NIKO-SEM N-Channel Enhancement Mode P1020HDB

Field Effect Transistor TO-252

Halogen-Free & Lead-Free

PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID
D
200V 325mΩ 10A

G
1: GATE
S 2: DRAIN
3: SOURCE

ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS 200 V
Gate-Source Voltage VGS ±20 V
TC = 25 ° C 10
Continuous Drain Current ID
TC = 100 ° C 6.3
1
A
Pulsed Drain Current IDM 26
Avalanche Current IAS 6.5
Avalanche Energy L = 1mH EAS 21.1 mJ
TC = 25 ° C 52
Power Dissipation PD W
TC = 100 ° C 20
Junction & Storage Temperature Range TJ, Tstg -55 to 150 °C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient RJA 62.5
°C/W
Junction-to-Case RJC 2.4
1
Pulse width limited by maximum junction temperature.

.ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 200
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1 2 3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA

REV 1.0 1 H-6-1

NIKO-SEM N-Channel Enhancement Mode P1020HDB
Field Effect Transistor TO-252
Halogen-Free & Lead-Free

VDS = 200V, VGS = 0V 1

Zero Gate Voltage Drain Current IDSS A
VDS = 160V, VGS = 0V, TJ = 125 ° C 10

Drain-Source On-State VGS =10V, ID = 5A 261 325

Resistance1 RDS(ON) mΩ
VGS =4.5V, ID = 5A 364 440
Forward Transconductance1 gfs VDS = 10V, ID = 5A 6 S
DYNAMIC
Input Capacitance Ciss 372
Output Capacitance Coss VGS = 0V, VDS = 25V, f = 1MHz 69 pF
Reverse Transfer Capacitance Crss 11
2
Total Gate Charge Qg 12.7
VDS = 160V , ID =10A ,
Gate-Source Charge2 Qgs 1.7 nC
VGS = 10V
2
Gate-Drain Charge Qgd 5.5
Turn-On Delay Time2 td(on) 10
2
Rise Time tr VDS = 100V , ID  10A, 30
nS
Turn-Off Delay Time 2
td(off) VGS = 10V, RGEN = 6Ω 24
Fall Time2 tf 35
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C)
Continuous Current3 IS 10 A
Forward Voltage1 VSD IF = 10A, VGS = 0V 1 V
Diode Reverse Recovery Time trr 103 nS
IF= 10A, dI/dt=100A/μs
Diode Reverse Recovery Charge Qrr 377 nC
1
Pulse test : Pulse Width  300 sec, Duty Cycle  2%.
2
Independent of operating temperature.
3
Pulse width limited by maximum junction temperature.

REV 1.0 2 H-6-1

NIKO-SEM N-Channel Enhancement Mode P1020HDB
Field Effect Transistor TO-252
Halogen-Free & Lead-Free

Output Characteristics Transfer Characteristics

12 12
VGS=10V
VGS=9V
ID, Drain-To-Source Current(A)

ID, Drain-To-Source Current(A)

VGS=8V
VGS=7V
9 VGS=6V 9
VGS=5V

6 VGS=4.5V 6

25℃
VGS=4.2V
3 3
125℃
-20℃

0 0
0 1 2 3 4 5 6 0 1 2 3 4 5 6 7

VDS, Drain-To-Source Voltage(V) VGS, Gate-To-Source Voltage(V)

On-Resistance VS Gate-To-Source On-Resistance VS Drain Current

1 1

ID=5A
RDS(ON)ON-Resistance(OHM)
RDS(ON)ON-Resistance(OHM)

0.8 0.8

0.6 0.6

VGS=4.5V VGS=10V
0.4 0.4

0.2 0.2

0 0
2 4 6 8 10 0 3 6 9 12

VGS, Gate-To-Source Voltage(V) ID , Drain-To-Source Current(A)

On-Resistance VS Temperature Capacitance Characteristic

3.0 700
Normalized Drain to Source

600
2.5
C , Capacitance(pF)

500
ON-Resistance

2.0

400
CISS
1.5
300

1.0
200

0.5 VGS=10V
ID=5A 100
COSS
CRSS
0.0 0
-50 -25 0 25 50 75 100 125 150 0 5 10 15 20 25 30

TJ , Junction Temperature(˚C) VDS, Drain-To-Source Voltage(V)

REV 1.0 3 H-6-1

NIKO-SEM N-Channel Enhancement Mode P1020HDB
Field Effect Transistor TO-252
Halogen-Free & Lead-Free

Gate charge Characteristics Source-Drain Diode Forward Voltage

10 100

VDS=160V
VGS , Gate-To-Source Voltage(V)

ID=10A
8

IS , Source Current(A)
10
6

4
150℃
1
25℃

0 0.1
0 3 6 9 12 15 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Qg , Total Gate Charge(nC) VSD, Source-To-Drain Voltage(V)

Safe Operating Area Single Pulse Maximum Power Dissipation

100 500
Operation in This
Area is Limited by
RDS(ON) Single Pulse
400 RθJC = 2.4 ˚C/W
ID , Drain Current(A)

TC=25˚C

10
Power(W)

300

1ms
200
10ms
1

NOTE : 100ms 100

1.VGS= 10V
2.TC=25˚C
3.RθJC = 2.4˚C/W DC
4.Single Pulse
0
0.1
0.001 0.01 0.1 1 10 100
1 10 100 1000
VDS, Drain-To-Source Voltage(V) Single Pulse Time(s)

Transient Thermal Response Curve

10

Duty cycle=0.5
0.2
Transient Thermal Resistance

0.1
r(t) , Normalized Effective

0.05
0.02
0.01
1

Notes

0.1

1.Duty cycle, D= t1 / t2
single pulse 2.RthJC = 2.4 ℃/W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC

0.01
0.0001 0.001 0.01 0.1 1 10 100

T1 , Square Wave Pulse Duration[sec]

REV 1.0 4 H-6-1