Chapter 6:

Field-Effect Transistors
 6.1 Introduction of FET
FETs (Field-Effect Transistors) are much like BJTs (Bipolar Junction
Transistors).

Similarities:
• Amplifiers
• Switching devices
• Impedance matching circuits

Differences:
• FETs are voltage controlled devices whereas BJTs are current
controlled devices.
• FETs also have a higher input impedance, but BJTs have higher
gains.
• FETs are less sensitive to temperature variations and because of
their construction they are more easily integrated on ICs.
 FET Types

n-channel
•JFET–– Junction Field-Effect Transistor
p-channel

•MOSFET –– Metal-Oxide Semiconductor Field-Effect Transistor

n-channel
D-MOSFET –– Depletion MOSFET
p-channel

n-channel
E-MOSFET –– Enhancement MOSFET
p-channel

•MESFET –– Metal-Semiconductor Field-Effect Transistor

 6.2 JFET Construction

There are two types of JFETs

•n-channel
•p-channel

The n-channel is more widely

used.
There are three terminals.

•Drain (D) and source (S) are connected to

the n-channel
•Gate (G) is connected to the p-type material

JFET symbols: (a) n-channel; (b) p-channel.

 JFET Operating Characteristics
VGS = 0, VDS increasing to some positive value
When VGS = 0 and VDS is increased from 0 to a more positive voltage
• The depletion region between p-gate and n-channel increases.
• Increasing the depletion region, decreases the size of the n-channel
which increases the resistance of the n-channel.
• Even though the n-channel resistance is increasing, the current (ID)
from source to drain through the n-channel is increasing. This is
because VDS is increasing.
•If VDS is further increased to a more positive voltage, then the
depletion zone gets so large that it pinches off the n-channel.
•VDS establishes the pinch-off is denoted as pinch off voltage:
Vp.
•Any further increase in V D S >V P does not produce any
increase in I D . I D is at saturation or maximum referred to as
IDSS.
•The ohmic value of the channel is maximum.
 JFET Operating Characteristics
VGS < 0, VDS at some positive value: ID < IDSS
As VGS becomes more negative:
• the depletion region increases.
• The JFET experiences pinch-off at a lower voltage (Vp).
• ID decreases (ID < IDSS) even though VDS is increased.
• Eventually ID reaches 0A. VGS at this point is called Vp or VGS(off).

Also note that at high levels of VDS the JFET reaches a breakdown situation. ID increases uncontrollably if VDS > VDSmax.
 JFET Operating Characteristics
VGS < 0, VDS at some positive value: ID < IDSS
As VGS becomes more negative:
• the depletion region increases.
• The JFET experiences pinch-off at a lower voltage (Vp).
• ID decreases (ID < IDSS) even though VDS is increased.
• Eventually ID reaches 0A. VGS at this point is called Vp or VGS(off).

For linear
amplification

Also note that at high levels of VDS the JFET reaches a breakdown situation. ID increases uncontrollably if VDS > VDSmax.
 p-Channel JFETS
The p-channel JFET behaves the same as the n-channel JFET, except the
polarities and currents are reversed.

Also note that at high levels of VDS the

JFET reaches a breakdown situation—ID
increases uncontrollably if VDS > VDSmax.
Summary
A few that will surface frequently in the analysis to follow in this chapter and the next for n –channel JFETs include the
following:
The maximum current is defined as IDSS and occurs when VGS=0V and VDS>= |VP |, as shown in Fig. 6.15a .
For gate-to-source voltages VGS is less than (more negative than) the pinch-off level, the drain current is 0A ( ID=0 A ),
as in Fig. 6.15b .
For all levels of VGS between 0V and the pinch-off level, the current ID will range between IDSS and 0 A, respectively, as
in Fig. 6.15c .
A similar list can be developed for p-channel JFETs.

FIG. 6.15
 6.3 JFET Transfer Characteristics
The transfer characteristic of input-to-output is not as straightforward in a JFET as it is in a BJT.
In a BJT,  indicates the relationship between IB (input) and IC (output).
In a JFET, the relationship of VGS (input) and ID (output) is a little more complicated:

IDSS and Vp (VGS(off) ) values can be found in a specification sheet

JFET Transfer Curve:

This graph shows the value of ID
for a given value of VGS.
• Applying Shockley’s equation
(shorthand method)
• from the output characteristics
11
Applying Shockley’s Equation
EXAMPLE 6.1 Sketch the transfer curve defined by IDSS=12 mA and VP=-6 V.
EXAMPLE 6.2 Sketch the transfer curve for a p-channel device with IDSS=4 mA and VP=3 V.
6.5 Important Relationship
 6.6 MOSFETs
MOSFETs (metal–oxide–semiconductor field-effect transistor) have
characteristics similar to JFETs and additional characteristics that make
then very useful.
There are two types of MOSFETs:

• Depletion-Type
• Enhancement-Type
 Depletion-Type MOSFET Construction
The drain (D) and source (S) connect to the to n-doped
regions. These n-doped regions are connected via an n-
channel. This n-channel is connected to the gate (G) via a
thin insulating layer of SiO2.
There is no direct electrical connection between the gate
terminal and the channel of a MOSFET.
It is the insulating layer of SiO2 in the MOSFET construction
that accounts for the very desirable high input impedance of
the device.
The n-doped material lies on a p-doped substrate that may
have an additional terminal connection called substrate (SS).
 Depletion-Type MOSFET Construction
In fact, the input resistance of a MOSFET is usually
more than that of a typical JFET, even though the input
impedance of most JFETs is sufficiently high for most
applications. Because of the very high input impedance,
the gate current I G is essentially 0A for dc biased
configurations.

The reason for the label metal–oxide–semiconductor

FET is now fairly obvious: metal for the drain, source,
and gate connections; oxide for the silicon dioxide
insulating layer; and semiconductor for the basic
structure on which the n- and p-type regions are
diffused. The insulating layer between the gate and the
channel has resulted in another name for the device:
insulated-gate FET, or IGFET , although this label is
used less and less in the literature.
 Basic Depletion-Type MOSFET Operation
A depletion-type MOSFET can operate in two modes:
• Depletion mode
• Enhancement mode
Depletion Mode
The characteristics are similar to a JFET.
• When VGS = 0V, ID = IDSS
• When VGS < 0V, ID < IDSS
• The formula used to plot the transfer curve still
applies:

Enhancement Mode
• VGS > 0V
• ID increases above IDSS
• The formula used to plot the
transfer curve still applies:

Note that VGS is now a positive polarity

EXAMPLE 6.3 Sketch the transfer characteristics for an n –channel depletion-type MOSFET with
IDSS =10 mA and VP=-4 V.
p-Channel Depletion-Type MOSFET
 6.7 Enhancement-Type MOSFET
Construction
• The drain (D) and source (S) connect to
the to n-doped regions. These n-doped
regions are connected via an n-channel

• The gate (G) connects to the p-doped

substrate via a thin insulating layer of
SiO2

• There is no channel

• The n-doped material lies on a p-doped

substrate that may have an additional
terminal connection called the substrate
(SS)
 Basic Operation of the Enhancement-Type
MOSFET
The enhancement-type MOSFET only operates in the enhancement mode.
• VGS is always positive to form an n-channel. VGS resulting in the significant increase
in drain current is called the threshold voltage VT (or VGS(Th) )
• As VGS increases, ID increases
• As VGS is kept constant and VDS is increased, then ID saturates (IDSS) due to pinch-off
process. And the saturation level, VDSsat is reached
 Enhancement-Type MOSFET Transfer
Curve
To determine ID given VGS:

Where:
VT = threshold voltage or
voltage at which the MOSFET
turns on

k = constant found in the

specification sheet
EXAMPLE 6.4 Using the data provided on the specification sheet of Fig. 6.40 and an average
threshold voltage of VGS(Th)=3 V, determine:
a. The resulting value of k for the MOSFET. b. The transfer characteristics.
Solution: a.

b.

For VGS=8, 10, 12, and 14V, ID will be 1.525, 3 (as defined), 4.94, and 7.38 mA, respectively.
 p-Channel Enhancement-Type MOSFETs

The p-channel enhancement-type MOSFET is similar to the n-channel, except

that the voltage polarities and current directions are reversed.
 6.8 CMOS Devices

CMOS (complementary MOSFET) uses a

p-channel and n-channel MOSFET on the
same substrate.

Advantages

• Useful in logic circuit designs

• Higher input impedance
• Faster switching speeds
• Lower operating power levels

27
Summary
For all FETs:

For JFETs and depletion-type MOSFETs:

For enhancement-type MOSFETs:

JFETs differ from BJTs

• Nonlinear relationship between

input (VGS) and output (ID)
• FETs are voltage controlled
devices whereas BJTs are current
controlled devices.
• FETs have a higher input
impedance.
• FETs are less sensitive to
Important Conclusions and Concepts
1. A current-controlled device is one in which a current defines the operating conditions of the device,
whereas a voltage-controlled device is one in which a particular voltage defines the operating conditions.
2. The JFET can actually be used as a voltage-controlled resistor because of a unique sensitivity of the
drain-to-source impedance to the gate-to-source voltage.
3. The maximum current for any JFET is labeled IDSS and occurs when VGS = 0 V.
4. The minimum current for a JFET occurs at pinch-off defined by VGS = VP.
5. The relationship between the drain current and the gate-to-source voltage of a JFET is a nonlinear one
defined by Shockley’s equation. As the current level approaches IDSS , the sensitivity of ID to changes in VGS
increases significantly.
6. The transfer characteristics ( ID versus VGS ) are characteristics of the device itself and are not sensitive to
the network in which the JFET is employed.
7. When VGS = VP / 2, ID = IDSS / 4; and at a point where ID = IDSS / 2, VGS ≈0.3 V.
8. Maximum operating conditions are determined by the product of the drain-to-source voltage and the drain
current.
9. MOSFETs are available in one of two types: depletion and enhancement .
10. The depletion-type MOSFET has the same transfer characteristics as a JFET for drain currents up to the
IDSS level. At this point the characteristics of a depletion-type MOSFET continue to levels above IDSS ,
whereas those of the JFET will end.
11. The arrow in the symbol of n -channel JFETs or MOSFETs will always point in to the center of the
symbol , whereas those of a p -channel device will always point out of the center of the symbol.
12. The transfer characteristics of an enhancement-type MOSFET are not defined by Shockley’s equation
but rather by a nonlinear equation controlled by the gate-to-source voltage, the threshold voltage, and a
constant k defined by the device employed. The resulting plot of ID versus VGS rises exponentially with
increasing values of VGS .
13. Always handle MOSFETs with additional care due to the static electricity that exists in places we
might least suspect. Do not remove any shorting mechanism between the leads of the device until it is
installed.
14. A CMOS (complementary MOSFET) device employs a unique combination of a p-channel and an n-
channel MOSFET with a single set of external leads. It has the advantages of a very high input impedance,
fast switching speeds, and low operating power levels, all of which make it very useful in logic circuits.
15. A depletion-type MESFET includes a metal–semiconductor junction, resulting in characteristics that
match those of an n-channel depletion-type JFET. Enhancement type MESFETs have the same
characteristics as enhancement-type MOSFETs. The result of this similarity is that the same type of dc and
ac analysis techniques can be applied to MESFETs as was applied to JFETs .