100N10

100N10
N-Channel PowerTrench® MOSFET
100V, 75A, 10mΩ

Features
Applications
• RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A
DC to DC converters / Synchronous Rectification
• Fast switching speed

• Low gate charge Description

• High performance trench technology for extremely low RDS(on) This N-Channel MOSFET is producedusing Fairchild Semicon-
ductor’s advanced PowerTrench process that has been espe-
• High power and current handing capability
cially tailored to minimize the on-state resistance and yet
• RoHS compliant maintain superior switching performance.

TO-220
G D S
S

MOSFET Maximum Ratings TC = 25oC unless otherwise noted*

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 100 V
VGSS Gate to Source Voltage ±20 V
ID Drain Current -Continuous (TC = 75oC) 75 A
IDM Drain Current - Pulsed (Note 1) 300 A
EAS Single Pulsed Avalanche Energy (Note 2) 365 mJ
dv/dt Peak Diode Recovery dv/dt (Note 3) 4.8 V/ns
(TC = 25oC) 208 W
PD Power Dissipation
- Derate above 25oC 1.4 W/oC
TJ, TSTG Operating and Storage Temperature Range -55 to +175 oC

Maximum Lead Temperature for Soldering Purpose, o

TL 300 C
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature

Thermal Characteristics
Symbol Parameter Ratings Units
RθJC Thermal Resistance, Junction to Case 0.72
RθCS Thermal Resistance, Case to Sink Typ. 0.5 oC/W

RθJA Thermal Resistance, Junction to Ambient 62.5

*When mounted on the minimum pad size recommended (PCB Mount)

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 100N10

Package Marking and Ordering Information TC = 25oC unless otherwise noted

Device Marking Device Package Reel Size Tape Width Quantity
FDP100N10 FDP100N10 TO-220 - - 50

Electrical Characteristics
Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V, TJ = 25oC 100 - - V
∆BVDSS Breakdown Voltage Temperature
ID = 250µA, Referenced to 25oC - 0.1 - V/oC
/ ∆TJ Coefficient
VDS = 100V, VGS = 0V - - 1
IDSS Zero Gate Voltage Drain Current µA
VDS = 100V, VGS = 0V, TJ = 150oC - - 500
IGSS Gate to Body Leakage Current VGS = ±20V, VDS = 0V - - ±100 nA

On Characteristics
VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250µA 2.5 - 4.5 V
RDS(on) Static Drain to Source On Resistance VGS = 10V, ID = 75A - 8.2 10 mΩ
gFS Forward Transconductance VDS = 10V, ID = 37.5A (Note 4) - 110 - S

Dynamic Characteristics
Ciss Input Capacitance - 5500 7300 pF
VDS = 25V, VGS = 0V
Coss Output Capacitance - 530 710 pF
f = 1MHz
Crss Reverse Transfer Capacitance - 220 325 pF
Qg(tot) Total Gate Charge at 10V - 76 100 nC
Qgs Gate to Source Gate Charge VDS = 50V, ID = 75A - 30 - nC
VGS = 10V
Qgd Gate to Drain “Miller” Charge (Note 4, 5) - 20 - nC

Switching Characteristics
td(on) Turn-On Delay Time - 70 150 ns
tr Turn-On Rise Time VDD = 50V, ID = 75A - 265 540 ns
td(off) Turn-Off Delay Time VGS = 10V, RGEN = 25Ω - 125 260 ns
tf Turn-Off Fall Time (Note 4, 5) - 115 240 ns

Drain-Source Diode Characteristics

IS Maximum Continuous Drain to Source Diode Forward Current - - 75 A
ISM Maximum Pulsed Drain to Source Diode Forward Current - - 300 A
VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 75A - - 1.25 V
trr Reverse Recovery Time VGS = 0V, ISD = 75A - 71 - ns
Qrr Reverse Recovery Charge dIF/dt = 100A/µs (Note 4) - 164 - nC

Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.13mH, IAS = 75A, VDD = 25V, RG = 25Ω, Starting TJ = 25oC
3: ISD ≤ 75A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25oC
4: Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5: Essentially Independent of Operating Temperature Typical Characteristics

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 100N10

Typical Performance Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

1000
500 VGS = 15.0 V
10.0 V
8.0 V
7.0 V
ID,Drain Current[A]

6.5 V

ID,Drain Current[A]
100 6.0 V 100
5.5 V o
150 C
o
-55 C

o
10 25 C

10 *Notes: *Notes:
1. 250µs Pulse Test 1. VDS = 20V
o
2. TC = 25 C 2. 250µs Pulse Test
5 1
0.1 1 5 2 4 6 8 10 12
VDS,Drain-Source Voltage[V] VGS,Gate-Source Voltage[V]

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current
and Temperature
0.020 1000
Drain-Source On-Resistance

IS, Reverse Drain Current [A]

0.015
100
RDS(ON) [Ω],

o
150 C
VGS = 10V
0.010

o
25 C
VGS = 20V 10
0.005
*Notes:
1. VGS = 0V
o
*Note: TJ = 25 C 2. 250µs Pulse Test
0.000 1
0 50 100 150 200 250 300 350 0.2 0.4 0.6 0.8 1.0 1.2 1.4
ID, Drain Current [A] VSD, Body Diode Forward Voltage [V]

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

8000 10
Ciss = Cgs + Cgd (Cds = shorted) VDS = 80V
Coss = Cds + Cgd VDS = 50V
VGS, Gate-Source Voltage [V]

Crss = Cgd
VDS = 25V
8
6000 Ciss
Capacitances [pF]

*Note: 6
1. VGS = 0V
4000 2. f = 1MHz
Coss
4

2000
Crss 2

*Note: ID = 75A
0 0
0.1 1 10 30 0 15 30 45 60 75 90
VDS, Drain-Source Voltage [V] Qg, Total Gate Charge [nC]

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 100N10

Typical Performance Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature
1.2 3.0
Drain-Source Breakdown Voltage

2.5

Drain-Source On-Resistance
1.1
BVDSS, [Normalized]

RDS(on), [Normalized]
2.0

1.0 1.5

1.0
0.9
*Notes: 0.5 *Notes:
1. VGS = 0V 1. VGS = 10V
2. ID = 250µA 2. ID = 75A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current
vs. Case Temperature
500
20µs

100µs 75
100
ID, Drain Current [A]

1ms
ID, Drain Current [A]

10ms

10 Operation in This Area DC 50

is Limited by R DS(on)

1 *Notes: 25
o
1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
0.1
1 10 100 200 0
VDS, Drain-Source Voltage [V] 25 50 75 100 125 o 150 175
TC, Case Temperature [ C]

Figure 11. Transient Thermal Response Curve

0.5
Thermal Response [ZθJC]

0.2
0.1
0.1

0.05 PDM
0.02 t1
0.01 t2
0.01
Single pulse
*Notes:
o
1. ZθJC(t) = 0.72 C/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
1E-3
-5 -4 -3 -2 -1 0
10 10 10 10 10 10
Rectangular Pulse Duration [sec]

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 100N10

Mechanical Dimensions

TO-220
9.90 ±0.20 4.50 ±0.20
1.30 ±0.10

(8.70)

2.80 ±0.10
(1.70)

+0.10
ø3.60 ±0.10 1.30 –0.05

18.95MAX.
(3.70)

15.90 ±0.20
9.20 ±0.20

(1.46)

(3.00)
(45°
)
(1.00)
13.08 ±0.20

10.08 ±0.30

1.27 ±0.10 1.52 ±0.10

0.80 ±0.10 +0.10

0.50 –0.05 2.40 ±0.20
2.54TYP 2.54TYP
[2.54 ±0.20] [2.54 ±0.20]

10.00 ±0.20

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