January 1996

NDP603AL / NDB603AL
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features

These N-Channel logic level enhancement mode power 25A, 30V. RDS(ON) = 0.022Ω @ VGS=10V.
field effect transistors are produced using Fairchild's
proprietary, high cell density, DMOS technology. This Critical DC electrical parameters specified at elevated
very high density process is especially tailored to temperature.
minimize on-state resistance. These devices are Rugged internal source-drain diode can eliminate the need
particularly suited for low voltage applications such as for an external Zener diode transient suppressor.
DC/DC converters and high efficiency switching circuits
where fast switching, low in-line power loss, and High density cell design for extremely low RDS(ON).
resistance to transients are needed.
175°C maximum junction temperature rating.

______________________________________________________________________________

Absolute Maximum Ratings T C = 25°C unless otherwise noted

Symbol Parameter NDP603AL NDB603AL Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage - Continuous ± 20 V
ID Drain Current - Continuous 25 (Note 1) A
- Pulsed 100
PD Total Power Dissipation @ TC = 25°C 50 W
Derate above 25°C 0.4 W/°C
TJ,TSTG Operating and Storage Temperature Range -65 to 175 °C
TL Maximum lead temperature for soldering purposes, 275 °C
1/8" from case for 5 seconds
THERMAL CHARACTERISTICS

RθJC Thermal Resistance, Junction-to-Case 2.5 °C/W

RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

© 1997 Fairchild Semiconductor Corporation

NDP603AL.SAM
 Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
DRAIN-SOURCE AVALANCHE RATINGS (Note 2)
W DSS Single Pulse Drain-Source Avalanche VDD = 15 V, ID = 25 A 100 mJ
Energy
IAR Maximum Drain-Source Avalanche Current 25 A
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10 µA
IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
ON CHARACTERISTICS (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1.1 1.5 3 V
o
TJ = 125 C 0.7 1.1 2.2
VDS = VGS, ID = 10 mA 1.4 1.85 3
o
TJ = 125 C 1 1.5 2.2
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 25 A 0.019 0.022 Ω
TJ = 125oC 0.028 0.045
VGS = 4.5 V, ID = 10 A 0.031 0.04
ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 60 A
VGS = 4.5 V, VDS = 10 V 15
gFS Forward Transconductance VDS = 10 V, ID = 25 A 18 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 15 V, VGS = 0 V, 1100 pF
f = 1.0 MHz
Coss Output Capacitance 540 pF
Crss Reverse Transfer Capacitance 175 pF
SWITCHING CHARACTERISTICS (Note 2)
tD(on) Turn - On Delay Time VDD = 15 V, ID = 25 A, 15 30 ns
tr Turn - On Rise Time VGS = 10 V, RGEN = 24 Ω 70 110 ns
tD(off) Turn - Off Delay Time 90 150 ns
tf Turn - Off Fall Time 80 130 ns
Qg Total Gate Charge VDS = 10 V, 28 40 nC
ID = 25 A, VGS = 10 V
Qgs Gate-Source Charge 5 7 nC
Qgd Gate-Drain Charge 7 10 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current 25 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 25 A (Note 2) 1.3 V
Note:
1. Maximum DC current limited by the package.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

NDP603AL.SAM
Typical Electrical Characteristics

80 3
VGS =10V 8.0
7.0

DRAIN-SOURCE ON-RESISTANCE
ID , DRAIN-SOURCE CURRENT (A)

VGS = 4V
6.0 2.5
60 4.5

RDS(on) , NORMALIZED
5.0
2
5.0
40 6.0
4.5 1.5 7.0
8.0
4.0
20 10
1

3.0
0 0.5
0 1 2 3 4 5 0 20 40 60 80
V DS , DRAIN-SOURCE VOLTAGE (V) I D , DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage

and Drain Current.

1.6 2.5

I D = 25A V GS = 10V
DRAIN-SOURCE ON-RESISTANCE

DRAIN-SOURCE ON-RESISTANCE
1.4 VGS =10V
2
RDS(ON), NORMALIZED

R DS(on) , NORMALIZED

1.2 TJ = 125°C
1.5

1
25°C
1
0.8 -55°C

0.6 0.5
-50 -25 0 25 50 75 100 125 150 175 0 20 40 60 80
TJ , JUNCTION TEMPERATURE (°C) I D , DRAIN CURRENT (A)

Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Drain

with Temperature. Current and Temperature.

40 0.05
V DS = 1 0 V TJ = -55°C V DS = 1 0 V
25
125 0.04
30
I D , DRAIN CURRENT (A)

I D , DRAIN CURRENT (A)

TJ = 125°C
25°C
-55°C
0.03

20

0.02

10
0.01

0 0
1 2 3 4 5 6 0.5 1 1.5 2 2.5
V GS , GATE TO SOURCE VOLTAGE (V) VGS , GATE TO SOURCE VOLTAGE (V)

Figure 5. Drain Current Variation with Gate Figure 6. Sub-threshold Drain Current Variation
Voltage and Temperature. with Gate Voltage and Temperature.

NDP603AL.SAM
Typical Electrical Characteristics (continued)
Vth, GATE-SOURCE THRESHOLD VOLTAGE (V)

2.2 1.12
VDS = VGS

DRAIN-SOURCE BREAKDOWN VOLTAGE

ID = 250µA
2
1.08

BV DSS , NORMALIZED
1.8 I D = 10mA

1.6 1.04

1mA
1.4
1

1.2 250uA
0.96
1

0.8 0.92
-50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175
TJ , JUNCTION TEMPERATURE (°C) TJ , JUNCTION TEMPERATURE (°C)

Figure 7. Gate Threshold Variation with Figure 8. Breakdown Voltage Variation with
Temperature Temperature.

2500 10
2000 I D = 25A VDS = 5V
C iss 10
, GATE-SOURCE VOLTAGE (V)

8
20
1000
CAPACITANCE (pF)

C oss 6

500

4
300

200 C rss
f = 1 MHz 2
GS

V GS = 0 V
V

100 0
0.1 0.2 0.5 1 2 5 10 20 30 0 5 10 15 20 25 30
V , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC)
DS

Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics.

VDD t on t off
t d(on) tr t d(off) tf
V IN RL 90% 90%

D V OUT Output, Vout

10% 10%
VGS Inverted
R GEN DUT
90%
G
Input, Vin 50% 50%

10%
S
Pulse Width

Figure 11. Switching Test Circuit Figure 12. Switching Waveforms

NDP603AL.SAM
 Typical Electrical Characteristics (continued)

25
40
T = -55°C
J 20
V GS = 0V
, TRANSCONDUCTANCE (SIEMENS)

IS , REVERSE DRAIN CURRENT (A)

10
20 5
25°C
2
TJ = 125°C
1
15 25°C
0.5
125°C -55°C
0.2
0.1
10

5
V DS = 10V
FS
g

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

0 10 20 30 40
V SD , BODY DIODE FORWARD VOLTAGE (V)
I , DRAIN CURRENT (A)
D

Figure 13. Transconductance Variation with Drain Figure 14. Body Diode Forward Voltage
Current and Temperature Variation with Current and Temperature

150
100
1m
s
50
it 10
im m
)L s
I , DRAIN CURRENT (A)

20 ( ON 10
0m
R DS s
10 1s

DC
5
V GS = 20V
2 SINGLE PULSE
D

TC = 25°C
1

0.5
0.1 0.5 1 2 5 10 30 50
V DS , DRAIN-SOURCE VOLTAGE(V)

Figure 15. Maximum Safe Operating Area

D = 0.5
0.5
TRANSIENT THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE

0.3
0.2 R θJC (t) = r(t) * RθJC
0.2 R = 2.5 °C/W
θJC
0.1
0.1
0.05 P(pk)

0.05 0.02 t1
t2
0.03 0.01
Single Pulse TJ - T C = P * R θJC (t)
0.02
Duty Cycle, D = t1 /t2

0.01
0.01 0.1 1 10 100 1000
t1 ,TIME (ms)

Figure 16. Transient Thermal Response Curve

NDP603AL.SAM
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