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    P1260ATF: N-Channel Enhancement Mode MOSFET

    Uploaded by

    GioVoTam
    This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include a maximum drain-source voltage of 600V, on-resistance of 0.65 ohms at 10V gate-source voltage, and continuous drain current rating of 12A. The MOSFET packaging is TO-220F and absolute maximum ratings include drain-source voltage of 600V and gate-source voltage of ±30V. Electrical characteristics include a threshold voltage of 2.5-4.5V and input, output, and reverse transfer capacitances.

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    P1260ATF: N-Channel Enhancement Mode MOSFET

    Uploaded by

    GioVoTam
    162 views5 pages
    This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include a maximum drain-source voltage of 600V, on-resistance of 0.65 ohms at 10V gate-source voltage, and continuous drain current rating of 12A. The MOSFET packaging is TO-220F and absolute maximum ratings include drain-source voltage of 600V and gate-source voltage of ±30V. Electrical characteristics include a threshold voltage of 2.5-4.5V and input, output, and reverse transfer capacitances.

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    This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include a maximum drain-source voltage of 600V, on-resistance of 0.65 ohms at 10V gate-source voltage, and continuous drain current rating of 12A. The MOSFET packaging is TO-220F and absolute maximum ratings include drain-source voltage of 600V and gate-source voltage of ±30V. Electrical characteristics include a threshold voltage of 2.5-4.5V and input, output, and reverse transfer capacitances.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    162 views5 pages

    P1260ATF: N-Channel Enhancement Mode MOSFET

    Uploaded by

    GioVoTam
    This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include a maximum drain-source voltage of 600V, on-resistance of 0.65 ohms at 10V gate-source voltage, and continuous drain current rating of 12A. The MOSFET packaging is TO-220F and absolute maximum ratings include drain-source voltage of 600V and gate-source voltage of ±30V. Electrical characteristics include a threshold voltage of 2.5-4.5V and input, output, and reverse transfer capacitances.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    P1260ATF

    N-Channel Enhancement Mode MOSFET

    PRODUCT SUMMARY
    V(BR)DSS RDS(ON) ID

    600V 0.65Ω @VGS = 10V 12A

    TO-220F

    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)


    PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
    Drain-Source Voltage VDS 600
    V
    Gate-Source Voltage VGS ±30
    TC = 25 °C 12
    Continuous Drain Current2 ID
    TC = 100 °C 8.5
    1, 2
    A
    Pulsed Drain Current IDM 48
    Avalanche Current3 IAS 7.4
    3 EAS
    Avalanche Energy L = 10mH 277 mJ
    TC = 25 °C 50
    Power DissipationA PD W
    TC = 100 °C 20
    Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

    THERMAL RESISTANCE RATINGS


    THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
    Junction-to-Case RqJC 0.56
    °C / W
    Junction-to-Ambient RqJA 62.5
    1
    Pulse width limited by maximum junction temperature.
    2
    Limited only by maximum temperature allowed.
    3
    VDD = 60V , Starting TJ = 25°C

    Ver 1.0 1 2012/4/16


    P1260ATF
    N-Channel Enhancement Mode MOSFET

    ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)


    LIMITS
    PARAMETER SYMBOL TEST CONDITIONS UNIT
    MIN TYP MAX
    STATIC
    Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 600
    V
    Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 2.5 4.5
    Gate-Body Leakage IGSS VDS = 0V, VGS = ±30V ±100 nA
    VDS = 600V, VGS = 0V, TC = 25 °C 25
    Zero Gate Voltage Drain Current IDSS mA
    VDS = 600V, VGS = 0V , TC = 100 °C 250
    Drain-Source On-State
    RDS(ON) VGS = 10V, ID = 6A 0.475 0.650 Ω
    Resistance1
    Forward Transconductance1 gfs VDS = 40V, ID = 6A 16 S
    DYNAMIC
    Input Capacitance Ciss 2290
    Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz 281 pF
    Reverse Transfer Capacitance Crss 46
    2 Qg
    Total Gate Charge 46.5
    2 Qgs VDS = 300V, VGS = 10V, ID = 6A
    Gate-Source Charge 10 nC
    2 Qgd
    Gate-Drain Charge 16.1
    2 td(on)
    Turn-On Delay Time 35
    2 tr
    Rise Time 120
    2
    VDD = 300V, ID = 6A, RG = 25Ω nS
    Turn-Off Delay Time td(off) 115
    Fall Time2 tf 90
    SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
    Continuous Current3 IS 12 A
    1 VSD IF = 8A, VGS = 0V
    Forward Voltage 1.4 V
    Reverse Recovery Time trr 420 nS
    IF = 12A, dlF/dt = 100A / μS, VGS = 0V
    Reverse Recovery Charge Qrr 4.7 nC
    1
    Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
    2
    Independent of operating temperature.
    3
    Pulse width limited by maximum junction temperature.

    Ver 1.0 2 2012/4/16


    P1260ATF
    N-Channel Enhancement Mode MOSFET

    Ver 1.0 3 2012/4/16


    P1260ATF
    N-Channel Enhancement Mode MOSFET

    Ver 1.0 4 2012/4/16


    P1260ATF
    N-Channel Enhancement Mode MOSFET

    Ver 1.0 5 2012/4/16

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