FDP075N15A_F102/FDB075N15A N-Channel PowerTrench® MOSFET

October 2012

FDP075N15A_F102 / FDB075N15A
N-Channel PowerTrench® MOSFET
150V, 130A, 7.5mΩ
Features Description
• RDS(on) = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
• Fast Switching been especially tailored to minimize the on-state resistance and
• Low Gate Charge yet maintain superior switching performance.

• High Performance Trench Technology for Extremely Low

RDS(on)

• High Power and Current Handling Capability

Application
• DC to DC Converters
• RoHS Compliant
• Synchronous Rectification for Telecommunication PSU
• Battery Charger
• AC motor drives and Uninterruptible Power Supplies
• Off-line UPS

D D

G
D2-PAK
G TO-220 G S FDB Series
D
S
S

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

FDP075N15A_F102
Symbol Parameter Units
FDB075N15A
VDSS Drain to Source Voltage 150 V
VGSS Gate to Source Voltage ±20 V
-Continuous (TC = 25oC) 130
ID Drain Current A
-Continuous (TC = 100oC) 92
IDM Drain Current - Pulsed (Note 1) 522 A
EAS Single Pulsed Avalanche Energy (Note 2) 588 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns
(TC = 25oC) 333 W
PD Power Dissipation
- Derate above 25oC 2.22 W/oC
oC
TJ, TSTG Operating and Storage Temperature Range -55 to +175
Maximum Lead Temperature for Soldering Purpose, oC
TL 300
1/8” from Case for 5 Seconds
*Package limitation current is 120A.

Thermal Characteristics
FDP075N15A_F102
Symbol Parameter Units
FDB075N15A
RθJC Thermal Resistance, Junction to Case, Max 0.45
o
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max 62.5 C/W
RθJA 2
Thermal Resistance, Junction to Ambient D2-PAK (1 in pad of 2 oz copper), Max 40

©2012 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDP075N15A_F102 / FDB075N15A Rev. C1
 FDP075N15A_F102/FDB075N15A N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information
Device Marking Device Package Description Quantity
FDP075N15A FDP075N15A_F102 TO-220 F102: Trimmed Leads 50

Device Marking Device Package Reel Size Tape Width Quantity

FDB075N15A FDB075N15A D2-PAK 330mm 24mm 800

Electrical Characteristics TC = 25oC unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250μA, VGS = 0V 150 - - V
ΔBVDSS Breakdown Voltage Temperature
ID = 250μA, Referenced to 25oC - 0.1 - V/oC
ΔTJ Coefficient
VDS = 120V, VGS = 0V - - 1
IDSS Zero Gate Voltage Drain Current μA
VDS = 120V, TC = 150oC - - 500
IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 μA

On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250μA 2.0 - 4.0 V
RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 100A - 6.25 7.5 mΩ
gFS Forward Transconductance VDS = 10V, ID = 100A - 164 - S

Dynamic Characteristics
Ciss Input Capacitance - 5525 7350 pF
VDS = 75V, VGS = 0V
Coss Output Capacitance - 516 685 pF
f = 1MHz
Crss Reverse Transfer Capacitance - 21 - pF
Coss(er) Energy Related Output Capacitance VDS = 75V, VGS = 0V - 909 - pF
Qg(tot) Total Gate Charge at 10V - 77 100 nC
Qgs Gate to Source Gate Charge VDS = 75V, ID = 100A - 26 - nC
Qgs2 Gate Charge Threshold to Plateau VGS = 10V - 11 - nC
(Note 4)
Qgd Gate to Drain “Miller” Charge - 16 - nC
ESR Equivalent Series Resistance(G-S) f = 1MHz - 2.29 - Ω

Switching Characteristics
td(on) Turn-On Delay Time - 28 66 ns
tr Turn-On Rise Time VDD = 75V, ID = 100A - 37 84 ns
td(off) Turn-Off Delay Time VGS = 10V, RGEN = 4.7Ω - 62 134 ns
tf Turn-Off Fall Time (Note 4) - 21 52 ns

Drain-Source Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current - - 130 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 520 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 100A - - 1.25 V
trr Reverse Recovery Time VGS = 0V, VDD = 75V, ISD = 100A - 97 - ns
Qrr Reverse Recovery Charge dIF/dt = 100A/μs - 264 - nC

Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. Starting TJ = 25°C, L = 3 mH, IAS = 19.8 A
3. ISD ≤ 100 A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially Independent of Operating Temperature Typical Characteristics

FDP075N15A_F102 / FDB075N15A Rev. C1 2 www.fairchildsemi.com

 FDP075N15A_F102/FDB075N15A N-Channel PowerTrench® MOSFET
Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

400 400
VGS = 15.0V *Notes:
10.0V 1. VDS = 10V
8.0V 2. 250μs Pulse Test
7.0V 100
6.5V
ID, Drain Current[A]

ID, Drain Current[A]

100 6.0V o
175 C
5.5V
5.0V o
25 C
o
-55 C
10

*Notes:
1. 250μs Pulse Test
10 o
2. TC = 25 C
7 1
0.1 1 3 2 3 4 5 6
VDS, Drain-Source Voltage[V] VGS, Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
10 400
Drain-Source On-Resistance

IS, Reverse Drain Current [A]

100
o
175 C
8
RDS(ON) [mΩ],

VGS = 10V
o
25 C

VGS = 20V 10
6

*Notes:
1. VGS = 0V
o
*Note: TC = 25 C 2. 250μs Pulse Test
4 1
0 100 200 300 400 0.0 0.5 1.0 1.5
ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10000 10

Ciss VDS = 30V

VGS, Gate-Source Voltage [V]

8 VDS = 75V
VDS = 120V
Capacitances [pF]

1000 Coss
6

*Note: 4
100 1. VGS = 0V
2. f = 1MHz
Ciss = Cgs + Cgd (Cds = shorted) Crss 2
Coss = Cds + Cgd
Crss = Cgd *Note: ID = 100A
10 0
0.1 1 10 100 200 0 30 60 90
VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]

FDP075N15A_F102 / FDB075N15A Rev. C1 3 www.fairchildsemi.com

 FDP075N15A_F102/FDB075N15A N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature
1.10 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.05

RDS(on), [Normalized]
BVDSS, [Normalized]

2.0

1.00 1.5

1.0
0.95
*Notes: 0.5 *Notes:
1. VGS = 0V 1. VGS = 10V
2. ID = 250μA 2. ID = 100A
0.90 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
1000
140
VGS = 10V
100μs 120
100
ID, Drain Current [A]

100
ID, Drain Current [A]

10 1ms Limited by package

80
Operation in This Area 10ms
1 is Limited by R DS(on) 100ms 60
DC
*Notes: 40
0.1 o o
1. TC = 25 C RθJC = 0.45 C/W
o 20
2. TJ = 175 C
3. Single Pulse
0.01 0
0.1 1 10 100 300 25 50 75 100 125 150 175
VDS, Drain-Source Voltage [V] o
TC, Case Temperature [ C]

Figure 11. Eoss vs. Drain to Source Voltage Figure 12. Unclamped Inductive
Switching Capability
7 200

6 100
IAS, AVALANCHE CURRENT (A)

5
EOSS, [μJ]

4 TJ = 25 oC

3 10
TJ = 150 oC
2

0 1
0 25 50 75 100 125 150 0.001 0.01 0.1 1 10 100 1000
VDS, Drain to Source Voltage [V] tAV, TIME IN AVALANCHE (ms)

FDP075N15A_F102 / FDB075N15A Rev. C1 4 www.fairchildsemi.com

 FDP075N15A_F102/FDB075N15A N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)

Figure 13. Transient Thermal Response Curve

Thermal Response [ZθJC]

0.5

0.1 0.2

0.1
PDM
0.05
t1
0.02
0.01
t2
0.01
*Notes:
Single pulse o
1. ZθJC(t) = 0.45 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
0.001
-5 -4 -3 -2 -1
10 10 10 10 10 1
Rectangular Pulse Duration [sec]

FDP075N15A_F102 / FDB075N15A Rev. C1 5 www.fairchildsemi.com

 FDP075N15A_F102/FDB075N15A N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FDP075N15A_F102 / FDB075N15A Rev. C1 6 www.fairchildsemi.com

 FDP075N15A_F102/FDB075N15A N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT +

VDS

I SD
L

Driver
RG
Same Type
as DUT VDD

VGS • dv/dt controlled by RG

• ISD controlled by pulse period

Gate Pulse Width

VGS D = --------------------------
Gate Pulse Period 10V
( Driver )

IFM , Body Diode Forward Current

I SD
( DUT ) di/dt

IRM

Body Diode Reverse Current

VDS
( DUT ) Body Diode Recovery dv/dt

VSD VDD

Body Diode
Forward Voltage Drop

FDP075N15A_F102 / FDB075N15A Rev. C1 7 www.fairchildsemi.com

 FDP075N15A_F102/FDB075N15A N-Channel PowerTrench® MOSFET
Mechanical Dimensions
TO-220
(F102: Trimmed Leads)

Dimensions in Millimeters

FDP075N15A_F102 / FDB075N15A Rev. C1 8 www.fairchildsemi.com

 FDP075N15A_F102/FDB075N15A N-Channel PowerTrench® MOSFET
Mechanical Dimensions

D2PAK

Dimensions in Millimeters

FDP075N15A_F102 / FDB075N15A Rev. C1 9 www.fairchildsemi.com

 FDP075N15A_F102/FDB075N15A N-Channel PowerTrench® MOSFET
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Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications
Advance Information Formative / In Design may change in any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later

Preliminary First Production date. Fairchild Semiconductor reserves the right to make changes at any time without
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Semiconductor. The datasheet is for reference information only.
Rev. I61

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FDP075N15A_F102 / FDB075N15A Rev. C1
10