Silicon N-Channel Power MOSFET

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CS630 A4H
General Description： VDSS 200 V
CS630 A4H, the silicon N-channel Enhanced VDMOSFETs, is ID 9 A
obtained by the self-aligned planar Technology which reduce the PD(TC=25℃) 83 W

conduction loss, improve switching performance and enhance RDS(ON)Typ 0.23 Ω

the avalanche energy. The transistor can be used in various

power switching circuit for system miniaturization and
higher efficiency. The package form is TO-252, which accords with
the RoHS standard.
Features：
l Fast Switching
l Low ON Resistance(Rdson≤0.28Ω)
l Low Gate Charge (Typical Data:13nC)

l Low Reverse transfer capacitances(Typical:10pF)

l 100% Single Pulse avalanche energy Test
Applications：
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter Rating Units
VDSS Drain-to-Source Voltage 200 V
Continuous Drain Current 9 A
ID
Continuous Drain Current T C = 100 °C 5.5 A
a1
IDM Pulsed Drain Current 36 A
VGS Gate-to-Source Voltage ±30 V
a2
EAS Single Pulse Avalanche Energy 460 mJ
a1
EAR Avalanche Energy ,Repetitive 50 mJ
a1
IAR Avalanche Current 3.2 A
a3
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
Power Dissipation 83 W
PD
Derating Factor above 25°C 0.67 W/℃
TJ，T stg Operating Junction and Storage Temperature Range 150，–55 to 150 ℃
TL Maximum Temperature for Soldering 300 ℃

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Electrical Characteristics（Tc= 25℃ unless otherwise specified）：

OFF Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
VDSS Drain to Source Breakdown Voltage VGS=0V, ID =250µA 200 -- -- V
ΔBVDSS/ΔT J Bvdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.21 -- V/℃
VDS = 200V, V GS= 0V,
Ta = 25℃ -- -- 1
IDSS Drain to Source Leakage Current VDS =160V, V GS= 0V, µA
Ta = 125℃ -- -- 100

IGSS(F) Gate to Source Forward Leakage VGS =+30V -- -- 100 nA

IGSS(R) Gate to Source Reverse Leakage VGS =-30V -- -- -100 nA

ON Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
R DS(ON) Drain-to-Source On-Resistance VGS=10V,ID =5.4A -- 0.23 0.28 Ω
VGS(TH) Gate Threshold Voltage VDS = V GS , ID = 250µA 2.0 4.0 V
Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
g fs Forward Trans conductance VDS=25V, ID =5.4A -- 9.5 -- S
C iss Input Capacitance -- 600 --
VGS = 0V V DS = 25V
C oss Output Capacitance f = 1.0MHz -- 90 -- pF
C rss Reverse Transfer Capacitance -- 10 --

Resistive Switching Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
td(ON) Turn-on Delay Time -- 10 --
tr Rise Time ID =9A VDD = 100V -- 21 --
VGS = 10V RG =12Ω ns
td(OFF) Turn-Off Delay Time -- 24 --
tf Fall Time -- 17 --
Qg Total Gate Charge -- 13
ID =9A V DD =100V
Qgs Gate to Source Charge VGS = 10V -- 4 -- nC
Qgd Gate to Drain (“Miller”)Charge -- 4.5 --

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Source-Drain Diode Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
IS Continuous Source Current (Body Diode) -- -- 9 A
ISM Maximum Pulsed Current (Body Diode) -- -- 36 A
VSD Diode Forward Voltage IS =9A,V GS =0V -- -- 1.5 V
trr Reverse Recovery Time IS =9A,Tj = 25°C -- 120 ns
dIF /dt=100A/us,
Qrr Reverse Recovery Charge V GS=0V -- 495 nC
Pulse width tp≤300µs,δ≤2%

Symbol Parameter Typ. Units

R θJC Junction-to-Case 1.51 ℃/W
R θJA Junction-to-Ambient 62.5 ℃/W

a1
：Repetitive rating; pulse width limited by maximum junction temperature
a2
：L=10.0mH, ID=9.6A, Start T J =25℃
a3
：ISD =9A,di/dt ≤100A/us,V DD ≤BV DS, Start TJ =25℃

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Characteristics Curve：

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Test Circuit and Waveform

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Package Information：

Values(mm)
Items
MIN MAX
A 6.30 6.90
A1 0 0.13
B 5.70 6.30
C 2.10 2.50
D 0.30 0.60
E1 0.60 0.90
E2 0.70 1.00
F 0.30 0.60
G 0.70 1.00
L1 9.60 10.30
L2 2.70 3.10
H 0.60 1.00
M 5.10 5.50
N 2.09 2.49
R 0.3
T 1.40 1.60
Y 5.10 6.30
TO-252 Package

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The name and content of poisonous and harmful material in products

Part’s Name
Hazardous Substance
Pb Hg Cd Cr(VI) PBB PBDE
Limit ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1%

Lead Frame ○ ○ ○ ○ ○ ○
Molding Compound ○ ○ ○ ○ ○ ○
Chip ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○
Solder × ○ ○ ○ ○ ○
○：means the hazardous material is under the criterion of SJ/T11363-2006.
×：means the hazardous material exceeds the criterion of SJ/T11363-2006.
Note
The plumbum element of solder exist in products presently, but within the allowed
range of Eurogroup’s RoHS.

Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the device,
even the permanent failure, which may affect the dependability of the machine. It is suggested
to be used under 80 percent of the maximum ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the smoothness
of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to protect
the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.

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