DL 290

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USN lOELN15/25
Time: 3 hrs. Max. Mark~: 100

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Note: Answer any FIVE full questions,
~ selecting at least two from each part.
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a
~ PART-A
"0
Q)
~ 1
.~ a. Choose the correct answers for the following: (04 Marks)
</i Q)
~,.D
"'-
i) The reversesaturationcurrentof germaniumdiodeat .f5.~Chis
0..:-:::
..:.: ~ A) 100 nA B) 0.7A C) O'~h~ D) l/lA
s::: .
",0
;:c'r> ii) For every 1°C rise in temperature, the silicon diode fotward voltage drop decreased by
on II A) 2 mV/oC B) 2.02 mV/oC C);.!"SnV/oC D) O.l/lV/oC
.500
s:::N+
.-
"'~ iii) The DC output voltage of a bridge rectifjt1fqaving a total secondary peak voltage of
a
~ oL
Q)
100 V is .. volts
.; 5 A) 63.6 V B) 31.8 V C) 90 V D) 70.7 V

§ .~ iv) Ideal value of voltage regulator (Qrthe power supply is-
</i
Q) </i
s::: 0
.- ::
A) minimum B) maX!UIV!J'J C) unit D) zero
- .-
b. With circuit and waveform, expl'!in.tije working principle of a full wave bridge rectifier and
g;'@
2
u Q)
0" derive an expression for averageag,d RMS value of current. (10Marks)
- ...
§-2 c. Design a zener diode voItagefto'meet the following specification.
0"0
ons:::
.~ '"
Unregulated DC input vo~tf\g~Vi= 10 V:t 20 V
"0 ...
~B Regulated DC output v~lt~geV0 = 5 V

"0
2
'" '"
'" Minimum zener curr~Iitbmin= 5 mA

->.> Q)
Maximum zenercp,rtent hmax= 80 mA.
'C 0
0 ....
$0-
= '"
Load current It.="20mA. (06 Marks)
0..Q)
a §:
0 '"
u .
. s:::
~ .g 2
Q)
~ 13
.....
a. Chopsethe correct answers for the following: (04 Marks)

'" .- Ina properly biased PNP transistor, some of the holes from the emitters
</it;::
s:::
.....
i)
...
=~s:::
0 .- A) recombine with electron in the base B) recombine in the emitter it self
>.<+-
onO C) pass through the base to the collector D) are stopped by the junction barrier
.,5 ~
Q) .- ii) The current amplification factor adc is given by
]-] A) Ic/is B) IdlE C) IsllE D)Is/Ic
8~ iii) The output resistance of transistor CB configuration is
8..~.
-N A) I KQ B) 0 Q C) M Q D) 100 Q
Q) iv) The following relationship between a and p are correct EXCEPT
0 A) P = al 1- a B) a = pll - P C) a = p II + p D) 1 - a = 1/1 + p.
Z
E
'"
b. With circuit and characteristic curve, explain the input and output characteristic curve of
t:
0
a.
transistor CE configuration. (12Marks)
.§ c. The reverse leakage current of the transistor when connected in CB configuration is 0.1 /lA.
While it is 16 /lA when it is in CE configuration calculate aDCand PDC. (04Marks)
10f2
lOELN }.
3 a. Choose the correct answers for the following: (04 Mark.

i) Theoperatingpoint is on the -
A) output characteristic curve B) on the DC load line
C) transfer characteristic curve D) input characteristic curve
ii) The maximum peak to peak output voltage swing is obtained when the Q point of circuit
is located
A) near saturation point B) near cutoff point
C) at the centre of the DC load line D) at least on the load line
iii) The morestableoperatingpoint fortransistoris obtainedfromthe - biasing
A) fixed bias circuit B) voltage divider bias circuit
C) collector to base bias D) reverse bias
iv) In a transistortemperaturesensitiveparameterare .
A) Vee and IB B) VEEand IE C) Vee and Ie ~),~BE and leBo.

b. Write the circuit diagram for :i) voltage divider bias circuit ii) fixed biaBiwc,ircuit.(10Marks)
c. For the circuit shown in Fig. Q3(C). Find the range of operating poj,ntWw)len hFE(min)= 50,
hFE(m,,' ~ 200. Assume Si transistor. ~ I. v (06 Mark')
L:t>'
Fig. Q3(c) ~,
4 a. Choose the correct answers for the following' (04 Marks)
i) In an SCR, the function ofthe gate is to
A) to contrdl the SCR current turn on the SCR
C) turn OFF the SCR D) reduce the reverse break down voltage
ii) The unijunction transistor has
A) anode, cathode and gate' B) two base and one emitter
C) two anodeand one gat~" D) anode cathode and two gates
iii) A UJTused as a. p', '
A) amplifier .e,felaxation oscillatorC) rectifier D) inverter
iv) A FET consists
A) source B) drain C) gate D) all of the above.
b. Sketch a 90° plicontrol circuit for an SCR and draw the load waveform. Explain the
operation of the CITcuit. (08Marks)
c. Draw and e~plainthe typical drain characteristic of anN-channel JFET with Vgs= O.(08Marks)
PART-B
5 a. Clioose the correct answers for the following: (04Marks)
i) In an amplifier frequency response curve, the gain of the amplifier at half power point is
A) 0.707 of maximum value of gain B) 1.41 of maximum value of gain
C) 1.11 of maximum value of gain D) 3.14 of maximum value of gain
ii) Band width of an amplifier is the range of frequency over which the gain is -
A) gain is maximum B) gain is one C) gain is zero D) gain constant
iii) The electrical component oftank circuit are
A) R,C B) R, L C) R, C, L D)L, C
iv) For sustaining oscillations in an oscillator circuit
A) feedback factor should be unity B) phase shift should be 0°
C) feedback should be negative D) both A and B.
b. With a circuit diagram, explain the significance of each component ofRC coupled amplifier.
(06 Marks)
c. With a circuit diagram, explain the operation of a Hartley oscillator. (06 Marks)
d. In a colPitts oscillator, C, = 100 pF and Cz = 60 pF. Find the value ofL, if the frequency of
oscillation is 40 KHz. (04 Marks)
20f3
lOELNl/25
6 a. Choose the correct answers for the following: (04 Marks)
i) Voltage gain of an voltage follower is
A) 0 B) 00 C) 1 D) 105
ii) The meaning of infmite band width of an op-Amp is
A) it allows the signal with 50 Hz frequency
B) it allows all the frequency from 0 to 00Hz
C) it allows the signal with OHzfrequency
D) it allows the signal with frequency ooHz.
iii) The ideal characteristic of an op-Amp are
A) Rj = 00, Ro= 0, Av= 00,CMRR = 00
B) Rj = 0, Ro = 00,Av = 0, CMRR = 0
C) Rj = 0, Ro= 0, Av= 1, CMRR = 00
D) Rj = 00, Ro= 1, Av= 0, CMRR = 00.
iv) In a non-inverting amplifier circuit, RF = 360 K, RI = 120 K. T4~igajn ofthe amplifier is
A) 100 B) 1000 C) 4 D) 2.
b. Explain how an op-Amp can be used as a inverting summer. (08 Marks)
c. A 10 mV, 5 KHz sinusoidal signal is applied to input of anop-Amp integrator circuit for
which R = 100 K, C = 1 ~F. Find the output voltage. (08 Marks)
7 a. Choose the correct answers for the following: (04Marks)

i) A 400W carrier is modulated to a depth of 70%. The total power in a modulated wave is
A) 600 W B) 500 W C) 498 W D) 0.5 W
ii) The BCD equivalent decimal 14 is
A) 00101010 B) 00010100 C) 10010101 D) 01000001
iii) The 15's complement of(ABC)J6 is
A) CAB B) CDA C) 543 D)ACB
iv) The binary number of (0.5(J)IO.js
A) 0.01010 ~).O.1O1O1 C) 1.011 D) 0.10001
b. Derive an expression for output power of an AM transmitter. (06Marks)
c. Perform the following:
i) (ABC)16+ (ABCDE)16= (?)16
ii) Using l's co~ptl;:ment (1101O)z - (l0000)z = (?)z. (06 Marks)
d. Perform the following:
i) (6751.53)8:::::(?)IO
ii) (A51.3A)16 = (?)z. (04 Marks)
8 a. Choose the correct answers for the following: (04 Marks)

i) The Boolean expression x + yz is equal to
A) x + y + Z B)(x + y)(x + z) C) (x + y)z D) (x + z)y
ii) The Boolean expression A- + AB is equal to -
A) B B) A C) 1+ B D)O
iii) In EX-OR gate, if the inputs are logically same then the output is
A) 1 B) A C) B D)O
iv) The universal gates are
A) AND and OR B) NOT andNOR C) NAND andNOR D) EX-ORandEX-NOR.
b. Simplify the Boolean expression:
y = AB + A(B + C) +B(B + C). (04 Marks)
-
c. Implement y:::::ABCD using, two input NOR gates. (06 Marks)
d. Explain the operation of Fulladder and implement it using gates. (06Marks)

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Time: 3 hrs. Max. Mark~: 100

.; 5 A) 63.6 V B) 31.8 V C) 90 V D) 70.7 V

~B Regulated DC output v~lt~geV0 = 5 V

'" Minimum zener curr~Iitbmin= 5 mA

a. Chopsethe correct answers for the following: (04 Marks)

3 a. Choose the correct answers for the following: (04 Mark.

A) Vee and IB B) VEEand IE C) Vee and Ie ~),~BE and leBo.

hFE(m,,' ~ 200. Assume Si transistor. ~ I. v (06 Mark')

7 a. Choose the correct answers for the following: (04Marks)

8 a. Choose the correct answers for the following: (04 Marks)

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