BXE_MCQ_UNIT 1

1. How many junction/s do a diode consist?

a) 0

b) 1

c) 2

d) 3

Answer: b

Explanation: Diode is a one junction semiconductor device which has one cathode and anode. The
junction is of p-n type.

2. If the positive terminal of the battery is connected to the anode of the diode, then it is known as

a) Forward biased

b) Reverse biased

c) Equilibrium

d) Schottky barrier

Answer: a

Explanation: When a positive terminal is connected to the anode, the diode is forward biased which lets
the flow of the current in the circuit.

3. During reverse bias, a small current develops known as

a) Forward current

b) Reverse current

c) Reverse saturation current

d) Active current

Answer: c

Explanation: When the diode is reverse biased, a small current flows between the p-n junction which is of
the order of the Pico ampere. This current is known as reverse saturation current.

4. If the voltage of the potential barrier is V0. A voltage V is applied to the input, at what moment will the
barrier disappear?

a) V< V0

b) V= V0
c) V> V0

d) V<< V0

Answer: b

Explanation: When the voltage will be same that of the potential barrier, the potential barrier disappears
resulting in flow of current.

5. During the reverse biased of the diode, the back resistance decrease with the increase of the
temperature. Is it true or false?

a) True

b) False

Answer: a

Explanation: Due to the increase in the reverse saturation current due to the increase in the temperature,
the back resistance decrease with the increasing temperature.

This set of Electronic Devices and Circuits Multiple Choice Questions & Answers (MCQs) focuses on
“Zener Diode”.

6. Zener diodes are also known as

a) Voltage regulators

b) Forward bias diode

c) Breakdown diode

d) None of the mentioned

Answer: c

Explanation: Zener diodes are used as voltage regulators but they aren’t called voltage regulators. They
are called breakdown diodes since they operate in breakdown region.

7. Which of the following is true about the resistance of a Zener diode?

a) It has an incremental resistance

b) It has dynamic resistance

c) The value of the resistance is the inverse of the slope of the i-v characteristics of the Zener diode

d) All of the mentioned

Answer: d

Explanation: All of the statements are true for the resistance of the zener diode.

8. In Zener diode, for currents greater than the knee current, the v-i curve is almost

a) Almost a straight line parallel to y-axis

c) Equally inclined to both the axes with a positive slope

d) Equally inclined to both the axes with a negative slope

Answer: b

Explanation: Note that the curve is v-I curve and not an i-v curve.

9. Zener diodes can be effectively used in voltage regulator. However, they are these days being replaced
by more efficient

a) Operational Amplifier

b) MOSFET

c) Integrated Circuits

d) None of the mentioned

Answer: c

Explanation: ICs have been widely adapted by the industries over conventional zener diodes as their
better replacements for a voltage regulators.

10. Which of the following isn’t a type of rectifier?

a) Precision Half-wave Rectifier

b) Bridge Rectifier

c) Peak Rectifier

d) None of the mentioned

Answer: d

Explanation: All of the mentioned are different types of a rectifier.

11.For a half wave or full wave rectifier the Peak Inverse Voltage of the rectifier is always

a) Greater than the input voltage

b) Smaller than the input voltage

c) Equal to the input voltage

d) Greater than the input voltage for full wave rectifier and smaller for the half wave rectifier

Answer: b

Explanation: The peak input voltage is smaller than the input voltage due to the presence of diode(s). A
single diode reduces the output voltage by approximately 0.7V.

12. Bridge rectifier is an alternative for

b) Peak rectifier

c) Half wave rectifier

d) None of the mentioned

Answer: a

Explanation: Bridge rectifier is a better alternative for a full wave rectifier.

13. Which of the following is true for a bridge rectifier?

a) The peak inverse voltage or PIV for the bridge rectifier is lower when compared to an identical center
tapped rectifier

b) The output voltage for the center tapped rectifier is lower than the identical bridge rectifier

c) A transistor of higher number of coil is required for center tapped rectifier than the identical bridge
rectifier

d) All of the mentioned

Answer: d

Explanation: All of the given statements are true for a bridge rectifier.

14. The diode rectifier works well enough if the supply voltage is much than greater than 0.7V. For
smaller voltage (of few hundreds of millivolt) input which of the following can be used?

a) Superdiode

b) Peak rectifier

c) Precision rectifier

d) None of the mentioned

Answer: a

Explanation: For the supply voltages less than 0.7V super diodes are used.

15. A simple diode rectifier has ‘ripples’ in the output wave which makes it unsuitable as a DC source. To
overcome this one can use

a) A capacitor in series with a the load resistance

b) A capacitor in parallel to the load resistance

c) Both of the mentioned situations will work

d) None of the mentioned situations will work

Explanation: A capacitor is parallel with a resistor can only makes ripples go away. Series connection will
become equal to an open circuit once the capacitor is fully charged.

16. Ripple factor of bridge full wave rectifier is _________

a) 1.414

b) 1.212

c) 0.482

d) 1.321

Answer: c

Explanation: Ripple factor of a rectifier measures the ripples or AC content in the output. It is obtained by
dividing AC rms output with DC output. For full wave bridge rectifier it is 0.482.

17. If input frequency is 50Hz then ripple frequency of bridge full wave rectifier will be equal to
_________

a) 200Hz

b) 50Hz

c) 45Hz

d) 100Hz

Answer: d

Explanation: Since in the output of bridge rectifier one half cycle is repeated hence frequency will twice
as that of input frequency. That is 100Hz.

18. Transformer utilization factor of a bridge full wave rectifier is equal to _________

a) 0.62

b) 0.69

c) 0.81

d) 0.43

Answer: c

Explanation: Transformer utilization factor is the ratio of AC power delivered to load to the DC power
rating. This factor indicates effectiveness of transformer usage by rectifier. For bridge full wave rectifier
it is equal to 0.81.

19. If peak voltage on a bridge full wave rectifier circuit is 5V and diode cut-in voltage is 0.7, then peak
inverse voltage on diode will be _________
a) 4.3V

b) 5.7V

c) 10V

d) 5V

Answer: d

Explanation: PIV is the maximum reveres bias voltage that can be appeared across a diode in the circuit.
If PIV rating of the diode is less than this Value breakdown of diode may occur. Therefore, PIV rating of
diode should be greater than PIV in the circuit. For bridge rectifier PIV is 5V.

20. Efficiency of bridge full wave rectifier is _________

a) 81.2%

b) 50%

c) 40.6%

d) 45.3%

Answer: a

Explanation: It is obtained by taking ratio of DC power output to maximum AC power delivered to load.
Efficiency of a rectifier is the effectiveness of rectifier to convert input power to DC. It is usually
expressed in percentage. For bridge full wave rectifier, it is 81.2%.

21. A light emitting diode is _________

a) Heavily doped

b) Lightly doped

c) Intrinsic semiconductor

d) Zener diode

Answer: a

Explanation: A light emitting diode, LED, is heavily doped. It works under forward biased conditions.
When the electrons recombine with holes, the energy released in the form of photons causes the
production of light.

22. Which of the following materials can be used to produce infrared LED?

a) Si

b) GaAs

c) CdS

d) PbS
Answer: b

Explanation: GaAs has an energy band gap of 1.4 eV. It can be used to produce infrared LED. Various
other combinations can be used to produce LED of different colors.

23. The reverse breakdown voltage of LED is very low.

a) True

b) False

Answer: a

Explanation: The reverse breakdown voltages of LEDs are very low, typically around 5 V. So, if access
voltage is provided, they will get fused.

24. What should be the band gap of the semiconductors to be used as LED?

a) 0.5 eV

b) 1 eV

c) 1.5 eV

d) 1.8 eV

Answer: d

Explanation: Semiconductors with band gap close to 1.8 eV are ideal materials for LED. They are made
with semiconductors like GaAs, GaAsP etc.

25. What should be the biasing of the LED?

a) Forward bias

b) Reverse bias

c) Forward bias than Reverse bias

d) No biasing required

Answer: a

Explanation: The LED works when the p-n junction is forward biased i.e., the p- side is connected to the
positive terminal and n-side to the negative terminal.

26. Which process of the Electron-hole pair is responsible for emitting of light?

a) Generation

b) Movement

c) Recombination
d) Diffusion

Answer: c

Explanation: When the recombination of electrons with holes takes place, the energy is released in the
form of photon. This photon is responsible for the emission of light.

27. What is the bandwidth of the emitted light in an LED?

a) 1 nm to 10 nm

b) 10 nm to 50 nm

c) 50 nm to 100 nm

d) 100 nm to 500 nm

Answer: b

Explanation: The bandwidth of the emitted light is 10 nm to 50 nm. Thus, the emitted light is nearly (but
not exactly) monochromatic.

28. To obtain a higher value of resistance, resistors are connected in:

a) Reverse

b) Forward

c) Parallel

d) Series

Answer: d

29. What does LED stand for?

a) Light Emitting Display

b) Low Energy Display

c) Light Emitting Diode

d) Light Emitting Detector

Answer: c

30. A zener diode works on the principle of_________

a) tunneling of charge carriers across the junction

b) thermionic emission

c) diffusion of charge carriers across the junction

Answer: a

Explanation: Due to zener effect in reverse bias under high electric field strength, electron quantum
tunneling occurs. It’s a mechanical effect in which a tunneling current occurs through a barrier. They
usually cannot move through that barrier.

31. Which of the following are true about a zener diode?

1) it allows current flow in reverse direction also

2) it’s used as a shunt regulator

3) it operates in forward bias condition

a) 3 only

b) 1 and 2

c) 2 and 3

d) 2 only

Answer: b

Explanation: The operation of a zener diode is made in reverse bias when breakdown occurs. So, it allows
currnt in reverse direction. The most important application of a zener diode is voltage or shunt regulator.

32. When the voltage across the zener diode increases_________

a) temperature remains constant and crystal ions vibrate with large amplitudes

b) temperature increases and crystal ions vibrate with large amplitudes

c) temperature remains constant and crystal ions vibrate with smaller amplitudes

d) temperature decreases and crystal ions vibrate with large amplitudes

Answer: b

Explanation: When voltage is increased, the tunnelling at reverse bias increases. The voltage rises
temperature. The crystal ions with greater thermal energy tend to vibrate with larger amplitudes.

33. Avalanche breakdown in zener diode is ______

a) electric current multiplication takes place

b) phenomenon of voltage multiplication takes place

c) electrons are decelerated for a period of time

d) sudden rise in voltage takes place.

Answer: a
Explanation: The carriers in transition region are accelerated by electric field to energies. That energies
are sufficient to create electron current multiplication. A single carrier that is energized will collide with
another by gaining energy. Thus an avalanche multiplication takes place.

34. The zener diode is heavily doped because______

a) to have low breakdown voltage

b) to have high breakdown voltage

c) to have high current variations

d) to maintain perfect quiescent point

Answer: a

Explanation: The value of reverse breakdown voltage at which zener breakdown occurs is controlled by
amount of doping. If the amount of doping is high, the value of voltage at which breakdown occurs will
decrease. Better doping gives a sooner breakdown voltage.

35. Which of the following is not a characteristic of LED?

a) Fast action

b) High Warm-up time

c) Low operational voltage

d) Long life

Answer: b

Explanation: The warm-up time required should be lower so that the lighting action can take place faster.
This is one of the advantages LED have over incandescent lamps.

36. In a P-N Junction, the depletion region is reduced when _________

a) P side is connected to the negative side of the terminal

b) P side is connected to the positive side of the terminal

c) N side is connected to the positive side of the terminal

d) Never reduced

Answer: b

Explanation: When the P-side of a P-N junction is connected to the positive terminal of a battery, the
junction is forward biased and hence the depletion region reduces.

37. The voltage at which forward bias current increases rapidly is called as ___________

a) Breakdown Voltage
b) Forward Voltage

c) Knee Voltage

d) Voltage barrier

Answer: c

Explanation: Till the knee voltage, the current in a semiconductor increases slowly. After Knee voltage,
the current increases rapidly for a small change in the voltage.

38. The Knee Voltage for germanium is _________

a) 0.1 V

b) 0.3 V

c) 0.7 V

d) 1.4 V

Answer: b

Explanation: Knee voltage or the threshold voltage is the point after which the current increases rapidly.
For germanium, it is about 0.3 V while for silicon it is 0.7 V.

39. The resistance of the semiconductor decreases in forward biased.

a) True

b) False

Answer: a

Explanation: When a P-N Junction diode is forward biased, the thickness of the depletion region becomes
negligibly small. Thus, the resistance of the semiconductor decreases.

40. The current produced in reverse-bias is called as __________

a) Reverse Current

b) Breakdown Current

c) Negative Current

d) Leakage Current

Answer: d

Explanation: When the diode is reverse biased, the reverse bias voltage produces an extremely small
current, about a few micro amperes. This is called leakage current.

41. Which diode is designed to work under breakdown region?

a) Photodiode
b) Light Emitting Diode

c) Solar Cell

d) Zener diode

Answer: d

Explanation: Zener Diode is designed specifically to operate in the breakdown region. It is mostly used as
a voltage regulator in various circuits.

42. The P-N junction is a non-ohmic device.

a) True

b) False

Answer: a

Explanation: The current-voltage curve of a P-N junction diode is not a straight line. Thus, it does not
obey Ohm’s law and is a non-ohmic device.

43.The leakage current is measured in ________

a) A

b) mA

c) μA

d) nA

Answer: c

Explanation: As in the reverse current, the resistance increases, the current produced is extremely low.
And hence, it is measured in microamperes.

44. Ripple factor of bridge full wave rectifier is?

a) 1.414

b) 1.212

c) 0.482

d) 1.321

Answer: c

Explanation: Ripple factor of a rectifier measures the ripples or AC content in the output. It’s obtained by
dividing AC rms output with DC output. For full wave bridge rectifier it is 0.482.
45.DC average current of a bridge full wave rectifier (where Im is the maximum peak current of input).

a) 2Im

b) Im

c) Im/2

d) 1.414Im

Answer: b

Explanation: Average DC current of half wave rectifier is Im. Since output of half wave rectifier contains
only one half of the input. The average value is the half of the area of one half cycle of sine wave with
peak Im. This is equal to Im.

46. DC power output of bridge full wave rectifier is equal to (Im is the peak current and RL is the load
resistance).

a) 2 Im2RL

b) 4 Im2RL

c) Im2RL

d) Im2 RL/2

Answer: b

Explanation: DC output power is the power output of the rectifier. We know VDC for a bridge rectifier is
2Vm and IDC for a bridge rectifier is 2Im. We also know VDC=IDC/RL. Hence output power is
4Im2RL.

47. If input frequency is 50Hz then ripple frequency of bridge full wave rectifier will be equal
to_________

a) 200Hz

b) 50Hz

c) 45Hz

d) 100Hz

Answer: d

Explanation: Since in the output of bridge rectifier one half cycle is repeated, the frequency will be twice
as that of input frequency. So, f=100Hz.

48. Transformer utilization factor of bridge full wave rectifier _________

a) 0.623

b) 0.812
c) 0.693

d) 0.825

Answer: b

Explanation: Transformer utilization factor is the ratio of AC power delivered to load to the DC power
rating. This factor indicates effectiveness of transformer usage by rectifier. For bridge full wave rectifier
it’s equal to 0.693.

49.Efficiency of bridge full wave rectifier is_________

a) 81.2%

b) 50%

c) 40.6%

d) 45.33%

Answer: a

Explanation: It’s obtained by taking ratio of DC power output to maximum AC power delivered to load.
Efficiency of a rectifier is the effectiveness of rectifier to convert AC to DC. It’s usually expressed inn
percentage. For bridge full wave rectifier, it’s 81.2%.

50. A voltage regulator needs to provide a constant voltage in spite of the fact that there may be

a) Change in the load current drawn from the terminals of the regulator

b) Change of the DC power supply that feeds the regulator circuit

c) None of the mentioned

d) All of the mentioned

Answer: d

Explanation: Voltage regulators are required in both of the situations mentioned.

51. In diffusion, the particles flow from a region of _______ to region of ___________

a) High, low

b) Low , high

c) High , medium

d) Low, medium

Answer: a

Explanation: Diffusion is the process of flow of particles form the region of the high concentration to a
region of low concentration.
52. Efficiency of a half wave rectifier is

a) 50%

b) 60%

c) 40.6%

d) 46%

Answer: c

Explanation: Efficiency of a rectifier is the effectiveness to convert AC to DC. For half wave it’s 40.6%.
It’s given by, Vout/Vin*100.

53. Transformer utilisation factor of a half wave rectifier is _________

a) 0.234

b) 0.279

c) 0.287

d) 0.453

Answer: c

Explanation: Transformer utilisation factor is the ratio of AC power delivered to load to the DC power
rating. This factor indicates effectiveness of transformer usage by rectifier. For a half wave rectifier, it’s
low and equal to 0.287.

54. If the input frequency of a half wave rectifier is 100Hz, then the ripple frequency will be_________

a) 150Hz

b) 200Hz

c) 100Hz

d) 300Hz

Answer: c

Explanation: The ripple frequency of the output and input is same. This is because, one half cycle of input
is passed and other half cycle is seized. So, effectively the frequency is the same.
55. Ripple factor of a half wave rectifier is_________(Im is the peak current and RL is load resistance)

a) 1.414

b) 1.21

c) 1.4

d) 0.48

Answer: b

Explanation: The ripple factor of a rectifier is the measure of disturbances produced in the output. It’s the
effectiveness of a power supply filter to reduce the ripple voltage. The ratio of ripple voltage to DC output
voltage is ripple factor which is 1.21.

56. For an ideal diode which of the following is true?

a) It allows the passage of current in the forward bias with zero potential drop across the diode

b) It does not allow the flow of current in reverse bias

c) All of the mentioned

d) None of the mentioned

Answer: c

Explanation: Both of the facts mentioned hold true for an ideal operational amplifier.

57. Does a semiconductor satisfy the ohm’s law?

a) True

b) False

Answer: a

Explanation: V=IR

J=σE

I/A=σ(V/L)

V=(L/ σA)*I=(ρL)*I/A=IR

Thus, above equation satisfies Ohm’s law.

58. In which range of temperature, freeze out point begins to occur?

a) Higher range

b) Lower range
c) Middle range

d) None

Answer: b

Explanation: At lower range of temperature, the concentration and conductivity decreases with lowering
of the temperature.

59.When a forward biased is applied to a diode, the electrons enter to which region of the diode?

a) P-region

b) N-region

c) P-n junction

d) Metal side

Answer: a

Explanation: When the forward biased is applied, the electrons enter to the p-region and the holes enter to
the n-region so that holes can flow from p-region to n-region. Whereas, the electrons can travel from n-
region to p-region.

60. The current in the diode is

1. Unipolar

2. Bipolar

a) I only

b) II only

c) I and II both

d) Neither I nor II

Answer: b

Explanation: The current in the diode consists of both the electrons and holes. So, it is bipolar.

61. A crystal diode has ………

1. one pn junction

2. two pn junctions

3. three pn junctions

4. none of the above

Answer : 1
62. A crystal diode has forward resistance of the order of ……………

1. kΩ

2. Ω

3. MΩ

4. none of the above

Answer : 2

63. If the arrow of crystal diode symbol is positive w.r.t. bar, then diode is ………….. biased.

1. forward

2. reverse

3. either forward or reverse

4. none of the above

Answer : 1

64. The reverse current in a diode is of the order of ……………….

1. kA

2. mA

3. μA

4. A

Answer : 3

65. The forward voltage drop across a silicon diode is about …………………

1. 2.5 V

2. 3 V

3. 10 V

4. 0.7 V

Answer : 4

66. A crystal diode is used as ……………

1. an amplifier

2. a rectifier

3. an oscillator

4. a voltage regulator
Answer : 2

67. The d.c. resistance of a crystal diode is ………….. its a.c. resistance

1. the same as

2. more than

3. less than

4. none of the above

Answer : 3

68. An ideal crystal diode is one which behaves as a perfect ……….. when forward biased.

1. conductor

2. insulator

3. resistance material

4. none of the above

Answer : 1

69. The ratio of reverse resistance and forward resistance of a germanium crystal diode is about
………….

1. 1 : 1

2. 100 : 1

3. 1000 : 1

4. 40,000 : 1

Answer : 4

70. The leakage current in a crystal diode is due to …………….

1. minority carriers

2. majority carriers

3. junction capacitance

4. none of the above

Answer :1

71. If the temperature of a crystal diode increases, then leakage current ………..

1. remains the same

2. decreases
 3. increases

4. becomes zero

Answer :3

72. The PIV rating of a crystal diode is ………….. that of equivalent vacuum diode

1. the same as

2. lower than

3. more than

4. none of the above

Answer :2

73. If the doping level of a crystal diode is increased, the breakdown voltage………….

1. remains the same

2. is increased

3. is decreased

4. none of the above

Answer :3

74. The knee voltage of a crystal diode is approximately equal to ………….

1. applied voltage

2. breakdown voltage

3. forward voltage

4. barrier potential

Answer :4

75. When the graph between current through and voltage across a device is a straight line, the
device is referred to as ……………….

1. linear

2. active

3. nonlinear

4. passive

Answer :1

76. When the crystal current diode current is large, the bias is …………
 1. forward

2. inverse

3. poor

4. reverse

Answer :1

77. A crystal diode is a …………… device

1. non-linear

2. bilateral

3. linear

4. none of the above

Answer :1

78. A crystal diode utilises …………….. characteristic for rectification

1. reverse

2. forward

3. forward or reverse

4. none of the above

Answer :2

79. When a crystal diode is used as a rectifier, the most important consideration is ………..

1. forward characteristic

2. doping level

3. reverse characteristic

4. PIC rating

Answer :4

80. If the doping level in a crystal diode is increased, the width of depletion layer………..

1. remains the same

2. is decreased

3. in increased

4. none of the above

Answer :3
81. A zener diode has ………..

1. one pn junction

2. two pn junctions

3. three pn junctions

4. none of the above

Answer :1

82. A zener diode is used as …………….

1. an amplifier

2. a voltage regulator

3. a rectifier

4. a multivibrator

Answer :2

83. The doping level in a zener diode is …………… that of a crystal diode

1. the same as

2. less than

3. more than

4. none of the above

Answer :3

84. A zener diode is always ………… connected.

1. reverse

2. forward

3. either reverse or forward

4. none of the above

Answer :1

85. A zener diode utilizes ……….. characteristics for its operation.

1. forward

2. reverse

3. both forward and reverse

4. none of the above

86. In the breakdown region, a zener didoe behaves like a …………… source.

1. constant voltage

2. constant current

3. constant resistance

4. none of the above

Answer :1

87. A zener diode is destroyed if it…………..

1. is forward biased

2. is reverse biased

3. carrier more than rated current

4. none of the above

Answer :3

88. A series resistance is connected in the zener circuit to………..

1. properly reverse bias the zener

2. protect the zener

3. properly forward bias the zener

4. none of the above

Answer :2

89. A zener diode is …………………. device

1. a non-linear

2. a linear

3. an amplifying

4. none of the above

Answer :1

90. A zener diode has ………….. breakdown voltage

1. undefined

2. sharp

3. zero
 4. none of the above

Answer :2

91. ……………. rectifier has the lowest forward resistance

1. solid state

2. vacuum tube

3. gas tube

4. none of the above

Answer :1

92. Mains a.c. power is converrted into d.c. power for ……………..

1. lighting purposes

2. heaters

3. using in electronic equipment

4. none of the above

Answer :3

93. The disadvantage of a half-wave rectifier is that the……………….

1. components are expensive

2. diodes must have a higher power rating

3. output is difficult to filter

4. none of the above

Answer :3

94. If the a.c. input to a half-wave rectifier is an r.m.s value of 400/√2 volts, then diode PIV rating is
………………….

1. 400/√2 V

2. 400 V

3. 400 x √2 V

4. none of the above

Answer :2

95. The ripple factor of a half-wave rectifier is …………………

1. 2
 2. 1.21

3. 2.5

4. 0.48

Answer :2

96. There is a need of transformer for ………………..

1. half-wave rectifier

2. centre-tap full-wave rectifier

3. bridge full-wave rectifier

4. none of the above

Answer :2

97. The PIV rating of each diode in a bridge rectifier is ……………… that of the equivalent centre-
tap rectifier

1. one-half

2. the same as

3. twice

4. four times

Answer :1

98. For the same secondary voltage, the output voltage from a centre-tap rectifier is ………… than
that of bridge rectifier

1. twice

2. thrice

3. four time

4. one-half

Answer :4

99. If the PIV rating of a diode is exceeded, ………………

1. the diode conducts poorly

2. the diode is destroyed

3. the diode behaves like a zener diode

4. none of the above

100. A 10 V power supply would use …………………. as filter capacitor.

1. paper capacitor

2. mica capacitor

3. electrolytic capacitor

4. air capacitor

Answer :3

101. A 1,000 V power supply would use ……….. as a filter capacitor

1. paper capacitor

2. air capacitor

3. mica capacitor

4. electrolytic capacitor

Answer :1

102. The ……………….. filter circuit results in the best voltage regulation

1. choke input

2. capacitor input

3. resistance input

4. none of the above

Answer :1

103. A half-wave rectifier has an input voltage of 240 V r.m.s. If the step-down transformer has a
turns ratio of 8:1, what is the peak load voltage? Ignore diode drop.

1. 27.5 V

2. 86.5 V

3. 30 V

4. 42.5 V

Answer :4

104. The maximum efficiency of a half-wave rectifier is ………………..

1. 40.6 %

2. 81.2 %
 3. 50 %

4. 25 %

Answer :1

105. The most widely used rectifier is ……………….

1. half-wave rectifier

2. centre-tap full-wave rectifier

3. bridge full-wave rectifier

4. none of the above

Answer :3