Module 5 - PHOTONICS
Module 5 - PHOTONICS
Dr. SALINIGOPAL M S
Assistant Professor
Department of Applied Science
SCT, Pappanamcode
Module 1
• Photonics – Branch of science deals with the production, control and detection of
photons
• Photonic devices have advantages over electronic devices because of very high
speed of light.
LED
• A SEMICONDUCTOR DEVICE
• Heavily doped PN junction that emits light when it is forward biased
• Semiconductor materials used define the color of the light produced
• A p-n diode specially designed to produce visible and IR light on forward biasing
is called an LED.
• Electrical energy converted to light energy
• When LED is energized it emits visible light due to the electron-hole pair recombination.
• LED operated on the principle of injection luminescence
Working of LED
On forward biasing electrons from n-region move to p-region and holes to n-region. The free
electrons are minority carriers in p-side and hole in the n-side. Biasing increases the minority
carrier population on either side and is called minority carrier injection. These excess minority
carriers make recombination with the majority carriers , eg: the excess electrons in the conduction
band of p-side recombines with majority holes in the valence band. Or the electrons make a
downward transition from upper energy level to lower level and gives out (liberates) excess
energy in the form of radiation.
If 𝐸𝑔 is band gap of semiconductor, the emitted energy is given by
ℎ𝑐
𝐸𝑔 = hν =
λ
ℎ𝑐
The wavelength of emission is given by, λ=
𝐸𝑔
• The colour of emitted light depends on the type of material used
• GaP gives green ,GaN gives blue, GaAsP gives red etc…
• Also the semiconductor should have a bandgap of ~ 1.5ev to 2.5 ev
LED characteristics
• Junction voltage – current characteristics of an LED is similar to the I-V characteristics of
diodes
• LED starts emitting light as its forward voltage reaches at a particular level and its intensity will
further increase with the increase in applied forward voltage.
• When source voltage greater then LED’s forward voltage is applied it may damage the LED and
to avoid this a series dropping resistor is used to remove the extra voltage.
• When reverse biased it does not work.
Advantages of LED
LEDs are extremely bright, 3 times brighter than traditional light source such as incandescent, florescent,
high intensity discharge lights
• High Energy efficiency
• Long life – life span long than 10yrs
• Reliability
• No – Noise
• Better safety and security
• No high temperature
• The response time is very less, only about 10 nanoseconds
• Helps in saving energy
• Faster in switching
• Compatible with IC technology
• Small in size and light weight
• Response time is less
Disadvantages of LED
Applications
• Can be used as light sources in optical fibre communication systems
• Used in digital displays in all modern day electronic devices
• Used as bulb in homes and industries
• Used in motorcycles and cars
• Used in mobile phones to display the message
• At the traffic light signals
Photo Detector
• Device used to convert light signals that hit the junction into a voltage or current
• Photodetectors are required at the receiving end of an optical communication link
• Essential requirements – High reliability, short response time, low bias voltage, high electrical response
• Example – photodiodes, phototransistors
• Similar to photo detector is solar cell
Photo Diodes
• It is a reverse biased semiconductor p-n diode whose reverse current increases with the increase in
intensity of light incident at the junction. The device is enclosed in a transparent case so that its junction
is exposed to radiation.
• In the absence of external radiation ,the device behaves like an ordinary reverse biased p-n junction.
• It is a type of light detector
• Convert light into current or voltage based on the mode of operation of the device
• Surface area increases – response time decreases
• Similar to regular semiconductor diodes
• Transparent enough to let light reach the delicate part
of the device
Types of Photo Diodes
• When light is incident on the p-n junction of a photodiode, the atoms at the junction absorbs
energy of photon and create more electrons and holes. These additional carriers (photo carriers)
increases the reverse current called as photo current. The width of depletion region should be
increased to absorb a large quantity of light.
Applications of photodiode
• Used in consumer electronic devices like smoke detectors, compact disc players, televisions
and remote controls
• Widely used in medical field – instruments to analyze samples, used in blood gas monitors
• Much faster and more complex than normal PN junction diodes and hence are frequently used
for lighting regulation and in optical communications
PIN Photodiode
• Type of photodiode in which a very lightly doped and wide intrinsic semiconductor is
introduced between heavily doped P and N regions
• This is to improve the sensitivity of a photodiode
• When reverse biasing is applied the depletion region extends throughout the intrinsic region.
• When light is incident on the diode, electrons are excited from the valence band to conduction
band. And this results in large number of
electron-hole pairs. These carriers do not
recombine and they get drift across by the
electric field in the intrinsic layer.
This contributes to the photo current, improve
the efficiency, speed and sensitivity
❖ Applications – used in RF and microwave switches
fibre optic network cards, to detect X-rays & gamma rays
Solar cell
• Solar cell is a heavily doped pn junction.
• It is a p-n junction diode which converts solar energy into electrical energy.
• Sunlight is trapped inside the device to produce electric effect in the form of voltage.
• Normally used materials for solar cell fabrication – Silicon, GaAs, CdSe
Construction
The p-n junction is constructed using semiconducting materials such as germanium silicon,
gallium arsenide, cadmium arsenide etc..
The p-n junction is packed in a cylindrical metallic container with glass window on its top so that
light falls on both p and n type materials uniformly.
To avoid recombination of electrons and holes the thickness of p and n region is made small and
the doping is extremely high.
The anode connection is from bottom p layer and cathode from the top n layer. Antireflection
coating is made on top layer to prevent light loss due to reflection.
Working
• When light is incident at the junction , the atoms absorb energy and electron –hole pairs are
generated in both p and n regions.
• They reach the depletion region by diffusion where they are separated by a strong potential
barrier existing there.
• The minority carriers on either sides (electrons in p-region and holes in n-region) are supported
by this barrier and their flow across the junction constitutes a current which is proportional to
the illumination and on the area of diode being exposed to light.
𝑚𝑎𝑥𝑖𝑚𝑢𝑚 𝑜𝑢𝑡𝑝𝑢𝑡 𝑒𝑙𝑒𝑐𝑡𝑟𝑖𝑐𝑎𝑙 𝑝𝑜𝑤𝑒𝑟
• Efficiency, η =
𝑖𝑛𝑝𝑢𝑡 𝑜𝑝𝑡𝑖𝑐𝑎𝑙 𝑝𝑜𝑤𝑒𝑟
𝑃 𝑚𝑎𝑥
η=
𝑙𝑖𝑔ℎ𝑡 𝑖𝑛𝑡𝑒𝑛𝑠𝑖𝑡𝑦 𝑋 𝑎𝑟𝑒𝑎 𝑜𝑓 𝑠𝑜𝑙𝑎𝑟 𝑐𝑒𝑙𝑙
The technology that transmits information as light pulses along a glass or plastic fiber
• It is a flexible, transparent fiber made by drawing glass (silica) or plastic to a diameter slightly
thicker than that of a human hair
• Very thin cylindrical shaped transparent dielectric material surrounded by another transparent
dielectric material of comparatively low refractive index
• Inner cylinder – core
• Outer cylinder - cladding
• Core has higher refractive index than that of cladding, 𝑛1 > 𝑛2
𝑛1 - refractive index of core, 𝑛2 - refractive index of cladding
• Light admitted through one end of the core
• Propagated by repeated total internal reflection at the boundary of core and cladding
Types of optical fibres
• Classification depends on how the total internal reflection (TIR) is achieved
• Total internal reflection is possible by the one step difference in refractive index between core
and cladding or by very small gradually diminishing steps
• Step Index Fibre
• Graded Index Fibre
• Step Index Fibre
Graded Index Fibre
Step Index Fibre Graded Index Fibre
The refractive index of the core is uniform Core has gradually diminished refractive index
throughout its bulk
Refractive index decreases from n1 to n2 Core is surrounded by cladding which has
abruptly at the core cladding boundary constant refractive index
Cos ɸ𝑐 =
𝑛12 − 𝑛22
Cos ɸ𝑐 = ………… (2)
𝑛1
𝑛12 − 𝑛22
N. A. = 𝑆𝑖𝑛 ∝𝑚 =
𝑛0
For air, 𝑛0 = 1
N. A. = 𝑆𝑖𝑛 ∝𝑚 = 𝑛12 − 𝑛22
Fibre bundles
• As biosensors
• To examine heart, pancreas etc
• Used in endoscopy
• Gastroscope – to examine the stomach and to photograph tumors and ulcer
• Bronchoscope – to see upper passages of lungs
• Orthoscope - to see small spaces within joints
Fibre optic sensors
• Useful for monitoring pressure changes in arteries, bladder, urethra etc. Also
used for monitoring pressure changes in gaseous reactants and products in
chemical industries
Optical Sensor to detect sound waves
• The smaller the size of the core, the greater will be the sensitivity
• To detect deep sea noise levels in the frequency range of 100 Hz to 1kHz
• To detect displacement of a few angstroms
Phase Modulated Sensor
• External perturbation causes a change in the phase of the light passing through the fibre
• Phase change is measured accurately by interferometric techniques