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Mems

This document discusses chemoresistors, which are transducer devices that detect gases through changes in resistance of a chemically sensitive material. The resistance changes exponentially due to gas absorption on the material's surface. Common materials used include metal oxides like tin oxide, which is most popular. Tin oxide sensors operate at high temperatures, like 300-400°C, for better reaction kinetics and specificity. The basic reactions involve oxygen vacancies in the nonstoichiometric tin oxide lattice reacting with atmospheric oxygen to alter the material's electron concentration and detect various gases.

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Rahul Katiyal
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42 views

Mems

This document discusses chemoresistors, which are transducer devices that detect gases through changes in resistance of a chemically sensitive material. The resistance changes exponentially due to gas absorption on the material's surface. Common materials used include metal oxides like tin oxide, which is most popular. Tin oxide sensors operate at high temperatures, like 300-400°C, for better reaction kinetics and specificity. The basic reactions involve oxygen vacancies in the nonstoichiometric tin oxide lattice reacting with atmospheric oxygen to alter the material's electron concentration and detect various gases.

Uploaded by

Rahul Katiyal
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as DOC, PDF, TXT or read online on Scribd
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CHEMO RESISTORS

These are a class of transducer devices in which the resistance of chemically resistive material
changes due the absorption of various gases on the surfaces, thus as result of absorption of gases the
resistance changes. The absorption of gases helps in detection of the various gases. The resistance has
an exponential relationship. Depending upon the material used for transducer the coefficient of
absorption can both be positive or negative. An important characteristic is that the resistance
decreases with increase in temperature. These sensors can even be used to measure the relative
humidity.

R the resisteance at ant temperature

R0 resistance when absorption is zero

K the coefficient of sensitivity

T the temperature in Kelvin

t is the temperature coefficient

The schematic diagram is as shown in the figure.The device has two terminals which are internally
connected or separated by two separate electrodes.In between the electrodes active material,the main
ingredient of the chemoresisstor exists.The circuit current and hence voltage can be measured to dtect
resistance and thereby the gas.The active material and the electrodes are deposited by usual
photolithographic fabrication process.Silicon,silicon dioxide or aluminium oxide can be used as the
substrate.metal oxides or organic materials such as organic crystals and conducting polymers are
taken as active materials.when metal oxide is used, the device is called inorganic gas sensor.The
organic material,especially polymers are taken as active materials.Some of the metal oxides are
ZnO,TiO2,In2O3and silicon dioxide.The organic material as compared to inorganic material is highly
sensitive.The organic active material even have added advantages like linearity,long term stability,
good response time,selectivity and REVERSIBILITY.

Selectivity is the ability to produce output with respect to fixed input.

The principal class of material used today is semiconducting metal oxides, with tin oxide (SnO2)
being the most popular. To which oxide is painted manually a thick layer of porous tin. The film is
then sintered at a high temperature so that the appropriate nanocrystalline structure is formed. The
electrical resistance of the sintered film is then measured by a pair of gold electrodes and basic
potential divider circuit. Tin oxide devices are operated at various high temperatures and doped with
different materials to enhance their specificity. The response of a tin oxide sensor, in terms of its
relative conductance Gs/G0, where Gs is the conductance of a gas of fixed concentration and GO is
the conductance in air, is shown in Figure 8.52 (Yamazoe et al. 1983). The devices are operated at
high temperatures (typically between 300 and 400 °C) for several reasons. First, and most important,
the chemical reaction is more specific at higher temperatures, and, second, the reaction kinetics are
much faster, that is, the device responds in just a few seconds. Finally, operating the device well
above a temperature of 100 °C ameliorates the effect of humidity upon its response - a critical factor
for many chemical sensors.

The basic reactions that occur within the porous sintered film can be represented by
the following reactions. First, vacant sites within the nonstoichiometric tin oxide lattice
react with atmospheric oxygen to abstract electrons out of the conduction band of the tin
oxide creating chemisorbed oxygen sites such as O-, O2, and so on.

Chemotransistor
Chemocapacitor
Magnetotransistor and magnetodiodes

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