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    Exercises Problems Answers Chapter 5

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    A Sibiescu
    This document contains several exercises and example problems about semiconductor devices and materials. It provides: 1) Calculations to determine the required doping concentration to achieve a specified drift current density in silicon. 2) Calculations of drift current density in silicon given doping concentrations and an applied electric field. 3) Determination of required doping concentration and resulting electron mobility in silicon to achieve a specified resistivity. 4) Additional examples calculating electric fields, potentials, current densities, and other parameters in semiconductor materials and devices.

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    © All Rights Reserved
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    Exercises Problems Answers Chapter 5

    Uploaded by

    A Sibiescu
    2K views5 pages
    This document contains several exercises and example problems about semiconductor devices and materials. It provides: 1) Calculations to determine the required doping concentration to achieve a specified drift current density in silicon. 2) Calculations of drift current density in silicon given doping concentrations and an applied electric field. 3) Determination of required doping concentration and resulting electron mobility in silicon to achieve a specified resistivity. 4) Additional examples calculating electric fields, potentials, current densities, and other parameters in semiconductor materials and devices.

    Original Title

    Exercises Ch5 Neaman Semiconductors

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    This document contains several exercises and example problems about semiconductor devices and materials. It provides: 1) Calculations to determine the required doping concentration to achieve a specified drift current density in silicon. 2) Calculations of drift current density in silicon given doping concentrations and an applied electric field. 3) Determination of required doping concentration and resulting electron mobility in silicon to achieve a specified resistivity. 4) Additional examples calculating electric fields, potentials, current densities, and other parameters in semiconductor materials and devices.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    2K views5 pages

    Exercises Problems Answers Chapter 5

    Uploaded by

    A Sibiescu
    This document contains several exercises and example problems about semiconductor devices and materials. It provides: 1) Calculations to determine the required doping concentration to achieve a specified drift current density in silicon. 2) Calculations of drift current density in silicon given doping concentrations and an applied electric field. 3) Determination of required doping concentration and resulting electron mobility in silicon to achieve a specified resistivity. 4) Additional examples calculating electric fields, potentials, current densities, and other parameters in semiconductor materials and devices.

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    Exercises Problems Answers Chapter 5

    Ex. 5.1 A drift current density of Jdrf = 75 A/cm2 is required in a device using p-type silicon when an electric field of
    E = 120 V/cm is applied. Determine the required impurity doping concentration to achieve this specification.
    Assume that electron and hole mobilities given in Table 5.1 apply.

    TYU 5.1 Consider a sample of silicon at T = 300 K doped at an impurity concentration of Nd = 1015 cm-3 and Na =
    1014 cm-3. Assume electron and hole mobilities given in Table 5.1. Calculate the drift current density if the applied
    electric field is E = 35 V/cm.

    TYU 5.3 For a particular silicon semiconductor device at T = 300 K, the required material is n type with a resistivity
    of 0.10 Ω-cm. (a) Determine the required impurity doping concentration and (b) the resulting electron mobility.

    Problem 5.41 Using the data in Example 5.6, calculate the potential difference between x= 0 and x= 1μm.

    Problem 5.43 1 In GaAs, the donor impurity concentration varies as Nd0 exp (-x/L) for 0 ≤ x ≤ L, where L = 0. 1μm
    and Nd0 = 5 x 1016 cm-3. Assume μn = 6000 cm2/V-s and T = 300 K. (a) Derive the expression for the electron
    diffusion current density versus distance over the given range of x. (b) Determine the induced electric field that
    generates a drift current density that compensates the diffusion current density.

    Problem 5.49 (Hall effect) Consider silicon at T = 300 K. A Hall effect device is fabricated with the following
    geometry: d = 5 10-3cm, W = 5 X 10-2cm, and L = 0.50 cm. The electrical parameters measured are: Ix = 0.50
    mA, Vx = 1.25 V, and Bz = 650 gauss = 6.5 X 10-2 tesla. The Hall field is EH = -16.5 mV/cm. Determine (a)
    the Hall voltage, (b) the conductivity type, (c) the majority carrier concentration, and (d) the majority carrier
    mobility.

    1
    This problem is more difficult than average
    Exercise Solutions
    Ex 5.1

    J drf ≅ eµ p p o Ε = eµ p N a Ε

    ( )
    75 = 1.6 × 10 −19 (480 )N a (120 )

    which yields N a = 8.14 × 1015 cm −3

    _______________________________________

    TYU 5.1

    n o = N d − N a = 1015 − 1014 = 9 × 1014 cm

    Also

    po =
    n i2
    =
    (
    1.5 × 1010 )
    2

    = 2.5 × 10 5 cm −3
    no 9 × 1014

    Now

    ( )
    J drf = e µ n n o + µ p p o Ε ≅ eµ n n o Ε

    ( ) (
    = 1.6 × 10 −19 (1350 ) 9 × 1014 (35) )
    or

    J drf = 6.80 A/cm 2

    _______________________________________

    TYU 5.3

    1
    σ = eµ n N d =
    ρ

    So

    (1.6 ×10 )µ −19


    n Nd =
    1
    0.1
    = 10

    µ n N d = 6.25 × 1019
    Using Figure 5.3 and trial and error,

    N d ≅ 6 × 1016 cm −3 and

    µ n ≅ 1050 cm 2 /V-s

    _______________________________________

    5.41

    From Example 5.6

    Εx =
    (0.0259)(1019 ) = (0.0259)(10 3 )
    (10 16
    − 1019 x ) (1 − 10 x )3

    10 −4

    V =− ∫ Ε dx
    0
    x

    10 −4

    = −(0.0259 ) 10 ( ) ∫ dx
    3

    (1 − 10 x )
    0
    3

    ( ) [ ]
    10 −4
     −1 
    = −(0.0259 ) 10 3  3  ln 1 − 10 3 x
     10  0

    = (0.0259 )[ln (1 − 0.1) − ln (1)]

    or

    V = −2.73 mV

    _______________________________________

    5.43

    (a) We have
    dn dN d (x )
    J diff = eD n = eD n
    dx dx

    eD n −x
    = ⋅ N do exp 
    (− L )  L 

    We have
     kT 
    Dn = µ n   = (6000 )(0.0259 )
     e 

    or

    D n = 155.4 cm 2 /s

    Then

    J diff =
    ( ) (
    − 1.6 × 10 −19 (155.4 ) 5 × 1016 )
    −x
    exp 
    (
    0.1× 10 −4
    )  L 

    or

    −x
    J diff = −1.243 × 10 5 exp  A/cm
    2

     L 

    (b)

    0 = J drf + J diff

    Now

    J drf = eµ n nΕ

    ( ) (   − x 
    = 1.6 × 10 −19 (6000 ) 5 × 1016 exp )
     Ε
      L 

    or

      − x 
    J drf = (48)exp  Ε
      L 

    We have

    J drf = − J diff

    so

     
    (48)exp − x Ε = 1.243 ×10 5 exp − x 
      L   L 

    which yields

    Ε = 2.59 × 10 3 V/cm

    _______________________________________
    5.49

    (a) V H = Ε H W = −(16.5 × 10 −3 )(5 × 10 −2 )


    or

    V H = −0.825 mV

    (b) V H = negative ⇒ n-type


    −I x Bz
    (c) n =
    edV H

    =
    ( )(
    − 0.5 × 10 −3 6.5 × 10 −2 )
    ( )( )(
    1.6 × 10 −19 5 × 10 −5 − 0.825 × 10 −3 )
    or

    n = 4.924 × 10 21 m −3 = 4.924 × 1015 cm −3

    (d)

    IxL
    µn =
    enV xWd

    =
    (0.5 ×10 )(0.5 ×10 )
    −3 −2
    or
    (1.6 ×10 −19
    )(4.924 ×10 )(1.25)(5 ×10 )(5 ×10 )
    21 −4 −5

    µ n = 0.1015 m 2 /V-s = 1015 cm 2 /V-s

    _______________________________________

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