P-Channel 60 V (D-S) MOSFET: Features Product Summary
P-Channel 60 V (D-S) MOSFET: Features Product Summary
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P-Channel 60 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
• TrenchFET® power MOSFET
VDS (V) -60
• 100 % Rg and UIS tested
RDS(on) (Ω) at VGS = -10 V 0.050
RDS(on) (Ω) at VGS = -4.5 V 0.060
ID (A) per leg -8
S
SO-8
S 1 8 D
S 2 7 D G
S 3 6 D
G 4 5 D
Top View D
P-Channel MOSFET
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Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
30 30
VGS = 10 V thru 5 V
24 24
VGS = 4 V
ID - Drain Current (A)
TC = 25 °C
12 12
6 VGS = 3 V 6
TC = 125 °C
TC = - 55 °C
0 0
0 2 4 6 8 10 0 2 4 6 8 10
VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)
Output Characteristics Transfer Characteristics
10 25
TC = 25 °C TC = - 55 °C
8 20
gfs - Transconductance (S)
ID - Drain Current (A)
6 15
TC = 125 °C
TC = 25 °C
4 10
2 TC = 125 °C 5
TC = - 55 °C
0 0
0 1 2 3 4 5 0 2 4 6 8 10
VGS - Gate-to-Source Voltage (V) ID - Drain Current (A)
0.18 3000
0.13 2400
RDS(on) - On-Resistance (Ω)
C - Capacitance (pF)
0.10 1800
Ciss
VGS = 4.5 V
0.07 1200
0.01 0
0 6 12 18 24 30 0 12 24 36 48 60
ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current Capacitance
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TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
10 2.0
ID = 5 A
8 1.7
6 1.4
VGS = 4.5 V
4 1.1
2 0.8
0 0.5
0 9 18 27 36 45 - 50 - 25 0 25 50 75 100 125 150 175
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
100 0.5
10 0.4
RDS(on) - On-Resistance (Ω)
IS - Source Current (A)
TJ = 150 °C
1 0.3
0.1 TJ = 25 °C 0.2
TJ = 150 °C
0.01 0.1
TJ = 25 °C
0.001 0.0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
0.9 - 60
ID = 1 mA
0.7
VDS - Drain-to-Source Voltage (V)
ID = 250 μA
- 65
VGS(th) Variance (V)
0.5
0.3 - 70
ID = 5 mA
0.1
- 75
- 0.1
- 0.3 - 80
- 50 - 25 0 25 50 75 100 125 150 175 - 50 - 25 0 25 50 75 100 125 150 175
TJ - Temperature (°C) TJ - Junction Temperature (°C)
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THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
100
IDM Limited
10 100 μs
Limited by RDS(on)*
100 ms
0.1
1s
TC = 25 °C 10 s, DC
Single Pulse BVDSS Limited
0.01
0.01 0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
1
Normalized Effective Transient
0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
1. Duty Cycle, D =
0.02 t2
2. Per Unit Base = R thJA = 105 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (s)
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THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
1
Normalized Effective Transient
0.2
0.1
0.1
0.02 0.05
Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (s)
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8 7 6 5
E H
1 2 3 4
D h x 45
C
0.25 mm (Gage Plane)
A
All Leads
q 0.101 mm
e B A1 L
0.004"
MILLIMETERS INCHES
DIM Min Max Min Max
A 1.35 1.75 0.053 0.069
A1 0.10 0.20 0.004 0.008
B 0.35 0.51 0.014 0.020
C 0.19 0.25 0.0075 0.010
D 4.80 5.00 0.189 0.196
E 3.80 4.00 0.150 0.157
e 1.27 BSC 0.050 BSC
H 5.80 6.20 0.228 0.244
h 0.25 0.50 0.010 0.020
L 0.50 0.93 0.020 0.037
q 0° 8° 0° 8°
S 0.44 0.64 0.018 0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
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0.172
(4.369)
0.028
(0.711)
(6.248)
(3.861)
0.246
0.152
(1.194)
0.047
0.022 0.050
(0.559) (1.270)
Return to Index
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