 L6561

POWER FACTOR CORRECTOR

VERY PRECISE ADJUSTABLE OUTPUT

OVERVOLTAGE PROTECTION
MICROPOWERSTART-UPCURRENT (50µATYP.)
VERY LOW OPERATING SUPPLY CURRENT
(4mA TYP.)
INTERNAL START-UP TIMER Minidip SO8
CURRENT SENSE FILTER ON CHIP
DISABLE FUNCTION ORDERING NUMBERS:
L6561 (Minidip)
1% PRECISION (@ T j = 25°C) INTERNAL L6561D (SO8)
REFERENCE VOLTAGE
TRANSITION MODE OPERATION
TOTEM POLE OUTPUT CURRENT: ±400mA Realised in mixed BCD technology, the chip gives
DIP8/SO8 PACKAGES the following benefits:
- micro power start up current
- 1% precision internal reference voltage
DESCRIPTION (Tj = 25°C)
L6561 is the improved version of the L6560 - Soft Output Over Voltage Protection
standard Power Factor Corrector. Fully compat- - no need for external low pass filter onthe current
ible with the standard version, it has a superior sense
performant multiplier making the device capable - verylow operating quiescent current minimises
of working in wide input voltage range applica- power dissipation
tions (from 85V to 265V) with an excellent THD. The totem pole output stage is capable of driving
Furthermore the start up current has been re- a Power MOS or IGBT with source and sink cur-
duced at few tens of µA and a disable function rents of +/- 400mA. The device is operating in
has been implemented on the ZCD pin, guaran- transition mode and it is optimised for Electronic
teeing lower current consumption in stand by Lamp Ballast application, AC-DC adaptors and
mode. SMPS.

BLOCK DIAGRAM
COMP MULT CS
2 3 4
1
INV - 40K
2.5V MULTIPLIER
+

VOLTAGE OVER-VOLTAGE 5pF

+ -
REGULATOR DETECTION

VCC
8
VCC INTERNAL
SUPPLY 7V R Q
20V R1 S
7
+ GD
UVLO DRIVER
-
R2
VREF2
ZERO CURRENT
DETECTOR
2.3V -
1.8V STARTER
+

DISABLE
6 5
GND ZCD D97IN547B

April 1999 1/11

L6561

ABSOLUTE MAXIMUM RATINGS

Symbol Pin Parameter Value Unit
IVcc 8 ICC + IZ 30 mA
IGD 7 Output Totem Pole Peak Current (2µs) ±700 mA
INV, COMP 1, 2, 3 Analog Inputs & Outputs -0.3 to 7 V
MULT
CS 4 Current Sense Input -0.3 to 7 V
ZCD 5 Zero Current Detector 50 (source) mA
-10 (sink) mA
Ptot Power Dissipation @Tamb = 50 °C (Minidip) 1 W
(SO8) 0.65
Tj Junction Temperature Operating Range -25 to 150 °C
Tstg Storage Temperature -55 to 150 °C

PIN CONNECTION

THERMAL DATA
Symbol Parameter SO 8 MINIDIP Unit
Rth j-amb 150 100 °C/W
Thermal Resistance Junction-ambient

PIN FUNCTIONS
N. Name Function
1 INV Inverting input of the error amplifier. A resistive divider is connected between the output
regulated voltage and this point, to provide voltage feedback.
2 COMP Output of error amplifier. A feedback compensation network is placed between this pin and
the INV pin.
3 MULT Input of the multiplier stage. A resistive divider connects to this pin the rectified mains. A
voltage signal, proportional to the rectified mains, appears on this pin.
4 CS Input to the comparator of the control loop. The current is sensed by a resistor and the
resulting voltage is applied to this pin.
5 ZCD Zero current detection input. If it is connected to GND, the device is disabled.
6 GND Current return for driver and control circuits.
7 GD Gate driver output. A push pull output stage is able to drive the Power MOS with peak current
of 400mA (source and sink).
8 VCC Supply voltage of driver and control circuits.

2/11
 L6561

ELECTRICAL CHARACTERISTICS (VCC = 14.5V; T amb = -25°C to 125°C; unless otherwise specified)
SUPPLY VOLTAGE SECTION
Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
VCC 8 Operating Range after turn-on 11 18 V
VCC ON 8 Turn-on Threshold 11 12 13 V
VCC OFF 8 Turn-off Threshold 8.7 9.5 10.3 V
Hys 8 Hysteresis 2.2 2.5 2.8 V

SUPPLY CURRENT SECTION

Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
ISTART-U 8 Start-up Current before turn-on (VCC =11V) 20 50 90 µA
Iq 8 Quiescent Current 2.6 4 mA
ICC Operating Supply Current CL = 1nF @ 70KHz 4 5.5 mA
in OVP condition Vpin1 = 2.7V 1.4 2.1 mA
Iq Quiescent Current VPIN5 ≤ 150mV, VCC > VCC off 1.4 2.1 mA
VPIN5 ≤ 150mV, VCC < VCC off 20 50 90 µA
VZ 8 Zener Voltage ICC = 25mA 18 20 22 V

ERROR AMPLIFIER SECTION

Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
VINV 1 Voltage Feedback Input Tamb = 25°C 2.465 2.5 2.535 V
Threshold 12V < VCC < 18V 2.44 2.56
Line Regulation VCC = 12 to 18V 2 5 mV
IINV 1 Input Bias Current -0.1 -1 µA
GV Voltage Gain Open loop 60 80 dB
GB Gain Bandwidth 1 MHz
ICOMP 2 Source Current VCOMP = 4V, VINV = 2.4V -2 -4 -8 mA
Sink Current VCOMP = 4V, VINV = 2.6V 2.5 4.5 mA
VCOMP 2 Upper Clamp Voltage ISOURCE = 0.5mA 5.8 V
Lower Clamp Voltage ISink = 0.5mA 2.25 V

MULTIPLIER SECTION
Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
VMULT 3 Linear Operating Voltage 0 to 3 0 to 3.5 V
∆VCS Output Max. Slope VMULT = from 0V to 0.5V 1.65 1.9
VCOMP = Upper Clamp Voltage
∆Vmult
K Gain VMULT = 1V VCOMP = 4V 0.45 0.6 0.75 1/V

CURRENT SENSE COMPARATOR

Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
VCS 4 Current Sense Reference VMULT = 2.5V 1.6 1.7 1.8 V
Clamp VCOMP = Upper Clamp Voltage
ICS 4 Input Bias Current VOS = 0 -0.05 -1 µA
td (H-L) 4 Delay to Output 200 450 ns
4 Current Sense Offset 0 15 mV

3/11
L6561

ELECTRICAL CHARACTERISTICS (continued)

ZERO CURRENT DETECTOR
Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
VZCD 5 Input Threshold Voltage (1) 2.1 V
Rising Edge
Hysteresis (1) 0.3 0.5 0.7 V
VZCD 5 Upper Clamp Voltage IZCD = 20µA 4.5 5.1 5.9 V
VZCD 5 Upper Clamp Voltage IZCD = 3mA 4.7 5.2 6.1 V
VZCD 5 Lower Clamp Voltage IZCD = –3mA 0.3 0.65 1 V
IZCD 5 Sink Bias Current 1V ≤ VZCD ≤ 4.5V 2 µA
IZCD 5 Source Current Capability -3 -10 mA
IZCD 5 Sink Current Capability 3 10 mA
VDIS 5 Disable threshold 150 200 250 mV
IZCD 5 Restart Current After Disable VZCD < Vdis; VCC > VCCOFF -100 -200 -300 µA
OUTPUT SECTION
VGD 7 Dropout Voltage IGDsource = 200mA 1.2 2 V
IGDsource = 20mA 0.7 1 V
IGDsink = 200mA 1.5 V
IGDsink = 20mA 0.3 V
tr 7 Output Voltage Rise Time C L = 1nF 40 100 ns
tf 7 Output Voltage Fall Time C L = 1nF 40 100 ns
IGD off 7 IGD Sink Current VCC =3.5V VGD = 1V 5 10 - mA
OUTPUT OVERVOLTAGE SECTION
IOVP 2 OVP Triggering Current 35 40 45 µA
Static OVP Threshold 2.1 2.25 2.4 V
RESTART TIMER
tSTART Start Timer 70 150 400 µs
(1) Parameter guaranteed by design, not tested in production.

OVER VOLTAGE PROTECTION OVP Since the current through R2 does not change,
The output voltage is expected to be kept by the ∆IR1 must flow through the capacitor C comp and
operation of the PFC circuit close to its nominal enter the error amplifier.
value. This is set by the ratio of the two external This current is monitored inside the L6561 and when
resistors R1 and R2 (see fig. 2), taking into con- reaches about 37µA the output voltage of the multi-
sideration that the non inverting input of the error plier is forced to decrease, thus reducing the energy
amplifier is biased inside the L6561 at 2.5V. drawn from the mains. If the current exceeds 40µA,
In steady state conditions, the current through R1 the OVP protection is triggered (Dynamic OVP), and
and R2 is: the external power transistor is switched off until the
current falls approximately below 10µA.
Vout − 2.5 2.5V However, if the overvoltage persists, an internal
IR1sc = = IR2 = comparator (Static OVP) confirms the OVP condi-
R1 R2
tion keeping the external power switch turned off
and, if the external compensation network is (see fig. 1).
made only with a capacitor Ccomp, the current Finally, the overvoltage that triggers the OVP
through Ccomp equals zero. function is:
When the output voltage increases abruptly the ∆Vout = R1 ⋅ 40µA.
current through R1 becomes: Typical values for R1, R2 and C are shown in the
application circuits. The overvoltage can be set inde-
Voutsc + ∆VOUT − 2.5 pendently from the average output voltage. The pre-
IR1 = = IR1sc + ∆IR1
R1 cision in setting the overvoltage threshold is 7% of

4/11
 L6561

the overvoltage value (for instance ∆V = 60V ± for device disabling as well. By grounding the
4.2V). ZCD voltage the device is disabled reducing the
supply current consumption at 1.4mA typical (@
Disable function 14.5V supply voltage).
The zero current detector (ZCD) pin can be used Releasing the ZCD pin the internal start-up timer
will restart the device.
Figure 1.

OVER VOLTAGE

VOUT nominal

40µA
10µA
ISC

E/A OUTPUT
2.25V

DYNAMIC OVP

STATIC OVP D97IN592A

Figure 2. Overvoltage Protection Circuit

Ccomp.
+Vo
∆I
R1
1 2
-
E/A X PWM DRIVER
R2 +
2.5V
-
+
2.25V
∆I

40µA

D97IN591

5/11
L6561

Figure 3. Typical Application Circuit (80W, 110VAC)

D1 BYT03-400 +
T
C6 R7 (*) Vo=240V
R3 (*) D3 1N4150 R2 Po=80W
950K
240K 100
D2 10nF C3 680nF
BRIDGE 1N5248B R1 68K
+ 4 x 1N4007 C1 R9 (*)
FUSE 4A/250V 1µF 950K 5 2 1
8 R5 MOS
250V 7 C5
STP7NA40
- L6561 10 100µF
315V
Vac 3 4
6
(85V to 135V)
R10 C2 C7
NTC 10K 22µF 10nF R6 (*) R8
25V 0.31 10K
1W 1% -
D97IN549B
(*) R3 = 2 x 120KΩ TRANSFORMER
R6 = 0.619Ω/2 T: core THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT (OREGA 473201A7)
R7 = 2 x 475KΩ, 1% primary 90T of Litz wire 10 x 0.2mm
R9 = 2 x 475KΩ secondary 11T of #27 AWG (0.15mm)
gap 1.8mm for a total primary inductance of 0.7mH

Figure 4. Typical Application Circuit (120W, 220VAC)

D1 BYT13-600 +
T
C6 Vo=400V
R3 (*) D3 1N4150 R2 R7 (*) Po=120W
998K
440K 100
D2 10nF C3 1µF
BRIDGE 1N5248B R1 68K
+ 4 x 1N4007 C1
FUSE 2A/250V 560nF R9 (*) 5 2 1
1.82M 8 R5 MOS C5
400V 7 STP5NA50
- L6561 10 56µF
450V
Vac 3 4
6
(175V to 265V)
R10 C2 C7
NTC 10K 22µF 10nF R6 (*) R8
25V 0.41 6.34K
1W 1% -
D97IN550B
(*) R3 = 2 x 220KΩ TRANSFORMER
R6 = 0.82Ω/2 T: core THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT (OREGA 473201A8)
R7 = 2 x 499KΩ, 1% primary 90T of Litz wire 10 x 0.2mm
R9 = 2 x 909KΩ secondary 7T of #27 AWG (0.15mm)
gap 1.25mm for a total primary inductance of 0.8mH

Figure 5. Wide-Range Application (80W)

D1 BYT13-600 +
T
C6 Vo=400V
R3 (*) D3 1N4150 R2 R7 (*) Po=80W
998K
240K 100
D2 12nF C3 1µF
BRIDGE 1N5248B R1 68K
+ 4 x 1N4007 C1
FUSE 4A/250V 1µF R9 (*) 5 2 1
1.24M 8 R5 MOS
400V 7 C5
STP8NA50
- L6561 10 47µF
450V
Vac 3 4
6
(85V to 265V)
C2 C7
NTC R10 22µF 10nF R6 (*) R8
10K 25V 0.41 6.34K
1W 1% -
D97IN553B
(*) R3 = 2 x 120KΩ TRANSFORMER
R6 = 0.82Ω/2 T: core THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT (OREGA 473201A8)
R7 = 2 x 499KΩ, 1% primary 90T of Litz wire 10 x 0.2mm
R9 = 2 x 620KΩ secondary 7T of #27 AWG (0.15mm)
gap 1.25mm for a total primary inductance of 0.8mH

6/11
 L6561

Figure 6. P.C. Board and Components Layout of the Figg. 3, 4 and 5 (1:1.25 scale)

C
O
M
P
O
N
E
N
T
S

S
I
D
E

S
O
L
D
E
R
S
I
D
E

Figure 7. OVP Current Threshold vs. Figure 8. Undervoltage Lockout Threshold vs.
Temperature Temperature
D94IN047A
IOVP VCC-ON D94IN044A

(µA) (V)

13
41

12

40
11
VCC-OFF
(V)
39 10

9
38 -25 0 25 50 75 100 125
-50 -25 0 25 50 75 100 125 T (°C) T (°C)

7/11
L6561

Figure 9. Supply Current vs. Supply Voltage Figure 10. Voltage Feedback Input Threshold
vs. Temperature
D97IN548A VREF D94IN048A
ICC
(mA) (V)

10
5
2.50
1
0.5
0.1
2.48
0.05
C L = 1nF
0.01 f = 70KHz
0.005 TA = 25°C

0 2.46
0 5 10 15 20 VCC(V) -50 0 50 100 T (°C)

Figure 11. Output Saturation Voltage vs. Sink Figure 12. Output Saturation Voltage vs.
Current Source Current
VPIN7 D94IN046 VPIN7 D94IN053
(V) (V)
VCC = 14.5V SINK VCC = 14.5V
2.0 VCC -0.5

1.5 VCC -1.0

1.0 VCC -1.5

0.5 VCC -2.0

SOURCE

0 0
0 100 200 300 400 IGD (mA) 0 100 200 300 400 IGD (mA)

Figure 13. Multiplier Characteristics Family

VCS(pin4) D97IN555A VCOMP(pin2)

(V) upper voltage (V)
clamp
1.6 3.5
5.0
1.4
4.5

4.0
1.2
3.2
1.0

0.8
3.0
0.6

0.4
2.8
0.2
2.6
0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
VMULT(pin3) (V)

8/11
 L6561

mm inch
DIM. OUTLINE AND
MIN. TYP. MAX. MIN. TYP. MAX. MECHANICAL DATA
A 3.32 0.131

a1 0.51 0.020

B 1.15 1.65 0.045 0.065

b 0.356 0.55 0.014 0.022

b1 0.204 0.304 0.008 0.012

D 10.92 0.430

E 7.95 9.75 0.313 0.384

e 2.54 0.100

e3 7.62 0.300

e4 7.62 0.300

F 6.6 0.260

I 5.08 0.200

L 3.18 3.81 0.125 0.150

Minidip
Z 1.52 0.060

9/11
L6561

mm inch
DIM. OUTLINE AND
MIN. TYP. MAX. MIN. TYP. MAX.
MECHANICAL DATA
A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
a3 0.65 0.85 0.026 0.033
b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.020
c1 45° (typ.)
D (1) 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F (1) 3.8 4.0 0.15 0.157
L 0.4 1.27 0.016 0.050
M 0.6 0.024 SO8
S 8 ° (max.)

(1) D and F do not include mold flash or protrusions. Mold flash or

potrusions shall not exceed 0.15mm (.006inch).

10/11
 L6561

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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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 1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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