Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                
Scribd Logo
Upload

Welcome to Scribd!

  • 81 views

    N-And P-Channel 30-V (D-S) MOSFET: General Description Features

    Uploaded by

    Ricardo Villarroel
    The document describes an N-channel and P-channel 30-V MOSFET chip called the B3942. It has low on-resistance of 24mΩ for the N-channel and 25mΩ for the P-channel. It is suitable for applications requiring high-side switching such as power management circuits in notebooks, phones, and other battery-powered devices due to its low power loss and small package size. Its features include high density cell design, exceptional on-resistance, and maximum current handling in an SOP-8 package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    N-And P-Channel 30-V (D-S) MOSFET: General Description Features

    Uploaded by

    Ricardo Villarroel
    81 views1 page
    The document describes an N-channel and P-channel 30-V MOSFET chip called the B3942. It has low on-resistance of 24mΩ for the N-channel and 25mΩ for the P-channel. It is suitable for applications requiring high-side switching such as power management circuits in notebooks, phones, and other battery-powered devices due to its low power loss and small package size. Its features include high density cell design, exceptional on-resistance, and maximum current handling in an SOP-8 package.

    Original Title

    b3942

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    The document describes an N-channel and P-channel 30-V MOSFET chip called the B3942. It has low on-resistance of 24mΩ for the N-channel and 25mΩ for the P-channel. It is suitable for applications requiring high-side switching such as power management circuits in notebooks, phones, and other battery-powered devices due to its low power loss and small package size. Its features include high density cell design, exceptional on-resistance, and maximum current handling in an SOP-8 package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    81 views1 page

    N-And P-Channel 30-V (D-S) MOSFET: General Description Features

    Uploaded by

    Ricardo Villarroel
    The document describes an N-channel and P-channel 30-V MOSFET chip called the B3942. It has low on-resistance of 24mΩ for the N-channel and 25mΩ for the P-channel. It is suitable for applications requiring high-side switching such as power management circuits in notebooks, phones, and other battery-powered devices due to its low power loss and small package size. Its features include high density cell design, exceptional on-resistance, and maximum current handling in an SOP-8 package.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    B3942

    N- and P-Channel 30-V (D-S) MOSFET

    General Description Features


    B3942 is the N- and P-Channel logic enhancement RDS(ON)=24mΩ@VGS=10V (N-Ch)
    mode power field effect transistor using high cell RDS(ON)=38mΩ@VGS=4.5V (N-Ch)
    density, DMOS trench technology in production. RDS(ON)=25mΩ@VGS=-10V (P-Ch)
    This high density process is especially tailored to
    RDS(ON)=26mΩ@VGS =-4.5V (P-Ch)
    minimize on-state resistance. The device is
    Super High Density Cell Design for
    particularly suitable for low voltage application such
    Extremely Low RDS(ON)
    as cellular phone and notebook computer power
    Exceptional On-Resistance and
    management and other battery powered circuits
    Maximum DC Current
    where high-side switching and low in-line power
    SOP-8 Package
    loss are needed in a very small outline surface
    mount package.

    Applications
    Pin Configuration Power Management in Note book
    D1
    D Portable Equipment
    D1
    D
    D
    D2 Battery Powered System
    D
    D2
    DC/DC Converter
    Load Switch
    DSC
    S
    S1
    S
    G1
    S
    S2
    G
    G2

    Absolute Maximum Ratings (TA=25 ℃ Unless Otherwise Noted):


    Parameter Symbol N-Channel P-Channel Unit
    Drain-Source Voltage VDSS 30 -30 V
    Gate-Source Voltage VGSS ±20 ±20 V
    Continuous Drain TA=25 ℃ 6.9 -6.1
    Current(tJ=150 ) ℃ TA=70 ℃ ID
    5.5 -4.9
    A

    Pulsed Drain Current IDM 30 -30 A


    Continuous Source Current (Diode Conduction) IS 1.7 -1.7 A
    TA=25℃ 2.0
    TA=70℃
    Maximum Power Dissipation PD W
    1.44
    Operating Junction Temperature TJ -55 to 150 ℃
    Thermal Resistance-Junction to Case RθJC 62.5 ℃/W

    Confidential material for authorized user only and BiTEK www.BiTEK.com.tw


    reserves the utmost right upon the information contained herein.

    You might also like