SEMICONDUCTOR KTC1027

TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR

HIGH VOLTAGE APPLICATION.

B D
FEATURE
ᴌComplementary to KTA1023.

A
P DIM MILLIMETERS
DEPTH:0.2 A 7.20 MAX
B 5.20 MAX
C
C 0.60 MAX
MAXIMUM RATING (Ta=25ᴱ) S

G
Q D 2.50 MAX
E 1.15 MAX
CHA RACTERISTIC SYMBOL RATING UNIT K
F 1.27

R
G 1.70 MAX
Collector-Base Voltage VCBO 120 V F F H 0.55 MAX
J _ 0.50
14.00 +
Collector-Emitter Voltage VCEO 120 V H H H
K 0.35 MIN
L _ 0.10
0.75 +
Emitter-Base Voltage VEBO 5 V M E M M 4
N 25
Collector Current IC 800 mA O 1.25

D
1 2 3 L
H

O
P Φ1.50
Emitter Current IE -800 mA N N Q 0.10 MAX
R _ 0.50
12.50 +
1. EMITTER
Collector Power Dissipation PC 1 W S 1.00
2. COLLECTOR

Junction Temperature Tj 150 ᴱ 3. BASE

Storage Temperature Range Tstg -55ᴕ150 ᴱ

TO-92L

ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)

CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=120V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=10mA, IB=0 120 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 5.0 - - V
DC Current Gain hFE (Note) VCE=5V, IC=100mA 80 - 240
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=50mA - - 1.0 V
Base-Emitter Voltage VBE VCE=5V, IC=500mA - - 1.0 V
Transition Frequency fT VCE=5V, IC=100mA - 120 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - - 30 pF
Note : hFE Classification O:80ᴕ160, Y:120ᴕ240

1994. 12. 20 Revision No : 0 1/2

 KTC1027

I C - VCE h FE - I C
1k 300
COMMON EMITTER
COLLECTOR CURRENT I C (mA)

Ta=25 C Ta=100 C
15mA

DC CURRENT GAIN hFE

800 Ta=25 C
7mA
10mA Ta=-25 C
5mA 100
600
4mA
50
3mA
400
2mA 30
COMMON EMITTER
200 I B =1mA VCE =5V
0mA
0 10
0 2 4 6 8 10 12 3 5 10 30 100 300 1k

COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)

VCE(sat) - I C I C - VBE
800
COLLECTOR-EMITTER SATURATION

1
COLLECTOR CURRENT I C (mA)

COMMON EMITTER COMMON EMITTER

0.5 I C /I B=10 V CE =5V
VOLTAGE VCE(sat) (V)

0.3 600

00 C

C
5 C
Ta=-25
0.1 Ta=100 C 400

Ta=1

Ta=2
Ta=25 C
0.05
Ta=-25 C
0.03 200

0.01 0
0 5 10 30 50 100 300 1k 0 0.2 0.4 0.6 0.8 10

COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE VBE (V)

Pc - Ta SAFE OPERATING AREA

COLLECTOR POWER DISSIPATION PC (W)

3.5 3k
1 Tc=Ta I C MAX. SINGLE NONREPETIT-
1
(PULSED) IVE PULSE Ta=25 C
3.0 2 Ta=25 C
COLLECTOR CURRENT I C (mA)

I C MAX.
1m
10m
100

2.5 1k (CONTINUOUS)
s
ms

2.0 500 DC
OP
1.5 300 Tc ER
=2 AT
2 5 I
C ON
1.0

0.5 100
CURVES MUST
VCEO MAX.

BE DERATED
0 50 LINEARLY WITH
0 20 40 60 80 100 120 140 160 INCREASE IN
TEMPERATURE
AMBIENT TEMPERATURE Ta ( C)
20
3 5 10 30 50 100 300

COLLECTOR-EMITTER VOLTAGE VCE (V)

1994. 12. 20 Revision No : 0 2/2