APPENDIX: EE2027 Summary of Equations

I. Review of Basic Concepts

Quantity Equation Remarks

Average value of 1

Root Mean Square (rms) value

1
of

Power Ratio in Decibel (dB)

dB 10

10 |Power Gain|
Voltage Ratio in Decibel (dB)
dB 20

20 |Voltage Gain|
Power in dBm
10
1 mW
3dB frequency of a RC 1 Output power decreases to half
passive filter 2 of its maximum value at .

∗ ∗
Real (Average) Power Re Re and are the rms value of
voltage and current, respectively

Apparent Power (or Voltage - | || |

Current Rating)
Power Factor cos ) - leading power factor
- lagging power factor

Power Transfer is maximum when

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II. Semiconductor pn Junction Diode

Quantity Equation Remarks

Current-voltage (IV) IS is the pn junction diode
relationship of a “real” pn- 1 saturation current.
junction diode
VT is thermal voltage (VT =
kT/q ≈ 0.025 V at T = 300 K)
n is the exponential factor and
has a value between 1 and 2.
n = 1 for ideal pn junction
diode.
Diode small signal resistance
(or incremental resistance)

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 III. Bipolar Junction Transistor (BJT)

Quantity Equation Remarks

Collector current of an npn / iC flows into the collector

BJT (ideal case)
IS is the saturation current.*
vBE is the voltage at the base
with-respect-to the emitter
VT is thermal voltage (VT =
kT/q ≈ 0.025 V at T = 300 K)
Collector current of an npn /
1 vCE is the voltage at the
BJT (with Early effect) collector with-respect-to the
emitter
VA is early voltage
Collector current of an pnp / iC flows out of the collector

BJT (ideal case)
vEB is the voltage at the emitter
with-respect-to the base
Collector current of an pnp /
1 vEC is the voltage at the emitter
BJT (with Early effect) with-respect-to the collector
Common-emitter current gain = /
Base current of an npn BJT /

Emitter current

Transconductance in the small- IC is the collector current at the

signal model dc bias point
Input resistance in the small-
signal model

Output resistance in the small-

signal model

*IS is also used to denote the saturation current of a pn junction diode. 

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IV. Metal Oxide Semiconductor Field Effect Transistor (MOSFET)

Quantity Equation Remarks

Gate oxide per unit area , tox is the gate oxide
thickness.
εox is the
permittivity of the
gate oxide.
εr,ox is the relative
permittivity of the
gate oxide.
= 8.854×10-14
F/cm is the
permittivity of free
space.
Saturation drain voltage for
n-MOSFET
Saturation drain voltage for | | | | | |
p-MOSFET
Drain current of an n- 1 Valid for
MOSFET operating in the 2
linear region 2

Drain current of an n- 1 Valid for

MOSFET operating in the 2
saturation region
Conductance parameter of 1
an n-MOSFET 2
Drain current of a p- 1 Valid for
| | | | | | | | | |
MOSFET operating in the 2 | | | |
linear region 2 | | | | | | | | | | | |
Drain current of a p- 1 Valid for
| | | | | |
MOSFET operating in the 2 | | | |
saturation region | | | | | | | |
Conductance parameter of 1
a p-MOSFET 2
Drain-to-source resistance 1
in the large signal model of 2
the n-MOSFET operating
in the linear region (small
VDS)
Drain-to-source resistance 1
in the large signal model of 2 | | | |
the p-MOSFET operating
in the linear region (small
|VDS|)

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 Transconductance in the 2 2 ID is the drain
small signal model of an n- 2 / current at the dc
MOSFET operating point.
Transconductance in the
2 | | | | 2 | |
small signal model of a p-
MOSFET 2| |/ | | | |
Output resistance in the 1 ID is the drain
small signal model current at the dc
operating point.
is the channel
length modulation
factor.
Drain current of an n- 1 Valid for
1
MOSFET operating in the 2
saturation region (with 1
channel length modulation
effect)
Drain current of a p- 1 Valid for
| | | | | | 1
MOSFET operating in the 2 | | | |
saturation region (with | | | | | |
channel length modulation | | | | 1 | |
effect)

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V. Opamp and Opamp Based Circuits

Inverting Amplifier Summing Amplifier

Rv1 Rv 2 Rv 3
v out
R1 R2 R3

R
v out R2
v in R1

Non-inverting Amplifier Buffer

v out R2 v out
1 1
v in R1 v in
Integrator Differentiator

v out
sCR
v in

v out 1
v in sCR
SK Lowpass Filter SK Highpass Filter

K v out Ks 2
v out C1C 2 R1R 2
v in 1 1 1 K 1
v in
s2 s
1 1 1 K 1 s2 s
C1R1 C 2R 2 C1R 2 C 2R 2 C1C 2 R1R 2 C2R 2 C1R2 C1R1 C1R1 C1C2R1R2
Ho 2
o
Hos 2
s2 o
s 2
o s2 o
s 2
o
Q Q

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 Logarithm Amplifier Exponential Amplifier

I in
Vout VT ln Vin
VT
IS Vout R1I S e
Instrumentation Amplifier Super Diode

R2
v out v id
R1

Opamp Circuits Non-idealities:

CMRR: GBW:
,

,
, 1
20
Loop gain
Noise: PSRR: ,
Noise voltage spectral density (V2/Hz)

,
2 20
First order lowpass
filtered white noise
Vn2

f3dB Frequency (Hz)

Slew Rate:

2 2

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VI. Single-Stage Amplifier Analysis

 
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