This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include:
- A breakdown voltage of 25V, on-resistance of 6.8mΩ at 10V gate voltage, and continuous drain current of 68A.
- Maximum ratings of 25V for drain-source voltage, ±20V for gate-source voltage, and 68A of continuous drain current at 25°C.
- Electrical characteristics including a threshold voltage of 1.0-3.0V, on-state drain current of 160A at 10V gate voltage, and input, output, and reverse transfer capacitances.
This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include:
- A breakdown voltage of 25V, on-resistance of 6.8mΩ at 10V gate voltage, and continuous drain current of 68A.
- Maximum ratings of 25V for drain-source voltage, ±20V for gate-source voltage, and 68A of continuous drain current at 25°C.
- Electrical characteristics including a threshold voltage of 1.0-3.0V, on-state drain current of 160A at 10V gate voltage, and input, output, and reverse transfer capacitances.
This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include:
- A breakdown voltage of 25V, on-resistance of 6.8mΩ at 10V gate voltage, and continuous drain current of 68A.
- Maximum ratings of 25V for drain-source voltage, ±20V for gate-source voltage, and 68A of continuous drain current at 25°C.
- Electrical characteristics including a threshold voltage of 1.0-3.0V, on-state drain current of 160A at 10V gate voltage, and input, output, and reverse transfer capacitances.
This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include:
- A breakdown voltage of 25V, on-resistance of 6.8mΩ at 10V gate voltage, and continuous drain current of 68A.
- Maximum ratings of 25V for drain-source voltage, ±20V for gate-source voltage, and 68A of continuous drain current at 25°C.
- Electrical characteristics including a threshold voltage of 1.0-3.0V, on-state drain current of 160A at 10V gate voltage, and input, output, and reverse transfer capacitances.
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 25 V Gate-Source Voltage VGS ±20 TC = 25 °C 68 Continuous Drain Current1 ID TC = 100 °C 43 2 A Pulsed Drain Current IDM 160 Avalanche Current IAS 52 Avalanche Energy L = 0.3mH EAS 135 mJ TC = 25 °C 50 Power Dissipation PD W TC = 100 °C 20 Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case RqJC 2.5 °C / W Junction-to-Ambient RqJA 62.5 1 Pulse width limited by maximum junction temperature. 2 Limited by package.
Ver 1.1 1 2013-3-14
P0603BDL N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
LIMITS PARAMETER SYMBOL TEST CONDITIONS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 25 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1.0 1.7 3.0 Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±250 nA VDS = 20V, VGS = 0V 1 Zero Gate Voltage Drain Current IDSS mA VDS = 20V, VGS = 0V , TJ = 125 °C 10 On-State Drain Current1 ID(ON) VDS = 10V, VGS = 10V 160 A Drain-Source On-State VGS = 4.5V, ID = 35A 7 15 RDS(ON) mΩ Resistance1 VGS = 10V, ID = 35A 4.2 6.8 Forward Transconductance1 gfs VDS = 5V, ID = 20A 80 S DYNAMIC Input Capacitance Ciss 2020 Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 719 pF Reverse Transfer Capacitance Crss 483 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.5 Ω Qg(VGS = 10V) 48.8 Total Gate Charge2 Qg(VGS = 22.4 2 VDS = 15V, VGS = 10V, ID = 35A nC Gate-Source Charge 4.5V) Qgs 11.3 Gate-Drain Charge2 Qgd 15.7 2 td(on) Turn-On Delay Time 10 2 tr Rise Time VDS = 15V, 24 nS Turn-Off Delay Time 2 td(off) ID @ 35A, VGS = 10V, RGEN = 6Ω 35 Fall Time2 tf 16.5 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Continuous Current IS 38 A 1 VSD IF = 35A, VGS = 0V Forward Voltage 1.3 V Reverse Recovery Time trr 37 nS IF = 35A, dlF/dt = 100A / μS Reverse Recovery Charge Qrr 27.3 nC 1 Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2 Independent of operating temperature.
