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    N-Channel Enhancement Mode MOSFET: Product Summary

    Uploaded by

    Imãos Silva
    This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include a drain-source breakdown voltage of 30V, on-resistance of 6mΩ at 10V gate-source voltage, and continuous drain current rating of 30A. The MOSFET has maximum junction and storage temperatures of -55 to 150°C. Electrical characteristics include a gate threshold voltage of 1-3V and total gate charge of 39nC.

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    © All Rights Reserved
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    N-Channel Enhancement Mode MOSFET: Product Summary

    Uploaded by

    Imãos Silva
    23 views5 pages
    This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include a drain-source breakdown voltage of 30V, on-resistance of 6mΩ at 10V gate-source voltage, and continuous drain current rating of 30A. The MOSFET has maximum junction and storage temperatures of -55 to 150°C. Electrical characteristics include a gate threshold voltage of 1-3V and total gate charge of 39nC.

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    p0603bk

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    This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include a drain-source breakdown voltage of 30V, on-resistance of 6mΩ at 10V gate-source voltage, and continuous drain current rating of 30A. The MOSFET has maximum junction and storage temperatures of -55 to 150°C. Electrical characteristics include a gate threshold voltage of 1-3V and total gate charge of 39nC.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    23 views5 pages

    N-Channel Enhancement Mode MOSFET: Product Summary

    Uploaded by

    Imãos Silva
    This document provides specifications for an N-channel enhancement mode MOSFET. Key specifications include a drain-source breakdown voltage of 30V, on-resistance of 6mΩ at 10V gate-source voltage, and continuous drain current rating of 30A. The MOSFET has maximum junction and storage temperatures of -55 to 150°C. Electrical characteristics include a gate threshold voltage of 1-3V and total gate charge of 39nC.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 5

    P0603BK

    N-Channel Enhancement Mode MOSFET

    PRODUCT SUMMARY
    V(BR)DSS RDS(ON) ID

    30V 6mΩ @VGS = 10V 30A

    PDFN 5*6P

    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)


    PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
    Drain-Source Voltage VDS 30
    V
    Gate-Source Voltage VGS ±20
    TC = 25 °C(Package Limited) 30
    2 ID
    Continuous Drain Current TC = 25 °C(Silicon Limited) 80
    TC = 100 °C 50
    1 IDM
    Pulsed Drain Current 150 A
    TA = 25 °C 16
    Continuous Drain Current2 ID
    TA = 70 °C 13
    Avalanche Current IAS 47
    Avalanche Energy L = 0.1mH EAS 112 mJ
    TC = 25 °C 62.5
    Power Dissipation PD
    TC = 100 °C 25
    W
    TA = 25 °C 2.5
    Power Dissipation PD
    TA = 70 °C 1.6
    Operating Junction & Storage Temperature Range TJ, TSTG -55 to 150 °C

    THERMAL RESISTANCE RATINGS


    THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
    Junction-to-Case RqJC 2
    °C / W
    Junction-to-Ambient RqJA 50
    1
    Pulse width limited by maximum junction temperature.
    2
    Limited only by maximum temperature allowed

    Ver 1.0 1 2012/4/16


    P0603BK
    N-Channel Enhancement Mode MOSFET

    ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)


    LIMITS
    PARAMETER SYMBOL TEST CONDITIONS UNIT
    MIN TYP MAX
    STATIC
    Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA 30
    V
    Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA 1 1.6 3
    Gate-Body Leakage IGSS VDS = 0V, VGS = ±30V ±100 nA
    VDS = 24V, VGS = 0V , TJ = 25 °C 1
    Zero Gate Voltage Drain Current IDSS mA
    VDS = 20V, VGS = 0V , TJ = 55 °C 10
    Drain-Source On-State VGS = 4.5V, ID = 15A 5.4 9
    RDS(ON) mΩ
    Resistance1 VGS = 10V, ID = 30A 3.8 6
    Forward Transconductance1 gfs VDS = 15V, ID = 17A 50 S
    DYNAMIC
    Input Capacitance Ciss 2160
    Output Capacitance Coss VGS = 0V, VDS = 15V, f = 1MHz 474 pF
    Reverse Transfer Capacitance Crss 309
    Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz 1.4 Ω
    2 Qg
    Total Gate Charge 39
    2 Qgs VDD = 15V, ID = 30A, VGS = 10V
    Gate-Source Charge 10 nC
    2 Qgd
    Gate-Drain Charge 6
    2 td(on)
    Turn-On Delay Time 26
    2 tr
    Rise Time 18
    2
    VDD = 15V, ID = 10A, RG= 6Ω nS
    Turn-Off Delay Time td(off) 40
    Fall Time2 tf 16
    SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
    Continuous Current IS 2 A
    1 VSD IF =30A, VGS = 0V
    Forward Voltage 1.2 V
    Reverse Recovery Time trr IF = 10 A, dlF/dt = 100A /μS 35 nS
    1
    Pulse test : Pulse Width  300 msec, Duty Cycle  2％.
    2
    Independent of operating temperature.

    Ver 1.0 2 2012/4/16


    P0603BK
    N-Channel Enhancement Mode MOSFET

    Ver 1.0 3 2012/4/16


    P0603BK
    N-Channel Enhancement Mode MOSFET

    Ver 1.0 4 2012/4/16


    P0603BK
    N-Channel Enhancement Mode MOSFET

    Ver 1.0 5 2012/4/16

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