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Questions on CH.

16
(answer and questions from main book)

True or False:
1. Silicon can be doped with a trivalent material like aluminum to create an n-type
material. (F)
2. The minority carriers in an n-type material are holes. (T)
3. Before a diode fully conducts, the bias must overcome the barrier potential. (T)
4. When forward bias is applied to a diode, the depletion region widens. (F)
5. The output frequency from a full-wave rectifier is the same as the input
frequency. (F)
6. The peak output voltage of a full-wave bridge rectifier is one-half the input
voltage. (F)
7. If one diode is open in a bridge rectifier, the output will drop to zero. (F)
8. Line regulation specifies how much change occurs in the output voltage for a
given change in the input voltage. (T)
9. Normally, zener diodes, varactor diodes, and photodiodes are operated with
reverse bias. (T)
10. An application for a zener diode is to control the frequency in a voltage-
controlled oscillator. (F)

MCQ:

1. Atoms within a semiconductor crystal are held together by


(a) atomic glue (b) subatomic particles (c) covalent bonds (d) the valence band
2. Free electrons exist in the
(a) valence band (b) conduction band (c) lowest band (d) recombination band

3. A hole is
(a) a vacancy in the valence band left by an electron
(b) a vacancy in the conduction band
(c) a positive electron
(d) a conduction band electron

4. The process of adding impurity atoms to a pure semiconductor is called


(a) recombination (b) crystalization (c) bonding (d) doping

5. The two types of current in a semiconductor are


(a) positive current and negative current
(b) electron current and conventional current
(c) electron current and hole current
(d) forward current and reverse current

6. The majority carriers in an n-type semiconductor are


(a) electrons (b) holes (c) positive ions (d) negative ions

7. The pn junction is found in


(a) diodes (b) silicon (c) all semiconductive material (d) answers (a) and (b)

8. In a diode, the region near the pn junction consisting of positive and negative
ions is called the
(a) neutral zone (b) recombination region (c) depletion region (d) diffusion area

9. A fixed dc voltage that sets the operating condition of a semiconductive device is


called the
(a) bias (b) depletion voltage (c) battery (d) barrier potential
10. In a diode, the two bias conditions are
(a) positive and negative (b) blocking and nonblocking (c) open and closed
(d)forward and reverse

11. When a diode is forward-biased, it is


(a) blocking current (b) conducting current (c) similar to an open switch
(d) similar to a closed switch (e) answers (a) and (c) (f) answers (b) and (d)

12. The voltage across a forward-biased silicon diode is approximately


(a) 0.7 V (b) 0.3 V (c) 0 V (d) dependent on the bias voltage

13. The process of converting ac to pulsating dc is called


(a) clipping (b) charging (c) rectification (d) filtering

14. The output frequency of a half-wave rectifier with a 60 Hz sinusoidal input is


(a) 30 Hz (b) 60 Hz (c) 120 Hz (d) 0 Hz

15. The number of diodes used in a half-wave rectifier is


(a) one (b) two (c) three (d) four

16. If a 75 V peak sine wave is applied to a half-wave rectifier, the peak inverse
voltage across the diode is
(a) 75 V (b) 150 V (c) 37.5 V (d) 0.7 V

17. The output frequency of a full-wave rectifier with a 60 Hz sinusoidal input is


(a) 30 Hz (b) 60 Hz (c) 120 Hz (d) 0 Hz

18. Two types of full-wave rectifier are


(a) single diode and dual diode (b) primary and secondary
(c) forward-biased and reverse-biased (d) center-tapped and bridge
19. When a diode in a center-tapped rectifier opens, the output is
(a) 0 V (b) half-wave rectified (c) reduced in amplitude (d) unaffected

20. During the positive half-cycle of the input voltage in a bridge rectifier,
(a) one diode is forward-biased (b) all diodes are forward-biased
(c) all diodes are reverse-biased (d) two diodes are forward-biased

21. The process of changing a half-wave or a full-wave rectified voltage to a


constant dc voltage is called
(a) filtering (b) ac to dc conversion (c) damping (d) ripple suppression

22. The small variation in the output voltage of a dc power supply is called
(a) average voltage (b) surge voltage (c) residual voltage (d) ripple voltage

23. The zener diode is designed to operate in


(a) zener breakdown (b) forward bias (c) saturation (d) cutoff

24. Zener diodes are sometimes used as


(a) current limiters (b) power distributors (c) voltage references
(d) variable resistors

25. Varactor diodes are used as variable


(a) resistors (b) current sources (c) inductors (d) capacitors

26. LEDs are based on the principle of


(a) forward bias (b) electroluminescence (c) photon sensitivity
(d) electron-hole recombination

27. In a photodiode, light produces


(a) reverse current (b) forward current (c) electroluminescence
(d) dark current
Questions on Transistors
(answer and questions from main book)

True or False:
1. In a bipolar transistor, if the base-emitter junction is reverse-biased, the transistor
will be cutoff. (T)

2. When a transistor is saturated, an increase in base current is not possible. (F)

3. A load line is drawn between saturation and cutoff. (T)

4. The power gain of a CC amplifier is the same as the current gain. (T)

5. A class B amplifier is more efficient than a class A amplifier. (T)

6. A JFET is always operated with the gate-source junction forward-biased. (F)

7. The drain current when the gate-to-source voltage is zero is called IGSS. (F)

8. The transconductance of a FET is the ratio of ac drain current to gate-to-source


voltage. (T)

9. A CD amplifier has a current gain less than 1. (F)

10. The input to a feedback oscillator is only the power supply voltage. (T)
**‫**هتالقى القوانين تحت خااااااالص‬
MCQ:

1. The n-type regions in an npn bipolar junction transistor are


(a) collector and base (b) collector and emitter (c) base and emitter
(d) collector, base, and emitter

2. The n-region in a pnp transistor is the


(a) base (b) collector (c) emitter (d) case

3. For normal operation of an npn transistor, the base must be


(a) disconnected (b) negative with respect to the emitter
(c) positive with respect to the emitter (d) positive with respect to the collector

4. The three currents in a BJT are


(a) forward, reverse, and neutral (b) drain, source, and gate
(c) alpha, beta, and sigma (d) base, emitter, and collector

5. Beta ( ) is the ratio of


(a) collector current to emitter current (b) collector current to base current
(c) emitter current to base current (d) output voltage to input voltage

6. Alpha ( ) is the ratio of


(a) collector current to emitter current (b) collector current to base current
(c) emitter current to base current (d) output voltage to input voltage

7. If the beta of a certain transistor operating in the linear region is 30 and the base
current is 1 mA, the collector current is
(a) 0.033 mA (b) 1 mA (c) 30 mA (d) unknown

8. If the base current of a transistor operating in the linear region increases,


(a) the collector current increases and the emitter current decreases
(b) the collector current decreases and the emitter current decreases
(c) the collector current increases and the emitter current does not change
(d) the collector current increases and the emitter current increases
9. When an n-channel JFET is biased for conduction, the gate is
(a) positive with respect to the source (b) negative with respect to the source
(c) positive with respect to the drain (d) at the same voltage as the drain

10. When the gate-to-source voltage of an n-channel JFET is increased, the drain
current
(a) decreases (b) increases (c) stays constant (d) becomes zero

11. When a negative gate-to-source voltage is applied to an n-channel MOSFET, it


operates in the
(a) cutoff state (b) saturated state (c) enhancement mode (d) depletion mode

12. In a common-emitter (CE) amplifier, the capacitor from emitter to ground is


called the
(a) coupling capacitor (b) decoupling capacitor
(c) bypass capacitor (d) tuning capacitor

13. If the capacitor from emitter to ground in a CE amplifier is removed, the voltage
gain
(a) increases (b) decreases (c) is not affected (d) becomes erratic

14. When the collector resistor in a CE amplifier is increased in value, the voltage
gain
(a) increases (b) decreases (c) is not affected (d) becomes erratic

15. The input resistance of a CE amplifier is affected by


(a)∝ 𝑎𝑛𝑑 re (b)𝛽 𝑎𝑛𝑑 re (c) Rc and re (d) Re, re, 𝑎𝑛𝑑 𝛽

16. The output signal of a CE amplifier is always


(a) in phase with the input signal
(b) out of phase with the input signal
(c) larger than the input signal
(d) equal to the input signal
1. What is the value of IC for IE = 5.34 mA and IB = 475 µA?
ans:
Ic = IE - IB = 5.34 × 10−3 − 475 × 10−6 = 4.865 × 10−3 𝐴

2. What is the αDC when IC = 8.23 mA and IE = 8.69 mA?


ans:
𝐼𝑐 8.23
α= = = 0.947
𝐼𝐷 8.69

3. A certain transistor has an IC = 25 mA and an IB = 200 µA. Determine the


𝛽𝐷𝐶.
ans:
𝐼𝑐 25×10 −3
𝛽= = = 125
𝐼𝐵 200×10 −6

4. In a certain transistor circuit, the base current is 2% of the 30 mA emitter


current. Determine the collector current.
ans:
2
IB = × IE ,IB = 0.6 mA , Ic = IE - IB = 30 - 0.6 = 29.4 mA
100

Rules:
𝐼𝑐
𝛽=
𝐼𝐵
𝐼𝑐
𝛼=
𝐼𝐸
 I E = IC + IB
𝛼
𝛽=
1−𝛼

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