P0903BSG Niko-Sem: N-Channel Logic Level Enhancement Mode Field Effect Transistor
P0903BSG Niko-Sem: N-Channel Logic Level Enhancement Mode Field Effect Transistor
P0903BSG Niko-Sem: N-Channel Logic Level Enhancement Mode Field Effect Transistor
D
PRODUCT SUMMARY
1. GATE
V(BR)DSS RDS(ON) ID 2. DRAIN
G
25 9.5mΩ 50A 3. SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Gate-Source Voltage VGS ±20 V
TC = 25 °C 50
Continuous Drain Current ID
TC = 100 °C 35
1
A
Pulsed Drain Current IDM 200
Avalanche Current IAR 40
Avalanche Energy L = 0.1mH EAS 250
2
mJ
Repetitive Avalanche Energy L = 0.05mH EAR 8.6
TC = 25 °C 50
Power Dissipation PD W
TC = 100 °C 30
Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150
1
°C
Lead Temperature ( /16” from case for 10 sec.) TL 275
Jun-29-2004
1
NIKO-SEM N-Channel Logic Level Enhancement P0903BSG
Mode Field Effect Transistor TO-263 (D2PAK)
Lead-Free
Jun-29-2004
2
NIKO-SEM N-Channel Logic Level Enhancement P0903BSG
Mode Field Effect Transistor TO-263 (D2PAK)
Lead-Free
TYPICAL CHARACTERISTICS
Jun-29-2004
3
NIKO-SEM N-Channel Logic Level Enhancement P0903BSG
Mode Field Effect Transistor TO-263 (D2PAK)
Lead-Free
Jun-29-2004
4
NIKO-SEM N-Channel Logic Level Enhancement P0903BSG
Mode Field Effect Transistor TO-263 (D2PAK)
Lead-Free
mm mm
Dimension Dimension
Min. Typ. Max. Min. Typ. Max.
D 2.8 K 1.5
G 8.5 9 9.5 N
A
E
B
C
H G
L
3
J
M
2
I
Jun-29-2004
5