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    1 Exe3 Sol

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    Tarak BENSLIMANE
    This document provides solutions to exercises from Chapter 3 of a textbook on photovoltaics. Exercise 3.1 calculates parameters for charge carriers in semiconductors, such as intrinsic carrier concentration. Exercise 3.2 describes the formation of an electric field and space charge region in a p-n junction. Exercise 3.3 calculates penetration depth and absorption coefficient for different semiconductors. Exercise 3.4 determines optimal thickness and remaining reflection for anti-reflection coatings on solar cells.

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    1 Exe3 Sol

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    Tarak BENSLIMANE
    39 views2 pages
    This document provides solutions to exercises from Chapter 3 of a textbook on photovoltaics. Exercise 3.1 calculates parameters for charge carriers in semiconductors, such as intrinsic carrier concentration. Exercise 3.2 describes the formation of an electric field and space charge region in a p-n junction. Exercise 3.3 calculates penetration depth and absorption coefficient for different semiconductors. Exercise 3.4 determines optimal thickness and remaining reflection for anti-reflection coatings on solar cells.

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    This document provides solutions to exercises from Chapter 3 of a textbook on photovoltaics. Exercise 3.1 calculates parameters for charge carriers in semiconductors, such as intrinsic carrier concentration. Exercise 3.2 describes the formation of an electric field and space charge region in a p-n junction. Exercise 3.3 calculates penetration depth and absorption coefficient for different semiconductors. Exercise 3.4 determines optimal thickness and remaining reflection for anti-reflection coatings on solar cells.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    39 views2 pages

    1 Exe3 Sol

    Uploaded by

    Tarak BENSLIMANE
    This document provides solutions to exercises from Chapter 3 of a textbook on photovoltaics. Exercise 3.1 calculates parameters for charge carriers in semiconductors, such as intrinsic carrier concentration. Exercise 3.2 describes the formation of an electric field and space charge region in a p-n junction. Exercise 3.3 calculates penetration depth and absorption coefficient for different semiconductors. Exercise 3.4 determines optimal thickness and remaining reflection for anti-reflection coatings on solar cells.

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    Solutions to Chapter 3:

    Exercise 3.1: Charge Carriers in Semiconductors


    a) Insertion in Equation (3.3):
    ΔWG 1.12 eV
    − −
    2 ⋅8.63⋅10 5 eV/K ⋅ (273.15 K +100 K)
    ni = N 0 ⋅ e 2 ⋅ k ⋅T = 3 ⋅ 10 /cm ⋅ e
    19 3
    = 84 ⋅ 1010 /cm 3

    b) Reason for the diffusion current is a concentration gradient of charge carriers; the process is supported
    by the thermal lattice movement. Cause of the field current or drift current is an electrical field which
    accelerates the charged particles. A stronger lattice movement reduces the mobility of the carriers and
    therefore diminishes the field current.

    Exercise 3.2: p-n Junction


    a) Electrons diffuse due to the concentration gradient as a diffusion current from the n- into the p-doped
    region and leave behind in the n-region positively charged donator atoms. As soon as the electrons arrive
    in the p-region they fall into holes which results in the generation of fixed negative charges. Based on the
    space charges an electric field comes into existence which pushes the electrons as a field current back
    into the n-region. After a while a balance is built up between diffusion and field current and a space
    charge region is established in the p-n junction.
    b) See Figure 3.16.

    ΔWG k ⋅ t N02 ΔWG N02


    c) VD = − ⋅ ln = − VD ⋅ ln
    q q ND ⋅ NA q ND ⋅ NA
    (3 ⋅ 1019 /cm 3 ) 2
    = 1.12 V − 0.026 V ⋅ ln = 0.865 V
    5 ⋅ 1016 /cm 3 ⋅ 1018 /cm 3

    Exercise 3.3: Light Absorption in Semiconductors


    a) At a penetration depth x = xP the initial irradiance E1 is reduced to E1/e.
    Thus:
    ! 1
    E ( x = xP ) = E1 ⋅ e −α ⋅ x P = E1 / e = E1 ⋅ e −1 ⇒ − α ⋅ xP = −1 ⇒ xP =
    α
    b) With Equation (3.1) and (3.2):

    h ⋅ c0 6.6 ⋅ 10 −34 Ws 2 ⋅ 3 ⋅ 108 m/s 3.536 ⋅ 10-19 Ws ⋅ q


    WPh = = = 3.536 ⋅ 10-19 Ws = = 2.21 eV
    λ 560 ⋅ 10 m
    -9
    1.6 ⋅ 10-19 As

    c) Taken out of Figure 3.22:

    c-Si: α(WPh = 2.21 eV) = 6⋅103/cm ⇒ XP = 1/α = 1.67 µm

    a-Si: α(WPh = 2.21 eV) = 7⋅104/cm ⇒ XP = 1/α = 0.14 µm

    K. Mertens Textbook PV Solutions to Exercises


    Exercise 3.4: Anti-Reflection Films
    2
    n −n 
    2
     1 − 4.6 
    a) R =  1 2  =   = 0.413
     1
    n + n 2   1 + 4.6 

    Of the incident 500 W/m2 about 41.3 % are reflected, thus ER = 206.5 W/m2.

    b) Optimum refractive index: nS = n1 ⋅ n2 = 1 ⋅ 4.6 = 2.145 ;


    λ 600 nm
    Optimum film thickness: d = = = 69.9 nm ≈ 70 nm
    4 ⋅ nS 4 ⋅ 2.145

    λ 600 nm
    c) Film thickness: d = = = 75 nm
    4 ⋅ nS 4 ⋅ 2.0
    2 2
     n 2 −n ⋅n   2 2 − 1 ⋅ 4.6 
    Remaining reflection factor: R =  S 2 1 2  =  2  = 0.487 % ≈ 0.49 %

     n + n ⋅n  + ⋅
     S 1 2   2 1 4 .6 

    K. Mertens Textbook PV Solutions to Exercises

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