SEMICONDUCTOR 2N7000

N CHANNEL ENHANCEMENT MODE

TECHNICAL DATA FIELD EFFECT TRANSISTOR

INTERFACE AND SWITCHING APPLICATION.

FEATURES B C

High density cell design for low RDS(ON).

Voltage controlled small signal switch.

A
Rugged and reliable.
High saturation current capablity. N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
D C 3.70 MAX

J
D 0.45
E 1.00
F 1.27
MAXIMUM RATING (Ta=25 ) G 0.85
H 0.45
_ 0.50
CHARACTERISTIC SYMBOL RATING UNIT H J 14.00 +
F F K 0.55 MAX
L 2.30
Drain-Source Voltage VDSS 60 V M 0.45 MAX
N 1.00
Gate-Source Voltage VGSS 20 V

C
1 2 3

M
Continuous ID 500 1. SOURCE
Drain Current mA 2. GATE
Pulsed(Note 1) IDP 2000 3. DRAIN

Drain Power Dissipation PD 625 mW

Junction Temperature Tj 150 TO-92
Storage Temperature Range Tstg -55 150

Note 1) Pulse Width 10 , Duty Cycle 1%

EQUIVALENT CIRCUIT

PLEASE HANDLE WITH CAUTION.

THIS TRANSISTOR IS ELECTROSTATIC SENSITIVE DEVICE.

ELECTRICAL CHARACTERISTICS (Ta=25 )

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=10 A 60 - - V
Zero Gate Voltage Drain Current IDSS VDS=60V, VGS=0V - - 1 A
Gate-Body Leakage, Forward IGSSF VGS=20V, VDS=0V - - 100 nA
Gate-Body Leakage, Reverse IGSSR VGS=-20V, VDS=0V - - -100 nA

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 2N7000

ELECTRICAL CHARACTERISTICS (Ta=25 )

ON CHARACTERISTICS (Note2)
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 1.1 1.8 2.3 V
VGS=10V, ID=500mA - 1.2 1.8
Drain-Source ON Resistance RDS(ON)
VGS=5V, ID=50mA - 1.5 2.1
VGS=10V, ID=500mA - 0.6 0.9
Drain-Source ON Voltage VDS(ON) V
VGS=5V, ID=50mA - 0.075 0.105
On State Drain Current ID(ON) VGS=10V, VDS= 2 VDS(ON) 500 - - mA
Forward Transconductance gFS VDS=10V, ID=500mA 200 580 - mS
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=200mA (Note1) - 0.78 1.15 V
(Note 2) Pulse Test : Pulse Width 80 , Duty Cycle 1%

DYNAMIC CHARACTERISTICS
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Input Capacitance Ciss - 47.1 -
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1MHz - 3.5 - pF
Output Capacitance Coss - 8.8 -
Turn-On Time ton VDD=30V, RL=155 , ID=190mA, - 8.8 -
Switching Time nS
Turn-Off Time toff VGS=10V - 14.8 -

SWITCHING TIME TEST CIRCUIT

V DD
t on t off
t d(on) tr t d(off) tf
RL 90% 90%

V IN D V OUT OUTPUT, V OUT 10% 10%

INVERTED
V GS
90%
G DUT
INPUT, V IN
50% 50%
10%
S
PULSE WIDTH

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 2N7000

I D - V DS R DS(ON) - I D

DRAIN SOURCE ON- RESISTANCER

1.5 6
V 6V 5V
COMMON SOURCE 10 VGS=3V
Ta=25 C
DRAIN CURRENT ID (A)

5
1.2

RDS(ON) (Ω)
0.9
4V
3
0.6 4V
2 10V 6V 5V
0.3 VGS =3V 1
COMMON SOURCE
Ta=25 C
0 0
0 1 2 3 4 5 0.1 0.2 0.3 0.4 0.5 0.6

DRAIN-SOURCE VOLTAGE V DS (V) DRAIN CURRENT I D (A)

R DS(ON) - T j ID - VGS
DRAIN SOURCE ON- RESISTANCE RDS (Ω)

5 0.9
COMMON SOURCE
VGS =10V
DRAIN CURRENT I D (A)

0.6
3

125 C
2 VGS =5V -55 C
ID =50mA 0.3

1 25 C
VGS =10V
ID =500mA
0 0.0
-100 -50 0 50 100 150 0 1 2 3 4 5

JUNCTION TEMPERATURE T j ( C) GATE-SOURCE VOLTAGE VGS (V)

V th - T j I S - V SD
SOURCE THRESHOLD VOLTAGE Vth (V)

1.4 1
REVERSE DRAIN CURRENT I S (A)

COMMON SOURCE
VDS=VGS
ID =250µA
NORMALIZED GATE

1.2

VGS =10 VGS =0

1 0.1

0.8

0.6 0.01
-100 -50 0 50 100 150 0.0 0.3 0.6 0.9 1.2 1.5

JUNCTION TEMPERATURE T j ( C) BODY DIODE FORWARD VOLTAGE VSD (V)

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 2N7000

C - V DS VGS - Q g
1000 10

GATE-SOURCE VOLTAGE VGS (V)

COMMON SOURCE COMMON SOURCE
VGS=0 VGS=30V
f=1MHz ID= 0.3A
CAPACITANCE C (pF)

Ta=25 C 8
Ta =25 C
100 Ciss
6

Coss 4
10
Crss
2

1 0
0 5 10 15 20 25 0 2 4 6 8 10

DRAIN-SOURCE VOLTAGE V DS (V) GATE CHARGE Q g (nC)

SOA P D - Ta
DRAIN POWER DISSIPATION P D (mW)

10 700
Tj=150 C , Ta=25 C ,Single Pulse
PW 10
600
DRAIN CURRENT I D (A)

1
500
0.1 PW =1ms
400
PW =10ms
PW =100ms
0.01 300
DC
200
0.001
100

0.0001 0
0.001 0.01 0.1 1 10 100 0 25 50 75 100 125 150 175

DRAIN-SOURCE VOLTAGE V DS (V) AMBIENT TEMPERATURE Ta ( C)

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