Semiconductor KTA1271: Technical Data
Semiconductor KTA1271: Technical Data
Semiconductor KTA1271: Technical Data
FEATURES B C
A
N DIM MILLIMETERS
E A 4.70 MAX
K
G B 4.80 MAX
C 3.70 MAX
MAXIMUM RATING (Ta=25ᴱ) D
D 0.45
J
E 1.00
CHARACTERISTIC SYMBOL RATING UNIT F 1.27
G 0.85
Collector-Base Voltage VCBO -35 V H 0.45
H J _ 0.50
14.00 +
Collector-Emitter Voltage VCEO -30 V F F K 0.55 MAX
L 2.30
Emitter-Base Voltage VEBO -5 V M 0.45 MAX
N 1.00
1 2 3
C
Collector Current IC -800 mA
M
1. EMITTER
Emitter Current IE 800 mA 2. COLLECTOR
3. BASE
Collector Power Dissipation PC 625 mW
Junction Temperature Tj 150 ᴱ
Storage Temperature Range Tstg -55ᴕ150 ᴱ
TO-92
I C - V CE h FE - I C
-1k 2k
COMMON EMITTER COMMON EMITTER
COLLECTOR CURRENT I C (mA)
DC CURRENT GAIN h FE
-800 -8
-7 500
-6
300
-600 -5 Ta=100 C
-4
Ta=25 C
100
-400 -3 Ta=-25 C
-2 50
-200 30
IB =-1mA
0
0 10
0 -1 -2 -3 -4 -5 -6 -1 -3 -10 -30 -100 -300 -1k
VCE(sat) - I C I C - V BE
-3 -1k
COLLECTOR-EMITTER SATURATION
-500 EMITTER
I C /I B =25
-300 VCE =-1V
-1
VCE(sat) (V)
-0.5 -100
-0.3
-50
C
C
C
-30
25
100
-25
Ta=
Ta=
Ta=
-0.1
-10
-0.05 Ta=100 C
-0.03 Ta=25 C -5
Ta=-25 C -3
-0.01 -1
-1 -3 -10 -30 -100 -300 -1k -0.2 -0.4 -0.6 -0.8 -1.0
Pc - Ta
650
COLLECTOR POWER DISSIPATION
625
600
PC (mW)
575
550
525
500
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)