Location via proxy:   [ UP ]  
[Report a bug]   [Manage cookies]                

Datasheet Power Factor Corrector

Download as pdf or txt
Download as pdf or txt
You are on page 1of 11

L6560

 L6560A

POWER FACTOR CORRECTOR

VERY PRECISE ADJUSTABLE INTERNAL


OUTPUT OVERVOLTAGE PROTECTION MULTIPOWER BCD TECHNOLOGY
HYSTERETIC START-UP
(ISTART-UP < 0.5mA)
VERY LOW QUIESCENT CURRENT
(< 3.5mA)
INTERNAL START-UP TIMER
TRANSITION MODE OPERATING
TOTEM POLE OUTPUT CURRENT: ±400mA
DIP8/SO8 PACKAGES Minidip SO8

DESCRIPTION
The L6560/A is a monolithic integrated circuit in ORDERING NUMBERS:
Minidip and SO8 packages, designed as a con- L6560 L6560D
troller and driver of a discrete power MOS transis- L6560A L6560AD
tor for the implementation of active power factor
correction, for sinusoidal line current consump-
tion. - One quadrant multiplier.
Realized in mixed BCD technology, the chip inte- - Current sense comparator.
grates: - An output overvoltage protection circuit.
- An undervoltage lockout with micropower start- - A totem-pole output stage able to drive a
up and hysteresis. POWER MOS or IGBT devices with source
- An internal temperature compensated precise and sink current of 400mA. The chip works in
band gap reference. transition mode and is particularly intended
- A stable error amplifier. for lamp ballast applications and for low
power SMPS.

BLOCK DIAGRAM

June 2000 1/11


L6560 - L6560A

ABSOLUTE MAXIMUM RATINGS


Symbol Pin Parameter Value Unit
IVcc 8 ICC + IZ 30 mA
IGD 7 Output Totem Pole Peak Current (2µs) ±700 mA
INV, COMP 1, 2, 3 Analog Inputs & Outputs -0.3 to 7 V
MULT
CS 4 Current Sense Input -0.3 to 7 V
ZCD 5 Zero Current Detector 5 (source) mA
10 (sink) mA
Ptot Power Dissipation @Tamb = 50 °C (Minidip) 1 W
(SO8) 0.65
Tj Junction Temperature Operating Range -25 to 150 °C
Tstg Storage Temperature -55 to 150 °C

PIN CONNECTION

THERMAL DATA
Symbol Parameter SO 8 MINIDIP Unit
Rth j-amb Thermal Resistance Junction-ambient 150 100 °C/W

PIN FUNCTIONS
N. Name Function
1 INV Inverting input of the error amplifier. A resistive divider is connected between output regulated
voltage and this point, to provide the voltage feedback.
2 COMP Output of error amplifier. A feedback compensation network is placed between this pin and the
INV pin.
3 MULT Input of the multipler stage. A resistive divider connects to this pin the rectified mains. A
voltage signal, proportional to the rectified mains, appears on this pin.
4 CS Input to the comparator of the control loop. The current is sensed by a resistor and the
resulting voltage is applied to this pin.
5 ZCD Zero current detection input.
6 GND Ground of the control section.
7 GD Gate driver output. A push pull output stage is able to drive the Power MOS with peak current
of 400mA (source and sink).
8 VCC Supply voltage of driver and control circuits.

2/11
L6560 - L6560A

ELECTRICAL CHARACTERISTICS (VCC = 14.5V; Tj = 25°C unless otherwise specified)


SUPPLY VOLTAGE SECTION
Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
VCC 8 Operating Range after turn-on 11 18 V
VCC ON 8 Turn-on Threshold L6560 13.5 14.5 15.5 V
L6560A 11 12 13 v
VCC OFF 8 Turn-off Threshold L6560 9 10 11 V
L6560A 8.7 9.6 10.5 V
Hys 8 Hysteresis L6560 4.3 4.7 5.1 V
L6560A 2.5 2.8 3.1 V

SUPPLY CURRENT SECTION


Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
ISTART-U 8 Start-up Current before turn-on at: 0.3 0.5 mA
VCC = 13V (L6560)
VCC = 10.5V (L6560A)
ICC 8 Operating Supply Current CL = 0nF @ 70KHz 2.5 3.5 mA
CL = 1nF @ 70KHz 3.2 4 mA
in OVP condition Vpin1 = 2.7V 0.9 1.3 mA
VZ 8 Zener Voltage ICC = 25mA 18 20 22 V

ERROR AMPLIFIER SECTION


Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
VINV 1 Voltage Feedback Input 2.46 2.5 2.54 V
Threshold –25 ≤ TJ ≤ 85°C; 12V < VCC < 18V 2.43 2.56
TS Temperature Stability Tamb = -25 to 85°C 0.5 %
RL Line Regulation VCC = 11 to 18V 1 4 mV
IINV 1 Input Bias Current 0.1 1 µA
GV Voltage Gain Open loop 60 80 dB
ICOMP 2 Source Current (V1 < Vref) VCOMP = 5V 0.14 0.2 mA
Sink Current (V1 > Vref) 0.5 1 mA

MULTIPLIER SECTION
Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
VMULT 3 Operating Voltage 0 to 2.5 0 to 4.2 V
∆VCS Output Max. Slope VMULT = from 0V to 1V 0.9 1.25 1.6
VCOMP = 6V
∆Vmult
K Gain VMULT = 1V VCOMP = 5V 0.45 0.65 0.85 1/V

CURRENT SENSE COMPARATOR


Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
VCS 4 Voltage Threshold VMULT = 2.5V VCOMP = 6V 1.6 1.9 V
ICS 4 Input Bias Current 5 µA
td (H-L) 4 Delay to Output 200 400 ns

3/11
L6560 - L6560A

ELECTRICAL CHARACTERISTICS (continued)


ZERO CURRENT DETECTOR
Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
VZCD 5 Input Threshold Voltage Rising 1.8 2.3 V
Edge
Hysteresis 0.3 0.5 0.7 V
VZCD 5 Clamp Voltage IZCD = 3mA 5 5.7 6.4 V
VZCD 5 Clamp Voltage IZCD = –3mA 0.4 0.7 1 V

OUTPUT SECTION
Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
VGD 7 Dropout Voltage IGDsource = 200mA 1.2 2 V
IGDsource = 20mA 0.7 1 V
IGDsink = 200mA 1.5 V
IGDsink = 20mA 0.3 V
tr 7 Output Voltage Rise Time CL = 1nF 50 120 ns
tf 7 Output Voltage Fall Time CL = 1nF 40 100 ns

OUTPUT OVERVOLTAGE SECTION


Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
IOVP 2 OVP Triggering Current 36 40 44 µA

RESTART TIMER
Symbol Pin Parameter Test Condition Min. Typ. Max. Unit
tSTART Start Timer 45 60 µs

Voutsc + ∆VOUT − 2.5


OVER VOLTAGE PROTECTION OVP IR1 = = Isc + ∆I.
R1
The output voltage is expected to be kept by the
operation of the PFC circuits close to its reference Since the current through R2 doesn’t change, the
value that is set by the ratio of the two external re- ∆I current must flow through the capacitor C and
sistors R1 and R2 (see fig. 2), taking into consid- enter in the error amplifier.
eration that the non inverting input of the error
amplifier is biased inside the L6560 at 2.5V. This current is mirrored inside the L6560, and
compared with a precise internal reference of
In steady state conditions, the current through R1 40µA. Whenever such 40µA limit is exceed, the
and R2 is: OVP protection is triggered (Dynamic OVP), and
the external power transistor is switched off, until
∆Voutsc − 2.5 the overvoltage situation disappears. However if
ISC =
R1 the overvoltage persists, before that the transient
2.5 condition of dynamic circuit exhausts, an internal
or ISC = comparator (Static OVP) latches the OVP condi-
R2 tion keeping the external power switch turned off
(see fig. 1).
and, if the external compensation network is The OVP value is threfore set by the equation
made only with a capacitor C, the current through OVP = ∆Vout = R1 ⋅ 40µA.
C is equal zero. Typical values for R1, R2 and C are reported in
When the output voltage increases abruptly the the application circuit. The overvoltage can be set
current through R1 becomes: independently from the average output voltage.
The precision in setting the overvoltage threshold
Vout − 2.5 is 7% of the overvoltage value (for instance ∆V =
IR1 = 60V ± 4.2V).
R1

4/11
L6560 - L6560A

Figure 1.

OVER VOLTAGE

VOUT nominal

40µA

ISC

E/A OUTPUT
3.1V

DYNAMIC OVP

STATIC OVP D95IN219A

Figure 2: Overvoltage Protection Circuit

Ccomp.
+Vo
∆I
R1
1 2
-
E/A X PWM DRIVER
R2 +
2.5V
-
+
3.1V
∆I

40µA

D93IN035B

5/11
L6560 - L6560A

Figure 3: Typical Application Circuit (100W)

D1 BYT03-400 +
T
C6 R7 Vo=240V
R3 D3 1N4150 R2 Po=100W
1.5M
68K 5% 100 5% 1%
D2 10nF C3 330nF
BRIDGE 1N5248B R1 68K 5%
+ 4 x BY255 C1 R9
FUSE 4A/250V 1µF 1.5M 5 2 1
8
250V 1% R5 10 MOS C5
- L6560 7 IRF740 150µF
315V
Vac 3
6 4
(85V to 135V)
R4 330
R10 C2 C7
16K 22µF 10nF C4 R6 R8
1% 25V 1nF 0.33 16K
1W 1% -
D94IN050B
TRANSFORMER
T: core THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT
primary 90T of Litz wire 10 x 0.2mm
secondary 11T of #27 AWG (0.15mm)
gap 1.9mm for a total primary inductance of 0.6mH

Figure 4: Typical Application Circuit (120W)

D1 BYT13-600 +
T
C6 R7 Vo=400V
R3 D3 1N4150 R2 Po=120W
1M
220K 5% 100 5% 1%
D2 4.7nF C3 1µF
BRIDGE 1N5248B R1 68K 5%
+ 4 x BY255 C1 R9
FUSE 4A/250V 1µF 1.8M 5 2 1
8
400V 1% R5 10 MOS C5
- L6560 7 STP8NA50 47µF
450V
Vac 3
6 4
(175V to 265V)
R4 330
R10 C2 C7
6.2K 22µF 10nF C4 R6 R8
1% 25V 1nF 0.4 6.34K
1W 1% -
D94IN049A
TRANSFORMER
T: core THOMSON-CSF B1ET2910A (ETD 29 x 16 x 10mm) OR EQUIVALENT
primary 90T of Litz wire 10 x 0.2mm
secondary 7T of #27 AWG (0.15mm)
gap 1.25mm for a total primary inductance of 0.8mH

6/11
L6560 - L6560A

Figure 5: P.C. Board and Component Layout of the Figg. 3 and 4 (1:1.25 scale)

Figure 6: OVPCurrent Threshold vs. Temperature Figure 7: Undervoltage Lockout Threshold vs.
Temperature
D94IN047
VCC-TH-ON D94IN044
IOVP
(mA)
(V)

14
42

13

41
12
VCC-TH-OFF
(V)
40 10

9
39 -25 0 25 50 75 100 125
-50 -25 0 25 50 75 100 125 T (°C) T (°C)

7/11
L6560 - L6560A

Figure 8: Supply Current vs. Supply Voltage Figure 9: Voltage Feedback Input Threshold vs.
Temperature
ICC D94IN045 VREF D94IN048

(mA) (V)
CL = 1nF
f = 70KHz
4
TA = 25°C
2.50
3

2
2.48

0 2.46
-5 0 5 10 15 20 VCC(V) -50 0 50 100 T (°C)

Figure 10: Output Saturation Voltage vs. Sink Figure 11: Output Saturation Voltage vs. Source
Current Current
VPIN7 D94IN046 VPIN7 D94IN053
(V) (V)
VCC = 14.5V SINK VCC = 14.5V
2.0 VCC -0.5

1.5 VCC -1.0

1.0 VCC -1.5

0.5 VCC -2.0


SOURCE

0 0
0 100 200 300 400 IGD (mA) 0 100 200 300 400 IGD (mA)

Figure 12: Multiplier Characteristics Family Figure 13: Multiplier Characteristics Family

VCS(pin4) D94IN042 VCOMP(pin2) VCS (pin4) D94IN043 VCOMP


(V) (mV)
(V)
5.7 5.7
1.8 5.1 550
4.7
4.3
1.6 4.1
500
450
1.4 5.1
400
1.2 3.9
350 4.7
1.0 300
0.8 250 4.3
3.7 200 4.1
0.6
150
0.4 3.9
3.6 100
3.7
0.2 50 3.6
0.0 0
-1.0 0.0 1.0 2.0 3.0 4.0 5.0 -200 -100 0 100 200 300 400
VMULT(pin3) (V) VMULT (pin3) (mV)

8/11
L6560 - L6560A

mm inch
DIM. OUTLINE AND
MIN. TYP. MAX. MIN. TYP. MAX. MECHANICAL DATA
A 3.32 0.131

a1 0.51 0.020

B 1.15 1.65 0.045 0.065

b 0.356 0.55 0.014 0.022

b1 0.204 0.304 0.008 0.012

D 10.92 0.430

E 7.95 9.75 0.313 0.384

e 2.54 0.100

e3 7.62 0.300

e4 7.62 0.300

F 6.6 0.260

I 5.08 0.200

L 3.18 3.81 0.125 0.150


Minidip
Z 1.52 0.060

9/11
L6560 - L6560A

mm inch
DIM. OUTLINE AND
MIN. TYP. MAX. MIN. TYP. MAX.
MECHANICAL DATA
A 1.75 0.069
a1 0.1 0.25 0.004 0.010
a2 1.65 0.065
a3 0.65 0.85 0.026 0.033
b 0.35 0.48 0.014 0.019
b1 0.19 0.25 0.007 0.010
C 0.25 0.5 0.010 0.020
c1 45° (typ.)
D (1) 4.8 5.0 0.189 0.197
E 5.8 6.2 0.228 0.244
e 1.27 0.050
e3 3.81 0.150
F (1) 3.8 4.0 0.15 0.157
L 0.4 1.27 0.016 0.050
M 0.6 0.024 SO8
S 8 ° (max.)

(1) D and F do not include mold flash or protrusions. Mold flash or


potrusions shall not exceed 0.15mm (.006inch).

10/11
L6560 - L6560A

Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
 2000 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
http://www.st.com

11/11

You might also like