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ST13005

High voltage fast-switching NPN power transistor

Datasheet − production data

Features
■ Low spread of dynamic parameters
■ Minimum lot-to-lot spread for reliable operation
■ Very high switching speed

Applications
3
■ Electronic ballast for fluorescent lighting 2
1
■ Switch mode power supplies TO-220

Description
This device is manufactured using high voltage
multi epitaxial planar technology for high switching Figure 1. Internal schematic diagram
speeds and high voltage capability. It uses a
cellular emitter structure with planar edge
termination to enhance switching speeds while
maintaining a wide RBSOA.

Table 1. Device summary


Order code Marking(1) Package Packaging

13005 A
13005 C
ST13005 13005 D TO-220 Tube
13005 E
13005 F
1. Product is pre-selected in DC current gain (group A, C, D, E and F). STMicroelectronics reserves the right to ship either
groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.

May 2012 Doc ID 5262 Rev 10 1/12


This is information on a product in full production. www.st.com 12
Contents ST13005

Contents

1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.2 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

3 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11

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ST13005 Electrical ratings

1 Electrical ratings

Table 2. Absolute maximum ratings


Symbol Parameter Value Unit

VCES Collector-emitter voltage (VBE = 0) 700 V


VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Emitter-base voltage (IC = 0) 9 V
IC Collector current 4 A
ICM Collector peak current (tP < 5 ms) 8 A
IB Base current 2 A
IBM Base peak current (tP < 5 ms) 4 A
PTOT Total dissipation at Tc ≤25 °C 75 W
TSTG Storage temperature - 65 to 150 °C
TJ Max. operating junction temperature 150 °C

Table 3. Thermal data


Symbol Parameter Value Unit

Rthj-case Thermal resistance junction-case max 1.7 °C/W


Rthj-amb Thermal resistance junction-amb max 62.5 °C/W

Doc ID 5262 Rev 10 3/12


Electrical characteristics ST13005

2 Electrical characteristics

Tcase = 25 °C unless otherwise specified.

Table 4. Electrical characteristics


Symbol Parameter Test conditions Min. Typ. Max. Unit

Collector cut-off current VCE = 700 V 1 mA


ICES
(VBE = 0) VCE = 700 V TC=125 °C 5 mA
Emitter cut-off current
IEBO VEB= 9 V 1 mA
(IC = 0)
Collector-emitter
VCEO(sus) (1) I =10 mA 400 V
sustaining voltage (IB = 0) C
IC = 1 A _ IB = 0.2 A 0.5 V
Collector-emitter
VCE(sat) (1) IC = 2 A IB = 0.5 A 0.6 V
saturation voltage
IC = 4 A __ IB = 1 A 1 V

Base-emitter saturation IC = 1 A _ _IB = 0.2 A 1.2 V


VBE(sat) (1)
voltage IC = 2 A _ IB = 0.5 A 1.6 V
IC = 1 A VCE = 5 V
Group A 15 32
Group C 16 22
hFE (1)(2) DC current gain Group D 21 27
Group E 26 32
Group F 31 37
IC = 2 A VCE = 5 V 8 40
Resistive load IC = 2 A VCC = 125 A
ts Storage time IB1= - IB2=0.4 A 1.5 3 µs
tf Fall time tp = 30 µs 0.2 µs
1. Pulse test: pulse duration = 300 µs, duty cycle ≤2 %.
2. Product is pre-selected in DC current gain (group A, C, D, E and F). STMicroelectronics reserves the right
to ship either groups according to production availability. Please contact your nearest STMicroelectronics
sales office for delivery details

4/12 Doc ID 5262 Rev 10


ST13005 Electrical characteristics

2.1 Electrical characteristics (curves)

Figure 2. Safe operating area Figure 3. Derating curve

Figure 4. DC current gain (VCE = 1.5 V) Figure 5. DC current gain (VCE = 5 V)

Figure 6. Collector-emitter saturation Figure 7. Base-emitter saturation


voltage voltage

Doc ID 5262 Rev 10 5/12


Electrical characteristics ST13005

Figure 8. Inductive load fall time Figure 9. Inductive load storage time

Figure 10. Resistive load fall time Figure 11. Resistive load storage time

Figure 12. Reverse biased safe


operating area

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ST13005 Electrical characteristics

2.2 Test circuits


Figure 13. Inductive load switching test circuit

1) Fast electronic switch


2) Non-inductive resistor
3) Fast recovery rectifier

Figure 14. Resistive load switching test circuit

1) Fast electronic switch


2) Non-inductive resistor

Doc ID 5262 Rev 10 7/12


Package mechanical data ST13005

3 Package mechanical data

In order to meet environmental requirements, ST offers these devices in different grades of


ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.

8/12 Doc ID 5262 Rev 10


ST13005 Package mechanical data

Table 5. TO-220 type A mechanical data


mm.
Dim.
Min. Typ. Max.

A 4.40 4.60
b 0.61 0.88
b1 1.14 1.70
c 0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e 2.40 2.70
e1 4.95 5.15
F 1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L 13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅P 3.75 3.85
Q 2.65 2.95

Doc ID 5262 Rev 10 9/12


Package mechanical data ST13005

Figure 15. TO-220 type A drawing

0015988_typeA_Rev_S

10/12 Doc ID 5262 Rev 10


ST13005 Revision history

4 Revision history

Table 6. Document revision history


Date Revision Changes

21-Jun-2004 6
22-Aug-2007 7 Updated mechanical data according to PCN APM-PWR/07/2804
12-Oct-2007 8 Updated marking in Table 1
– Updated marking in Table 1
– Inserted: Table 3
15-Feb-2012 9
– Modified: hFE in Table 4
– Updated mechanical data
15-May-2012 10 Updated marking in Table 1 and 4

Doc ID 5262 Rev 10 11/12


ST13005

Please Read Carefully:

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12/12 Doc ID 5262 Rev 10

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