N-Channel 60 V (D-S) MOSFET: Features Product Summary
N-Channel 60 V (D-S) MOSFET: Features Product Summary
N-Channel 60 V (D-S) MOSFET: Features Product Summary
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2N0605 TO220
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N-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
• 175 °C Junction Temperature
VDS (V) RDS(on) () ID (A)a • TrenchFET® Power MOSFET
0.005 at VGS = 10 V 120 • Material categorization:
60
0.008 at VGS = 7.5 V 100
TO-220AB D
S
N-Channel MOSFET
G D S
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Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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TYPICAL CHARACTERISTICS (25 °C unless noted)
100 100
VGS = 10 thru 7 V
80 80
6V
60 60
40 40
TC = 125 °C
20 20
25 °C
3V, 4V - 55 °C
0 0
0 2 4 6 8 10 0 1.5 3.0 4.5 6.0 7.5
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
120 0.015
TC = - 55 °C
100
0.012
g fs - Transconductance (S)
25 °C VGS = 4.5 V
80
0.009
125 °C
60
VGS = 10 V
0.006
R DS(on) -
40
0.003
20
0 0.000
0 10 20 30 40 50 0 20 40 60 80 100
I D - Drain Current (A) ID - Drain Current (A)
Transconductance On-Resistance vs. Drain Current
8000 10
7000
VDS = 30 V
VGS - Gate-to-Source Voltage (V)
8 ID = 50 A
6000
Ciss
C - Capacitance (pF)
5000 6
4000
4
3000
2000
Coss 2
1000
Crss
0 0
0 10 20 30 40 50 60 0 10 20 30 40 50
VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC)
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TYPICAL CHARACTERISTICS (25 °C unless noted)
2.5 100
VGS = 10 V
RDS(on) - On-Resistance (Normalized)
ID = 20 A
2.0
TJ = 150 °C
1.0
0.5
0.0 1
- 50 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5
TJ - Junction Temperature (°C) VSD - Source-to-Drain Voltage (V)
On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage
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THERMAL RATINGS
60 1000
Limited by
RDS(on)*
50
100 10 µs
100 µs
40
10
1 ms
30 10 ms
1 100 ms
DC
20
0.1 TC = 25 °C
10 Single Pulse
0 0.01
0 25 50 75 100 125 150 175 0.1 1 10 100
TA - Ambient Temperature (°C) VDS - Drain-to-Source Voltage (V)
* VGS > minimum V GS at which R DS(on) is specified
Maximum Drain Current vs. Ambient Temperature Safe Operating Area
1
Duty Cycle = 0.5
Normalized Effective Transient
0.2
Thermal Impedance
0.1
0.1
0.05
0.02
Single Pulse
0.01
10- 4 10- 3 10- 2 10- 1 1 10 100
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
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TO-220AB
MILLIMETERS INCHES
A
E DIM. MIN. MAX. MIN. MAX.
F
A 4.25 4.65 0.167 0.183
ØP b 0.69 1.01 0.027 0.040
b(1) 1.20 1.73 0.047 0.068
Q
H(1)
DWG: 5471
Notes
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
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