Power Electronics by D. W. Hart Chapter 01

Power Electronics by D. W.
Hart Chapter 01 1
Power Electronics by D. W. Hart Chapter 01 2
POWER ELECTRONICS CONCEPTS
Power absorbed
by the 2RL
Efficiency = 33.3% Efficiency = 100%

Voltage waveform vx can be expressed as a Fourier series containing a
dc term (the average value) plus sinusoidal terms at frequencies that
are multiples of the pulse frequency.
Low-pass filter is required
If the filter is lossless, the converter

will be 100 percent efficient.
To maintain the desired
output voltage at all load
conditions.

In practice, the filter will have some losses and will absorb some
power.
Additionally, the electronic device used for the switch will not be perfect and
will have losses.
However, the efficiency of the converter can still be quite high (more than 90
percent).
The required values of the filter components can be made smaller with higher
switching frequencies, making large switching frequencies desirable.

ELECTRONIC SWITCHES
Diode
Power absorbed by it zero (ideally)
Schottky
Schottky diodes have a

forward voltage drop of
typically 0.3 V. Turn-on
and off is faster
Reverse recovery time trr less than 1 µs.

Silicon carbide (SiC) diodes have very little reverse recovery, resulting in
more efficient circuits, especially in high-power applications.

Thyristors
Typically, gate turnoff
current is one third the
on-state anode current.
Large currents and large blocking

SCR voltages (high-power), but switching Gate turnoff (GTO)
frequencies are not high.
Without the high turnoff

gate current requirement
MOS-controlled thyristor (MCT).

MOS-controlled thyristor (MCT).

Thyristors (SCR)
To turn-off, current should

be less than holding current

Thyristor as full-wave rectifier
11
DIAC and TRIAC
TRIAC -- TRIode for Alternating Current

MOSFET Transistors are controllable
Power MOSFETs are of the enhancement type rather than the depletion type.

MOSFET
MOSFETs have on-state resistances
as low as a few milliohms.

BJT
Darlington
configuration

IGBT High efficiency and
fast switching

1.5 SWITCH SELECTION
Selection depends not only on the required voltage and current
levels but also on its switching characteristics.
Transistors and GTOs provide control of both turn-on and turnoff
SCRs of turn-on but not turnoff, and diodes of neither.
Switching speeds and the associated power losses are very important
The BJT is a minority carrier device and the MOSFET is a majority
carrier, giving the MOSFET an advantage in switching speeds.
BJT switching times may be a magnitude larger than those for the
MOSFET.
Therefore, the MOSFET generally has lower switching losses and is
preferred over the BJT.
First consideration is the required operating point and turn-on and
turnoff characteristics.

EXAMPLE 1-1
The circuit of Fig. 1-13a has two switches.
Switch S1 is on and connects the voltage source (Vs = 24 V) to the
current source (Io = 2 A).
It is desired to open switch S1 to disconnect Vs from the current source.
This requires that a second switch S2 closes to provide a path for
current Io, as in Fig. 1-13b.

At a later time, S1 must reclose and S2 must open to restore the
circuit to its original condition. The cycle is to repeat at a frequency
of 200 kHz. Determine the type of device required for each switch
and the maximum voltage and current requirements of each.
S1 must turn off when i1 = Io > 0 and must

turn on when v1 = Vs > 0. The device used
for S1 must therefore provide control of
both turn-on and turnoff.

S1 must turn off when i1 = Io > 0 and must turn on when v1 = Vs > 0.
The device used for S1 must therefore provide control of both turn-on
and turnoff.
A MOSFET would be a good choice

because of the required switching
frequency, simple gate-drive requirements,
and relatively low voltage and current
requirement (24 V and 2 A).

The steady-state operating points for S2 are
at (v2, i2) = ( - Vs, 0) in Fig. 1-13a and (0,
Io) in Fig. 1-13b, as shown in Fig. 1-13d.
The operating points match a diode

and no other control is needed for the
device.

A MOSFET would be a good
choice because of the required
switching frequency, simple gate-
drive requirements, and
relatively low voltage and current
requirement (24 V and 2 A).
The advantage of using a MOSFET is

that it has a much lower voltage drop
across it when conducting compared to
a diode, resulting in lower power loss
and a higher circuit efficiency.
The disadvantage is that a more
complex control circuit is required to
Synchronous Rectification
turn on S2 when S1 is turned off. or Synchronous Switching

SPICE, PSPICE, AND CAPTURE
Down load OrCAD software free version

SPICE, PSPICE, AND CAPTURE

Control Voltage

Load Resistor
Voltage

Why is the lower terminal of
V2 is connected at top of R1?

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Power Electronics by D. W.

Efficiency = 33.3% Efficiency = 100%

Power Electronics by D. W. Hart Chapter 01 4

If the filter is lossless, the converter

Power Electronics by D. W. Hart Chapter 01 5

Power Electronics by D. W. Hart Chapter 01 6

Schottky diodes have a

Reverse recovery time trr less than 1 µs.

Power Electronics by D. W. Hart Chapter 01 7

Large currents and large blocking

Without the high turnoff

MOS-controlled thyristor (MCT).

Power Electronics by D. W. Hart Chapter 01 9

To turn-off, current should

Power Electronics by D. W. Hart Chapter 01 10

Power Electronics by D. W. Hart Chapter 01 12

Power Electronics by D. W. Hart Chapter 01 13

Power Electronics by D. W. Hart Chapter 01 14

Power Electronics by D. W. Hart Chapter 01 15

Power Electronics by D. W. Hart Chapter 01 16

Power Electronics by D. W. Hart Chapter 01 17

Power Electronics by D. W. Hart Chapter 01 18

S1 must turn off when i1 = Io > 0 and must

Power Electronics by D. W. Hart Chapter 01 19

A MOSFET would be a good choice

Power Electronics by D. W. Hart Chapter 01 20

The operating points match a diode

Power Electronics by D. W. Hart Chapter 01 21

The advantage of using a MOSFET is

Power Electronics by D. W. Hart Chapter 01 22

Power Electronics by D. W. Hart Chapter 01 23

Power Electronics by D. W. Hart Chapter 01 24

Power Electronics by D. W. Hart Chapter 01 28

Power Electronics by D. W. Hart Chapter 01 29

Power Electronics by D. W. Hart Chapter 01 32

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