-pass filter.
BTL application
Tamb = 25 C if not specially mentioned, VCC = 5 V,
f = 1 kHz, RL = 8 , Gv = 20 dB, audio band-pass
22 Hz to 22 kHz.
The BTL application circuit is illustrated in Fig.4.
1998 Apr 01 9
NXP Semiconductors Product specification
BTL APPLICATION
MGD890 MGK988
30 10
handbook, halfpage handbook, halfpage
Iq
THD
(mA) (%)
(1)
20 1
10 101
0 102
0 4 8 12 16 20 102 101 1 10
VCC (V) Po (W)
f = 1 kHz; Gv = 20 dB.
RL = . (1) VCC = 5 V; RL = 8 .
1998 Apr 01 10
NXP Semiconductors Product specification
MGK989 MGK699
10 60
handbook, halfpage handbook, halfpage
cs
THD (dB)
(%) (1)
70
1 (2)
(1)
80
(3)
101
90
102 100
10 102 103 104 105 10 102 103 104 105
f (Hz) f (Hz)
VCC = 5 V; Vo = 2 V; RL = 8 .
(1) Gv = 30 dB.
(2) Gv = 20 dB.
Po = 0.5 W; Gv = 20 dB. (3) Gv = 6 dB.
(1) VCC = 5 V; RL = 8 .
Fig.8 Channel separation as a function of
Fig.7 THD as a function of frequency. frequency.
MGD894 MGK990
20 2
handbook, halfpage handbook, halfpage
Po
SVRR (W)
(dB)
1.5
40 (1) (2)
(1)
1
(2)
60
(3)
0.5
80 0
10 102 103 104 105 0 4 8 12
f (Hz) VCC (V)
1998 Apr 01 11
NXP Semiconductors Product specification
MGK991 MGK992
1.5 1.5
handbook, halfpage handbook, halfpage
P P
(W) (W)
1.0 1
(1) (2)
(1)
0.5 0.5
0 0
0 4 8 12 0 0.5 1 1.5
VCC (V) Po (W)
Fig.11 Worst case power dissipation as a function Fig.12 Power dissipation as a function of Po
of VCC (one channel active). (one channel active).
MGL211 MGL210
10 16
handbook,
V halfpage handbook, halfpage
o
(V) VMODE
1 (V)
12
101 standby
102
8
(1) (2) (3)
103
mute
104
4
105
operating
106 0
101 1 10 102 0 4 8 12 16
VMODE (V) VP (V)
Band-pass = 22 Hz to 22 kHz.
(1) VCC = 3 V.
(2) VCC = 5 V.
(3) VCC = 12 V.
1998 Apr 01 12
NXP Semiconductors Product specification
MGK700
20
handbook, full pagewidth
VSELECT
(V)
16
12 channel 2
standby
channel 1 + 2
on
8
VP
channel 1 channel 2
on on
channel 1
standby
0
0 2 4 6 8 10 12 14 16 18 20
VP (V)
SE APPLICATION
OUT2 OUT1+
3
C2 R4 100 k
1 F TDA8547TS
R3 IN2
14 C7
10 k OUT2
IN2+ 13
Vi2 15
470 F
SVRR RL2
5
MODE OUT2+
4 8
SELECT
6 1 10
Gain channel 1 = R2
--------
R1
GND MGK986
R4
Gain channel 2 = --------
R3
Fig.16 SE application.
1998 Apr 01 13
NXP Semiconductors Product specification
MGD899 MGD900
10 10
handbook, halfpage handbook, halfpage
THD THD
(%) (%)
1 1
(1)
(2)
101 (3) 101 (1)
(2)
(3)
102 102
102 101 1 10 10 102 103 104 105
Po (W) f (Hz)
MGK993 MGD902
40 20
handbook, halfpage handbook, halfpage
cs
(dB) SVRR
(dB)
60 40
(1)
(2) (1)
(2)
80 (3)
60
(4)
(3)
100 80
10 102 103 104 105 10 102 103 104 105
f (Hz) f (Hz)
Vo = 1 V; Gv = 20 dB.
(1) VCC = 7.5 V; RL = 4 .
(2) VCC = 9 V; RL = 8 . VCC = 7.5 V; RL = 4 ; RS = 0 ; Vr = 100 mV.
(3) VCC = 12 V; RL = 16 . (1) Gv = 24 dB.
(4) VCC = 5 V; RL = 32 . (2) Gv = 20 dB.
(3) Gv = 0 dB.
Fig.19 Channel separation as a function of
frequency. Fig.20 SVRR as a function of frequency.
1998 Apr 01 14
NXP Semiconductors Product specification
MGK994 MGK995
2 1.5
handbook, halfpage handbook, halfpage
Po
(W) P
1.6 (W)
1.0
1.2
(1) (2) (3)
0.4
0 0
0 4 8 12 16 0 4 8 12 16
VCC (V) VCC (V)
(1) RL = 4 .
THD = 10%.
(2) RL = 8 .
(1) RL = 4 .
(3) RL = 16 .
(2) RL = 8 .
(3) RL = 16 .
Fig.22 Worst case power dissipation as a function
Fig.21 Po as a function of VCC. of VCC (one channel active).
MGK996
1.2
handbook, halfpage
P
(W) (1)
0.8 (2)
(3)
0.4
0
0 0.4 0.8 1.2 1.6
Po (W)
1998 Apr 01 15
NXP Semiconductors Product specification
10 k
100 nF
56 k
IN1 10 k
1 F
20 1 MODE
11 k
11 k 47 F
11 TDA 10
SELECT
8542/47TS
IN2
56 k
CIC
1 F Nijmegen
OUT2 +OUT2
MGK997
1998 Apr 01 16
NXP Semiconductors Product specification
PACKAGE OUTLINE
SSOP20: plastic shrink small outline package; 20 leads; body width 4.4 mm SOT266-1
D E A
X
c
y HE v M A
20 11
Q
A2 A
(A 3)
pin 1 index A1
Lp
L
1 10
detail X
w M
e bp
0 2.5 5 mm
scale
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
99-12-27
SOT266-1 MO-152
03-02-19
1998 Apr 01 17
NXP Semiconductors Product specification
1998 Apr 01 18
NXP Semiconductors Product specification
DOCUMENT PRODUCT
DEFINITION
STATUS(1) STATUS(2)
Objective data sheet Development This document contains data from the objective specification for product
development.
Preliminary data sheet Qualification This document contains data from the preliminary specification.
Product data sheet Production This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
1998 Apr 01 19
NXP Semiconductors Product specification
Limiting values Stress above one or more limiting Quick reference data The Quick reference data is an
values (as defined in the Absolute Maximum Ratings extract of the product data given in the Limiting values and
System of IEC 60134) will cause permanent damage to Characteristics sections of this document, and as such is
the device. Limiting values are stress ratings only and not complete, exhaustive or legally binding.
(proper) operation of the device at these or any other
Non-automotive qualified products Unless this data
conditions above those given in the Recommended
sheet expressly states that this specific NXP
operating conditions section (if present) or the
Semiconductors product is automotive qualified, the
Characteristics sections of this document is not warranted.
product is not suitable for automotive use. It is neither
Constant or repeated exposure to limiting values will
qualified nor tested in accordance with automotive testing
permanently and irreversibly affect the quality and
or application requirements. NXP Semiconductors accepts
reliability of the device.
no liability for inclusion and/or use of non-automotive
Terms and conditions of commercial sale NXP qualified products in automotive equipment or
Semiconductors products are sold subject to the general applications.
terms and conditions of commercial sale, as published at
In the event that customer uses the product for design-in
http://www.nxp.com/profile/terms, unless otherwise
and use in automotive applications to automotive
agreed in a valid written individual agreement. In case an
specifications and standards, customer (a) shall use the
individual agreement is concluded only the terms and
product without NXP Semiconductors warranty of the
conditions of the respective agreement shall apply. NXP
product for such automotive applications, use and
Semiconductors hereby expressly objects to applying the
specifications, and (b) whenever customer uses the
customers general terms and conditions with regard to the
product for automotive applications beyond NXP
purchase of NXP Semiconductors products by customer.
Semiconductors specifications such use shall be solely at
No offer to sell or license Nothing in this document customers own risk, and (c) customer fully indemnifies
may be interpreted or construed as an offer to sell products NXP Semiconductors for any liability, damages or failed
that is open for acceptance or the grant, conveyance or product claims resulting from customer design and use of
implication of any license under any copyrights, patents or the product for automotive applications beyond NXP
other industrial or intellectual property rights. Semiconductors standard warranty and NXP
Semiconductors product specifications.
Export control This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
1998 Apr 01 20
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
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Printed in The Netherlands 545102/00/02/pp21 Date of release: 1998 Apr 01 Document order number: 9397 750 03347