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    Remplazo Transistor M6

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    cesar david chavez
    This document provides specifications for a PNP epitaxial planar transistor (part number 2SA812K). Key specifications include: 1) It is complementary to part 2SC1623K. 2) It has a typical high DC current gain of 200 and can withstand collector-emitter voltages up to -50V. 3) It comes in a small SOT-23 package and has absolute maximum ratings for collector current of -100mA and total power dissipation of 200mW.

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    Remplazo Transistor M6

    Uploaded by

    cesar david chavez
    7 views2 pages
    This document provides specifications for a PNP epitaxial planar transistor (part number 2SA812K). Key specifications include: 1) It is complementary to part 2SC1623K. 2) It has a typical high DC current gain of 200 and can withstand collector-emitter voltages up to -50V. 3) It comes in a small SOT-23 package and has absolute maximum ratings for collector current of -100mA and total power dissipation of 200mW.

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    Original Title

    REMPLAZO TRANSISTOR M6

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    This document provides specifications for a PNP epitaxial planar transistor (part number 2SA812K). Key specifications include: 1) It is complementary to part 2SC1623K. 2) It has a typical high DC current gain of 200 and can withstand collector-emitter voltages up to -50V. 3) It comes in a small SOT-23 package and has absolute maximum ratings for collector current of -100mA and total power dissipation of 200mW.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    7 views2 pages

    Remplazo Transistor M6

    Uploaded by

    cesar david chavez
    This document provides specifications for a PNP epitaxial planar transistor (part number 2SA812K). Key specifications include: 1) It is complementary to part 2SC1623K. 2) It has a typical high DC current gain of 200 and can withstand collector-emitter voltages up to -50V. 3) It comes in a small SOT-23 package and has absolute maximum ratings for collector current of -100mA and total power dissipation of 200mW.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    2SA812K

    -50 V, -100 mA
    Elektronische Bauelemente PNP Epitaxial Planar Transistor

    RoHS Compliant Product


    A suffix of “-C” specifies halogen and lead free

    FEATURES
    z Complementary to 2SC1623K
    z High DC Current Gain: hFE = 200 TYP. (VCE = -6V, IC = -1mA)
    z High Voltage: VCEO = -50V

    PACKAGE DIMENSIONS
    SOT-23
    3 Collector
    Dim Min Max
    1 A 2.800 3.040
    Base B 1.200 1.400
    2
    Emitter
    C 0.890 1.110
    D 0.370 0.500
    G 1.780 2.040
    A
    L H 0.013 0.100
    J J 0.085 0.177
    3
    K
    K 0.450 0.600
    Top View B S
    1 2 L 0.890 1.020
    C
    S 2.100 2.500
    V G H
    D V 0.450 0.600
    All Dimension in mm

    ABSOLUTE MAXIMUM
    RATINGS at Ta = 25°C
    Parameter Symbol Ratings Unit
    Collector to Base Voltage VCBO -60 V
    Collector to Emitter Voltage VCEO -50 V
    Emitter to Base Voltage VEBO -5 V
    Collector Currrent IC -100 mA
    Total Power Dissipation Pc 200 mW
    Junction, Storage Temperature TJ, TSTG +150, -55 ~ +150 ℃

    CHARACTERISTICS at Ta = 25°C
    Symbol Min. Typ. Max. Unit Test Conditions
    BVCBO -60 - - V IC=-100uA
    BVCEO -50 - - V IC=-1mA
    BVEBO -5 - - V IE=-100uA
    ICBO - - -100 nA VCB=-60V
    IEBO - - -100 nA VEB=-5V
    *VCE(sat) - - 300 mV IC=100mA, IB=10mA
    VBE -0.58 - -0.68 V IC = -1mA, VCE = -6V
    hFE 90 - 600 VCE=-6V, IC=-1mA
    fT - 180 - MHz VCE=-6V, IC=-10mA
    Cob - 4.5 - pF VCB = -10V, f = 1 MHz

    CLASSIFICATION OF hFE
    Rank P Y G B
    Range 90 - 180 135 - 270 200 - 400 300 - 600
    Marking M4 M5 M6 M7

    01-June-2002 Rev. A Page 1 of 2


    2SA812K
    -50 V, -100 mA
    Elektronische Bauelemente PNP Epitaxial Planar Transistor

    CHARACTERISTIC CURVES

    01-June-2002 Rev. A Page 2 of 2

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