6 Transistor Characteristics
6 Transistor Characteristics
6 Transistor Characteristics
Objective:
To study the input and output characteristics of an NPN transistor in Common Emitter
mode and determine transistor parameters.
Overview:
A Bipolar Junction Transistor, or BJT is a three terminal device having two PN-
junctions connected together in series. Each terminal is given a name to identify it and
these are known as the Emitter (E), Base (B) and Collector (C). There are two basic types
of bipolar transistor construction, NPN and PNP, which basically describes the physical
arrangement of the P-type and N-type semiconductor materials from which they are
made. Bipolar Transistors are "CURRENT" Amplifying or current regulating devices that
control the amount of current flowing through them in proportion to the amount of
biasing current applied to their base terminal. The principle of operation of the two
transistor types NPN and PNP, is exactly the same the only difference being in the
biasing (base current) and the polarity of the power supply for each type.
PNP NPN
The symbols for both the NPN and PNP bipolar transistor are shown above along with
the direction of conventional current flow. The direction of the arrow in the symbol
shows current flow between the base and emitter terminal, pointing from the positive P-
type region to the negative N-type region, exactly the same as for the standard diode
symbol. For normal operation, the emitter-base junction is forward-biased and the
collector-base junction is reverse-biased.
Transistor Configurations
In a common emitter configuration, emitter is common to both input and output as shown
in its circuit diagram.
(1) Input Characteristics: The variation of the base current IB with the base-emitter
voltage VBE keeping the collector-emitter voltage VCE fixed, gives the input characteristic
in CE mode.
Input Dynamic Resistance (ri): This is defined as the ratio of change in base emitter
voltage (∆VBE) to the resulting change in base current (∆IB) at constant collector-emitter
voltage (VCE). This is dynamic and it can be seen from the input characteristic, its value
varies with the operating current in the transistor:
V BE
ri
I B VCE
The value of ri can be anything from a few hundreds to a few thousand ohms.
(2) Output Characteristics: The variation of the collector current IC with the collector-
emitter voltage VCE is called the output characteristic. The plot of IC versus VCE for
different fixed values of IB gives one output characteristic. Since the collector current
changes with the base current, there will be different output characteristics corresponding
to different values of IB.
Output Dynamic Resistance (ro): This is defined as the ratio of change in collector-
emitter voltage (∆VCE) to the change in collector current (∆IC) at a constant base current
IB.
VCE
ro
I C IB
The high magnitude of the output resistance (of the order of 100 kW) is due to the
reverse-biased state of this diode.
(3) Transfer Characteristics: The transfer characteristics are plotted between the input
and output currents (IB versus IC). Both IB and IC increase proportionately.
Current amplification factor (β)
This is defined as the ratio of the change in collector current to the change in base current
at a constant collector-emitter voltage (VCE) when the transistor is in active state.
I C
ac
I B VCE
This is also known as small signal current gain and its value is very large. The ratio of IC
and IB we get what is called βdc of the transistor. Hence,
IC
dc
IB VCE
Since IC increases with IB almost linearly, the values of both βdc and βac are nearly equal.
Circuit components/Equipments:
(i) Transistor (BC 107 or equivalent), (ii) Resistors (2 Nos.) (iii) Multimeters (3 Nos.),
(iv) D.C. power supply, (v) Connecting wires and (vi) Breadboard.
Circuit Diagrams:
Procedure:
Observations:
Transistor code: ________, RB = _____, RC = ________.
1
2
3
4
5
Graphs:
Plot the input, output and transfer characteristics for each configuration.
(1)Input characteristics: Plot VBE ~ IB, for different VCE and determine the input dynamic
resistance in each case at suitable operating points.
(2)Output characteristics: Plot VCE ~ IC, for different IB and determine the output
dynamic resistance in each case at suitable operating points in the active region.
(3)Transfer characteristics: Plot IB ~ IC, for a fixed VCE and determine βac.
Results/Discussions:
Precautions:
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