NIKO-SEM P-Channel Logic Level Enhancement P2003EV

Mode Field Effect Transistor SOP-8

Halogen-Free & Lead-Free

D
PRODUCT SUMMARY
V(BR)DSS RDS(ON) ID
G
-30 20mΩ -9A 4 :GATE
5,6,7,8 :DRAIN
1,2,3 :SOURCE
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±20 V
TA = 25 °C -9
Continuous Drain Current ID
TA = 70 °C -7
1
A
Pulsed Drain Current IDM -45
Avalanche Current IAS -30
Avalanche Energy L = 0.1mH EAS 46 mJ
TA = 25 °C 2.5
Power Dissipation PD W
TA = 70 °C 1.6
Operating Junction & Storage Temperature Range Tj, Tstg -55 to 150 °C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Ambient RθJA 50 °C / W
1
Pulse width limited by maximum junction temperature.

ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)

LIMITS
PARAMETER SYMBOL TEST CONDITIONS UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -30
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1 -1.5 -3
Gate-Body Leakage IGSS VDS = 0V, VGS = ±20V ±100 nA
VDS = -24V, VGS = 0V -1
Zero Gate Voltage Drain Current IDSS µA
VDS = -20V, VGS = 0V, TJ = 125 °C -10
1
On-State Drain Current ID(ON) VDS = -5V, VGS = -10V -45 A

Drain-Source On-State VGS = -4.5V, ID = -7A 25 35

1 RDS(ON) mΩ
Resistance VGS = -10V, ID = -9A 15 20
1
Forward Transconductance gfs VDS = -10V, ID = -9A 23 S

REV 0.9 Oct-25-2010

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NIKO-SEM P-Channel Logic Level Enhancement P2003EV
Mode Field Effect Transistor SOP-8
Halogen-Free & Lead-Free

DYNAMIC
Input Capacitance Ciss 1350
Output Capacitance Coss VGS = 0V, VDS = -15V, f = 1MHz 261 pF
Reverse Transfer Capacitance Crss 207
Gate Resistance Rg VGS = 15mV, VDS = 0V, f = 1MHz 3.2 Ω
2
Total Gate Charge Qg 30
2 VDS = 0.5V(BR)DSS, VGS = -10V,
Gate-Source Charge Qgs 4 nC
Gate-Drain Charge
2
Qgd ID = -9A 8
2
Turn-On Delay Time td(on) 22
2
Rise Time tr VDS = -15V, 14
2
nS
Turn-Off Delay Time td(off) ID ≅ -9A, VGS = -10V, RGS = 6Ω 50
2
Fall Time tf 24
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS -2.5 A
1
Forward Voltage VSD IF = -1A, VGS = 0V -1 V
Reverse Recovery Time trr 17 nS
IF = -9A, dlF/dt = 100A / µS
Reverse Recovery Charge Qrr 7 nC
1
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％.
2
Independent of operating temperature.

REV 0.9 Oct-25-2010

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NIKO-SEM P-Channel Logic Level Enhancement P2003EV
Mode Field Effect Transistor SOP-8
Halogen-Free & Lead-Free

Output Characteristics 0.040

On-Resistance VS Drain Current
50
VGS = -1 0 V
VGS = -9 V
-ID, Drain-To-Source Current(A)

VGS = -7 V 0.035

RDS(ON)ON-Resistance(OHM)
VGS = -5 V
VGS = -4 . 5 V
40
VGS = -3 . 5 V 0.030

VGS = -4.5V
0.025
30

0.020

VGS = -3 V VGS = -10V

20 0.015

0.010

10
VGS = -2 . 5 V 0.005

0
0
0 10 20 30 40 50
0 1 2 3 4 5

-VDS, Drain-To-Source Voltage(V) -ID , Drain-To-Source Current

On-Resistance VS Gate-To-Source On-Resistance VS Temperature

0.05 RDS(ON) ╳ 2.0
RDS(ON)ON-Resistance(OHM)

RDS(ON) ╳ 1.8
RDS(ON)ON-Resistance(OHM)

0.04
RDS(ON) ╳ 1.6

RDS(ON) ╳ 1.4
0.03
RDS(ON) ╳ 1.2

0.02 RDS(ON) ╳ 1.0

RDS(ON) ╳ 0.8
0.01
RDS(ON) ╳ 0.6 V GS= -10V
ID = -9A
ID = -9A
0 RDS(ON) ╳ 0.4
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150
-VGS, Gate-To-Source Voltage(V)
TJ , Junction Temperature(˚C)

Transfer Characteristics Gate charge Characteristics

1.60E+03
50
Characteristics
-VGS , Gate-To-Source Voltage(V)
-ID, Drain-To-Source Current(A)

Ciss
40
1.20E+03

30

8.00E+02

20

4.00E+02
10 25℃
Coss
125℃ -2 0 ℃ Crss

0 0.00E+00
0 1 2 3 4 5 0 5 10 15 20 25 30

-VGS, Gate-To-Source Voltage(V) Qg , Total Gate Charge(nC)

REV 0.9 Oct-25-2010

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NIKO-SEM P-Channel Logic Level Enhancement P2003EV
Mode Field Effect Transistor SOP-8
Halogen-Free & Lead-Free

10
Capacitance Characteristic Body Diode Forward Voltage VS Source current
1.00E+02

8
C , Capacitance(pF)

ID= -9A

-IS , Source Current(A)

1.00E+01
6 V DS= -15V

4
1.00E+00

0 1.00E-01
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
0 6 12 18 24 30
-VDS, Drain-To-Source Voltage(V) -VSD, Source-To-Drain Voltage(V)

Safe Operating Area Single Pulse Maximum Power Dissipation

100 2000
Ope ration in This Are a
is Lim ite d by RDS(ON)

10
↓ 1500
SINGLE PULSE
RθJA = 50 ˚ C/W
-ID , Drain Current(A)

1m s ˚C
T C =25˚
Power(W)

10m s

1 1000
100m s

1S

10S
0.1 500
NOTE :
DC
1.V GS= -10V
˚C
2.T C =25˚
3.RθJA = 50 ˚ C/W
4.Single Puls e
0.01 0
0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10

-VDS, Drain-To-Source Voltage(V) Single Pulse Time(s)

Transient Thermal Response Curve

1.00E+01
Transient Thermal Resistance
r(t) , Mormalized Effective

1.00E+00

D u ty cycle=0. 5

0. 2

1.00E-01 0. 1 Notes
0. 05

0. 02

0.01 1.Duty cycle, D= t1 / t2

1.00E-02
2.RthJA = 50 ℃/W
Si n g l e Pl u se
3.TJ-TA = P*RthJC
4.RthJA = r(t)*RthJA

1.00E-03
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

T1 , Square Wave Pulse Duration[sec]

REV 0.9 Oct-25-2010

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