Silicon N-Channel Power MOSFET

○
R

CS220N04 A8H

General Description： V DSS 40 V

CS220N04 A8H, the silicon N-channel Enhanced ID 220 A
VDMOSFETs, is obtained by the self-aligned planar P D (T C =25℃) 333 W

Technology which reduce the conduction loss, improve R D S(ON)Typ 3.2 mΩ

switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit
for system miniaturization and higher efficiency. The
package form is TO-220AB, which accords with the RoHS
standard.
Features：
l Trench FET Power MOSFET
l Low ON Resistance(Rdson≤4mΩ)
l Low Gate Charge (Typical Data:138nC)
l Low Reverse transfer capacitances(Typical:800pF)
l 100% Single Pulse avalanche energy Test
Applications ：
UPS,DC Motor Control and Class D Amplifier.
Absolute （Tc= 25 ℃ unless otherwise specified ）：
Symbol Parameter Rating Units
V DSS Drain-to-Source Voltage 40 V
Continuous Drain Current 220 A
ID
Continuous Drain Current T C = 100 °C 155 A
a1
I DM Pulsed Drain Current 880 A
V GS Gate-to-Source Voltage ±20 V
a2
E AS Single Pulse Avalanche Energy 1400 mJ
a1
E AR Avalanche Energy ,Repetitive 150 mJ
a1
I AR Avalanche Current 5.5 A
a3
dv/dt Peak Diode Recovery dv/dt 5 V/ns
Power Dissipation 333 W
PD
Derating Factor above 25°C 2.2 W/℃
Operating Junction and Storage Temperature
T J ，T stg 175，–55 to 175 ℃
Range

TL Maximum Temperature for Soldering 300 ℃

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Electrical Characteristics（Tc= 25 ℃ unless otherwise specified ）：

OFF Characteristics
Rating
Symbol Parameter Test Conditions Max Units
Min. Typ.
.
Drain to Source Breakdown
V DSS Voltage
V GS =0V, I D =250µA 40 -- -- V
ID=250uA,Reference25
ΔBV DSS /ΔT J Bvdss Temperature Coefficient ℃ -- 0.05 -- V/ ℃
V DS = 40V, V GS = 0V,
T a = 25℃ -- -- 1
I DSS Drain to Source Leakage Current V DS =32V, V GS = 0V, µA
T a = 125℃ -- -- 10

I GSS(F) Gate to Source Forward Leakage V GS =+20V -- -- 100 nA

I GSS(R) Gate to Source Reverse Leakage V GS =-20V -- -- -100 nA

ON Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
R DS(ON ) Drain-to-Source On-Resistance V GS =10V,I D =95A -- 3.2 4 mΩ
V GS(TH) Gate Threshold Voltage V DS = V GS , I D = 250µA 2 4 V
Pulse width tp≤300µs,δ≤2%

Dynamic Characteristics
Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
g fs Forward Trans conductance V DS =15V, I D =95A -- 75 -- S
C iss Input Capacitance -- 13000 --
V GS = 0V V DS =25V
C oss Output Capacitance f = 1.0MHz -- 1400 -- pF
C rss Reverse Transfer Capacitance -- 800 --

Resistive Switching Characteristics

Rating
Symbol Parameter Test Conditions Units
Min. Typ. Max.
t d(ON ) Turn-on Delay Time -- 53 --
tr Rise Time I D =95A V DD =20V -- 145 --
V GS = 10V R G = 12Ω ns
t d(OFF) Turn-Off Delay Time -- 135 --
tf Fall Time -- 120 --
Qg Total Gate Charge -- 138 --
I D =95A V DD =20V
Q gs Gate to Source Charge V GS = 10V -- 55 -- nC
Q gd Gate to Drain (“Miller”)Charge -- 30 --

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Source-Drain Diode Characteristics

Test Rating
Symbol Parameter Units
Conditions Min. Typ. Max.
IS Continuous Source Current (Body Diode) -- -- 220 A
I SM Maximum Pulsed Current (Body Diode) -- -- 880 A
V SD Diode Forward Voltage I S =95A,V GS =0V -- -- 1.5 V
trr Reverse Recovery Time I S =95A,T j = 25°C -- 75 -- ns
dI F /dt=100A/us,
Qrr Reverse Recovery Charge V GS =0V -- 80 -- nC
Pulse width tp≤300µs,δ≤2%

Symbol Parameter Typ. Units

R θJC Junction-to-Case 0.45 ℃ /W
R θJA Junction-to-Ambient 62 ℃ /W

a1
： Repetitive rating; pulse width limited by maximum junction temperature
a2
： L=0.27mH, I D =101A, Start T J =25 ℃
a3
： I SD =95A,di/dt ≤100A/us,V DD ≤BV DS, Start T J =25 ℃

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Characteristics Curve：

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Test Circuit and Waveform

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Package Information

Values(mm)
Items
MIN MAX
A 10.00 10.60
B 15.0 16.0
B1 8.90 9.50
C 4.30 4.80
C1 2.30 3.10
D 1.20 1.40
E 0.70 0.90
F 0.30 0.60
G 1.17 1.37
H 3.30 3.80
6.40 7.50
6.70 7.90
L 7.20 8.00
7.50 8.60
12.7 14.7
N 2.34 2.74
Q 2.40 3.00
3.50 3.90
TO-220AB Package
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The name and content of poisonous and harmful material in products

Part’s Name
Hazardous Substance
Pb Hg Cd Cr(VI) PBB PBDE
Limit ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1%

Lead Frame ○ ○ ○ ○ ○ ○
Molding Compound ○ ○ ○ ○ ○ ○
Chip ○ ○ ○ ○ ○ ○
Wire Bonding ○ ○ ○ ○ ○ ○
Solder × ○ ○ ○ ○ ○
○：means the hazardous material is under the criterion of SJ/T11363-2006.
×：means the hazardous material exceeds the criterion of SJ/T11363-2006.
Note
The plumbum element of solder exist in products presently, but within the
allowed range of Eurogroup’s RoHS.

Warnings
1. Exceeding the maximum ratings of the device in performance may cause damage to the
device, even the permanent failure, which may affect the dependability of the machine. It is
suggested to be used under 80 percent of the maximum ratings of the device.
2. When installing the heatsink, please pay attention to the torsional moment and the
smoothness of the heatsink.
3. VDMOSFETs is the device which is sensitive to the static electricity, it is necessary to
protect the device from being damaged by the static electricity when using it.
4. This publication is made by Huajing Microelectronics and subject to regular change without
notice.

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