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    bahman
    This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include: - Maximum drain-source voltage of 30V - On-resistance of 9mΩ at a gate-source voltage of 10V - Continuous drain current rating of 57A - Maximum power dissipation of 49W at 25°C junction temperature - Thermal resistance from junction to case of 2.55°C/W

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    Uploaded by

    bahman
    44 views5 pages
    This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include: - Maximum drain-source voltage of 30V - On-resistance of 9mΩ at a gate-source voltage of 10V - Continuous drain current rating of 57A - Maximum power dissipation of 49W at 25°C junction temperature - Thermal resistance from junction to case of 2.55°C/W

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    This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include: - Maximum drain-source voltage of 30V - On-resistance of 9mΩ at a gate-source voltage of 10V - Continuous drain current rating of 57A - Maximum power dissipation of 49W at 25°C junction temperature - Thermal resistance from junction to case of 2.55°C/W

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    44 views5 pages

    1

    Uploaded by

    bahman
    This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include: - Maximum drain-source voltage of 30V - On-resistance of 9mΩ at a gate-source voltage of 10V - Continuous drain current rating of 57A - Maximum power dissipation of 49W at 25°C junction temperature - Thermal resistance from junction to case of 2.55°C/W

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    P0903BD

    N-Channel Enhancement Mode MOSFET

    PRODUCT SUMMARY
    V(BR)DSS RDS(ON) ID

    30V 9mΩ @VGS = 10V 57A

    TO-252

    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)


    PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
    Drain-Source Voltage VDS 30
    V
    Gate-Source Voltage VGS ±20
    TC= 25 °C 57
    Continuous Drain Current ID
    TC= 100 °C 36
    1
    A
    Pulsed Drain Current IDM 160
    Avalanche Current IAS 34
    Avalanche Energy L=0.1mH EAS 60 mJ
    TC= 25 °C 49
    Power Dissipation PD W
    TC= 100°C 19
    Junction & Storage Temperature Range Tj, Tstg -55 to 150
    °C
    Lead Temperature(1/16” from case for 10 sec) TL 275

    THERMAL RESISTANCE RATINGS


    THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
    Junction-to-Case RqJC 2.55
    °C / W
    Junction-to-Ambient RqJA 63
    1
    Pulse width limited by maximum junction temperature.

    REV 1.0 1 2014/5/7


    P0903BD
    N-Channel Enhancement Mode MOSFET

    ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)


    LIMITS
    PARAMETER SYMBOL TEST CONDITIONS UNITS
    MIN TYP MAX
    STATIC
    Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 30
    V
    Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1 1.5 3
    Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
    VDS =24V, VGS = 0V 1
    Zero Gate Voltage Drain Current IDSS mA
    VDS =20V, VGS = 0V, TJ = 125°C 10
    On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 160 A
    Drain-Source On-State VGS =4.5V, ID =30A 11 13
    RDS(ON) mΩ
    Resistance1 VGS =10V, ID =30A 7 9
    Forward Transconductance1 gfs VDS =15V, ID =17A 60 S
    DYNAMIC
    Input Capacitance Ciss 1060
    Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 281 pF
    Reverse Transfer Capacitance Crss 175
    Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.41 Ω
    Total Gate Charge2 Qg 23
    2
    VDS = 0.5V(BR)DSS, VGS = 10V,
    Gate-Source Charge Qgs 4.4 nC
    ID = 30A
    2 Qgd
    Gate-Drain Charge 5.5
    2 td(on)
    Turn-On Delay Time 16
    2 VDS = 15V ,RL = 15Ω
    Rise Time tr 25
    2
    ID≌1A, VGS = 10V, RGEN =6Ω nS
    Turn-Off Delay Time td(off) 60
    Fall Time2 tf 16
    SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
    Continuous Current IS 32 A
    1 VSD IF = IS, VGS = 0V
    Forward Voltage 1.3 V
    Reverse Recovery Time trr IF = 3A, dlF/dt = 100A /ms 40 70 nS
    Reverse Recovery Charge Qrr 28 nC
    1
    Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
    2
    Independent of operating temperature.

    REV 1.0 2 2014/5/7


    P0903BD
    N-Channel Enhancement Mode MOSFET

    REV 1.0 3 2014/5/7


    P0903BD
    N-Channel Enhancement Mode MOSFET

    REV 1.0 4 2014/5/7


    P0903BD
    N-Channel Enhancement Mode MOSFET

    *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。

    REV 1.0 5 2014/5/7

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