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    UNIKCP3004BD

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    gorgor1
    This document provides specifications for an N-channel enhancement mode MOSFET. It can withstand voltages up to 40V, has an on-resistance of 30mΩ at 10V, and can handle continuous drain currents up to 29A. Key electrical characteristics include a gate threshold voltage between 1.7-3.0V and zero gate voltage drain current below 1mA. Thermal characteristics include a junction-to-case thermal resistance of 3°C/W and junction-to-ambient thermal resistance of 62.5°C/W.

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    UNIKCP3004BD

    Uploaded by

    gorgor1
    51 views7 pages
    This document provides specifications for an N-channel enhancement mode MOSFET. It can withstand voltages up to 40V, has an on-resistance of 30mΩ at 10V, and can handle continuous drain currents up to 29A. Key electrical characteristics include a gate threshold voltage between 1.7-3.0V and zero gate voltage drain current below 1mA. Thermal characteristics include a junction-to-case thermal resistance of 3°C/W and junction-to-ambient thermal resistance of 62.5°C/W.

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    mosfet 3004bd

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    This document provides specifications for an N-channel enhancement mode MOSFET. It can withstand voltages up to 40V, has an on-resistance of 30mΩ at 10V, and can handle continuous drain currents up to 29A. Key electrical characteristics include a gate threshold voltage between 1.7-3.0V and zero gate voltage drain current below 1mA. Thermal characteristics include a junction-to-case thermal resistance of 3°C/W and junction-to-ambient thermal resistance of 62.5°C/W.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    51 views7 pages

    UNIKCP3004BD

    Uploaded by

    gorgor1
    This document provides specifications for an N-channel enhancement mode MOSFET. It can withstand voltages up to 40V, has an on-resistance of 30mΩ at 10V, and can handle continuous drain currents up to 29A. Key electrical characteristics include a gate threshold voltage between 1.7-3.0V and zero gate voltage drain current below 1mA. Thermal characteristics include a junction-to-case thermal resistance of 3°C/W and junction-to-ambient thermal resistance of 62.5°C/W.

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    © All Rights Reserved
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    P3004BD

    N-Channel Enhancement Mode MOSFET

    PRODUCT SUMMARY
    V(BR)DSS RDS(ON) ID

    40V 30mΩ @VGS = 10V 29A

    TO-252

    100% Rg tested
    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) 100% UIS tested
    PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
    Gate-Source Voltage VGS ±20 V
    TC = 25 °C 29
    Continuous Drain Current ID
    TC = 70 °C 23
    1
    A
    Pulsed Drain Current IDM 80
    Avalanche Current IAS 19
    Avalanche Energy L = 0.1mH EAS 19 mJ
    TC = 25 °C 42
    Power Dissipation PD W
    TC = 70 °C 27
    Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

    THERMAL RESISTANCE RATINGS


    THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
    Junction-to-Case RqJC 3
    °C / W
    Junction-to-Ambient RqJA 62.5
    1
    Pulse width limited by maximum junction temperature.

    Ver 1.0 1 2013-4-11


    P3004BD
    N-Channel Enhancement Mode MOSFET

    ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)


    LIMITS
    PARAMETER SYMBOL TEST CONDITIONS UNITS
    MIN TYP MAX
    STATIC
    Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 40
    V
    Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.7 1.9 3.0
    Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA
    VDS = 32V, VGS = 0V 1
    Zero Gate Voltage Drain Current IDSS mA
    VDS = 30V, VGS = 0V , TJ = 125 °C 10
    On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 80 A
    Drain-Source On-State VGS = 10V, ID = 18A 25 30
    RDS(ON) mΩ
    Resistance1 VGS =7V, ID = 12A 31 38
    Forward Transconductance1 gfs VDS = 10V, ID = 10A 25 S
    DYNAMIC
    Input Capacitance Ciss 479
    Output Capacitance Coss VGS = 0V, VDS = 20V, f = 1MHz 117 pF
    Reverse Transfer Capacitance Crss 76
    Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.7 Ω
    2 Qg
    Total Gate Charge 10
    2
    VDS =20V, VGS = 10V,
    Gate-Source Charge Qgs 2.8 nC
    ID = 18A
    2 Qgd
    Gate-Drain Charge 3.3
    2 td(on)
    Turn-On Delay Time 15
    2 tr
    Rise Time VDD = 20V, 10
    nS
    Turn-Off Delay Time 2 td(off) ID@ 6.7A, VGS = 10V, RGEN = 6Ω 34
    Fall Time2 tf 10
    SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
    Continuous Current IS 29 A
    1 VSD IF = 18A, VGS = 0V
    Forward Voltage 1.3 V
    Reverse Recovery Time trr 38 nS
    IF = 18A, dlF/dt = 100A / mS
    Reverse Recovery Charge Qrr 29 nC
    1
    Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
    2
    Independent of operating temperature.

    Ver 1.0 2 2013-4-11


    P3004BD
    N-Channel Enhancement Mode MOSFET

    Ver 1.0 3 2013-4-11


    P3004BD
    N-Channel Enhancement Mode MOSFET

    Ver 1.0 4 2013-4-11


    P3004BD
    N-Channel Enhancement Mode MOSFET

    Ver 1.0 5 2013-4-11


    P3004BD
    N-Channel Enhancement Mode MOSFET

    Ver 1.0 6 2013-4-11


    P3004BD
    N-Channel Enhancement Mode MOSFET

    Ver 1.0 7 2013-4-11

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