Infineon AN2008 02
Infineon AN2008 02
Infineon AN2008 02
2009
AN2008-02
2ED100E12-F2_EVAL
6ED100E12-F2_EVAL
Evaluation Driver Board for EconoDUAL™3
and EconoPACK™+ modules
Industrial Power
Edition 2009-10-07
Published by
Infineon Technologies AG
59568 Warstein, Germany
© Infineon Technologies AG 2009.
All Rights Reserved.
LEGAL DISCLAIMER
THE INFORMATION GIVEN IN THIS APPLICATION NOTE IS GIVEN AS A HINT FOR THE
IMPLEMENTATION OF THE INFINEON TECHNOLOGIES COMPONENT ONLY AND SHALL NOT BE
REGARDED AS ANY DESCRIPTION OR WARRANTY OF A CERTAIN FUNCTIONALITY, CONDITION OR
QUALITY OF THE INFINEON TECHNOLOGIES COMPONENT. THE RECIPIENT OF THIS APPLICATION
NOTE MUST VERIFY ANY FUNCTION DESCRIBED HEREIN IN THE REAL APPLICATION. INFINEON
TECHNOLOGIES HEREBY DISCLAIMS ANY AND ALL WARRANTIES AND LIABILITIES OF ANY KIND
(INCLUDING WITHOUT LIMITATION WARRANTIES OF NON-INFRINGEMENT OF INTELLECTUAL
PROPERTY RIGHTS OF ANY THIRD PARTY) WITH RESPECT TO ANY AND ALL INFORMATION GIVEN
IN THIS APPLICATION NOTE.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
AN2008-02
Driver board for EconoDUAL™3 and EconoPACK™+
AN2008-02
Revision History: 2009-08 V1.2
Previous Version: V1.1
general Improved driver stage for higher gate current to adapt for IGBT4 (2ED100E12-F2)
general Improved protection against disturbances on DESAT-signal (2ED100E12-F2)
general Providing data for increased portofolio of modules to be used with 2ED100E12-F2
general Update of measurement results (modules using IGBT4)
Page 7 Update with recent data from 1ED020I12-F datasheet
Page 16 More detailed text on baseplate temperature measurement
Page 17 Discussing parameters having impact on switching losses
Page 40 References
Authors: Alain Siani IFAG IMM INP TM, Uwe Jansen IFAG IMM INP TM
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
IGBT.Application@infineon.com
Introduction
1 Introduction ...................................................................................................................................5
2 Design features .............................................................................................................................6
2.1 Main features ..................................................................................................................................6
2.2 Key data ..........................................................................................................................................7
2.3 Pin assignment................................................................................................................................8
2.4 Mechanical dimensions of the EconoDUAL™3 Driver Board.........................................................9
2.5 Mechanical dimensions of the EconoPACK™+ Driver Board ........................................................9
3 Application Note..........................................................................................................................10
3.1 Power Supply ................................................................................................................................10
3.2 Input logic – PWM signals.............................................................................................................10
3.3 Maximum switching frequency ......................................................................................................11
3.4 Booster ..........................................................................................................................................12
3.5 Short circuit protection and clamp function ...................................................................................12
3.6 Fault output ...................................................................................................................................14
3.7 Temperature measurement...........................................................................................................15
4 Switching losses .........................................................................................................................17
4.1 Turn-on losses ..............................................................................................................................17
4.2 Turn-off losses ..............................................................................................................................18
5 Definition of layers for Evaluation Driver Boards....................................................................19
6 Schematic, Layout and Bill of Material EconoDUAL™3 board ..............................................20
6.1 Schematic......................................................................................................................................20
6.2 Assembly drawing .........................................................................................................................23
6.3 Layout............................................................................................................................................24
6.4 Bill of Material................................................................................................................................25
6.5 Gate resistor list ............................................................................................................................26
7 Schematic, Layout and Bill of Material EconoPACK™+ board ..............................................27
7.1 Schematic......................................................................................................................................27
7.2 Assembly drawing .........................................................................................................................34
7.3 Layout............................................................................................................................................35
7.4 Bill of material................................................................................................................................37
7.5 Gate resistor list ............................................................................................................................39
8 How to order Evaluation Driver Boards....................................................................................39
9 References ...................................................................................................................................40
F – Functional isolation
12 – Suitable up to 1200 V IGBTs
Evaluationboard
100 – 10 A output driver
2ED – 2 channel driver
Introduction
1 Introduction
The Evaluation Driver Board 2ED100E12-F2 for EconoDUAL™3 modules as can be seen in Figure 1 and
the Evaluation Driver Board 6ED100E12-F2 for EconoPACK™+ modules, shown in Figure 2, were
developed to support customers during their first steps designing applications with these modules. The basic
version of each board is available from Infineon in small quantities. The properties of these parts are
described in the chapter 2.2 of this document whereas the remaining paragraphs provide information
intended to enable the customer to copy, modify and qualify the design for production, according to his
specific requirements.
The design of the 2ED100E12-F2 and the 6ED100E12-F2 was performed with respect to the environmental
conditions described as design target in this document. The requirements for leadfree reflow soldering have
been considered when components were selected. The design was tested as described in this
documentation but not qualified regarding manufacturing and operation in the whole operating ambient
temperature range or lifetime.
The boards provided by Infineon are subjected to functional testing only.
Due to their purpose Evaluation Boards are not subjected to the same procedures regarding Returned
Material Analysis (RMA), Process Change Notification (PCN) and Product Discontinuation (PD) as regular
products.
See Legal Disclaimer and Warnings for further restrictions on Infineons warranty and liability.
Figure 1 The 2ED100E12-F2 Evaluation Driver Board mounted on the top of the EconoDUAL™3
module
Design features
The following picture shows the driver board mounted on an EconoPACK™+ module.
SAP number for EconoPACK™+ Evaluation Driver Board: 31166
Figure 2 The 6ED100E12-F2 Evaluation Driver Board mounted on the top of the EconoPACK™+
module
2 Design features
The following sections provide an overview of the boards including main features, key data, pin assignments
and mechanical dimensions.
Design features
2.2 Key data
All values given in the table bellow are typical values, measured at TA = 25 °C
1)
The maximum switching frequency for every EconoDUAL™3 or EconoPACK™+ module type should be calculated separately.
Limitation factors are: max. DC/DC output power of 1.5 W per channel and max. PCB board temperature measured around gate
resistors of 105 °C for used FR4 material. For detailed information see chapter 2.3
2)
Minimum value tMININ given in 1ED020I12-F IGBT driver datasheet
3)
Maximum ambient temperature strictly depends on load and cooling conditions. For detailed description see chapter 2.3
4)
Values defined in datasheets: T60403-D4615-X054 (date: 21.03.2000),
5)
1ED020I12-F (Datasheet, Version 2.1, October 2008)
6)
AD7400 (9/07 – Revision B)
Design features
Figure 3 The 6ED100E12-F2 Evaluation Driver Board pin assignment for the third leg
Connectors X1 and X2 of the EconoPACK™+ board have the same pinning as connector X3 except
temperature measurement. Connector X3 of EconoPACK™+ driver board has the same pin assignment as
connector X1 of the EconoDUAL™3 driver board.
Design features
2.4 Mechanical dimensions of the EconoDUAL™3 Driver Board
SAP number to order Evaluation Driver Board for EconoDUAL™3 modules: 31165
max. 19 mm max. 17 mm
2 1
62 mm
5 6 7 8 9
99 mm
15 20 25
16 21 26
17 22 27
99 mm
13 18 23 28
14 19 24 29
X X X
161 mm
Application Note
Both Driver Boards should be fastened by self taping screws and soldered to the auxiliary connectors on top
of the IGBT module.
Clearance and creepage distances for EconoDUAL™3 and EconoPACK™+ Driver Boards:
Primary/Secondary is not less than 8 mm and Secondary/Secondary is not less than 4 mm.
3 Application Note
The following chapter describes the board´s operation in evaluation setup. Please note that the following
paragraphs describe the circuits of the 2ED100E12-F2 which has been modified (compared to the last
revision of this AN) to drive IGBT4 modules and to reduce the susceptibility to erroneous triggering of the
Vcesat-detection. Same changes may also be applied to the 6ED100E12-12-F2, but layout and part list of this
board provided in chapter 7 still represent the initial design.
The schematic in Figure 6 shows driver circuit with positive logic. IN+ is used as signal input whereas IN- is
used as enable signal. Therefore a +5 V signal on the IN+ input pin and a GND signal on the IN- input pin is
necessary to switch on the IGBT. To operate the whole circuit with negative logic the capacitors on the input
pins have to be exchanged. Otherwise this would cause an additional delay. IN+ will then operate as an
enable signal.
Application Note
In this formula f s resembles the switching frequency, ∆Vout represents the voltage step at the driver output
Pdis is the dissipated power, Qge is the IGBT gate charge value corresponding to -8/+16V operation. This
value can be approximately calculated from the datasheet value by multiplying by 0.8.
Most of the losses are shared between the internal – PRg int and the external – PRgext gate resistors.
Negligible losses are also in the driver IC itself. Due to the PCB temperature criteria the power dissipated in
external gate resistors PR gext is to be considerd for the thermal design. Temperatures can be calculated
takeing relevant thermal resistances of this part of the board into account.
Based on experimentally determined board temperatures the following thermal resistances have been
calculated using an equivalent circuit diagram as given in Figure 7:
Gate resistors to baseplate: RthB-G = 45 K/W
Gate resistors to ambient: RthR-A = 39 K/W
TBASE
IGBT
RthB-G
RthB-G
TG PRgext PRgext
PCB
Application Note
Using these values and the equivalent circuit, it is possible to determine the maximum board temperature, if
the power losses of the external gate resistors, the maximum ambient temperature and the maximum
baseplate temperature are known:
RthB − G * (TBASE − TA ) R *R
TG = TA + + PRgext * thR − A thB − G
RthR − A + RthB − G RthR − A + RthB − G
The maximum switching frequency will be determined when either the maximum allowable board
temperature has been reached (105°C) or when the limit of power transmission of the DC/DC converter (1.5
W per channel) is exceeded.
3.4 Booster
Two complementary pairs of transistors are used to amplify the driver ICs signal. This allows driving IGBTs
that need more current than the driver IC can deliver. Two NPN transistors are used for switching the IGBT
on and two PNP transistors for switching the IGBT off. Resistors in the individual base connections ensure
proper parallel operation.
The transistors are dimensioned to have enough peak current to drive all 600 V and 1200 V EconoDUAL™3
and EconoPACK™+ modules. Peak current can be calculated like in formula (2):
∆Vout
I peak = (2)
RGint + RGext + RDriver
Figure 8 Booster
Gate resistors are connected in between booster stage and IGBT module gate connection. Suggested
values are provided in tables 5 and 7. For some modules the value for these resistors is 0 Ohm. In this case
just a jumper is required. If resistors are needed ensure that these resistors have a suitable rating for
repetitive pulse power to avoid degradation.
Application Note
the collector current slope, is limited. Depending on the stray inductance, the current and the DC voltage the
overvoltage shoot during turn off changes.
Figure 9 shows the parts of the circuit needed for the desaturation function and the active clamping function.
In case of a short circuit the saturation voltage U GE will rise and the driver detects that there is a short circuit.
The IGBT has to be switched off. There will be an overvoltage shoot due to the stray inductance of the
module and the DC-Link. This overvoltage shoot has to be lower than the maximum IGBT blocking voltage.
Therefore the evaluation driver board contains an active clamping function whereby the clamping will raise
the voltage for the booster and also raise the voltage directly on the gate.
The typical turn-off waveform under short circuit condition and room temperature of a FF450R12ME4 module
without any additional function is shown in Figure 10a.Typical waveform under short circuit condition with
active clamp function is shown in 10b at room temperature.
UGE UGE
IC IC
UCE UCE
a) b)
Figure 10 a) Short circuit without active clamp b) with active clamp function
Application Note
Ready signal
Fault signal
UGE
a) b)
Figure 12 /Fault output during: a) normal operation b) operation under short circuit
The fault signal will be in low state in case of a short circuit until /RST is pulled down.
Application Note
The bill of material not only includes a part list, but also assembly notes. All electronic parts used in the
design are lead-free with 260 °C soldering profile.
The tolerances for resistors should be less or equal ±1 %, for capacitors of the type C0G less or equal ±5 %
and for capacitors of the type X7R less or equal ±10 %
Switching losses
Using the baseplate temperature and a thermal model the junction temperature can be estimated. The
complexity of the thermal model needed for this purpose depends on application and heatsinking conditions
as well as on requirements on accuracy and dynamic response. In case of a broken wire the output switches
down to 0 V. Output voltage vs. baseplate temperature is shown in Figure 14, assuming that the circuit
according to Figure 12 is used to convert the digital signal to an analog signal.
4
V TEMP [V]
0
-50 -30 -10 10 30 50 70 90 110 130 150
TJ [°C]
Note: This temperature measurement is not suitable for short circuit detection or short term overload and
may be used to protect the module from long term overload conditions or malfunction of the cooling system.
Switching losses
4 Switching losses
The setup used for preparing this application note varies from the setup used to characterize the devices in
three aspects:
DC-link inductance:
The DC-link inductance of the setup used for these test is has a value of approximately 35 nH for all modules
investigated here in contrast to varying values between 35 nH to 80 nH used for device characterization (see
device datasheets for details). For a detailed discussion on the impact of DC-link inductance on switching
losses please refer to [2].
Gate voltage:
This Evaluation Board provides a gate voltage of -8 V for turning off and 16 V for turning on wheras
charactization is done with a driver providing +/- 15 V of gate voltage.
Gate driver output impedance:
According to IEC 60747-9 for characterization of an IGBT the driver used should resemble an ideal voltage
source as far as possible. For the Evaluation Board a driver output stage has been choosen that considers
board space as well as cost constraints. Therefore it can not provide close to zero output impedance.
All aspects discussed above have an impact on the switching speed of the module and hence also on the
switching losses. Gate resistor values have been choosen so that di/dt at turn-on compareable to
characterization has been achieved. Nevertheless small deviations in the turn-on losses persist. For the turn-
off losses there is little impact of driving conditions for trench-fieldstop IGBTs like the ME3 and ME4 devices.
For NPT IGBTs, like used in the MS4 modules, the considerations made for turn-on losses also apply for
turn-off losses.
160
140
Eon @ Tj = 25°C
400V
120 Eon @ Tj = 125°C
500V
600V
100
Losses Eon [mJ]
700V
800V
80
400V
500V
60
600V
700V
40
800V
20
0
0 100 200 300 400 500 600 700 800 900 1000
Current [A]
a)
Switching losses
100 500V
600V
80
700V
800V
60
400V
500V
40
600V
20 700V
800V
0
0 100 200 300 400 500 600 700 800 900 1000
Current [A]
b)
Figure 15 Turn-on losses with a) FF450R12ME3 and b) FF450R12ME4 module
160
100
700V
800V
80
400V
500V
60
600V
700V
40
800V
20
0
0 100 200 300 400 500 600 700 800 900 1000
Current [A]
a)
140
Eoff @ Tj = 25°C 400V
500V
Eoff @ Tj = 125°C
120 600V
Eoff @ Tj = 150°C 700V
100 800V
400V
Losses Eoff [mJ]
80 500V
600V
700V
60
800V
400V
40
500V
600V
20 800V
700V
0
0 100 200 300 400 500 600 700 800 900 1000
Current [A]
b)
Figure 16 Turn-off losses with a) FF450R12ME3 and b) FF450R12ME4 module
All losses are measured according the IEC 60747-9 standard. Eon is the integration of U CE ⋅ I C from 10% of
I C and 2% U CE . For Eoff it is vice versa. Here it is the integration from 10% of U CE to 2% of I C .
Layers:
Copper Isolation
1: 35 µm / 1 oz. 1-2: 0.5 mm
2: 35 µm / 1 oz.
2-3: 0.5 mm
3: 35 µm / 1 oz.
4: 35 µm / 1 oz. 3-4: 0.5 mm
6.1 Schematic
For detail information use the zoom function of your PDF viewer to zoom into the drawing.
6.3 Layout
a) b)
Figure 25 EconoDUAL™3 IGBT driver – a) Top layer and b) Layer 2
a) b)
Figure 26 EconoDUAL™3 IGBT driver – a) Layer 3 and b) Bottom layer
Type Qty Value / Device Package size Part Name Recommended Assembled
imperal Manufacturer
Resistor 2 0R R0402 R_FR1, R_FR2
Resistor 5 4k7 R0402 R3, R4, R9, R10, R_R
Resistor 4 10k R0402 R6, R12,R22,R23
Resistor 4 100R R0402 R1, R2, R7, R8
Resistor 3 0R R0603 R1C, R2C, R8T no
Resistor 2 0R R0603 R1C1, R2C1 no
Resistor 4 27R R0603 BB, BT,BB1,BT3
Resistor 2 1k R0603 R2B, R2T
Resistor 1 1k2 R0603 R9T
Resistor 3 2k2 R0603 R11T, R13T, R17
Resistor 2 4R7 R0603 R20, R21
Resistor 4 10R R0603 R1L, R2L,BT2,R2L1 no
Resistor 2 15R R0603 R15, R16
Resistor 1 39k R0603 R25
Resistor 1 68k R0603 R14
Resistor 1 270R R0603 R12T
Resistor 1 820R R0603 R10T
Resistor 1 0R15 R0805 R18
Resistor 2 12R R0805 R1B, R1T,R1B2, R1T2
Resistor 2 39R R0805 R5, R11
Resistor 2 220R R0805 R1B1, R1T1 no
Resistor 2 10R R1206 R13, R19
Resistor 8 variable R2010 R4B, R4T, R5B, R5T, TT electronics no: See
R6B, R6T, R7B, R7T Table 6
Transistor 2 BC856 SOT23 T1, T2
TrenchMOS 2 PMV45EN SOT23 T3, T4 Philips
Transistor 4 ZXTN2010Z SOT89 T1B, T1T,T1B1,T1T1 Zetex
Transistor 4 ZXTP2012Z SOT89 T2B, T2T,T2B1,T2T1 Zetex
Connector 1 8-188275-6 16POL X1 Tyco
Table 5 External gate resistors RGext are listed below, all packages are 2010
Module RGon [Ω] RGoff [Ω] R4T, R4B, R6T, R5T, R5B, R7T,
R6B [Ω] R7B [Ω] Assembled
FF600R06ME3 2.0 1,25 2,5 1,5 no
FF150R12ME3G 5.6 3,7 7,5 3,7 no
FF225R12ME3 1.5 0 0 3 no
FF225R12ME4 0 0 0 0 no
FF300R12ME3 1.1 0 0 2,2 no
FF300R12ME4 0 0 0 0 no
FF450R12ME3 1 0,25 0,5 1,5 no
FF450R12ME4 1 0 0 2 no
FF150R12MS4 5.1 3,2 6,2 4 no
FF225R12MS4 3 1,5 3 3 no
FF300R12MS4 1.5 0,5 1 2 no
7.1 Schematic
Figure 40 Connectors
For detail information use the zoom function of your PDF viewer to zoom into the drawing.
7.3 Layout
Type Qty Value / Device Package size Part Name Recommended Assembled
imperal Manufacturer
Diode 6 BAT64-02W SCD80 DB1, DB2, DB3, DT1, Infineon no
DT2, DT3
Unipolar 6 P6SMB/440V SMB D1.1C, D2.1C, D3.1C,
TVS Diode D4.1C, D5.1C, D6.1C,
Unipolar 6 P6SMB/510V SMB D1.2C, D2.2C, D3.2C,
TVS Diode D4.2C, D5.2C, D6.2C
Diode 6 STTA112U SOD6 D5B, D5T, D12B, D12T,
D19B, D19T
Zener Diode 12 MM3Z5V6T1G SOD323-R D1.1B, D1.1T, D1.2B, On no
D1.2T, D8.1B, D8.1T, Semiconductor
D8.2B, D8.2T, D15.1B,
D15.1T, D15.2B,
D15.2T
Zener Diode 6 BZX84-C11 SOT23 ZB1, ZB2, ZB3, ZT1, no
ZT2, ZT3
Diode 6 ZLLS1000 SOT23 D7B, D7T, D14B, D14T, Zetex
D21B, D21T
Driver IC 6 1ED020I12-F P-DSO-16 IC1, IC2, IC5, IC6, IC8,
IC9
Half-Bridge 3 IR2085SPBF SO08 IC3, IC7, IC10 International
Driver Rectifier
Schmitt- 1 SN74LVC1G17DBVR SOT23-5 IC11
Trigger
Isolated 1 AD7400YRWZ P-DSO-16 IC12 Analog
Sigma-Delta Devices
Modulator
Voltage 1 ZMR500FTA SOT23 IC13
regulator
Type Qty Value / Device Package size Part Name Recommended Assembled
imperal Manufacturer
Resistor 6 12R R0805 R1B, R1T, R9B, R9T,
R17B, R17T
Resistor 6 39R R0805 R5, R11, R24, R30,
R43, R49
Resistor 6 220R R0805 R1B1, R1B2, R1B3, no
R1T1, R1T2, R1T3
Resistor 6 10R R1206 R32, R33, R58, R59,
R62, R63
Resistor 24 variable R2010 R4B, R4T, R5B, R5T, TT electronics no: See
R6B, R6T, R7B, R7T, Table 8
R12B, R12T, R13B,
R13T, R14B, R14T,
R15B, R15T, R20B,
R20T, R21B, R21T,
R22B, R22T, R23B,
R23T
Transistor 6 BC856 SOT23 T1, T2, T5, T6, T9, T10
TrenchMOS 6 PMV45EN SOT23 T3, T4, T7, T8, T11, Philips
T12
Transistor 6 ZXTN2010Z SOT89 T1B, T1T, T3B, T3T, Zetex
T5B, T5T
Transistor 6 ZXTP2012Z SOT89 T2B, T2T, T4B, T4T, Zetex
T6B, T6T
Connector 3 8-188275-6 16POL X1, X2, X3 Tyco
Table 7 External gate resistors RGext are listed below, all packages are 2010
Module RGext [Ω] R4T, R4B, R6T, R6B [Ω] R5T, R5B, R7T, R7B [Ω]
R12T, R12B, R14T, R14B [Ω] R13T, R13B, R15T, R15B [Ω]
R20T, R20B, R22T, R22B [Ω] R21T, R21B, R23T, R23B [Ω]
FS150R12KE3G 8.2 5.6 5.6
FS225R12KE3 3.3 1.5 1.5
FS300R12KE3 2.4 1.1 1.1
FS450R12KE3 1.6 1 1
CAD-data for the board decribed here are available on request. The use of this data is subjected to the
disclaimer given in this AN. Please contact, IGBT.Application@infineon.com.
References
9 References
[1] Infineon Technologies AG: AN2007-04, How to calculate and to minimize the dead time requirement
for IGBTs properly, V1.0, May 2007
[2] Bäßler, M., Ciliox A., Kanschat P.: On the loss – softness trade-off: Are different chip versions
needed for softness improvement? PCIM Europe 2009, Nuremberg, May 2009